PANASONIC 2SA2140

Power Transistors
2SA2140
Silicon PNP epitaxial planar type
Unit: mm
For power amplification
For TV VM circuit
4.6±0.2
9.9±0.3
3.0±0.5
2.9±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−180
V
Collector-emitter voltage (Base open)
VCEO
−180
V
Emitter-base voltage (Collector open)
VEBO
−6
V
Collector current
IC
−1.5
A
Peak collector current
ICP
−3
A
20
W
Collector power dissipation
PC
Ta = 25°C
15.0±0.5
• Satisfactory linearity of forward current transfer ratio hFE
• High transition frequency (fT)
• Full-pack package which can be installed to the heat sink with one
screw.
13.7±0.2
4.2±0.2
Solder Dip
■ Features
φ 3.2±0.1
1.4±0.2
1.6±0.2
2.6±0.1
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
1
2
3
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Collector-emitter voltage (Base open)
VCEO
IC = −10 mA, IB = 0
Collector-base cutoff current (Emitter open)
ICBO
VCB = −180 V, IE = 0
−100
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −6 V, IC = 0
−100
µA
hFE
VCE = −5 V, IC = − 0.1 A
240

− 0.5
V
Forward current transfer ratio
*
Collector-emitter saturation voltage
VCE(sat)
Conditions
Min
Typ
Max
−180
Unit
V
60
IC = −1 A, IB = − 0.1 A
VCE = −10 V, IC = − 0.2 A, f = 10 MHz
100
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = −10 V, IE = 0, f = 1 MHz
30
pF
Turn-on time
ton
IC = − 0.4 A, Resistance loaded
0.1
µs
Storage time
tstg
IB1 = 0.04 A, IB2 = − 0.04 A
1.0
µs
Fall time
tf
VCC = 100 V
0.1
µs
Transition frequency
fT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE
60 to 140
120 to 240
Publication date: July 2004
SJD00316AED
1
2SA2140
PC  Ta
Safe operation area
10
(1) TC = Ta
(2) Without heat sink
Non repetitive pulse, TC = 25°C
ICP
30
IC
Collector current IC (A)
Collector power dissipation PC (W)
35
25
(1)
20
15
10
1
0.1
5
t = 1 ms
t = 10 ms
t=1s
(2)
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
2
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
SJD00316AED
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and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
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modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
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2003 SEP