DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS116 Low-leakage diode Product data sheet Supersedes data of 1999 May 26 2003 Dec 12 NXP Semiconductors Product data sheet Low-leakage diode BAS116 FEATURES PINNING • Plastic SMD package PIN DESCRIPTION • Low leakage current: typ. 3 pA 1 anode • Switching time: typ. 0.8 µs 2 not connected • Continuous reverse voltage: max. 75 V 3 cathode • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. 2 lumns 1 APPLICATION • Low leakage current applications in surface mounted circuits. 2 n.c. 1 3 DESCRIPTION 3 MAM106 Top view Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package. Marking code: JVp = made in Hong Kong; Fig.1 JVt = made in Malaysia; JVW = Made in China. Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME − BAS116 DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current CONDITIONS MAX. UNIT − 85 V − 75 V − 215 mA − 500 mA tp = 1 µs − 4 A tp = 1 ms − 1 A tp = 1 s − 0.5 A − 250 mW see Fig.2; note 1 MIN. square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 2003 Dec 12 2 NXP Semiconductors Product data sheet Low-leakage diode BAS116 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS TYP. MAX. UNIT IF = 1 mA − 0.9 V IF = 10 mA − 1 V IF = 50 mA − 1 .1 V IF = 150 mA − 1. 25 V see Fig.3 see Fig.5 VR = 75 V 0.003 5 nA VR = 75 V; Tj = 150 °C 3 80 nA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 − pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 0.8 3 µs THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-tp) thermal resistance from junction to tie-point Rth(j-a) thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 2003 Dec 12 3 VALUE UNIT 330 K/W 500 K/W NXP Semiconductors Product data sheet Low-leakage diode BAS116 GRAPHICAL DATA MLB755 300 MLB752 - 1 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 200 100 100 (1) 0 0 100 T amb ( oC) (2) (3) 0 200 0 0.4 Device mounted on an FR4 printed-circuit board. (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 Fig.3 Maximum permissible continuous forward current as a function of ambient temperature. 0.8 1.2 V F (V) Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents; Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Dec 12 4 1.6 104 NXP Semiconductors Product data sheet Low-leakage diode BAS116 mlb754 102 MBG526 2 handbook, halfpage IR (nA) Cd (pF) (1) 10 1 1 10−1 (2) 10−2 10−3 0 0 50 100 150 Tj (°C) 0 200 5 (1) Maximum values. (2) Typical values. VR = 75 V. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. handbook, full pagewidth tr 10 15 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. tp t D.U.T. R = 50 Ω S V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal (1) IR = 1 mA. Fig.7 Reverse recovery time test circuit and waveforms. 2003 Dec 12 t rr 5 output signal NXP Semiconductors Product data sheet Low-leakage diode BAS116 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2003 Dec 12 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 6 NXP Semiconductors Product data sheet Low-leakage diode BAS116 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Dec 12 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp8 Date of release: 2003 Dec 12 Document order number: 9397 750 12391