Data Sheet

BAV756S; BAW56 series
High-speed switching diodes
Rev. 6 — 18 March 2015
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Type number
Package
NXP
JEITA
JEDEC
Package
configuration
Configuration
BAV756S
SOT363
SC-88
-
very small
quadruple common
anode/common cathode
BAW56
SOT23
-
TO-236AB small
dual common anode
BAW56M
SOT883
SC-101
-
leadless ultra
small
dual common anode
BAW56S
SOT363
SC-88
-
very small
quadruple common
anode/common anode
BAW56T
SOT416
SC-75
-
ultra small
dual common anode
BAW56W
SOT323
SC-70
-
very small
dual common anode
1.2 Features and benefits
 High switching speed: trr  4 ns
 Low leakage current
 Small SMD plastic packages
 Low capacitance: Cd  2 pF
 Reverse voltage: VR  90 V
 AEC-Q101 qualified
1.3 Applications
 High-speed switching
 General-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
IR
reverse current
VR = 80 V
-
-
0.5
A
VR
reverse voltage
-
-
90
V
trr
reverse recovery time
-
-
4
ns
Per diode
[1]
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
2. Pinning information
Table 3.
Pin
Pinning
Description
Simplified outline
Symbol
BAV756S
1
anode (diode 1)
2
cathode (diode 2)
3
common anode (diode 2 and
diode 3)
4
cathode (diode 3)
5
anode (diode 4)
6
common cathode (diode 1
and diode 4)
6
5
4
1
2
3
6
5
1
2
4
3
006aab103
BAW56; BAW56T; BAW56W
1
cathode (diode 1)
2
cathode (diode 2)
3
common anode
3
3
1
2
006aaa144
1
2
006aab099
BAW56M
1
cathode (diode 1)
2
cathode (diode 2)
1
3
common anode
2
3
3
Transparent
top view
1
2
006aab099
BAW56S
1
cathode (diode 1)
2
cathode (diode 2)
3
common anode (diode 3 and
diode 4)
4
cathode (diode 3)
5
cathode (diode 4)
6
BAV756S_BAW56_SER
Product data sheet
common anode (diode 1 and
diode 2)
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
6
5
4
1
2
3
6
5
1
2
4
3
006aab102
© NXP Semiconductors N.V. 2015. All rights reserved.
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BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
3. Ordering information
Table 4.
Ordering information
Type number
BAV756S
Package
Name
Description
Version
SC-88
plastic surface-mounted package; 6 leads
SOT363
BAW56
-
plastic surface-mounted package; 3 leads
SOT23
BAW56M
SC-101
leadless ultra small plastic package; 3 solder lands;
body 1.0  0.6  0.5 mm
SOT883
BAW56S
SC-88
plastic surface-mounted package; 6 leads
SOT363
BAW56T
SC-75
plastic surface-mounted package; 3 leads
SOT416
BAW56W
SC-70
plastic surface-mounted package; 3 leads
SOT323
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
BAV756S
A7*
BAW56
A1*
BAW56M
S5
BAW56S
A1*
BAW56T
A1
BAW56W
A1*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
BAV756S_BAW56_SER
Product data sheet
VRRM
repetitive peak reverse
voltage
-
90
V
VR
reverse voltage
-
90
V
IF
forward current
BAV756S
Ts = 60 C
-
250
mA
BAW56
Tamb  25 C
-
215
mA
BAW56M
Tamb  25 C
-
150
mA
BAW56S
Ts = 60 C
-
250
mA
BAW56T
Ts = 90 C
-
150
mA
BAW56W
Tamb  25 C
-
150
mA
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
IFRM
repetitive peak forward
current
IFSM
non-repetitive peak forward
current
Min
Max
Unit
-
500
mA
tp = 1 s
-
4
A
tp = 1 ms
-
1
A
-
0.5
A
-
350
mW
-
250
mW
-
250
mW
-
350
mW
-
170
mW
square wave
[1]
tp = 1 s
[2]
total power dissipation
Ptot
BAV756S
Ts = 60 C
BAW56
Tamb  25 C
BAW56M
Tamb  25 C
[3]
BAW56S
Ts = 60 C
BAW56T
Ts = 90 C
BAW56W
Tamb  25 C
-
200
mW
BAV756S
Ts = 60 C
-
100
mA
BAW56
Tamb  25 C
-
125
mA
BAW56M
Tamb  25 C
-
75
mA
BAW56S
Ts = 60 C
-
100
mA
BAW56T
Ts = 90 C
-
75
mA
BAW56W
Tamb  25 C
-
130
mA
[4]
Per device
forward current
IF
Tj
junction temperature
-
150
C
Tamb
ambient temperature
65
+150
C
Tstg
storage temperature
65
+150
C
[1]
Tj = 25 C prior to surge.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3]
Reflow soldering is the only recommended soldering method.
