2ED020I12-FI Data Sheet (685 KB, EN/DE)

Final Datasheet, September 2007
2ED020I12-FI
Dual IGBT Driver IC
Power Managment & Drives
N e v e r
s t o p
t h i n k i n g .
2ED020I12-FI
Revision History: 2007-09-10 Final Datasheet
Previous Version:
Page
Preliminary Datasheet V3.2 2ED020I12-FI
Subjects (major changes since last revision)
12
Update Operating Range
21
Update Application Advices
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See our webpage at http://www.infineon.com/gatedriver
Edition 2007-09-10
Published by Infineon Technologies AG,
Am Campeon 1-12,
D-85579 Neubiberg
© Infineon 2007.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
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Information
For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon office in Germany or our Infineon representatives worldwide (see at http://www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question, please contact your nearest Infineon office.
Infineon components may only be used in life-support devices or systems with the express written approval of Infineon, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
2ED020I12-FI
Final Data
Dual IGBT Driver IC
2ED020I12-FI
Product Highlights
•
•
•
•
•
•
•
•
Fully operational to ±1.2 kV
Power supply operating range from 14 to 18 V
Gate drive currents of +1 A / –2 A
Matched propagation delay for both channels
High dV/dt immunity
Low power consumption
General purpose operational amplifier
General purpose comparator
PG-DS O-18-2
Features
•
•
•
•
•
•
•
•
Floating high side driver
Undervoltage lockout for both channels
3.3 V and 5 V TTL compatible inputs
CMOS Schmitt-triggered inputs with pull-down
Non-inverting inputs
Interlocking inputs
Dedicated shutdown input with pull-up
RoHS compliant
Type
2ED020I12-FI
Final Datasheet
Ordering Code
SP0002-65782
Package
Packaging
PG-DSO-18-2 Tape&Reel
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September 2007
High and Low Side Driver
2ED020I12-FI
Final Data
Overview
1
Overview
The 2ED020I12-FI is a high voltage, high speed power MOSFET and IGBT driver with
interlocking high and low side referenced outputs. The floating high side driver may be
supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic
input of each driver the 2ED020I12-FI is equipped with a dedicated shutdown input. All
logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. Propagation
delays are matched to simplify use in high frequency applications. Both drivers are
designed to drive an N-channel power MOSFET or IGBT which operate up to 1.2 kV. In
addition, a general purpose operational amplifier and a general purpose comparator are
provided which may be used for instance for current measurement or overcurrent
detection.
Final Datasheet
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2ED020I12-FI
Final Data
Pin Configuration and Functionality
2
Pin Configuration and Functionality
2.1
Pin Configuration
GNDH
InL
OutH
SD
VSH
2ED020I12-FI
InH
GND
CPO
CP CP+
GNDH
n.c.
OPO
VSL
OP -
OutL
OP+
GNDL
P-DSO-18-2 (300mil)
Figure 1 Pin Configuration (top view)
2.2
Pin Definitions and Functions
Pin
Symbol
Function
1
InH
Logic input for high side driver
2
InL
Logic input for low side driver
3
SD
Logic input for shutdown of both drivers
4
GND
Common ground
5
CPO
Open collector output of general purpose comparator
6
CP–
Inverting input of general purpose comparator
7
CP+
Non-inverting input of general purpose comparator
8
Table 1
OPO
Output of general purpose OP
Pin Description
Final Datasheet
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High and Low Side Driver
2ED020I12-FI
Final Data
Pin Configuration and Functionality
Pin
Symbol
Function
9
OP–
Inverting input of general purpose OP
10
OP+
Non-inverting input of general purpose OP
11
GNDL
Low side power ground 1)
12
OutL
Low side gate driver output
13
VSL
Low side supply voltage
14
n.c.
(not connected)
15
n.e.
(not existing)
16
n.e.
