English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
EasyBRIDGE模块采用CoolMOS带有pressfit压接管脚和温度检测NTC
EasyBRIDGEmodulewithCoolMOSandPressFIT/NTC
初步数据/PreliminaryData
J
VCES = 650V
IC nom = 75A / ICRM = 150A
典型应用
• 太阳能应用
TypicalApplications
• SolarApplications
电气特性
• 增加阻断电压至650V
• 低VCEsat
ElectricalFeatures
• Increasedblockingvoltagecapabilityto650V
• LowVCEsat
机械特性
• 低热阻的三氧化二铝(Al2O3衬底
• 集成NTC温度传感器
• PressFIT压接技术
MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• IntegratedNTCtemperaturesensor
• PressFITContactTechnology
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:MB
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
集电极电流
Implementedcollectorcurrent
VCES
650
V
ICN
75
A
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
37,5
75
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
150
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
250
W
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 37,5 A, VGE = 15 V
IC = 37,5 A, VGE = 15 V
IC = 37,5 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
A
A
typ.
max.
1,35
1,40
1,40
1,55
V
V
V
5,80
6,50
V
栅极阈值电压
Gatethresholdvoltage
IC = 1,20 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
0,80
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
4,70
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,14
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 37,5 A, VCE = 400 V
VGE = ±15 V
RGon = 8,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 37,5 A, VCE = 400 V
VGE = ±15 V
RGon = 8,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 37,5 A, VCE = 400 V
VGE = ±15 V
RGoff = 8,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 37,5 A, VCE = 400 V
VGE = ±15 V
RGoff = 8,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 37,5 A, VCE = 400 V, LS = 20 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 1900 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 8,2 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
4,90
0,027
0,027
0,027
µs
µs
µs
0,016
0,017
0,018
µs
µs
µs
0,23
0,27
0,28
µs
µs
µs
0,01
0,02
0,02
µs
µs
µs
Eon
1,10
1,45
1,50
mJ
mJ
mJ
IC = 37,5 A, VCE = 400 V, LS = 20 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 8,2 Ω
Tvj = 150°C
Eoff
0,65
1,05
1,15
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 400 V
VCEmax = VCES -LsCE ·di/dt
ISC
430
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
preparedby:MB
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
tP ≤ 5 µs, Tvj = 150°C
td on
tr
td off
tf
RthJC
2
0,55
0,60 K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
初步数据
PreliminaryData
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
0,75
Tvj op
-40
K/W
150
°C
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM 650
V
正向电流
Implementedforwardcurrent
IFN
50
A
连续正向直流电流
ContinuousDCforwardcurrent
IF
37,5
A
IFRM
100
A
I²t
370
330
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
特征值/CharacteristicValues
min.
A²s
A²s
typ.
max.
1,70
VF
1,45
1,35
1,30
IF = 37,5 A, - diF/dt = 1900 A/µs (Tvj=150°C) Tvj = 25°C
VR = 400 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
IRM
49,0
59,0
63,0
A
A
A
恢复电荷
Recoveredcharge
IF = 37,5 A, - diF/dt = 1900 A/µs (Tvj=150°C) Tvj = 25°C
VR = 400 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Qr
1,90
3,60
4,00
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 37,5 A, - diF/dt = 1900 A/µs (Tvj=150°C) Tvj = 25°C
VR = 400 V
Tvj = 125°C
VGE = -15 V
Tvj = 150°C
Erec
0,50
1,00
1,20
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,00
1,10 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,25
K/W
正向电压
Forwardvoltage
IF = 37,5 A, VGE = 0 V
IF = 37,5 A, VGE = 0 V
IF = 37,5 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:MB
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
3
-40
150
V
V
V
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
初步数据
PreliminaryData
旁路二极管/Bypass-Diode
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM 800
V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip
TC = 80°C
IFRMSM 50
A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput
TC = 80°C
IRMSM 75
A
正向浪涌电流
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
IFSM
800
640
A
A
I2t-值
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
I²t
3200
2050
A²s
A²s
特征值/CharacteristicValues
min.
typ.
max.
