BAS56 High-speed double diode Rev. 3 — 29 June 2010 Product data sheet 1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected. 1.2 Features and benefits High switching speed: trr ≤ 6 ns Reverse voltage: VR ≤ 60 V Repetitive peak reverse voltage: VRRM ≤ 60 V Repetitive peak forward current: IFRM ≤ 600 mA AEC-Q101 qualified Small SMD plastic package 1.3 Applications High-speed switching in e.g. surface-mounted circuits 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter IF forward current IR reverse current VR reverse voltage trr [1] Conditions Min [1][2] VR = 60 V reverse recovery time [3] Typ Max Unit - - 200 mA - - 100 nA - - 60 V - - 6 ns Single diode loaded. [2] Device mounted on an FR4 Printed-Circuit Board (PCB). [3] When switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA. BAS56 NXP Semiconductors High-speed double diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 cathode (diode 1) 2 cathode (diode 2) 3 anode (diode 2) 4 anode (diode 1) 4 1 3 Graphic symbol 4 3 2 1 2 006aab100 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS56 - plastic surface-mounted package; 4 leads SOT143B Table 4. Marking codes 4. Marking Type number Marking code[1] BAS56 *L5 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BAS56 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 June 2010 © NXP B.V. 2010. All rights reserved. 2 of 12 BAS56 NXP Semiconductors High-speed double diode 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 60 V - 120 V - 60 V [1] - 120 V [2][3] - 200 mA [2][4] - 150 mA repetitive peak forward current [3] - 600 mA [4] - 430 mA non-repetitive peak forward current [5] [1] reverse voltage VR forward current IF IFRM IFSM square wave tp = 1 μs - 9 A tp = 100 μs - 3 A - 1.7 A - 250 mW tp = 10 ms Tamb = 25 °C [2] Ptot total power dissipation Tj junction temperature - 150 °C Tstg storage temperature −65 +150 °C [1] Series connection. [2] Device mounted on an FR4 PCB. [3] Single diode loaded. [4] Double diode loaded. [5] Tj = 25 °C prior to surge. 6. Thermal characteristics Table 6. Symbol Product data sheet Parameter Conditions Rth(j-a) thermal resistance from junction to ambient Rth(j-t) thermal resistance from junction to tie-point [1] BAS56 Thermal characteristics in free air [1] Min Typ Max Unit - - 500 K/W - - 360 K/W Device mounted on an FR4 PCB. All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 June 2010 © NXP B.V. 2010. All rights reserved. 3 of 12 BAS56 NXP Semiconductors High-speed double diode 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Product data sheet Conditions [1] Min Typ Max Unit - - 1 V VF forward voltage IF = 200 mA IR reverse current VR = 60 V - - 100 nA VR = 60 V; Tj = 150 °C - - 100 μA VR = 120 V [2] - - 100 nA VR = 120 V; Tj = 150 °C [2] - - 100 μA Cd diode capacitance - - 2.5 pF trr reverse recovery time [3] - - 6 ns forward recovery voltage [4] - - 2 V [5] - - 1.5 V VFR BAS56 Parameter f = 1 MHz; VR = 0 V [1] Tamb = 25 °C; device has reached the thermal equilibrium when mounted on an FR4 PCB. [2] Series connection. [3] When switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA. [4] When switched from IF = 400 mA; tr = 30 ns. [5] When switched from IF = 400 mA; tr = 100 ns. All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 June 2010 © NXP B.V. 2010. All rights reserved. 4 of 12 BAS56 NXP Semiconductors High-speed double diode mbh279 300 mbg703 102 IFSM (A) IF (mA) 200 10 100 1 10−1 0 0 1 VF (V) 1 2 102 10 103 104 tp (μs) Tj = 25 °C Based on square wave currents. Tj = 25 °C; prior to surge Fig 1. Forward current as a function of forward voltage; typical values Fig 2. mbh282 102 Non-repetitive peak forward current as a function of pulse duration IR (μA) Cd (pF) 10 1.5 (1) 1 mbh283 2.0 (2) 1.0 10−1 0.5 10−2 0 0 100 Tj (°C) 0 200 10 20 VR (V) 30 f = 1 MHz; Tj = 25 °C (1) VR = 60 V; maximum values (2) VR = 60 V; typical values Fig 3. Reverse current as a function of junction temperature BAS56 Product data sheet Fig 4. Diode capacitance as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 June 2010 © NXP B.V. 2010. All rights reserved. 5 of 12 BAS56 NXP Semiconductors High-speed double diode mbg439 300 IF (mA) 200 (1) 100 (2) 0 0 100 200 Tamb (°C) (1) Single diode loaded (2) Double diode loaded Fig 5. Forward current as a function of ambient temperature; derating curves 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS (1) 90 % VR mga881 input signal output signal (1) IR = 40 mA Fig 6. Reverse recovery time test circuit and waveforms I 1 kΩ RS = 50 Ω D.U.T. 450 Ω I V 90 % OSCILLOSCOPE VFR Ri = 50 Ω 10 % t tr t tp input signal output signal mga882 Input signal: pulse duration tp = 300 ns; duty cycle δ = 0.01. Fig 7. Forward recovery voltage test circuit and waveforms BAS56 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 June 2010 © NXP B.V. 2010. All rights reserved. 6 of 12 BAS56 NXP Semiconductors High-speed double diode 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.0 2.8 1.1 0.9 1.9 4 2.5 2.1 3 0.45 0.15 1.4 1.2 1 2 0.88 0.78 0.48 0.38 0.15 0.09 1.7 Dimensions in mm Fig 8. 04-11-16 Package outline BAS56 (SOT143B) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAS56 [1] BAS56 Product data sheet Package SOT143B Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -215 -235 For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 June 2010 © NXP B.V. 2010. All rights reserved. 7 of 12 BAS56 NXP Semiconductors High-speed double diode 11. Soldering 3.25 0.6 (3×) 0.5 (3×) 1.9 solder lands 0.7 0.6 (3×) (3×) solder resist 2 solder paste 3 occupied area 0.7 0.6 Dimensions in mm 0.75 0.95 0.9 1 Fig 9. sot143b_fr Reflow soldering footprint BAS56 (SOT143B) 4.45 2.2 1.2 (3×) 1.425 (3×) solder lands solder resist 4.6 2.575 occupied area Dimensions in mm 1.425 preferred transport direction during soldering 1 1.2 sot143b_fw Fig 10. Wave soldering footprint BAS56 (SOT143B) BAS56 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 June 2010 © NXP B.V. 2010. All rights reserved. 8 of 12 BAS56 NXP Semiconductors High-speed double diode 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS56 v.3 20100629 Product data sheet - BAS56_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • Legal texts have been adapted to the new company name where appropriate. Section 1.1 “General description”: amended Section 4 “Marking”: updated Table 1 “Quick reference data”: added Section 8 “Test information”: added Figure 8: superseded by minimized package outline drawing Section 10 “Packing information”: added Section 11 “Soldering”: added Section 13 “Legal information”: updated BAS56_2 19960910 Product specification - BAS56_1 BAS56_1 19960423 Product specification - - BAS56 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 June 2010 © NXP B.V. 2010. All rights reserved. 9 of 12 BAS56 NXP Semiconductors High-speed double diode 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BAS56 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 June 2010 © NXP B.V. 2010. All rights reserved. 10 of 12 BAS56 NXP Semiconductors High-speed double diode Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BAS56 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 June 2010 © NXP B.V. 2010. All rights reserved. 11 of 12 BAS56 NXP Semiconductors High-speed double diode 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Quality information . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 June 2010 Document identifier: BAS56