PANASONIC MA3S795D

Schottky Barrier Diodes (SBD)
MA3S795D, MA3S795E (MA795WA, MA795WK)
Silicon epitaxial planar type
Unit: mm
0.28±0.05
0.80±0.05
(0.44)
0.12+0.05
–0.02
Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage
VRM
30
V
IFM
150
mA
Double * Forward current (DC)
Series
IF
0.60+0.05
–0.03
1.60+0.05
–0.03
3°
30
(0.15)
MA3S795D MA3S795E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode1, 2 Cathode 1, 2
EIAJ : SC-89
SSMini3-F2 Package
Marking Symbol
• MA3S795D: M3D • MA3S795E: M3D
110
Double * 0.88+0.05
–0.03
(0.80) (0.80)
0 to 0.1
Symbol
Peak forward current Series
3°
0.28±0.05
(0.51)
(0.51)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
(0.44)
1 2
1.60±0.05
• High-density mounting is possible
• Low forward voltage VF , optimum for low voltage rectification:
VF < 0.3 V (at IF = 1 mA)
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• SS-Mini type 3-pin package
(0.80)
3
■ Features
(0.375)
For switching
mA
Internal Connection
20
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
3
3
Note) *: Value per chip
1
■ Electrical Characteristics Ta = 25°C
Parameter
1
2
2
D
Symbol
Conditions
E
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 30 V
30
µA
Forward voltage (DC)
VF1
IF = 1 mA
0.3
V
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
trr
η
Terminal capacitance
Reverse recovery time
*
Detection efficiency
1
1.5
pF
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1
ns
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
Output Pulse
t
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: August 2001
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
SKH00063AED
1
MA3S795D, MA3S795E
IF  V F
IR  V R
103
VF  Ta
104
1.0
Ta = 125°C
75°C 25°C
−20°C
10
1
0.8
75°C
102
25°C
10
10–1
1
10−2
10−1
Forward voltage VF (V)
Ta = 125°C
103
Reverse current IR (µA)
Forward current IF (mA)
102
IF = 30 mA
0.6
10 mA
0.4
0.2
1 mA
0
0.4
0.8
1.2
1.6
2.0
2.4
0
Forward voltage VF (V)
5
IR  T a
103
25
30
3V
1V
102
10
1
f = 1 MHz
Ta = 25°C
2.5
2.0
1.5
1.0
0.5
0
40
80
120
160
Ambient temperature Ta (°C)
200
0
0
5
10
15
20
25
Reverse voltage VR (V)
SKH00063AED
0
40
80
120
160
Ambient temperature Ta (°C)
Ct  VR
Terminal capacitance Ct (pF)
Reverse current IR (µA)
20
3.0
VR = 25 V
2
15
Reverse voltage VR (V)
104
10−1
−40
10
0
−40
30
200
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2001 MAR