正向电压
Forwardvoltage
Tvj = 150°C, IF = 50 A
VF
0,90
V
反向电流
Reversecurrent
Tvj = 150°C, VR = 800 V
IR
0,20
mA
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,45
0,55 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,45
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
°C
Diode,轉換器/Diode,Boost
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VRRM 650
V
IF
24
A
IFRM
48
A
I²t
72,0
A²s
特征值/CharacteristicValues
min.
typ.
max.
1,50
1,65
1,85
正向电压
Forwardvoltage
IF = 24 A, VGE = 0 V
IF = 24 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 24 A, - diF/dt = 1500 A/µs (Tvj=125°C)
VR = 400 V
Tvj = 25°C
Tvj = 125°C
IRM
12,5
12,5
A
A
恢复电荷
Recoveredcharge
IF = 24 A, - diF/dt = 1500 A/µs (Tvj=125°C)
VR = 400 V
Tvj = 25°C
Tvj = 125°C
Qr
0,30
0,30
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 24 A, - diF/dt = 1500 A/µs (Tvj=125°C)
VR = 400 V
Tvj = 25°C
Tvj = 125°C
Erec
0,03
0,03
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,90
1,00 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,95
K/W
在开关状态下温度
Temperatureunderswitchingconditions
VF
Tvj op
preparedby:MB
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
4
-40
125
V
V
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
初步数据
PreliminaryData
MOSFET/MOSFET
最大额定值/MaximumRatedValues
漏源击穿电压
Drain-sourcebreakdownvoltage
直流漏极电流
DCdraincurrent
脉冲漏极电流,tp由Tjmax限定
Pulseddraincurrent,tplimitedbyTjmax
总耗散功率
Totalpowerdissipation
栅源峰值电压
Gate-sourcepeakvoltage
Tvj = 25°C
VDSS
650
V
TC = 100°C
TC = 25°C
ID nom
ID
30
50
ID puls 100
A
Ptot
520
W
VGSS
+/-20
V
TC = 25°C
特征值/CharacteristicValues
漏源通态电阻
Drain-sourceonresistance
栅极阈值电压
Gatethresholdvoltage
栅极电荷
Gatecharge
内部栅极电阻
Internalgateresistor
输入电容
Inputcapacitance
输出电容
Outputcapacitance
反向传输电容
Reversetransfercapacitance
零栅电压漏极电流
Zerogatevoltagedraincurrent
栅极漏电流
Gate-sourceleakagecurrent
开通延迟时间(电感负载)
Turnondelaytime,inductiveload
上升时间(电感负载)
Risetime,inductiveload
关断延迟时间(电感负载)
Turnoffdelaytime,inductiveload
下降时间(电感负载)
Falltime,inductiveload
开通损耗(每脉冲)
Turn-onenergylossperpulse
关断损耗(每脉冲)
Turn-offenergylossperpulse
结-外壳热阻
Thermalresistance,junctiontocase
外壳-散热器热阻
Thermalresistance,casetoheatsink
min.
ID = 30 A, VGS = 10 V, Tvj = 25°C
RDS on
ID = 3,30 mA, VDS = VGS, Tvj = 25°C
VGS(th)
2,50
A
A
typ.
max.
38,0
42,0
mΩ
3,00
3,50
V
VGS = 10 V, VDD= 480 V
QG
0,33
µC
Tvj = 25°C
RGint
0,7
Ω
f = 1 MHz, Tvj = 25°C, VDS = 25 V, VGS = 0 V
Ciss
8,00
nF
f = 1 MHz, Tvj = 25°C, VDS = 25 V, VGS = 0 V
Coss
7,50
nF
f = 1 MHz, Tvj = 25°C, VDS = 25 V, VGS = 0 V
Crss
0,80
nF
VDS = 650 V, VGS = 0 V, Tvj = 25°C
IDSS
2,00
µA
VDS = 0 V, VGS = 20 V, Tvj = 25°C
IGSS
100
nA
ID = 30 A, VDS = 400 V
VGS = 10 V
RG = 7,50 Ω
ID = 30 A, VDS = 400 V
VGS = 10 V
RG = 7,50 Ω
ID = 30 A, VDS = 400 V
VGS = 10 V
RG = 7,50 Ω
ID = 30 A, VDS = 400 V
VGS = 10 V
RG = 7,50 Ω
ID = 30 A, VDS = 400 V, Lσ = 25 nH
VGS = 10 V, di/dt = 1600 A/µs (Tvj = 150)
RG = 7,50 Ω
ID = 30 A, VDS = 400 V, Lσ = 25 nH
VGS = 10 V, du/dt = 19500 V/µs (Tvj = 150)
RG = 7,50 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
pro MOS-FET / per MOS-FET
λPaste = 1 W/(m*K) /λgrease = 1 W/(m*K)
在开关状态下温度
Temperatureunderswitchingconditions
20,0
17,5
16,0
15,0
15,5
16,0
210
220
220
7,50
9,00
9,00
0,32
0,36
0,37
0,08
0,09
0,095
td on
tr
td off
tf
Eon
Eoff
preparedby:MB
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
5
ns
mJ
mJ
0,40 K/W
RthCH
0,40
K/W
-40
min.