[4]
Single diode loaded.
6. Thermal characteristics
Table 7.
Symbol
Thermal characteristics
Parameter
Conditions
thermal resistance from
junction to ambient
in free air
Min
Typ
Max
Unit
-
-
500
K/W
-
-
500
K/W
-
-
625
K/W
Per diode
Rth(j-a)
[1]
BAW56
BAW56M
BAW56W
BAV756S_BAW56_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
[2]
© NXP Semiconductors N.V. 2015. All rights reserved.
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NXP Semiconductors
High-speed switching diodes
Table 7.
Thermal characteristics …continued
Symbol
Parameter
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
BAV756S
Min
Typ
Max
Unit
-
-
255
K/W
BAW56
-
-
360
K/W
BAW56S
-
-
255
K/W
BAW56T
-
-
350
K/W
BAW56W
-
-
300
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 1 mA
-
-
715
mV
IF = 10 mA
-
-
855
mV
IF = 50 mA
-
-
1
V
IF = 150 mA
-
-
1.25
V
VR = 25 V
-
-
30
nA
VR = 80 V
-
-
0.5
A
VR = 25 V; Tj = 150 C
-
-
30
A
VR = 80 V; Tj = 150 C
-
-
150
A
VR = 0 V; f = 1 MHz
-
-
2
pF
reverse recovery time
[2]
-
-
4
ns
forward recovery voltage
[3]
-
-
1.75
V
Per diode
VF
IR
Cd
trr
VFR
[1]
BAV756S_BAW56_SER
Product data sheet
[1]
forward voltage
reverse current
diode capacitance
Pulse test: tp  300 s;   0.02.
[2]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
[3]
When switched from IF = 10 mA; tr = 20 ns.
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Rev. 6 — 18 March 2015
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NXP Semiconductors
High-speed switching diodes
006aab109
103
IF
(mA)
mbg704
102
IFSM
(A)
102
10
10
1
(1)
(2)
(3)
(4)
1
10−1
10−1
0.2
0.6
1.0
102
10
1
1.4
103
104
tp (μs)
VF (V)
(1) Tamb = 150 C
Based on square wave currents.
(2) Tamb = 85 C
Tj = 25 C; prior to surge
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 1.
Forward current as a function of forward
voltage; typical values
006aab110
102
IR
(μA)
10
(1)
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbh191
2.5
Cd
(pF)
2.0
(2)
1
1.5
10−1
(3)
10−2
1.0
10−3
0.5
10−4
(4)
10−5
0
0
20
40
60
80
0
100
5
10
VR (V)
(1) Tamb = 150 C
15
20
VR (V)
25
f = 1 MHz; Tamb = 25 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 3.
Reverse current as a function of reverse
voltage; typical values
BAV756S_BAW56_SER
Product data sheet
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
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Rev. 6 — 18 March 2015
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High-speed switching diodes
8. Test information
tr
tp
t
D.U.T.
10 %
+ IF
IF
RS = 50 Ω
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
V = VR + IF × RS
(1)
90 %
VR
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle  = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5.
Reverse recovery time test circuit and waveforms
I
1 kΩ
RS = 50 Ω
D.U.T.
450 Ω
I
V
90 %
OSCILLOSCOPE
VFR
Ri = 50 Ω
10 %
t
tr
t
tp
input signal
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp  100 ns; duty cycle   0.005
Fig 6.
Forward recovery voltage test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAV756S_BAW56_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
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BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
9. Package outline
3.0
2.8
0.62
0.55
0.55
0.47
1.1
0.9
3
3
0.30
0.22
0.45
0.15
0.50
0.46
2.5 1.4
2.1 1.2
1
0.30
0.22
2
0.48
0.38
1.9
0.15
0.09
Package outline BAW56 (SOT23/TO-236AB)
2.2
1.8
2.2 1.35
2.0 1.15
Package outline BAW56M (SOT883/SC-101)
0.95
0.60
1.8
1.4
3
0.45
0.15
1.75 0.9
1.45 0.7
2
1.3
03-04-03
0.45
0.15
4
1
3
2
0.30
0.15
0.25
0.10
0.3
0.2
Dimensions in mm
Fig 9.