(not existing)
17
GNDH
High side (power) ground
18
VSH
High side supply voltage
19
OutH
High side gate driver output
20
Table 1
1)
GNDH
High side (power) ground
Pin Description (cont’d)
Please note : GNDL has to be connected directly to GND
Final Datasheet
6
September 2007
High and Low Side Driver
2ED020I12-FI
Final Data
Block Diagram
3
Block Diagram
High Side
VCC
Voltage
Supply
UVLO
RX
Logic
VSH
SD
InH
OutH
GNDH
InL
CLT
CPO
TX
VSL
Input
Logic
CP+
CP
CP OPO
Delay
OutL
UVLO
OP+
OP
OP -
Voltage
Supply
GND
GNDL
Low Side
Figure 2 Block Diagram
Final Datasheet
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High and Low Side Driver
2ED020I12-FI
Final Data
Functional Description
4
Functional Description
4.1
Power Supply
The power supply of both sides, “VSL” and “VSH”, is monitored by an undervoltage
lockout block (UVLO) which enables operation of the corresponding side when the
supply voltage reaches the “on” threshold. Afterwards the internal voltage reference and
the biasing circuit are enabled. When the supply voltage (VSL, VSH) drops below the
“off” threshold, the circuit is disabled.
4.2
Logic Inputs
The logic inputs InH, InL and SD are fed into Schmitt-Triggers with thresholds compatible
to 3.3V and 5V TTL. When SD is enabled (low), InH and InL are disabled. If InH is high
(while InL is low), OutH is enabled and vice versa. However, if both signals are high, they
are internally disabled until one of them gets low again. This is due to the interlocking
logic of the device. See Figure 3 (section 4.7).
4.3
Gate Driver
2ED020I12-FI features two hard-switching gate drivers with N-channel output stages
capable to source 1A and to sink 2A peak current. Both drivers are equipped with activelow-clamping capability. Furthermore, they feature a large ground bounce ruggedness
in order to compensate ground bounces caused by a turn-off of the driven IGBT.
4.4
General Purpose Operational Amplifier
This general purpose operational amplifier can be applied for current measurement of
the driven low-side IGBT. It is dedicated for fast operation with a gain of at least 3. The
OP is equipped with a -0.1 to 2V input stage and a rail-to-rail output stage which is
capable to drive ± 5mA.
4.5
General Purpose Comparator
The general purpose comparator can be applied for overcurrent detection of the low side
IGBT. A dedicated offset as well as a pull-up and pull-down resistor has been introduced
to its inputs for security reasons.
4.6
Coreless Transformer (CLT)
In order to enable signal transmission across the isolation barrier between low-side and
high-side driver, a transformer based on CLT-Technology is employed. Signals, that are
to be transmitted, are specially encoded by the transmitter and correspondingly restored
by the receiver. In this way EMI due to variations of GNDH (dVGNDH/dt) or the magnetic
flux density (dΗ/dt) can be suppresed.To compensate the additional propagation delay
Final Datasheet
8
September 2007
High and Low Side Driver
2ED020I12-FI
Final Data
Functional Description
of transmitter, level shifter and receiver, a dedicated propagation delay is introduced into
the low-side driver.
4.7
Diagrams
InH
InL
/SD
OutH
OutL
Figure 3 Input/Output Timing Diagram
Final Datasheet
9
September 2007
High and Low Side Driver
2ED020I12-FI
Final Data
Electrical Parameters
5
Electrical Parameters
5.1
Absolute Maximum Ratings
Note: Absolute maximum ratings are defined as ratings, which when being exceeded
may lead to destruction of the integrated circuit. Unless otherwise noted all
parameters refer to GND.
Parameter
Symbol
Limit Values
min.
max.
