English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF650R17IE4
PrimePACK™2模块带有温度检测NTC
PrimePACK™2moduleandNTC
VCES = 1700V
IC nom = 650A / ICRM = 1300A
典型应用
• 三电平应用
• 辅助逆变器
• 大功率变流器
• 电机传动
• 风力发电机
TypicalApplications
• 3-Level-Applications
• AuxiliaryInverters
• HighPowerConverters
• MotorDrives
• WindTurbines
电气特性
• 提高工作结温Tvjop
• 高直流电压稳定性
• 高电流密度
• 低开关损耗
• Tvjop=150°C
• 低VCEsat
ElectricalFeatures
• ExtendedOperationTemperatureTvjop
• HighDCStability
• HighCurrentDensity
• LowSwitchingLosses
• Tvjop=150°C
• LowVCEsat
机械特性
• 封装的CTI>400
• 高爬电距离和电气间隙
• 高功率循环和温度循环能力
• 高功率密度
• 铜基板
• 标封装
MechanicalFeatures
• PackagewithCTI>400
• HighCreepageandClearanceDistances
• HighPowerandThermalCyclingCapability
• HighPowerDensity
• CopperBasePlate
• StandardHousing
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:TA
dateofpublication:2013-11-05
approvedby:PL
revision:3.3
1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF650R17IE4
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1700
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
650
930
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
1300
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
4,15
kW
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 650 A, VGE = 15 V
IC = 650 A, VGE = 15 V
IC = 650 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 24,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
A
A
typ.
max.
2,00
2,35
2,45
2,45
2,80
V
V
V
VGEth
5,2
5,8
6,4
V
VGE = -15 V ... +15 V
QG
7,00
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
2,3
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
54,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
1,70
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,55
0,60
0,60
µs
µs
µs
tr
0,09
0,11
0,12
µs
µs
µs
td off
1,00
1,25
1,30
µs
µs
µs
tf
0,29
0,49
0,57
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGon = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGon = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGoff = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 650 A, VCE = 900 V
VGE = ±15 V
RGoff = 2,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 650 A, VCE = 900 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 5000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,8 Ω
Tvj = 150°C
Eon
205
300
320
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 650 A, VCE = 900 V, LS = 45 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3200 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 2,7 Ω
Tvj = 150°C
Eoff
140
205
230
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
ISC
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
14,0
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:TA
dateofpublication:2013-11-05
approvedby:PL
revision:3.3
2
tP ≤ 10 µs, Tvj = 150°C
2700
A
36,0 K/kW
K/kW
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF650R17IE4
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
最大损耗功率
Maximumpowerdissipation
Tvj = 125°C
VRRM 1700
V
IF
650
A
IFRM
1300
A
I²t
70,5
kA²s
PRQM 650
kW
特征值/CharacteristicValues
min.
typ.
max.
1,85
1,95
1,95
2,25
2,35
正向电压
Forwardvoltage
IF = 650 A, VGE = 0 V
IF = 650 A, VGE = 0 V
IF = 650 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
695
760
805
A
A
A
恢复电荷
Recoveredcharge
IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
160
265
310
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 650 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C
VR = 900 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
76,0
135
160
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
27,0
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
V
V
V
71,5 K/kW
K/kW
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:TA
dateofpublication:2013-11-05
approvedby:PL
revision:3.3
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF650R17IE4
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL 4,0
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
33,0
33,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
19,0
19,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 400
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
端子联接扭距
Terminalconnectiontorque
min.
typ.
RthCH
4,50
LsCE
18
nH
RCC'+EE'
0,30
mΩ
Tstg
-40
150
°C
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
螺丝M4根据相应的应用手册进行安装
ScrewM4-Mountingaccordingtovalidapplicationnote
螺丝M8根据相应的应用手册进行安装
ScrewM8-Mountingaccordingtovalidapplicationnote
1,8
-
2,1
Nm
M
8,0
-
10
Nm
重量
Weight
G
825
g
preparedby:TA
dateofpublication:2013-11-05
approvedby:PL
revision:3.3
4
max.
K/kW
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF650R17IE4
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
1300
1300
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1200
1100
1100
900
900
800
800
700
700
IC [A]
1000
IC [A]
1000
600
600
500
500
400
400
300
300
200
200
100
100
0
0,0
0,5
1,0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
1200
1,5
2,0
VCE [V]
2,5
3,0
3,5
0
4,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=1.8Ω,RGoff=2.7Ω,VCE=900V
1300
550
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1200
1100
Eon, Tvj = 150°C
Eon, Tvj = 125°C
Eoff, Tvj = 150°C
Eoff, Tvj = 125°C
500
450
1000
400
900
350
700
E [mJ]
IC [A]
800
600
500
300
250
200
400
150
300
100
200
50
100
0
5
6
7
8
9
VGE [V]
10
11
0
12
preparedby:TA
dateofpublication:2013-11-05
approvedby:PL
revision:3.3
5
0
200
400
600
800
IC [A]
1000
1200
5,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF650R17IE4
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=650A,VCE=900V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
1000
100
Eon, Tvj = 150°C
Eon, Tvj = 125°C
Eoff, Tvj = 150°C
Eoff, Tvj = 125°C
900
800
ZthJC : IGBT
700
10
ZthJC [K/kW]
E [mJ]
600
500
400
1
300
200
i:
1
2
3
4
ri[K/kW]: 1,2
5,5
25,5 3,8
τi[s]:
0,0008 0,013 0,05 0,6
100
0
0
2
4
6
8
10
12
0,1
0,001
14
0,01
0,1
t [s]
RG [Ω]
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=2.7Ω,Tvj=150°C
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
1400
1300
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1200
1200
1100
1000
1000
900
800
IF [A]
IC [A]
800
600
700
600
500
400
400
300
200
200
100
0
0
200
400
600
0
800 1000 1200 1400 1600 1800
VCE [V]
preparedby:TA
dateofpublication:2013-11-05
approvedby:PL
revision:3.3
6
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF650R17IE4
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=1.8Ω,VCE=900V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=650A,VCE=900V
220
220
Erec, Tvj = 150°C
Erec, Tvj = 125°C
180
180
160
160
140
140
120
120
100
100
80
80
60
60
40
40
20
20
0
0
200
400
Erec, Tvj = 150°C
Erec, Tvj = 125°C
200
E [mJ]
E [mJ]
200
600
IF [A]
800
1000
0
1200
0
2
4
6
8
10
12
14
RG [Ω]
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
安全工作区二极管,逆变器(SOA)
safeoperationareaDiode,Inverter(SOA)
IR=f(VR)
Tvj=150°C
1000
ZthJC : Diode
1400
IR, Modul
1200
1000
IR [A]
ZthJC [K/kW]
100
800
600
10
400
i:
1
2
3
4
ri[K/kW]: 4,5
17
45
5
τi[s]:
0,0008 0,013 0,05 0,6
1
0,001
0,01
0,1
t [s]
1
200
0
10
preparedby:TA
dateofpublication:2013-11-05
approvedby:PL
revision:3.3
7
0
200
400
600
800 1000 1200 1400 1600 1800
VR [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF650R17IE4
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
60
80
100
TC [°C]
120
140
160
preparedby:TA
dateofpublication:2013-11-05
approvedby:PL
revision:3.3
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF650R17IE4
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
preparedby:TA
dateofpublication:2013-11-05
approvedby:PL
revision:3.3
9
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF650R17IE4
使用条件和条款
使用条件和条款
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havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
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exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
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preparedby:TA
dateofpublication:2013-11-05
approvedby:PL
revision:3.3
10
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