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
ns
0,35
Revers-Diode/reverse-diode
IS = 50 A, VGS = 0 V
IS = 50 A, VGS = 0 V
IS = 50 A, VGS = 0 V
ns
RthJC
Tvj op
正向电压
Forwardvoltage
ns
VSD
150
typ.
0,85
0,70
°C
max.
1,30
V
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
初步数据
PreliminaryData
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
min.
typ.
max.
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
R25
5,00
∆R/R
-5
P25
kΩ
5
%
20,0
mW
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
11,5
6,3
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
10,0
5,0
mm
相对电痕指数
Comperativetrackingindex
VISOL CTI
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
nH
RCC'+EE'
3,00
mΩ
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
40
重量
Weight
G
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
6
max.
17
-40
preparedby:MB
typ.
LsCE
Tstg
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25 A rms per connector pin.
> 200
min.
杂散电感,模块
Strayinductancemodule
kV
2,5
39
125
°C
80
N
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
75
75
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
70
65
60
60
55
55
50
50
45
45
40
40
IC [A]
IC [A]
65
35
35
30
30
25
25
20
20
15
15
10
10
5
5
0
0,0
0,2
0,4
0,6
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
70
0,8
1,0 1,2
VCE [V]
1,4
1,6
1,8
0
2,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
VCE [V]
2,0
2,5
3,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=8.2Ω,RGoff=8.2Ω,VCE=400V
75
4,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
70
65
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
3,5
60
3,0
55
50
2,5
40
E [mJ]
IC [A]
45
35
30
2,0
1,5
25
20
1,0
15
10
0,5
5
0
5
6
7
8
9
0,0
10
VGE [V]
preparedby:MB
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
7
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70 75
IC [A]
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=37.5A,VCE=400V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
9,0
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
8,0
ZthJH : IGBT
7,0
1
ZthJH [K/W]
E [mJ]
6,0
5,0
4,0
3,0
0,1
2,0
i:
1
2
3
4
ri[K/W]: 0,0255 0,1235 0,257 0,894
τi[s]:
0,0005 0,005 0,05 0,2
1,0
0,0
0
10
20
30
40
RG [Ω]
50
60
70
0,01
0,001
80
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=8,2Ω,Tvj=150°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
90
75
IC, Modul
IC, Chip
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
70
65
75
60
55
60
50
IF [A]
IC [A]
45
45
40
35
30
30
25
20
15
15
10
5
0
0
100
200
300
400
VCE [V]
500
600
0
700
preparedby:MB
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
8
0,0
0,2
0,4
0,6
0,8
1,0 1,2
VF [V]
1,4
1,6
1,8
2,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=8.2Ω,VCE=400V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=37.5A,VCE=400V
2,0
1,6
Erec, Tvj = 125°C
Erec, Tvj = 150°C
1,8
Erec, Tvj = 125°C
Erec, Tvj = 150°C
1,4
1,6
1,2
1,4
1,0
E [mJ]
E [mJ]
1,2
1,0
0,8
0,8
0,6
0,6
0,4
0,4
0,2
0,2
0,0
0
0,0
5 10 15 20 25 30 35 40 45 50 55 60 65 70 75
IF [A]
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
0
10
20
30
40
RG [Ω]
50
60
70
80
正向偏压特性旁路二极管(典型)
forwardcharacteristicofBypass-Diode(typical)
IF=f(VF)
10
100
ZthJH : Diode
Tvj = 25 °C
Tvj = 150 °C
90