Unit
Remarks
High side ground
GNDH
– 1200
1200
V
High side supply voltage
VSH
– 0.3
20
V
1)
High side gate driver output OutH
– 0.3
VSH + 0.3
V
1)
Low side ground
GNDL
– 0.3
5.3
V
Low side supply voltage
VSL
– 0.3
20
V
2)
Low side gate driver output OutL
– 0.3
VSL + 0.3
V
3)
Logic input voltages
(InH, InL, SD)
VIN
– 0.3
5.3
V
OP input voltages
(OP–, OP+)
VOP
– 0.3
5.3
V
OP output voltage
VOPO
– 0.3
5.3
V
CP input voltages
(CP–, CP+)
VCP
– 0.3
5.3
V
CP output voltage
VCPO
– 0.3
5.3
V
CP output maximal sink
current
ICPO
5
mA
High side ground, voltage
transient
dVGNDH /dt – 50
50
V/ns
ESD Capability
VESD
—
2
kV
5)
Package power disipation
@TA = 25°C
PD
—
1.4
W
6)
Thermal resistance (both
chips active), junction to
ambient
RTHJA
—
90
K/W
7)
Final Datasheet
—
10
4)
4)
Human
Body Model
September 2007
High and Low Side Driver
2ED020I12-FI
Final Data
Electrical Parameters
Parameter
Symbol
Limit Values
min.
Unit
Remarks
max.
Thermal resistance (high
side chip), junction to
ambient
RTHJA(HS)
—
110
K/W
6)
Thermal resistance (low
side chip), junction to
ambient
RTHJA(LS)
—
110
K/W
6)
Junction temperature
TJ
—
150
°C
Storage temperature
TS
150
°C
– 55
1)
With reference to high side ground GNDH.
2)
With respect to both GND and GNDL.
3)
With respect to GNDL.
4)
Please note the different specifications for the operating range (section 5.2).
5)
According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor).
6)
Considering Rth(both chips active)=90K/W
7)
Device soldered to reference PCB without cooling area
5.2
Operating Range
Note: Within the operating range the IC operates as described in the functional
description. Unless otherwise noted all parameters refer to GND.
Parameter
Symbol
min.
max.
High side ground
GNDH
– 1200
1200
V
High side supply voltage
VSH
14
18
V
1)
Low side supply voltage
VSL
14
18
V
2)
Logic input voltages
(InH, InL, SD)
VIN
0
5
V
OP input voltages
(OP–, OP+)
VOP
– 0.1
2
V
CP input voltages
(CP–, CP+)
VCP
– 0.1
2
V
Final Datasheet
Limit Values
11
Unit
Remarks
September 2007
High and Low Side Driver
2ED020I12-FI
Final Data
Electrical Parameters
Parameter
Symbol
Limit Values
min.
max.
Unit
Remarks
Junction temperature
TJ
– 40
105
°C
Industrial
applications,
useful
lifetime
87600h
Junction temperature
TJ
– 40
125
°C
Other
applications,
useful
lifetime
15000h
1)
With reference to high side ground GNDH.
2)
With respect to both GND and GNDL.
5.3
Electrical Characteristics
Note: The electrical characteristics involve the spread of values guaranteed for the
supply voltages, load and junction temperature given below. Typical values
represent the median values, which are related to production processes. Unless
otherwise noted all voltages are given with respect to ground (GND).
VSL = VSH – GNDH = 15 V, CL = 1 nF, TA = 25 °C. Positive currents are assumed
to be flowing into pins.
Voltage Supply
Parameter
Symbol
Limit Values
min.
typ
Unit
Test Condition
µA
GNDH = 1.2 kV
GNDL = 0 V
max.
High side
leakage current
IGNDH
—
0
—
High side quiescent
supply current
IVSH
—
2.4
3.2
mA
VSH = 15 V1)
—
2.3
3.2
mA
VSH = 15 V1)
TJ = 125 °C
High side undervoltage VVSH1)
lockout, upper threshold
10.9
12.2
13.5
V
High side undervoltage VVSH1)
lockout, lower threshold
—
11.2
—
V
High side undervoltage ∆VVSH
lockout hysteresis
Final Datasheet
0.7
1
12
1.3
V
September 2007
High and Low Side Driver
2ED020I12-FI
Final Data
Electrical Parameters
Voltage Supply (cont’d)
Parameter
Low side quiescent
supply current
Symbol
Limit Values
Unit
Test Condition
5.0
mA
VSL = 15 V
5.5
mA
VSL = 15 V
TJ = 125 °C
min.
typ
max.
