Power Transistors 2SC4985 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● ● 10.8±0.2 ● High collector to base voltage VCBO High collector to emitter VCEO Allowing automatic insertion with radial taping 90° 2.5±0.1 ■ Features 4.5±0.2 3.8±0.2 7.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.7±0.1 16.0±1.0 ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 900 V Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 7 V Peak collector current ICP 2 A Collector current IC 1 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C ■ Electrical Characteristics 0.7±0.1 0.5±0.1 2.5±0.2 2.5±0.2 0.4±0.1 2.05±0.2 0.8C 1 2 1:Emitter 2:Collector 3:Base MT3 Type Package 3 (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 900V, IE = 0 50 µA Emitter cutoff current IEBO VEB = 7V, IC = 0 50 µA Collector to emitter voltage VCEO IC = 1mA, IB = 0 hFE1 VCE = 5V, IC = 50mA 6 3 Forward current transfer ratio hFE2 VCE = 5V, IC = 500mA Collector to emitter saturation voltage VCE(sat) IC = 200mA, IB = 40mA Base to emitter saturation voltage VBE(sat) IC = 200mA, IB = 40mA Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Turn-on time ton Storage time tstg Fall time tf IC = 200mA, IB1 = 40mA, IB2 = –80mA, VCC = 250V 800 V 1.5 1 80 V V MHz 1 µs 3 µs 1 µs 1 Power Transistors 2SC4985 PC — Ta IC — VCE VCE(sat) — IC 1.2 TC=25˚C Without heat sink IB=200mA 1.0 1.6 Collector current IC (A) Collector power dissipation PC (W) Collector to emitter saturation voltage VCE(sat) (V) 2.0 1.2 0.8 0.4 0.8 100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 0.6 0.4 20mA 0.2 10mA 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 3 25˚C 1 0.3 –25˚C 0.1 0.03 0.01 0.01 Collector to emitter voltage VCE (V) VBE(sat) — IC TC=100˚C IC/IB=5 0.03 0.1 0.3 1 Collector current IC (A) hFE — IC fT — IC IC/IB=5 25˚C 1 TC=–25˚C 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 Collector current IC (A) 2 1 30 25˚C TC=100˚C 10 –25˚C 3 1 0.3 0.1 0.01 VCE=10V f=200MHz TC=25˚C VCE=5V 100 Transition frequency fT (MHz) 3 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 1000 300 100 30 10 3 1 0.3 0.03 0.1 0.3 1 Collector current IC (A) 3 0.1 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1