Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAL99
High-speed diode
Product data sheet
Supersedes data of 1999 May 26
2003 Dec 12
NXP Semiconductors
Product data sheet
High-speed diode
BAL99
FEATURES
PINNING
• Small plastic SMD package
PIN
DESCRIPTION
• High switching speed: max. 4 ns
1
not connected
• Continuous reverse voltage: max. 70 V
2
cathode
• Repetitive peak reverse voltage: max. 70 V
3
anode
• Repetitive peak forward current: max. 500 mA.
APPLICATIONS
handbook, halfpage
2
1
• High-speed switching in e.g. surface mounted circuits.
1
n.c.
2
DESCRIPTION
3
The BAL99 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the small SOT23
plastic SMD package.
3
Marking code:
JFp = made in Hong Kong;
Fig.1
MAM231
JFt = made in Malaysia;
JFW = made in China.
Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
−
BAL99
DESCRIPTION
VERSION
plastic surface mounted package; 3 leads
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VRRM
repetitive peak reverse voltage
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
CONDITIONS
MIN.
MAX.
UNIT
−
70
V
−
70
V
−
215
mA
−
500
mA
tp = 1 µs
−
4
A
tp = 1 ms
−
1
A
tp = 1 s
−
0.5
A
−
250
mW
see Fig.2; note 1
square wave; Tj = 25 °C prior to surge;
see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 12
2
NXP Semiconductors
Product data sheet
High-speed diode
BAL99
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
CONDITIONS
MAX.
UNIT
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF = 50 mA
1
V
IF = 150 mA
1.25
V
VR = 25 V
30
nA
VR = 70 V
1
µA
VR = 25 V; Tj = 150 °C
30
µA
see Fig.3
see Fig.5
VR = 70 V; Tj = 150 °C;
50
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA;
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-tp)
thermal resistance from junction to tie-point
Rth(j-a)
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 12
3
VALUE
UNIT
360
K/W
500
K/W
NXP Semiconductors
Product data sheet
High-speed diode
BAL99
GRAPHICAL DATA
MLB755
300
MBG382
300
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
200
200
100
100
0
0
0
100
T amb ( oC)
200
0
(2)
1
Device mounted on an FR4 printed-circuit board.
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.2
Fig.3
Maximum permissible continuous forward
current as a function of ambient temperature.
(3)
2
VF (V)
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Dec 12
4
104
NXP Semiconductors
Product data sheet
High-speed diode
BAL99
mbh182
105
IR
(nA)
Cd
(pF)
104
0.6
(1)
103
(2)
(3)
0.4
102
10
MBG446
0.8
handbook, halfpage
0.2
100
0
0
Tj (°C)
0
200
4
(1) VR = 70 V; maximum values.
(2) VR = 70 V; typical values.
(3) VR = 25 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
2003 Dec 12
5
8
12
VR (V)
16
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
High-speed diode
BAL99
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery time test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
2003 Dec 12
6
t
tp
output
signal
NXP Semiconductors
Product data sheet
High-speed diode
BAL99
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2003 Dec 12
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
7
NXP Semiconductors
Product data sheet
High-speed diode
BAL99
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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http://www.nxp.com/profile/terms, including those
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reserves the right to make changes to information
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specifications and product descriptions, at any time and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Dec 12
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/04/pp
Date of release: 2003 Dec 12
Document order number: 9397 750 12389
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