Final Datasheet, September 2007 2ED020I12-FI Dual IGBT Driver IC Power Managment & Drives N e v e r s t o p t h i n k i n g . 2ED020I12-FI Revision History: 2007-09-10 Final Datasheet Previous Version: Page Preliminary Datasheet V3.2 2ED020I12-FI Subjects (major changes since last revision) 12 Update Operating Range 21 Update Application Advices For questions on technology, delivery and prices, please contact the Infineon offices in Germany or the Infineon companies and representatives worldwide: See our webpage at http://www.infineon.com/gatedriver Edition 2007-09-10 Published by Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg © Infineon 2007. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies AG is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon office in Germany or our Infineon representatives worldwide (see at http://www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon office. Infineon components may only be used in life-support devices or systems with the express written approval of Infineon, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2ED020I12-FI Final Data Dual IGBT Driver IC 2ED020I12-FI Product Highlights • • • • • • • • Fully operational to ±1.2 kV Power supply operating range from 14 to 18 V Gate drive currents of +1 A / –2 A Matched propagation delay for both channels High dV/dt immunity Low power consumption General purpose operational amplifier General purpose comparator PG-DS O-18-2 Features • • • • • • • • Floating high side driver Undervoltage lockout for both channels 3.3 V and 5 V TTL compatible inputs CMOS Schmitt-triggered inputs with pull-down Non-inverting inputs Interlocking inputs Dedicated shutdown input with pull-up RoHS compliant Type 2ED020I12-FI Final Datasheet Ordering Code SP0002-65782 Package Packaging PG-DSO-18-2 Tape&Reel 3 September 2007 High and Low Side Driver 2ED020I12-FI Final Data Overview 1 Overview The 2ED020I12-FI is a high voltage, high speed power MOSFET and IGBT driver with interlocking high and low side referenced outputs. The floating high side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver the 2ED020I12-FI is equipped with a dedicated shutdown input. All logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. Both drivers are designed to drive an N-channel power MOSFET or IGBT which operate up to 1.2 kV. In addition, a general purpose operational amplifier and a general purpose comparator are provided which may be used for instance for current measurement or overcurrent detection. Final Datasheet 4 September 2007 High and Low Side Driver 2ED020I12-FI Final Data Pin Configuration and Functionality 2 Pin Configuration and Functionality 2.1 Pin Configuration GNDH InL OutH SD VSH 2ED020I12-FI InH GND CPO CP CP+ GNDH n.c. OPO VSL OP - OutL OP+ GNDL P-DSO-18-2 (300mil) Figure 1 Pin Configuration (top view) 2.2 Pin Definitions and Functions Pin Symbol Function 1 InH Logic input for high side driver 2 InL Logic input for low side driver 3 SD Logic input for shutdown of both drivers 4 GND Common ground 5 CPO Open collector output of general purpose comparator 6 CP– Inverting input of general purpose comparator 7 CP+ Non-inverting input of general purpose comparator 8 Table 1 OPO Output of general purpose OP Pin Description Final Datasheet 5 September 2007 High and Low Side Driver 2ED020I12-FI Final Data Pin Configuration and Functionality Pin Symbol Function 9 OP– Inverting input of general purpose OP 10 OP+ Non-inverting input of general purpose OP 11 GNDL Low side power ground 1) 12 OutL Low side gate driver output 13 VSL Low side supply voltage 14 n.c. (not connected) 15 n.e. (not existing) 16 n.e. (not existing) 17 GNDH High side (power) ground 18 VSH High side supply voltage 19 OutH High side gate driver output 20 Table 1 1) GNDH High side (power) ground Pin Description (cont’d) Please