Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV199
Low-leakage double diode
Product data sheet
Supersedes data of 1999 May 11
2001 Oct 12
NXP Semiconductors
Product data sheet
Low-leakage double diode
FEATURES
BAV199
MARKING
• Plastic SMD package
• Low leakage current: typ. 3 pA
TYPE NUMBER
MARKING
CODE(1)
PIN
1
anode
BAV199
JY∗
2
cathode
3
anode; cathode
• Switching time: typ. 0.8 µs
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
PINNING
Note
DESCRIPTION
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
• Repetitive peak forward current:
max. 500 mA.
APPLICATION
2
handbook, 4 columns
1
• Low-leakage current applications in
surface mounted circuits.
2
1
DESCRIPTION
3
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are
connected in series.
3
MAM107
Top view
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
−
85
V
VR
continuous reverse voltage
−
75
V
IF
continuous forward current
single diode loaded; note 1; see Fig.2
−
160
mA
double diode loaded; note 1; see Fig.2
−
140
mA
IFRM
repetitive peak forward current
−
500
mA
IFSM
non-repetitive peak forward
current
tp = 1 µs
−
4
A
tp = 1 ms
−
1
A
tp = 1 s
−
0.5
A
square wave; Tj = 25 °C prior to surge;
see Fig.4
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
Tamb = 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on a FR4 printed-circuit board.
2001 Oct 12
2
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
IR
forward voltage
see Fig.3
reverse current
IF = 1 mA
−
900
mV
IF = 10 mA
−
1 000
mV
IF = 50 mA
−
1100
mV
IF = 150 mA
−
1 250
mV
VR = 75 V
0.003
5
nA
VR = 75 V; Tj = 150 °C
3
80
nA
see Fig.5
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2
−
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
0.8
3
µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on a FR4 printed-circuit board.
2001 Oct 12
3
VALUE
UNIT
360
K/W
500
K/W
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199
GRAPHICAL DATA
MLB756
300
MLB752 - 1
300
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
200
200
(1)
(2)
(3)
single diode loaded
100
100
double diode loaded
0
0
100
T amb ( oC)
0
200
0
0.8
1.2
V F (V)
1.6
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on a FR4 printed-circuit board.
Fig.2
0.4
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage; per diode.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
104
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
2001 Oct 12
4
NXP Semiconductors
Product data sheet
Low-leakage double diode
MLB754
2
10halfpage
handbook,
IR
(nA)
10
BAV199
MBG526
2
handbook, halfpage
(1)
Cd
(pF)
1
1
10 1
(2)
10 2
10 3
0
0
50
100
150
T j ( oC)
0
200
VR = 75 V.
(1) Maximum values.
(2) Typical values.
Fig.5
5
10
15
VR (V)
20
f = 1 MHz; Tj = 25 °C.
Reverse current as a function of junction
temperature; per diode.
Fig.6
handbook, full pagewidth
tr
Diode capacitance as a function of reverse
voltage; per diode; typical values.
tp
t
D.U.T.
RS = 50 Ω
V = VR I F x R S
IF
10%
IF
SAMPLING
OSCILLOSCOPE
t
R i = 50 Ω
MGA881
(1)
90%
VR
input signal
Fig.7 Reverse recovery time test circuit and waveforms.
2001 Oct 12
t rr
5
output signal
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2001 Oct 12
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
6
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV199
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Oct 12
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/04/pp8
Date of release: 2001 Oct 12
Document order number: 9397 750 08764
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