—
3.9
3.9
IVSL
Low side undervoltage VVSL
lockout, upper threshold
10.7
12
13.3
V
Low side undervoltage VVSL
lockout, lower threshold
—
11
—
V
Low side undervoltage
lockout hysteresis
1)
∆VVSL
0.7
1
1.3
V
With reference to high side ground GNDH.
Logic Inputs
Parameter
Symbol
Limit Values
min.
Logic “1” input voltages VIN
(InH, InL, SD)
typ
2
—
Unit
Test Condition
max.
—
V
Logic “0” input voltages VIN
(InH, InL, SD)
—
—
0.8
V
Logic “1” input currents IIN
(InH, InL)
—
40
55
µA
VIN = 5 V
Logic “0” input currents IIN
(InH, InL)
—
0
—
µA
VIN = 0 V
Logic “1” input currents IIN
(SD)
—
0
—
µA
VIN = 5 V
—
µA
VIN = 0 V
Logic “0” input currents IIN
(SD)
Final Datasheet
–60
–40
13
September 2007
High and Low Side Driver
2ED020I12-FI
Final Data
Electrical Parameters
Gate Drivers
Parameter
Symbol
Limit Values
min.
typ
Unit
Test Condition
max.
High side high level
output voltage
VVSH –
VOutH
—
1.4
1.7
V
IOutH = –1mA
VInH = 5V
High side low level
output voltage
VOutH1)
—
—
0.1
V
IOutH = 1mA
VInH = 0V
Low side high level
output voltage
VVSL –
VOutL
—
1.4
1.7
V
IOutL = –1mA
VInL = 5V
Low side low level
output voltage
VOutL
—
—
0.1
V
IOutL = 1mA
VInL = 0V
Output high peak
current (OutL, OutH)
IOut
—
—
–1
A
VIN = 5 V
VOut = 0 V
Output low peak current IOut
(OutL, OutH)
High side active low
clamping
Low side active low
clamping
1)
VOutH1)
VOutL
2
—
—
A
VIN = 0 V
VOut = 15 V
—
2.6
3
V
InH =0V, VSH open
IOutH =200mA
—
2.7
3.2
V
InH =0V, VSH open
IOutH =200mA
TJ = 125 °C
—
2.6
3
V
InL =0V, VSL open
IOutL =200mA
—
2.7
3.2
V
InL =0V, VSL open
IOutL =200mA
TJ = 125 °C
Unit
Test Condition
With reference to high side ground GNDH.
Dynamic Characteristics
Parameter
Symbol
Turn-on propagation
delay
tON
Limit Values
min.
Final Datasheet
typ
max.
—
85
105
ns
GNDH = 0 V
20% Vout
—
95
120
ns
GNDH = 0 V
20% Vout
TJ = 125 °C
14
September 2007
High and Low Side Driver
2ED020I12-FI
Final Data
Electrical Parameters
Dynamic Characteristics (cont’d)
Parameter
Symbol
Limit Values
Unit
Test Condition
115
ns
80% Vout
100
130
ns
80% Vout
TJ = 125 °C
—
85
115
ns
80% Vout
—
100
130
ns
80% Vout
TJ = 125 °C
—
20
40
ns
20% to 80% Vout
—
30
50
ns
20% to 80% Vout
TJ = 125 °C
—
20
35
ns
80% to 20% Vout
—
25
40
ns
80% to 20% Vout
TJ = 125 °C
—
15
25
ns
TJ = 25°C
see Figure 6
—
15
30
ns
TJ = 125°C
see Figure 6
—
50
75
ns
1)
—
55
80
ns
1)
min.
