Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
BAW101S
High voltage double diode
Product data sheet
2003 May 13
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
FEATURES
PINNING
• Small plastic SMD package
PIN
DESCRIPTION
• High switching speed: max. 50 ns
1
anode 1
• High continuous reverse voltage: 300 V
2
n.c.
• Electrically insulated diodes.
3
cathode 2
4
anode 2
APPLICATIONS
5
n.c.
• High voltage switching
6
cathode 1
• Automotive
• Communication.
DESCRIPTION
handbook, halfpage
The BAW101S is a high-speed switching diode array with
two separate dice, fabricated in planar technology and
encapsulated in a small SOT363 plastic SMD package.
6
5
4
1
2
3
6
5
4
1
2
3
MARKING
TYPE NUMBER
BAW101S
MARKING CODE(1)
Top view
K2∗
MBL892
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
Fig.1
∗ = W: Made in China.
2003 May 13
2
Simplified outline (SOT363) and symbol.
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
VRRM
repetitive peak reverse voltage
−
300
V
−
600
V
−
300
V
series connection
−
600
V
single diode loaded; note 1; see Fig.2
−
250
mA
double diode loaded; note 1; see Fig.2
−
140
mA
−
625
mA
series connection
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward
current
square wave; Tj = 25 °C prior to surge;
t = 1 µs
−
4.5
A
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
350
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VBR(R)
reverse breakdown voltage
IR = 100 µA
300
−
V
VF
forward voltage
IF = 100 mA; note 1
−
1.1
V
IR
reverse current
VR = 250 V
−
150
nA
VR = 250 V; Tamb = 150 °C
−
50
µA
50
ns
2
pF
trr
reverse recovery time
when switched from IF = 30 mA to IR = 30 mA; −
RL = 100 Ω; measured at IR = 3 mA
Cd
diode capacitance
VR = 0 V; f = 1 MHz
Note
1. Pulse test: pulse width = 300 µs; δ = 0.02.
2003 May 13
3
−
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
note 1
255
K/W
Rth j-a
thermal resistance from junction to ambient
note 2
357
K/W
Notes
1. One or more diodes loaded.
2. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.
GRAPHICAL DATA
MLE057
300
MBG384
600
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
200
(2)
100
0
50
(1) Single diode loaded.
100
200
150
Tamb (°C)
1
VF (V)
2
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Maximum permissible continuous forward
current as a function of ambient
temperature.
2003 May 13
0
(2) Double diode loaded.
Device mounted on an FR4 printed-circuit board.
Cathode-lead mounting pad = 1 cm2.
Fig.2
(3)
200
0
0
(2)
400
(1)
Fig.3
4
Forward current as a function of forward
voltage.
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
MBG703
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
102
10
103
104
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MLE058
102
handbook, halfpage
IR
(µA)
Cd
(pF)
10
0.5
(1)
(2)
1
0.4
10−1
0.3
10−2
MLE059
0.6
handbook, halfpage
0
50
100
150
Tj (°C)
0.2
200
0
2
(1) VR = VRMAX: maximum values.
(2) VR = VRMAX: typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
2003 May 13
5
4
6
8
VR (V)
10
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
MLE060
400
handbook, halfpage
VR
(V)
300
200
100
0
0
Fig.7
50
100
150
200
Tamb (°C)
Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
2003 May 13
6
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2003 May 13
REFERENCES
IEC
JEDEC
EIAJ
SC-88
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
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consequences of use of such information.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2003 May 13
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/01/pp9
Date of release: 2003 May 13
Document order number: 9397 750 11148
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