English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
EasyPACK模块带有pressfit压接管脚和温度检测NTC
EasyPACKmoduleandPressFIT/NTC
初步数据/PreliminaryData
J
VCES = 650V
IC nom = 50A / ICRM = 100A
典型应用
• 三电平应用
• 电机传动
• 太阳能应用
• UPS系统
TypicalApplications
• 3-Level-Applications
• MotorDrives
• SolarApplications
• UPSSystems
电气特性
• 高速IGBTH3
ElectricalFeatures
• HighSpeedIGBTH3
机械特性
• 低热阻的三氧化二铝(Al2O3衬底
• 紧凑型设计
• PressFIT压接技术
• 集成的安装夹使安装坚固
MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• Compactdesign
• PressFITContactTechnology
• Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
650
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 95°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
50
75
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
100
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
215
W
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 50 A, VGE = 15 V
IC = 50 A, VGE = 15 V
IC = 50 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
A
A
typ.
max.
1,45
1,60
1,70
1,80
V
V
V
5,80
6,45
V
栅极阈值电压
Gatethresholdvoltage
IC = 0,80 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
0,50
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
3,10
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,095
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGon = 16 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGon = 16 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGoff = 16 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGoff = 16 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 50 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 1100 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 16 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
5,05
0,037
0,037
0,037
µs
µs
µs
0,042
0,044
0,047
µs
µs
µs
0,255
0,28
0,28
µs
µs
µs
0,058
0,064
0,066
µs
µs
µs
Eon
0,96
1,20
1,25
mJ
mJ
mJ
IC = 50 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3600 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 16 Ω
Tvj = 150°C
Eoff
1,20
1,60
1,70
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
330
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,65
0,70 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,75
K/W
在开关状态下温度
Temperatureunderswitchingconditions
tP ≤ 5 µs, Tvj = 150°C
td on
tr
td off
tf
Tvj op
preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
2
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 650
V
IF
30
A
IFRM
60
A
I²t
90,0
82,0
特征值/CharacteristicValues
min.
A²s
A²s
typ.
max.
2,00
VF
1,60
1,55
1,50
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
20,0
26,0
28,0
A
A
A
IF = 30 A, - diF/dt = 1100 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
1,20
2,10
2,50
µC
µC
µC
IF = 30 A, - diF/dt = 1100 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,22
0,45
0,53
mJ
mJ
mJ
正向电压
Forwardvoltage
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 30 A, - diF/dt = 1100 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
恢复电荷
Recoveredcharge
反向恢复损耗(每脉冲)
Reverserecoveryenergy
V
V
V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,25
1,35 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,35
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
3
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
初步数据
PreliminaryData
IGBT,三电平/IGBT,3-Level
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
650
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
30
50
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
60
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
135
W
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
A
A
typ.
max.
1,55
1,80
1,85
1,95
V
V
V
5,80
6,45
V
栅极阈值电压
Gatethresholdvoltage
IC = 0,80 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
0,30
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
1,65
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,051
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
ICES
0,02
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 30 A, VCE = 300 V
VGE = ±15 V
RGon = 20 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 30 A, VCE = 300 V
VGE = ±15 V
RGon = 20 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 30 A, VCE = 300 V
VGE = ±15 V
RGoff = 20 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 30 A, VCE = 300 V
VGE = ±15 V
RGoff = 20 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 30 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 700 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 20 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
5,05
0,045
0,045
0,045
µs
µs
µs
0,041
0,042
0,043
µs
µs
µs
0,175
0,19
0,20
µs
µs
µs
0,019
0,037
0,04
µs
µs
µs
Eon
0,66
0,79
0,83
mJ
mJ
mJ
IC = 30 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 5200 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 20 Ω
Tvj = 150°C
Eoff
0,42
0,63
0,69
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
160
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
1,05
1,10 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,10
K/W
在开关状态下温度
Temperatureunderswitchingconditions
tP ≤ 10 µs, Tvj = 150°C
td on
tr
td off
tf
Tvj op
preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
4
-40
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
初步数据
PreliminaryData
二极管,三电平/Diode,3-Level
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 650
V
IF
25
A
IFRM
50
A
I²t
50,0
48,0
特征值/CharacteristicValues
min.
A²s
A²s
typ.
max.
2,15
VF
1,65
1,60
1,55
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
12,5
16,5
17,5
A
A
A
IF = 25 A, - diF/dt = 700 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
0,80
1,40
1,55
µC
µC
µC
IF = 25 A, - diF/dt = 700 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,14
0,25
0,28
mJ
mJ
mJ
正向电压
Forwardvoltage
IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 25 A, - diF/dt = 700 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
恢复电荷
Recoveredcharge
反向恢复损耗(每脉冲)
Reverserecoveryenergy
V
V
V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,90
2,15 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,30
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
min.
typ.
max.
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
R25
∆R/R
5,00
-5
P25
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
5
kΩ
5
%
20,0
mW
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
11,5
6,3
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
10,0
5,0
mm
> 200
相对电痕指数
Comperativetrackingindex
VISOL CTI
min.
杂散电感,模块
Strayinductancemodule
LsCE
储存温度
Storagetemperature
Tstg
-40
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
40
重量
Weight
G
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25A rms per connector pin
preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
6
kV
2,5
typ.
max.
