BAV756S; BAW56 series High-speed switching diodes Rev. 6 — 18 March 2015 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC Package configuration Configuration BAV756S SOT363 SC-88 - very small quadruple common anode/common cathode BAW56 SOT23 - TO-236AB small dual common anode BAW56M SOT883 SC-101 - leadless ultra small dual common anode BAW56S SOT363 SC-88 - very small quadruple common anode/common anode BAW56T SOT416 SC-75 - ultra small dual common anode BAW56W SOT323 SC-70 - very small dual common anode 1.2 Features and benefits High switching speed: trr 4 ns Low leakage current Small SMD plastic packages Low capacitance: Cd 2 pF Reverse voltage: VR 90 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit IR reverse current VR = 80 V - - 0.5 A VR reverse voltage - - 90 V trr reverse recovery time - - 4 ns Per diode [1] [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2. Pinning information Table 3. Pin Pinning Description Simplified outline Symbol BAV756S 1 anode (diode 1) 2 cathode (diode 2) 3 common anode (diode 2 and diode 3) 4 cathode (diode 3) 5 anode (diode 4) 6 common cathode (diode 1 and diode 4) 6 5 4 1 2 3 6 5 1 2 4 3 006aab103 BAW56; BAW56T; BAW56W 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode 3 3 1 2 006aaa144 1 2 006aab099 BAW56M 1 cathode (diode 1) 2 cathode (diode 2) 1 3 common anode 2 3 3 Transparent top view 1 2 006aab099 BAW56S 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode (diode 3 and diode 4) 4 cathode (diode 3) 5 cathode (diode 4) 6 BAV756S_BAW56_SER Product data sheet common anode (diode 1 and diode 2) All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 6 5 4 1 2 3 6 5 1 2 4 3 006aab102 © NXP Semiconductors N.V. 2015. All rights reserved. 2 of 16 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 3. Ordering information Table 4. Ordering information Type number BAV756S Package Name Description Version SC-88 plastic surface-mounted package; 6 leads SOT363 BAW56 - plastic surface-mounted package; 3 leads SOT23 BAW56M SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm SOT883 BAW56S SC-88 plastic surface-mounted package; 6 leads SOT363 BAW56T SC-75 plastic surface-mounted package; 3 leads SOT416 BAW56W SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 5. Marking codes Type number Marking code[1] BAV756S A7* BAW56 A1* BAW56M S5 BAW56S A1* BAW56T A1 BAW56W A1* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode BAV756S_BAW56_SER Product data sheet VRRM repetitive peak reverse voltage - 90 V VR reverse voltage - 90 V IF forward current BAV756S Ts = 60 C - 250 mA BAW56 Tamb 25 C - 215 mA BAW56M Tamb 25 C - 150 mA BAW56S Ts = 60 C - 250 mA BAW56T Ts = 90 C - 150 mA BAW56W Tamb 25 C - 150 mA All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 3 of 16 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions IFRM repetitive peak forward current IFSM non-repetitive peak forward current Min Max Unit - 500 mA tp = 1 s - 4 A tp = 1 ms - 1 A - 0.5 A - 350 mW - 250 mW - 250 mW - 350 mW - 170 mW square wave [1] tp = 1 s [2] total power dissipation Ptot BAV756S Ts = 60 C BAW56 Tamb 25 C BAW56M Tamb 25 C [3] BAW56S Ts = 60 C BAW56T Ts = 90 C BAW56W Tamb 25 C - 200 mW BAV756S Ts = 60 C - 100 mA BAW56 Tamb 25 C - 125 mA BAW56M Tamb 25 C - 75 mA BAW56S Ts = 60 C - 100 mA BAW56T Ts = 90 C - 75 mA BAW56W Tamb 25 C - 130 mA [4] Per device forward current IF Tj junction temperature - 150 C Tamb ambient temperature 65 +150 C Tstg storage temperature 65 +150 C [1] Tj = 25 C prior to surge. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Reflow soldering is the only recommended soldering method. [4] Single diode loaded. 6. Thermal characteristics Table 7. Symbol Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit - - 500 K/W - - 500 K/W - - 625 K/W Per diode Rth(j-a) [1] BAW56 BAW56M BAW56W BAV756S_BAW56_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 [2] © NXP Semiconductors N.V. 2015. All rights reserved. 4 of 16 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes Table 7. Thermal characteristics …continued Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions BAV756S Min Typ Max Unit - - 255 K/W BAW56 - - 360 K/W BAW56S - - 255 K/W BAW56T - - 350 K/W BAW56W - - 300 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA - - 1 V IF = 150 mA - - 1.25 V VR = 25 V - - 30 nA VR = 80 V - - 0.5 A VR = 25 V; Tj = 150 C - - 30 A VR = 80 V; Tj = 150 C - - 150 A VR = 0 V; f = 1 MHz - - 2 pF reverse recovery time [2] - - 4 ns forward recovery voltage [3] - - 1.75 V Per diode VF IR Cd trr VFR [1] BAV756S_BAW56_SER Product data sheet [1] forward voltage reverse current diode capacitance Pulse test: tp 300 s; 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. [3] When switched from IF = 10 mA; tr = 20 ns. All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 5 of 16 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 006aab109 103 IF (mA) mbg704 102 IFSM (A) 102 10 10 1 (1) (2) (3) (4) 1 10−1 10−1 0.2 0.6 1.0 102 10 1 1.4 103 104 tp (μs) VF (V) (1) Tamb = 150 C Based on square wave currents. (2) Tamb = 85 C Tj = 25 C; prior to surge (3) Tamb = 25 C (4) Tamb = 40 C Fig 1. Forward current as a function of forward voltage; typical values 006aab110 102 IR (μA) 10 (1) Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values