80
60
IF [A]
ZthJH [K/W]
70
1
50
40
30
20
i:
1
2
3
4
ri[K/W]: 0,17
0,37 0,72 0,99
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
10
0
10
preparedby:MB
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
9
0,0
0,2
0,4
0,6
VF [V]
0,8
1,0
1,2
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
初步数据
PreliminaryData
正向偏压特性Diode,轉換器(典型)
forwardcharacteristicofDiode,Boost(typical)
IF=f(VF)
开关损耗Diode,轉換器(典型)
switchinglossesDiode,Boost(typical)
Erec=f(IF)
RGon=8.2Ω,VCE=400V
48
0,0375
Tvj = 25 °C
Tvj = 125 °C
44
Erec, Tvj = 125°C
40
36
32
0,0250
E [mJ]
IF [A]
28
24
20
16
0,0125
12
8
4
0
0,0
0,4
0,8
1,2
VF [V]
1,6
2,0
2,4
开关损耗Diode,轉換器(典型)
switchinglossesDiode,Boost(typical)
Erec=f(RG)
IF=24A,VCE=400V
0,0000
0
6
12
18
24
IF [A]
30
36
42
48
瞬态热阻抗Diode,轉換器
transientthermalimpedanceDiode,Boost
ZthJH=f(t)
0,0375
10
Erec, Tvj = 125°C
ZthJH : Diode
1
E [mJ]
ZthJH [K/W]
0,0250
0,0125
0,1
i:
1
2
3
4
ri[K/W]: 0,15
0,45 0,75 0,5
τi[s]:
0,0005 0,005 0,05 0,2
0,0000
0,0
0,01
0,001
7,5 15,0 22,5 30,0 37,5 45,0 52,5 60,0 67,5 75,0
RG [Ω]
preparedby:MB
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
10
0,01
0,1
t [s]
1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
初步数据
PreliminaryData
瞬态热阻抗MOSFET
transientthermalimpedanceMOSFET
ZthJH=f(t)
输出特性MOSFET(典型)
outputcharacteristicMOSFET(typical)
ID=f(VDS)
Tvj=150°C
1
100
ZthJH: Mosfet
VGS = 20 V
VGS = 10 V
VGS = 8 V
VGS = 6 V
VGS = 5 V
VGS = 4 V
90
80
70
ID [A]
ZthJH [K/W]
60
0,1
50
40
30
20
i:
1
2
3
4
ri[K/W]: 0,06
0,0225 0,06 0,6075
τi[s]:
0,0005 0,005 0,01 0,2
0,01
0,001
0,01
0,1
t [s]
1
10
0
10
传输特性MOSFET(典型)
transfercharacteristicMOSFET(typical)
ID=f(VGS)
VDS=10V
0
1
2
3
4
5
6
VDS [V]
7
8
9
10
48
54
60
开关损耗MOSFET(典型)
switchinglossesMOSFET(typical)
Eon=f(IC),Eoff=f(IC)
VGS=±15V,RGon=7,5Ω,RGoff=7,5Ω,VDS=400V
160
1,50
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
150
140
Eon, Tvj = 125°C
Eoff, Tvj = 150°C
Eon, Tvj = 125°C
Eoff, Tvj = 150°C
1,35
130
1,20
120
1,05
110
100
0,90
E [mJ]
ID [A]
90
80
70
0,75
0,60
60
50
0,45
40
0,30
30
20
0,15
10
0
0
1
2
3
4
5
6
VGS [V]
7
8
9
0,00
10
preparedby:MB
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
11
0
6
12
18
24
30 36
IC [A]
42
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
初步数据
PreliminaryData
开关损耗MOSFET(典型)
switchinglossesMOSFET(typical)
Eon=f(RG),Eoff=f(RG)
VGS=±15V,ID=37.5A,VDS=400V
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
3,0
100000
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150C
Eoff, Tvj = 150C
2,7
2,4
Rtyp
2,1
10000
R[Ω]
E [mJ]
1,8
1,5
1,2
1000
0,9
0,6
0,3
0,0
0,0
100
7,5 15,0 22,5 30,0 37,5 45,0 52,5 60,0 67,5 75,0
RG [Ω]
preparedby:MB
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
12
0
20
40
60
80
100
TC [°C]
120
140
160
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
初步数据
PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
Infineon
preparedby:MB
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
13
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
F4-75R07W2H3_B51
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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preparedby:MB
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
14
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