AON6782 30V N-Channel MOSFET SRFET General Description Product Summary SRFETTM AON6782 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS TM 30V 85A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 2.4mΩ RDS(ON) (at VGS = 4.5V) < 2.9mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C C A 260 24 IDSM TA=70°C V 66 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C Pulsed Drain Current Maximum 30 ±12 A 19 Avalanche Current C IAS, IAR 57 A Avalanche energy L=0.1mH C EAS, EAR 162 mJ TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev1 : Oct 2010 2.5 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.6 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 83 PD -55 to 150 Typ 15 42 1.1 °C Max 20 50 1.5 Units °C/W °C/W °C/W Page 1 of 7 AON6782 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V VDS=30V, VGS=0V TJ=125°C 100 Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.2 VGS=10V, VDS=5V 260 100 nA 2 V 2 2.4 3 3.6 VGS=4.5V, ID=20A 2.3 2.9 VDS=5V, ID=20A 120 S 0.4 V TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime mA 1.5 VGS=10V, ID=20A Coss Units V 0.5 IGSS IS Max 30 VGS(th) ID(ON) RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A A mΩ mΩ 85 A 4500 5650 6780 pF 420 600 780 pF 230 390 550 pF 0.3 0.6 0.9 Ω 33 42 51 nC 8 11 14 nC 8 14 20 nC 11 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω ns 7 ns 62 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 10 13 16 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 19 24 29 11 ns ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1 : Oct 2010 www.aosmd.com Page 2 of 7 AON6782 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 3V 4.5V VDS=5V 80 10V 90 2.5V ID(A) ID (A) 60 60 125°C 40 30 20 25°C 0 0 0 1 2 3 4 1 5 1.5 5 Normalized On-Resistance RDS(ON) (mΩ) 2.5 3 2 4 3 VGS=4.5V 2 VGS=10V 1 0 1.8 VGS=4.5V ID=20A 1.6 17 5 2 10 1.4 VGS=10V ID=20A 1.2 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 8 1.0E+02 ID=20A 125° 1.0E+01 40 1.0E+00 4 IS (A) 6 RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 25° 1.0E-01 1.0E-02 1.0E-03 2 1.0E-04 25°C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev1 : Oct 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON6782 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 VDS=15V ID=20A Ciss 6000 Capacitance (pF) VGS (Volts) 8 6 4 2 5000 4000 3000 2000 Coss 1000 0 0 0 20 40 60 80 0 100 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs RDS(ON) limited 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 160 10.0 100µs DC 1.0 1ms 10ms TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 120 80 30 1 1 VDS (Volts) 10 100 0 0.0001 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 0.1 PD Single Pulse 0.01 0.00001 17 5 2 10 40 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=150°C TC=25°C 10µs Power (W) 100.0 ZθJC Normalized Transient Thermal Resistance 5 200 1000.0 ID (Amps) Crss 0.0001 Ton 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev1 : Oct 2010 www.aosmd.com Page 4 of 7 AON6782 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 100 TA=150°C 10 TA=125°C 80 60 40 20 1 0 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 100 10000 80 1000 50 75 100 125 150 TA=25°C 60 40 17 5 2 10 100 10 20 1 0.00001 0 0 25 50 75 100 125 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 10 0 18 150 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 25 TCASE (°C) Figure 13: Power De-rating (Note F) Power (W) Current rating ID(A) 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev1 : Oct 2010 www.aosmd.com Page 5 of 7 AON6782 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.7 20A 10A 5A 0.6 1.0E-02 0.5 IR (A) VSD (V) VDS=30V 1.0E-03 VDS=15V 0.4 0.3 IS=1A 0.2 1.0E-04 0.1 0 0 50 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 40 di/dt=800A/µs 6 20 trr (ns) Qrr Irm (A) Qrr (nC) 8 25ºC 25 125ºC 10 10 15 20 25 1.5 6 125ºC 0 20 15 125ºC 5 Irm 5 25ºC 200 400 600 800 trr trr (ns) 12 30 0 1000 3.5 25ºC 3 2.5 125ºC 2 9 S 6 1.5 25ºC 1 0.5 125º 0 0 di/dt (A/µs) Figure 20: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev1 : Oct 2010 25 4 3 0 0 20 Is=20A 15 Irm (A) Qrr (nC) 10 Qrr 10 15 21 25ºC 15 10 18 25 20 5 IS (A) Figure 19: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current Is=20A 125ºC 0.5 25ºC IS (A) Figure 18: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 30 1 S 0 30 35 2 8 0 2 5 25ºC 2 25ºC 0 trr 4 4 Irm 15 2.5 10 30 3 125ºC di/dt=800A/µs 12 10 125ºC 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 14 12 35 50 www.aosmd.com S 0 S 1.0E-05 200 400 600 800 0 1000 di/dt (A/µs) Figure 21: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AON6782 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev1 : Oct 2010 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 7 of 7