mbh191 2.5 Cd (pF) 2.0 (2) 1 1.5 10−1 (3) 10−2 1.0 10−3 0.5 10−4 (4) 10−5 0 0 20 40 60 80 0 100 5 10 VR (V) (1) Tamb = 150 C 15 20 VR (V) 25 f = 1 MHz; Tamb = 25 C (2) Tamb = 85 C (3) Tamb = 25 C (4) Tamb = 40 C Fig 3. Reverse current as a function of reverse voltage; typical values BAV756S_BAW56_SER Product data sheet Fig 4. Diode capacitance as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 6 of 16 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms I 1 kΩ RS = 50 Ω D.U.T. 450 Ω I V 90 % OSCILLOSCOPE VFR Ri = 50 Ω 10 % t tr t tp input signal output signal mga882 Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty cycle 0.005 Fig 6. Forward recovery voltage test circuit and waveforms 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAV756S_BAW56_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 7 of 16 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 9. Package outline 3.0 2.8 0.62 0.55 0.55 0.47 1.1 0.9 3 3 0.30 0.22 0.45 0.15 0.50 0.46 2.5 1.4 2.1 1.2 1 0.30 0.22 2 0.48 0.38 1.9 0.15 0.09 Package outline BAW56 (SOT23/TO-236AB) 2.2 1.8 2.2 1.35 2.0 1.15 Package outline BAW56M (SOT883/SC-101) 0.95 0.60 1.8 1.4 3 0.45 0.15 1.75 0.9 1.45 0.7 2 1.3 03-04-03 0.45 0.15 4 1 3 2 0.30 0.15 0.25 0.10 0.3 0.2 Dimensions in mm Fig 9. Fig 8. pin 1 index 0.65 Dimensions in mm 1.1 0.8 5 1 1 0.20 0.12 04-11-04 6 2 0.35 Dimensions in mm Fig 7. 1.02 0.95 0.65 0.25 0.10 1 14-10-03 Dimensions in mm Package outline BAV756S and BAW56S (SOT363/SC-88) 04-11-04 Fig 10. Package outline BAW56T (SOT416/SC-75) 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 0.25 0.10 1.3 Dimensions in mm 04-11-04 Fig 11. Package outline BAW56W (SOT323/SC-70) BAV756S_BAW56_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 8 of 16 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAV756S Package SOT363 Description Packing quantity 3 000 10 000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 -215 -235 BAW56 SOT23 4 mm pitch, 8 mm tape and reel BAW56M SOT883 2 mm pitch, 8 mm tape and reel BAW56S SOT363 - -315 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 BAW56T SOT416 4 mm pitch, 8 mm tape and reel -115 -135 BAW56W SOT323 4 mm pitch, 8 mm tape and reel -115 -135 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 12. Reflow soldering footprint BAW56 (SOT23/TO-236AB) BAV756S_BAW56_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 9 of 16 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 13. Wave soldering footprint BAW56 (SOT23/TO-236AB) 1.3 0.7 R0.05 (12×) solder lands solder resist 0.9 0.6 0.7 solder paste 0.25 (2×) occupied area 0.3 (2×) 0.3 0.4 (2×) 0.4 Dimensions in mm sot883_fr Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint BAW56M (SOT883/SC-101) BAV756S_BAW56_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 10 of 16 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 15. Reflow soldering footprint BAV756S and BAW56S (SOT363/SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 1.3 preferred transport direction during soldering 2.45 5.3 sot363_fw Fig 16. Wave soldering footprint BAV756S and BAW56S (SOT363/SC-88) BAV756S_BAW56_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 11 of 16 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2.2 0.6 1.1 0.7 2 2.0 3 0.85 1.5 0.5 (3x) 1 0.6 (3x) msa438 1.9 solder lands solder resist Dimensions in mm solder paste occupied area Fig 17. Reflow soldering footprint BAW56T (SOT416/SC-75) 2.65 0.75 1.325 1.30 solder lands 2 solder paste 0.60 2.35 0.85 (3×) 0.50 (3×) 1.90 3 solder resist occupied area 1 Dimensions in mm 0.55 (3×) 2.40 msa429 Fig 18. Reflow soldering footprint BAW56W (SOT323/SC-70) 4.60 4.00 1.15 2 3.65 2.10 3 2.70 solder lands 1 0.90 (2×) solder resist occupied area Dimensions in mm preferred transport direction during soldering msa419 Fig 19. Wave soldering footprint BAW56W (SOT323/SC-70) BAV756S_BAW56_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 12 of 16 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BAV756S_BAW56_SER v.6 20150318 Product data sheet - BAV756S_BAW56_SER_ 5 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. BAV756S_BAW56_SER_5 20071126 Product data sheet - BAV756S_2 BAW56_4 BAW56S_2 BAW56T_2 BAW56W_4 BAV756S_2 19971021 Product specification - BAV756S_1 BAW56_4 20030325 Product specification - BAW56_3 BAW56S_2 19971021 Product specification - BAW56S_1 BAW56T_2 19971219 Product specification - - BAW56W_4 19990511 Product specification - BAW56W_3 BAV756S_BAW56_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 13 of 16 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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This document supersedes and replaces all information supplied prior to the publication hereof. BAV756S_BAW56_SER Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 14 of 16 BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BAV756S_BAW56_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 18 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 15 of 16 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Quality information . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2015. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 18 March 2015 Document identifier: BAV756S_BAW56_SER