Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS19; BAS20; BAS21
General purpose diodes
Product data sheet
Supersedes data of 1999 May 26
2003 Mar 20
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
FEATURES
PINNING
• Small plastic SMD package
PIN
• Switching speed: max. 50 ns
1
anode
• General application
2
not connected
• Continuous reverse voltage: max. 100 V; 150 V; 200 V
3
cathode
DESCRIPTION
• Repetitive peak reverse voltage: max. 120 V; 200 V;
250 V
• Repetitive peak forward current: max. 625 mA.
APPLICATIONS
• General purpose switching in e.g. surface mounted
circuits.
handbook, halfpage
2
1
2
n.c.
DESCRIPTION
The BAS19, BAS20 and BAS21 are general purpose
diodes fabricated in planar technology, and encapsulated
in a small SOT23 plastic SMD package.
1
3
3
MAM185
MARKING
TYPE NUMBER
MARKING CODE (1)
BAS19
JP∗
BAS20
JR∗
BAS21
JS∗
Fig.1 Simplified outline (SOT23) and symbol.
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
2003 Mar 20
2
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VRRM
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
repetitive peak reverse voltage
BAS19
−
120
V
BAS20
−
200
V
BAS21
−
250
V
BAS19
−
100
V
BAS20
−
150
V
BAS21
−
200
V
−
200
mA
−
625
mA
t = 1 µs
−
9
A
t = 100 µs
−
3
A
t = 10 ms
−
1.7
A
−
250
mW
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
3
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
BAS19
BAS20
BAS21
CONDITIONS
MAX.
UNIT
see Fig.3
IF = 100 mA
1
V
IF = 200 mA
1.25
V
VR = 100 V
100
nA
VR = 100 V; Tj = 150 °C
100
µA
VR = 150 V
100
nA
VR = 150 V; Tj = 150 °C
100
µA
VR = 200 V
100
nA
VR = 200 V; Tj = 150 °C
see Fig.5
100
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
5
pF
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured at
IR = 3 mA; see Fig.8
50
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
4
VALUE
UNIT
330
K/W
500
K/W
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
GRAPHICAL DATA
MBG442
300
MBG384
600
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
200
400
100
200
(1)
0
0
0
100
Tamb (oC)
200
1
(3)
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0
(2)
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG703
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Mar 20
5
104
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
MBG381
2
10halfpage
handbook,
Cd
(pF)
IR
(µA)
0.8
10
(1)
1
(2)
0.6
1
10
MBG447
1.0
handbook, halfpage
0.4
10 2
100
0
Tj (oC)
0.2
0
200
2
(1) VR = VRmax; maximum values.
(2) VR = VRmax; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
MBG445
300
handbook, halfpage
VR
(V)
(1)
200
(2)
(3)
100
0
0
100
Tamb (oC)
200
(1) BAS21.
(2) BAS20.
(3) BAS19.
Fig.7
Maximum permissible continuous reverse
voltage as a function of the ambient
temperature.
2003 Mar 20
6
4
6
VR (V)
8
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
handbook, full pagewidth
tr
tp
t
D.U.T.
RS = 50 Ω
V = VR I F x R S
IF
10%
IF
SAMPLING
OSCILLOSCOPE
t
R i = 50 Ω
MGA881
(1)
90%
VR
input signal
(1) IR = 3 mA.
Fig.8 Reverse recovery voltage test circuit and waveforms.
2003 Mar 20
t rr
7
output signal
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2003 Mar 20
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
8
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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http://www.nxp.com/profile/terms, including those
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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NXP Semiconductors makes no representation or
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specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2003 Mar 20
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/04/pp10
Date of release: 2003 Mar 20
Document order number: 9397 750 10961
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