Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1124 Unit: mm 5.9±0.2 4.9±0.2 ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7±0.1 +0.3 ● 0.7–0.2 ● 8.6±0.2 ■ Features (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5 V Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 +0.2 0.45–0.1 0.45–0.1 1.27 1.27 1 2 3 3.2 ■ Absolute Maximum Ratings 13.5±0.5 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 1 µA Collector cutoff current ICBO VCB = 100V, IE = 0 Collector to emitter voltage VCEO IC = 0.1mA, IB = 0 150 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V Forward current transfer ratio hFE * VCE = 5V, IC = 10mA Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Noise voltage NV *h FE VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 130 330 1 160 150 V MHz 3 pF 300 mV Rank classification Rank R S hFE 130 ~ 220 185 ~ 330 1 2SC2632 Transistor PC — Ta IC — VBE VCE(sat) — IC 120 Collector to emitter saturation voltage VCE(sat) (V) 1.2 1.0 25˚C 100 Collector current IC (mA) 0.8 0.6 0.4 0.2 Ta=75˚C –25˚C 80 60 40 20 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 0.4 0.8 1.2 300 Transition frequency fT (MHz) Forward current transfer ratio hFE 500 400 Ta=75˚C 25˚C –25˚C 200 100 1 3 10 30 Collector current IC (mA) 2 10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 1 100 250 200 150 100 50 0 –1 3 10 30 100 Collector current IC (mA) Cob — VCB VCB=10V f=100MHz Ta=25˚C VCE=10V 0.3 30 fT — I E 600 0 0.1 2.0 IC/IB=10 Base to emitter voltage VBE (V) hFE — IC 300 1.6 5 Collector output capacitance Cob (pF) Collector power dissipation PC (W) VCE=10V 100 IE=0 f=1MHz Ta=25˚C 4 3 2 1 0 –3 –10 –30 Emitter current IE (mA) –100 1 3 10 30 100 Collector to base voltage VCB (V)