note : GNDL has to be connected directly to GND Final Datasheet 6 September 2007 High and Low Side Driver 2ED020I12-FI Final Data Block Diagram 3 Block Diagram High Side VCC Voltage Supply UVLO RX Logic VSH SD InH OutH GNDH InL CLT CPO TX VSL Input Logic CP+ CP CP OPO Delay OutL UVLO OP+ OP OP - Voltage Supply GND GNDL Low Side Figure 2 Block Diagram Final Datasheet 7 September 2007 High and Low Side Driver 2ED020I12-FI Final Data Functional Description 4 Functional Description 4.1 Power Supply The power supply of both sides, “VSL” and “VSH”, is monitored by an undervoltage lockout block (UVLO) which enables operation of the corresponding side when the supply voltage reaches the “on” threshold. Afterwards the internal voltage reference and the biasing circuit are enabled. When the supply voltage (VSL, VSH) drops below the “off” threshold, the circuit is disabled. 4.2 Logic Inputs The logic inputs InH, InL and SD are fed into Schmitt-Triggers with thresholds compatible to 3.3V and 5V TTL. When SD is enabled (low), InH and InL are disabled. If InH is high (while InL is low), OutH is enabled and vice versa. However, if both signals are high, they are internally disabled until one of them gets low again. This is due to the interlocking logic of the device. See Figure 3 (section 4.7). 4.3 Gate Driver 2ED020I12-FI features two hard-switching gate drivers with N-channel output stages capable to source 1A and to sink 2A peak current. Both drivers are equipped with activelow-clamping capability. Furthermore, they feature a large ground bounce ruggedness in order to compensate ground bounces caused by a turn-off of the driven IGBT. 4.4 General Purpose Operational Amplifier This general purpose operational amplifier can be applied for current measurement of the driven low-side IGBT. It is dedicated for fast operation with a gain of at least 3. The OP is equipped with a -0.1 to 2V input stage and a rail-to-rail output stage which is capable to drive ± 5mA. 4.5 General Purpose Comparator The general purpose comparator can be applied for overcurrent detection of the low side IGBT. A dedicated offset as well as a pull-up and pull-down resistor has been introduced to its inputs for security reasons. 4.6 Coreless Transformer (CLT) In order to enable signal transmission across the isolation barrier between low-side and high-side driver, a transformer based on CLT-Technology is employed. Signals, that are to be transmitted, are specially encoded by the transmitter and correspondingly restored by the receiver. In this way EMI due to variations of GNDH (dVGNDH/dt) or the magnetic flux density (dΗ/dt) can be suppresed.To compensate the additional propagation delay Final Datasheet 8 September 2007 High and Low Side Driver 2ED020I12-FI Final Data Functional Description of transmitter, level shifter and receiver, a dedicated propagation delay is introduced into the low-side driver. 4.7 Diagrams InH InL /SD OutH OutL Figure 3 Input/Output Timing Diagram Final Datasheet 9 September 2007 High and Low Side Driver 2ED020I12-FI Final Data Electrical Parameters 5 Electrical Parameters 5.1 Absolute Maximum Ratings Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the integrated circuit. Unless otherwise noted all parameters refer to GND. Parameter Symbol Limit Values min. max. Unit Remarks High side ground GNDH – 1200 1200 V High side supply voltage VSH – 0.3 20 V 1) High side gate driver output OutH – 0.3 VSH + 0.3 V 1) Low side ground GNDL – 0.3 5.3 V Low side supply voltage VSL – 0.3 20 V 2) Low side gate driver output OutL – 0.3 VSL + 0.3 V 3) Logic input voltages (InH, InL, SD) VIN – 0.3 5.3 V OP input voltages (OP–, OP+) VOP – 0.3 5.3 V OP output voltage VOPO – 0.3 5.3 V CP input voltages (CP–, CP+) VCP – 0.3 5.3 V CP output voltage VCPO – 0.3 5.3 V CP output maximal sink current ICPO 5 mA High side