Turn-off propagation
delay
tOFF
Shutdown propagation
delay
tSD
Turn-on rise time
tr
Turn-off fall time
tf
Delay mismatch (high & ∆t
low side turn-on/off)
Minimum turn-on input
(InH, InL) pulse width
Minimum turn-off input
(InH, InL) pulse width
1)
tpON
tpOFF
typ
max.
—
85
—
—
50
75
ns
1)
—
55
80
ns
1)
TJ = 125°C
TJ = 125 °C
InH-Pulses shorter than the “minimum turn-on(off) input pulse width” are prolonged to 50ns (See Figure 7). InLInput doesn´t have this feature.
General Purpose Operational Amplifier OP
Parameter
Symbol
Limit Values
OP input offset voltage
∆VIN
–10
OP input offset voltage
drift
VDrift
—
±15
OP input high currents
(OP–, OP+)
IIN
—
0
min.
Final Datasheet
Unit
typ
max.
0
10
15
—
0.2
Test Condition
mV
µV/K
µA
VIN = 2 V
September 2007
High and Low Side Driver
2ED020I12-FI
Final Data
Electrical Parameters
General Purpose Operational Amplifier OP (cont’d)
Parameter
Symbol
Limit Values
min.
typ
0
Unit
Test Condition
—
µA
VIN = 0 V
—
V
VOP– = 0 V
VOP+ = 2 V
max.
OP input low currents
(OP–, OP+)
IIN
– 0.2
OP high output voltage
VOPO
4.9
OP low output voltage
VOPO
—
—
0.1
V
VOP– = 2 V
VOP+ = 0 V
OP output source
current
IOPO
—
—
–5
mA
VOP+ = 2 V
VOP– = 0 V
VOPO = 0 V
OP output sink current
IOPO
VOP+ = 0 V
VOP– = 2 V
VOPO = 5 V
OP open loop gain
AOL
OP gain-bandwidth
product
OP phase margin 2)
—
5
—
—
mA
—
120
—
dB
A x BW
—
20
—
MHz
1)
Φ
—
70
—
°
1)
Unit
Test Condition
1)
Design value
2)
Due to inevitable parasitics a minimal gain of 3 is recommended
General Purpose Comparator CP
Parameter
Symbol
Limit Values
min.
typ
CP input offset voltage
∆VIN
CP input high current
ICP–
CP input low current
ICP+
CP low output voltage
VCPO
—
—
CP output leakage
current
ICPO
—
—
Final Datasheet
–45
—
–35
max.
–30
–15
mV
VCP+ = VCP-
20
35
µA
VCP– = 5V
µA
VCP+ = 0 V
0.2
V
VCP+ = 2 V
ICPO = 1 mA
5
µA
VCP+ = 0 V
VCP– = 2 V
VCPO = 5 V
–20
16
—
September 2007
High and Low Side Driver
2ED020I12-FI
Final Data
Electrical Parameters
General Purpose Comparator CP (cont’d)
Parameter
Symbol
Limit Values
min.
typ
Unit
Test Condition
max.
CP switch-on delay
td
—
100
—
ns
RCPO = 4.7kΩ
Vres = 5V
VCPO = 4V
CP switch-off delay
td
—
300
—
ns
RCPO = 4.7kΩ
Vres = 5V
VCPO = 1V
Final Datasheet
17
September 2007
Final Data
High and Low Side Driver
2ED020I12-FI
Package Outline
6
Package Outline
Note: dimensions are given in mm.
6.1
Soldering Profile
The soldering profile qualified for 2ED020I12-FI (according to the standard IPC/JEDEC
J-STD-020C) is moisture sensitivity level 3. The peak reflow temperature for its package
(volume < 350 mm3) is 260 +0/-5 °C.
