Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BAS416
Low-leakage diode
Product data sheet
Supersedes data of 2002 Nov 19
2004 Jan 26
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS416
FEATURES
PINNING
• Plastic SMD package
PIN
DESCRIPTION
• Low leakage current: typ. 3 pA
1
cathode
• Switching time: typ. 0.8 µs
2
anode
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
handbook, halfpage
1
2
APPLICATIONS
• Low-leakage current applications in surface mounted
circuits.
MAM406
Marking code: D4.
The marking bar indicates the cathode.
DESCRIPTION
Epitaxial, medium-speed switching diode with a low
leakage current encapsulated in a small SOD323 SMD
plastic package.
Fig.1
Simplified outline (SOD323) (SC-76) and
symbol.
ORDERING INFORMATION
TYPE
NUMBER
BAS416
PACKAGE
NAME
−
DESCRIPTION
VERSION
plastic surface mounted package; 2 leads
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VRRM
repetitive peak reverse voltage
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
CONDITIONS
MIN.
MAX.
UNIT
−
85
V
−
75
V
−
200
mA
−
500
mA
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
−
250
mW
see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
2004 Jan 26
2
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS416
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
CONDITIONS
TYP.
MAX.
UNIT
see Fig.3
reverse current
IF = 1 mA
−
0.9
V
IF = 10 mA
−
1
V
IF = 50 mA
−
1.1
V
IF = 150 mA
−
1.25
V
VR = 75 V
0.003
5
nA
VR = 75 V; Tj = 150 °C
3
80
nA
see Fig.5
Cd
diode capacitance
VR = 0; f = 1 MHz; see Fig.6
2
−
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
0.8
3
µs
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
Note
1. Refer to SOD323 (SC-76) standard mounting conditions.
2004 Jan 26
3
VALUE
UNIT
450
K/W
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS416
GRAPHICAL DATA
MHC323
300
MLB752 - 1
300
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
200
200
100
100
(1)
(2)
(3)
0
0
0
100
Tamb (°C)
0
200
0.8
1.2
V F (V)
1.6
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0.4
Maximum permissible continuous
forward current as a function of
ambient temperature.
Fig.3
Forward current as a function of
forward voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2004 Jan 26
4
104
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS416
MLB754
2
10halfpage
handbook,
IR
(nA)
MBG526
2
handbook, halfpage
10
Cd
(pF)
(1)
1
1
10 1
(2)
10 2
10 3
0
0
50
100
150
0
200
T j ( oC)
VR = 75 V.
(1) Maximum values.
(2) Typical values.
Fig.5
5
10
15
VR (V)
20
f = 1 MHz; Tj = 25 °C.
Reverse current as a function of
junction temperature.
Fig.6
handbook, full pagewidth
tr
Diode capacitance as a function
of reverse voltage; typical values.
tp
t
D.U.T.
R = 50 Ω
S
V = VR I F x R S
IF
10%
IF
SAMPLING
OSCILLOSCOPE
t
R i = 50 Ω
MGA881
(1)
90%
VR
input signal
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
2004 Jan 26
t rr
5
output signal
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS416
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
v
HD
M
A
Q
1
2
bp
A
A1
(1)
c
Lp
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
HD
Lp
Q
v
mm
1.1
0.8
0.05
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
2004 Jan 26
REFERENCES
IEC
JEDEC
JEITA
SC-76
6
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS416
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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above those given in the Characteristics sections of this
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 26
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R76/02/pp8
Date of release: 2004 Jan 26
Document order number: 9397 750 12591