ground, voltage transient dVGNDH /dt – 50 50 V/ns ESD Capability VESD — 2 kV 5) Package power disipation @TA = 25°C PD — 1.4 W 6) Thermal resistance (both chips active), junction to ambient RTHJA — 90 K/W 7) Final Datasheet — 10 4) 4) Human Body Model September 2007 High and Low Side Driver 2ED020I12-FI Final Data Electrical Parameters Parameter Symbol Limit Values min. Unit Remarks max. Thermal resistance (high side chip), junction to ambient RTHJA(HS) — 110 K/W 6) Thermal resistance (low side chip), junction to ambient RTHJA(LS) — 110 K/W 6) Junction temperature TJ — 150 °C Storage temperature TS 150 °C – 55 1) With reference to high side ground GNDH. 2) With respect to both GND and GNDL. 3) With respect to GNDL. 4) Please note the different specifications for the operating range (section 5.2). 5) According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor). 6) Considering Rth(both chips active)=90K/W 7) Device soldered to reference PCB without cooling area 5.2 Operating Range Note: Within the operating range the IC operates as described in the functional description. Unless otherwise noted all parameters refer to GND. Parameter Symbol min. max. High side ground GNDH – 1200 1200 V High side supply voltage VSH 14 18 V 1) Low side supply voltage VSL 14 18 V 2) Logic input voltages (InH, InL, SD) VIN 0 5 V OP input voltages (OP–, OP+) VOP – 0.1 2 V CP input voltages (CP–, CP+) VCP – 0.1 2 V Final Datasheet Limit Values 11 Unit Remarks September 2007 High and Low Side Driver 2ED020I12-FI Final Data Electrical Parameters Parameter Symbol Limit Values min. max. Unit Remarks Junction temperature TJ – 40 105 °C Industrial applications, useful lifetime 87600h Junction temperature TJ – 40 125 °C Other applications, useful lifetime 15000h 1) With reference to high side ground GNDH. 2) With respect to both GND and GNDL. 5.3 Electrical Characteristics Note: The electrical characteristics involve the spread of values guaranteed for the supply voltages, load and junction temperature given below. Typical values represent the median values, which are related to production processes. Unless otherwise noted all voltages are given with respect to ground (GND). VSL = VSH – GNDH = 15 V, CL = 1 nF, TA = 25 °C. Positive currents are assumed to be flowing into pins. Voltage Supply Parameter Symbol Limit Values min. typ Unit Test Condition µA GNDH = 1.2 kV GNDL = 0 V max. High side leakage current IGNDH — 0 — High side quiescent supply current IVSH — 2.4 3.2 mA VSH = 15 V1) — 2.3 3.2 mA VSH = 15 V1) TJ = 125 °C High side undervoltage VVSH1) lockout, upper threshold 10.9 12.2 13.5 V High side undervoltage VVSH1) lockout, lower threshold — 11.2 — V High side undervoltage ∆VVSH lockout hysteresis Final Datasheet 0.7 1 12 1.3 V September 2007 High and Low Side Driver 2ED020I12-FI Final Data Electrical Parameters Voltage Supply (cont’d) Parameter Low side quiescent supply current Symbol Limit Values Unit Test Condition 5.0 mA VSL = 15 V 5.5 mA VSL = 15 V TJ = 125 °C min. typ max. — 3.9 3.9 IVSL Low side undervoltage VVSL lockout, upper threshold 10.7 12 13.3 V Low side undervoltage VVSL lockout, lower threshold — 11 — V Low side undervoltage lockout hysteresis 1) ∆VVSL 0.7 1 1.3 V With reference to high side ground GNDH. Logic Inputs Parameter Symbol Limit Values min. Logic “1” input voltages VIN (InH, InL, SD) typ 2 — Unit Test Condition max. — V Logic “0” input voltages VIN (InH, InL, SD) — — 0.8 V Logic “1” input currents IIN (InH, InL) — 40 55 µA VIN = 5 V Logic “0” input currents IIN (InH, InL) — 0 — µA VIN = 0 V Logic “1” input currents IIN (SD) — 0 — µA VIN = 5 V — µA VIN = 0 V Logic “0” input currents IIN (SD) Final Datasheet –60 –40 13 September 2007 High and Low Side Driver 2ED020I12-FI Final Data Electrical Parameters Gate Drivers Parameter Symbol Limit Values min. typ Unit Test Condition