45
39
nH
125
°C
80
N
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
100
100
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0,0
0,4
0,8
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
90
IC [A]
IC [A]
90
1,2
1,6
VCE [V]
2,0
2,4
0
2,8
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
1,0
2,0
VCE [V]
3,0
4,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=16Ω,RGoff=16Ω,VCE=300V
100
4
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
90
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
80
3
70
E [mJ]
IC [A]
60
50
2
40
30
1
20
10
0
5
6
7
8
9
VGE [V]
10
11
0
12
preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
7
0
10
20
30
40
50 60
IC [A]
70
80
90
100
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=50A,VCE=300V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
10
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
9
8
ZthJH : IGBT
7
1
ZthJH [K/W]
E [mJ]
6
5
4
0,1
3
2
i:
1
2
3
4
ri[K/W]: 0,028 0,133 0,277 0,962
τi[s]:
0,0005 0,005 0,05 0,2
1
0
0
20
40
60
80
100
RG [Ω]
120
140
0,01
0,001
160
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
0,01
0,1
t [s]
1
10
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=16Ω,VCE=300V
60
0,8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
50
0,6
E [mJ]
IF [A]
40
30
0,4
20
0,2
10
0
0,0
0,2
0,4
0,6
0,8
1,0 1,2
VF [V]
1,4
1,6
1,8
0,0
2,0
preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
8
0
10
20
30
IF [A]
40
50
60
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=30A,VCE=300V
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
0,7
10
Erec, Tvj = 125°C
Erec, Tvj = 150°C
ZthJH : Diode
0,6
0,5
E [mJ]
ZthJH [K/W]
0,4
0,3
1
0,2
0,1
0,0
i:
1
2
3
4
ri[K/W]: 0,2
0,429 0,828 1,143
τi[s]:
0,0005 0,005 0,05 0,2
0
20
40
60
80
100
RG [Ω]
120
140
0,1
0,001
160
输出特性IGBT,三电平(典型)
outputcharacteristicIGBT,3-Level(typical)
IC=f(VCE)
VGE=15V
0,01
10
60
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
50
50
40
40
IC [A]
IC [A]
1
输出特性IGBT,三电平(典型)
outputcharacteristicIGBT,3-Level(typical)
IC=f(VCE)
Tvj=150°C
60
30
20
10
10
0,0
0,5
1,0
1,5
VCE [V]
2,0
2,5
0
3,0
preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
9
VGE = 19 V
VGE = 17 V
VGE = 15 V
VGE = 13 V
VGE = 11 V
VGE = 9 V
30
20
0
0,1
t [s]
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
初步数据
PreliminaryData
传输特性IGBT,三电平(典型)
transfercharacteristicIGBT,3-Level(typical)
IC=f(VGE)
VCE=20V
开关损耗IGBT,三电平(典型)
switchinglossesIGBT,3-Level(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=20Ω,RGoff=20Ω,VCE=300V
60
2,5
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
50
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
2,0
40
E [mJ]
IC [A]
1,5
30
1,0
20
0,5
10
0
5
6
7
8
9
10
0,0
11
0
10
20
VGE [V]
开关损耗IGBT,三电平(典型)
switchinglossesIGBT,3-Level(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=30A,VCE=300V
40
50
60
瞬态热阻抗IGBT,三电平
transientthermalimpedanceIGBT,3-Level
ZthJC=f(t)
7
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
6
ZthJC : IGBT
1
5
E [mJ]
ZthJC [K/W]
4
3
2
0,1
0,01
1
0
30
IC [A]
i:
1
2
3
4
ri[K/W]: 0,0423 0,2043 0,4249 1,4785
τi[s]:
0,0005 0,005 0,05
0,2
0
20
40
60
80
0,001
0,001
100 120 140 160 180 200
RG [Ω]
preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
10
0,01
0,1
t [s]
1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
初步数据
PreliminaryData
正向偏压特性二极管,三电平(典型)
forwardcharacteristicofDiode,3-Level(typical)
IF=f(VF)
开关损耗二极管,三电平(典型)
switchinglossesDiode,3-Level(typical)
Erec=f(IF)
RGon=20Ω,VCE=300V
50
0,400
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
45
Erec, Tvj = 125°C
Erec, Tvj = 150°C
0,350
40
0,300
35
0,250
E [mJ]
IF [A]
30
25
20
0,200
0,150
15
0,100
10
0,050
5
0
0,000
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
VF [V]
开关损耗二极管,三电平(典型)
switchinglossesDiode,3-Level(typical)
Erec=f(RG)
IF=25A,VCE=300V
0
5
10
15
20
25 30
IF [A]
35
40
45
50
瞬态热阻抗二极管,三电平
transientthermalimpedanceDiode,3-Level
ZthJH=f(t)
0,350
10
Erec, Tvj = 125°C
Erec, Tvj = 150°C
ZthJH : Diode
0,300
0,250
E [mJ]
ZthJH [K/W]
0,200
0,150
1
0,100
0,050
0,000
i:
1
2
3
4
ri[K/W]: 0,109 0,653 1,654 0,784
τi[s]:
0,0005 0,005 0,05 0,2
0
20
40
60
80
0,1
0,001
100 120 140 160 180 200
RG [Ω]
preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
11
0,01
0,1
t [s]
1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
初步数据
PreliminaryData
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
60
80
100
TC [°C]
120
140
160
preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
12
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
初步数据
PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
In fin e o n
preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
13
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FS3L50R07W2H3_B11
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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Terms&Conditionsofusage
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havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
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Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
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Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
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preparedby:CE
dateofpublication:2014-10-15
approvedby:AKDA
revision:2.0
14