Fig 8.
pin 1
index
0.65
Dimensions in mm
1.1
0.8
5
1
1
0.20
0.12
04-11-04
6
2
0.35
Dimensions in mm
Fig 7.
1.02
0.95
0.65
0.25
0.10
1
14-10-03
Dimensions in mm
Package outline BAV756S and
BAW56S (SOT363/SC-88)
04-11-04
Fig 10. Package outline BAW56T (SOT416/SC-75)
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
0.4
0.3
0.25
0.10
1.3
Dimensions in mm
04-11-04
Fig 11. Package outline BAW56W (SOT323/SC-70)
BAV756S_BAW56_SER
Product data sheet
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Rev. 6 — 18 March 2015
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NXP Semiconductors
High-speed switching diodes
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
BAV756S
Package
SOT363
Description
Packing quantity
3 000
10 000
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
-215
-235
BAW56
SOT23
4 mm pitch, 8 mm tape and reel
BAW56M
SOT883
2 mm pitch, 8 mm tape and reel
BAW56S
SOT363
-
-315
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
BAW56T
SOT416
4 mm pitch, 8 mm tape and reel
-115
-135
BAW56W
SOT323
4 mm pitch, 8 mm tape and reel
-115
-135
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
0.6
(3×)
0.7
(3×)
occupied area
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 12. Reflow soldering footprint BAW56 (SOT23/TO-236AB)
BAV756S_BAW56_SER
Product data sheet
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Rev. 6 — 18 March 2015
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BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 13. Wave soldering footprint BAW56 (SOT23/TO-236AB)
1.3
0.7
R0.05 (12×)
solder lands
solder resist
0.9
0.6
0.7
solder paste
0.25
(2×)
occupied area
0.3
(2×)
0.3
0.4
(2×)
0.4
Dimensions in mm
sot883_fr
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint BAW56M (SOT883/SC-101)
BAV756S_BAW56_SER
Product data sheet
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Rev. 6 — 18 March 2015
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NXP Semiconductors
High-speed switching diodes
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig 15. Reflow soldering footprint BAV756S and BAW56S (SOT363/SC-88)
1.5
solder lands
0.3 2.5
4.5
solder resist
occupied area
1.5
Dimensions in mm
1.3
1.3
preferred transport
direction during soldering
2.45
5.3
sot363_fw
Fig 16. Wave soldering footprint BAV756S and BAW56S (SOT363/SC-88)
BAV756S_BAW56_SER
Product data sheet
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Rev. 6 — 18 March 2015
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High-speed switching diodes
2.2
0.6
1.1
0.7
2
2.0
3
0.85
1.5
0.5
(3x)
1
0.6
(3x)
msa438
1.9
solder lands
solder resist
Dimensions in mm
solder paste
occupied area
Fig 17. Reflow soldering footprint BAW56T (SOT416/SC-75)
2.65
0.75
1.325
1.30
solder lands
2
solder paste
0.60
2.35 0.85
(3×)
0.50
(3×) 1.90
3
solder resist
occupied area
1
Dimensions in mm
0.55
(3×)
2.40
msa429
Fig 18. Reflow soldering footprint BAW56W (SOT323/SC-70)
4.60
4.00
1.15
2
3.65
2.10
3
2.70
solder lands
1
0.90
(2×)
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
msa419
Fig 19. Wave soldering footprint BAW56W (SOT323/SC-70)
BAV756S_BAW56_SER
Product data sheet
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Rev. 6 — 18 March 2015
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12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAV756S_BAW56_SER
v.6
20150318
Product data sheet
-
BAV756S_BAW56_SER_
5
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
BAV756S_BAW56_SER_5 20071126
Product data sheet
-
BAV756S_2
BAW56_4
BAW56S_2
BAW56T_2
BAW56W_4
BAV756S_2
19971021
Product specification
-
BAV756S_1
BAW56_4
20030325
Product specification
-
BAW56_3
BAW56S_2
19971021
Product specification
-
BAW56S_1
BAW56T_2
19971219
Product specification
-
-
BAW56W_4
19990511
Product specification
-
BAW56W_3
BAV756S_BAW56_SER
Product data sheet
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BAV756S; BAW56 series
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High-speed switching diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BAV756S_BAW56_SER
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
14 of 16
BAV756S; BAW56 series
NXP Semiconductors
High-speed switching diodes
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BAV756S_BAW56_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
15 of 16
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Quality information . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 18 March 2015
Document identifier: BAV756S_BAW56_SER
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