max. High side high level output voltage VVSH – VOutH — 1.4 1.7 V IOutH = –1mA VInH = 5V High side low level output voltage VOutH1) — — 0.1 V IOutH = 1mA VInH = 0V Low side high level output voltage VVSL – VOutL — 1.4 1.7 V IOutL = –1mA VInL = 5V Low side low level output voltage VOutL — — 0.1 V IOutL = 1mA VInL = 0V Output high peak current (OutL, OutH) IOut — — –1 A VIN = 5 V VOut = 0 V Output low peak current IOut (OutL, OutH) High side active low clamping Low side active low clamping 1) VOutH1) VOutL 2 — — A VIN = 0 V VOut = 15 V — 2.6 3 V InH =0V, VSH open IOutH =200mA — 2.7 3.2 V InH =0V, VSH open IOutH =200mA TJ = 125 °C — 2.6 3 V InL =0V, VSL open IOutL =200mA — 2.7 3.2 V InL =0V, VSL open IOutL =200mA TJ = 125 °C Unit Test Condition With reference to high side ground GNDH. Dynamic Characteristics Parameter Symbol Turn-on propagation delay tON Limit Values min. Final Datasheet typ max. — 85 105 ns GNDH = 0 V 20% Vout — 95 120 ns GNDH = 0 V 20% Vout TJ = 125 °C 14 September 2007 High and Low Side Driver 2ED020I12-FI Final Data Electrical Parameters Dynamic Characteristics (cont’d) Parameter Symbol Limit Values Unit Test Condition 115 ns 80% Vout 100 130 ns 80% Vout TJ = 125 °C — 85 115 ns 80% Vout — 100 130 ns 80% Vout TJ = 125 °C — 20 40 ns 20% to 80% Vout — 30 50 ns 20% to 80% Vout TJ = 125 °C — 20 35 ns 80% to 20% Vout — 25 40 ns 80% to 20% Vout TJ = 125 °C — 15 25 ns TJ = 25°C see Figure 6 — 15 30 ns TJ = 125°C see Figure 6 — 50 75 ns 1) — 55 80 ns 1) min. Turn-off propagation delay tOFF Shutdown propagation delay tSD Turn-on rise time tr Turn-off fall time tf Delay mismatch (high & ∆t low side turn-on/off) Minimum turn-on input (InH, InL) pulse width Minimum turn-off input (InH, InL) pulse width 1) tpON tpOFF typ max. — 85 — — 50 75 ns 1) — 55 80 ns 1) TJ = 125°C TJ = 125 °C InH-Pulses shorter than the “minimum turn-on(off) input pulse width” are prolonged to 50ns (See Figure 7). InLInput doesn´t have this feature. General Purpose Operational Amplifier OP Parameter Symbol Limit Values OP input offset voltage ∆VIN –10 OP input offset voltage drift VDrift — ±15 OP input high currents (OP–, OP+) IIN — 0 min. Final Datasheet Unit typ max. 0 10 15 — 0.2 Test Condition mV µV/K µA VIN = 2 V September 2007 High and Low Side Driver 2ED020I12-FI Final Data Electrical Parameters General Purpose Operational Amplifier OP (cont’d) Parameter Symbol Limit Values min. typ 0 Unit Test Condition — µA VIN = 0 V — V VOP– = 0 V VOP+ = 2 V max. OP input low currents (OP–, OP+) IIN – 0.2 OP high output voltage VOPO 4.9 OP low output voltage VOPO — — 0.1 V VOP– = 2 V VOP+ = 0 V OP output source current IOPO — — –5 mA VOP+ = 2 V VOP– = 0 V VOPO = 0 V OP output sink current IOPO VOP+ = 0 V VOP– = 2 V VOPO = 5 V OP open loop gain AOL OP gain-bandwidth product OP phase margin 2) — 5 — — mA — 120 — dB A x BW — 20 — MHz 1) Φ — 70 — ° 1) Unit Test Condition 1) Design value 2) Due to inevitable parasitics a minimal gain of 3 is recommended General Purpose Comparator CP Parameter Symbol Limit Values min. typ CP input offset voltage ∆VIN CP input high current ICP– CP input low current ICP+ CP low output voltage VCPO — — CP output leakage current ICPO — — Final Datasheet –45 — –35 max. –30 –15 mV VCP+ = VCP- 20 35 µA VCP– = 5V µA VCP+ = 0 V 0.2 V VCP+ = 2 V ICPO = 1 mA 5 µA VCP+ = 0 V VCP– = 2 V VCPO = 5 V –20 16 — September 2007 High and Low Side Driver 2ED020I12-FI Final Data Electrical Parameters General Purpose Comparator CP (cont’d) Parameter Symbol Limit Values min. typ Unit Test Condition max. CP switch-on delay td — 100 — ns RCPO = 4.7kΩ Vres = 5V VCPO = 4V CP switch-off delay td — 300 — ns RCPO = 4.7kΩ Vres = 5V VCPO = 1V Final Datasheet 17 September 2007 Final Data High and Low Side Driver 2ED020I12-FI Package Outline 6 Package Outline Note: dimensions are given in mm. 6.1 Soldering