Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 4.0±0.2 ■ Features marking (Ta=25˚C) 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2 3 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 ● Optimum for high-density mounting. Allowing supply with the radial taping. High foward current transfer ratio hFE. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 ■ Electrical Characteristics Parameter 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Symbol Collector cutoff current 2.54±0.15 Conditions min typ max Unit ICBO VCB = 10V, IE = 0 0.1 µA ICEO VCE = 20V, IB = 0 1 µA Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 40 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 Forward current transfer ratio hFE* VCE = 10V, IC = 2mA 400 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.05 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 200 MHz Noise voltage NV 80 mV *h FE VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT V 2000 0.2 V Rank classification Rank R hFE 400 ~ 800 S T 600 ~ 1200 1000 ~ 2000 1 Transistor 2SD1424 PC — Ta IC — VCE 120 300 200 100 IB=100µA 80 60 90µA 80µA 70µA 60µA 50µA 40 40µA 30µA 20 Ta=75˚C –25˚C 80 60 40 20 20µA 10µA 0 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 VCE(sat) — IC 1 Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.3 1 3 10 30 Ta=75˚C 900 25˚C –25˚C 600 300 Collector current IC (mA) 0.3 1 3 10 30 100 Collector current IC (mA) Cob — VCB 120 IE=0 f=1MHz Ta=25˚C 3 2 1 VCE=10V GV=80dB Function=FLAT 100 Noise voltage NV (mV) 4 80 Rg=100kΩ 60 22kΩ 40 5kΩ 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 300 250 200 150 100 0 0.01 0.03 0.1 0.3 Collector current IC (mA) 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) NV — IC 5 350 50 0 0.1 100 2.0 VCB=10V Ta=25˚C 1200 3 1.6 400 1500 10 1.2 VCE=10V Forward current transfer ratio hFE 30 0.8 fT — I E 1800 IC/IB=10 0.01 0.1 0.4 Base to emitter voltage VBE (V) hFE — IC 100 0.3 0 Collector to emitter voltage VCE (V) Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 100 Collector current IC (mA) 100 400 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 0 2 IC — VBE 120 Collector current IC (mA) Collector power dissipation PC (mW) 500 1 –100