Final Datasheet
18
September 2007
High and Low Side Driver
2ED020I12-FI
Final Data
Diagrams
7
Diagrams
InH/L
2V
0.8V
tr
tOFF
80%
80%
OutH/L
20%
20%
tf
tON
Figure 4 Switching Time Waveform Definition
/SD
0.8V
tSD
80%
OutH/L
Figure 5 Shutdown Waveform Definition
Final Datasheet
19
September 2007
High and Low Side Driver
2ED020I12-FI
Final Data
Diagrams
InL
2V
2V
0.8V
0.8V
InH
OutL
80%
80%
20%
20%
OutH
tOFFH
tOFFL
tONH
tONL
∆t = max (|tONH - tOFFL| , |tOFFH - tONL|)
Figure 6 Delay Matching Waveform Definitions
InH
OutH
50ns
50ns
Figure 7 Short InH-Pulses Prolongation
Final Datasheet
20
September 2007
Final Data
High and Low Side Driver
2ED020I12-FI
Application Advices
8
Application Advices
8.1
Operational Amplifier
To minimize the current consumption when the operational amplifier is not used, it is
necessary to connect both inputs properly, e.g connect OP+ to 5V and OP- to 0V or vice
versa.
On the other hand, the operational amplifier cannot operate with a follower configuration
, i.e OP- = OPO. A minimum gain of 3 has to be used so that its output OPO has a stable
behaviour.
8.2
Power Supply
a) The connection of a capacitor (>10nF) as close as possible to the supply pins VSH,
VSL is recommended for avoiding that possible oscillations in the supply voltage can
cause erroneous operation of the output driver stage. Total value of capacitance
connected to the supply terminals has to be determined by taking into account
gatecharge, peak current, supply voltage and kind of power supply.
b) If a bootstrap power supply for the high side driver is applied, a resistor of 10Ω
minimum in series with the bootstrap diode is recommended.
Final Datasheet
21
September 2007
Total Quality Management
Qualität hat für uns eine umfassende
Bedeutung. Wir wollen allen Ihren
Ansprüchen in der bestmöglichen
Weise gerecht werden. Es geht uns also
nicht nur um die Produktqualität –
unsere Anstrengungen gelten
gleichermaßen der Lieferqualität und
Logistik, dem Service und Support
sowie allen sonstigen Beratungs- und
Betreuungsleistungen.
Quality takes on an all encompassing
significance at Infineon AG. For us it
means living up to each and every one
of your demands in the best possible
way. So we are not only concerned with
product quality. We direct our efforts
equally at quality of supply and logistics,
service and support, as well as all the
other ways in which we advise and
attend to you.
Dazu gehört eine bestimmte
Geisteshaltung unserer Mitarbeiter.
Total Quality im Denken und Handeln
gegenüber Kollegen, Lieferanten und
Ihnen, unserem Kunden. Unsere
Leitlinie ist jede Aufgabe mit „Null
Fehlern“ zu lösen – in offener
Sichtweise auch über den eigenen
Arbeitsplatz hinaus – und uns ständig
zu verbessern.
Part of this is the very special attitude of
our staff. Total Quality in thought and
deed, towards co-workers, suppliers
and you, our customer. Our guideline is
“do everything with zero defects”, in an
open manner that is demonstrated
beyond your immediate workplace, and
to constantly improve.
Unternehmensweit orientieren wir uns
dabei auch an „top“ (Time Optimized
Processes), um Ihnen durch größere
Schnelligkeit den entscheidenden
Wettbewerbsvorsprung zu verschaffen.
Geben Sie uns die Chance, hohe
Leistung durch umfassende Qualität zu
beweisen.
Wir werden Sie überzeugen.
http://www.infineon.com
Published by Infineon Technologies AG
Throughout the corporation we also
think in terms of Time Optimized
Processes (top), greater speed on our
part to give you that decisive
competitive edge.
Give us the chance to prove the best of
performance through the best of quality
– you will be convinced.
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