Profile The soldering profile qualified for 2ED020I12-FI (according to the standard IPC/JEDEC J-STD-020C) is moisture sensitivity level 3. The peak reflow temperature for its package (volume < 350 mm3) is 260 +0/-5 °C. Final Datasheet 18 September 2007 High and Low Side Driver 2ED020I12-FI Final Data Diagrams 7 Diagrams InH/L 2V 0.8V tr tOFF 80% 80% OutH/L 20% 20% tf tON Figure 4 Switching Time Waveform Definition /SD 0.8V tSD 80% OutH/L Figure 5 Shutdown Waveform Definition Final Datasheet 19 September 2007 High and Low Side Driver 2ED020I12-FI Final Data Diagrams InL 2V 2V 0.8V 0.8V InH OutL 80% 80% 20% 20% OutH tOFFH tOFFL tONH tONL ∆t = max (|tONH - tOFFL| , |tOFFH - tONL|) Figure 6 Delay Matching Waveform Definitions InH OutH 50ns 50ns Figure 7 Short InH-Pulses Prolongation Final Datasheet 20 September 2007 Final Data High and Low Side Driver 2ED020I12-FI Application Advices 8 Application Advices 8.1 Operational Amplifier To minimize the current consumption when the operational amplifier is not used, it is necessary to connect both inputs properly, e.g connect OP+ to 5V and OP- to 0V or vice versa. On the other hand, the operational amplifier cannot operate with a follower configuration , i.e OP- = OPO. A minimum gain of 3 has to be used so that its output OPO has a stable behaviour. 8.2 Power Supply a) The connection of a capacitor (>10nF) as close as possible to the supply pins VSH, VSL is recommended for avoiding that possible oscillations in the supply voltage can cause erroneous operation of the output driver stage. Total value of capacitance connected to the supply terminals has to be determined by taking into account gatecharge, peak current, supply voltage and kind of power supply. b) If a bootstrap power supply for the high side driver is applied, a resistor of 10Ω minimum in series with the bootstrap diode is recommended. Final Datasheet 21 September 2007 Total Quality Management Qualität hat für uns eine umfassende Bedeutung. Wir wollen allen Ihren Ansprüchen in der bestmöglichen Weise gerecht werden. Es geht uns also nicht nur um die Produktqualität – unsere Anstrengungen gelten gleichermaßen der Lieferqualität und Logistik, dem Service und Support sowie allen sonstigen Beratungs- und Betreuungsleistungen. Quality takes on an all encompassing significance at Infineon AG. For us it means living up to each and every one of your demands in the best possible way. So we are not only concerned with product quality. We direct our efforts equally at quality of supply and logistics, service and support, as well as all the other ways in which we advise and attend to you. Dazu gehört eine bestimmte Geisteshaltung unserer Mitarbeiter. Total Quality im Denken und Handeln gegenüber Kollegen, Lieferanten und Ihnen, unserem Kunden. Unsere Leitlinie ist jede Aufgabe mit „Null Fehlern“ zu lösen – in offener Sichtweise auch über den eigenen Arbeitsplatz hinaus – und uns ständig zu verbessern. Part of this is the very special attitude of our staff. Total Quality in thought and deed, towards co-workers, suppliers and you, our customer. Our guideline is “do everything with zero defects”, in an open manner that is demonstrated beyond your immediate workplace, and to constantly improve. Unternehmensweit orientieren wir uns dabei auch an „top“ (Time Optimized Processes), um Ihnen durch größere Schnelligkeit den entscheidenden Wettbewerbsvorsprung zu verschaffen. Geben Sie uns die Chance, hohe Leistung durch umfassende Qualität zu beweisen. Wir werden Sie überzeugen. http://www.infineon.com Published by Infineon Technologies AG Throughout the corporation we also think in terms of Time Optimized Processes (top), greater speed on our part to give you that decisive competitive edge. Give us the chance to prove the best of performance through the best of quality – you will be convinced.