Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching Unit: mm 5.0±0.1 ■ Features ● ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 900 V VCES 900 V VCEO 800 V Emitter to base voltage VEBO 7 V Peak collector current ICP 2 A Collector current IC 1 A Base current IB 0.3 A Collector to emitter voltage Collector power TC=25°C dissipation Ta=25°C 15 PC Junction temperature Tj Storage temperature Tstg 90° 0.35±0.1 1.2±0.1 C1.0 2.25±0.2 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 1 2 3 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package W 2 ■ Electrical Characteristics 1.0 2.5±0.2 ● 13.0±0.2 4.2±0.2 ● High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping 18.0±0.5 Solder Dip ● 10.0±0.2 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 7V, IC = 0 Collector to emitter voltage VCEO IC = 1mA, IB = 0 min typ VCB = 900V, IE = 0 max Unit 50 µA 50 µA 800 V hFE1 VCE = 5V, IC = 0.05A 6 hFE2 VCE = 5V, IC = 0.5A 3 Collector to emitter saturation voltage VCE(sat) IC = 0.2A, IB = 0.04A 1.5 V Base to emitter saturation voltage VBE(sat) IC = 0.2A, IB = 0.04A 1 V Transition frequency fT VCE = 10V, IC = 0.05A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A, VCC = 250V 4 MHz 1 µs 3 µs 1 µs 1 Power Transistors 2SC4892 PC — Ta IC — VCE VCE(sat) — IC TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2.0W) (1) 15 Collector to emitter saturation voltage VCE(sat) (V) 1.2 IB=200mA 1.0 Collector current IC (A) Collector power dissipation PC (W) 20 10 5 0.8 100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 0.6 0.4 20mA 0.2 10mA (2) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 3 25˚C 1 0.3 –25˚C 0.1 0.03 0.01 0.01 Collector to emitter voltage VCE (V) VBE(sat) — IC TC=100˚C IC/IB=5 0.03 0.1 0.3 1 Collector current IC (A) hFE — IC fT — IC IC/IB=5 25˚C TC=–25˚C 1 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 25˚C 30 TC=100˚C 10 –25˚C 3 1 0.3 Collector current IC (A) ton, tstg, tf — IC 0.3 1 3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=250V TC=25˚C 10 tstg 1 0.3 ton tf 0.1 Non repetitive pulse TC=25˚C 3 3 ICP IC 1 t=1ms 0.3 10ms 0.1 DC 0.03 0.01 0.003 0.03 0.001 0.01 0 0.2 0.4 0.6 0.8 Collector current IC (A) 1.0 100 30 10 3 1 1 3 10 30 100 300 0.1 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) Area of safe operation (ASO) Collector current IC (A) Switching time ton,tstg,tf (µs) 0.1 10 30 2 0.03 Collector current IC (A) 100 300 0.3 0.1 0.01 1 VCE=10V f=1MHz TC=25˚C VCE=5V 100 Transition frequency fT (MHz) 3 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 1000 1000 Collector to emitter voltage VCE (V) 1 Power Transistors 2SC4892 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3