Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
PMEG2005EB
Low VF MEGA Schottky barrier
diode
Product data sheet
Supersedes data of 2003 Feb 20
2003 Apr 04
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
FEATURES
PMEG2005EB
PINNING
• Forward current: 0.5 A
PIN
• Reverse voltage: 20 V
1
;
• Very low forward voltage
DESCRIPTION
cathode
2
• Guard ring protected
• Ultra small SMD package.
APPLICATIONS
• Ultra high-speed switching
handbook, halfpage
• Voltage clamping
• Protection circuits
k
anode
a
Top view
• Low current rectification
• Low power consumption applications (e.g. handheld
devices).
MAM403
Marking code: L5.
The marking bar indicates the cathode.
DESCRIPTION
Fig.1
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode, encapsulated in a SOD523
(SC-79) ultra small SMD plastic package.
Simplified outline (SOD523; SC-79) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
20
V
IF
continuous forward current
−
500
mA
IFRM
repetitive peak forward current
tp = 1 ms; δ ≤ 0.25
−
3.5
A
IFSM
non-repetitive peak forward current
t = 8 ms square wave
−
6
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
125
°C
Tamb
operating ambient temperature
−65
+125
°C
2003 Apr 04
2
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
PMEG2005EB
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
VF
PARAMETER
continuous forward voltage
CONDITIONS
TYP.
MAX.
UNIT
see Fig.2
IF = 0.1 mA
120
180
mV
IF = 1 mA
180
240
mV
IF = 10 mA
245
290
mV
IF = 100 mA
320
380
mV
IF = 500 mA
430
480
mV
7
30
μA
30
pF
IR
continuous reverse current
VR = 10 V; see Fig.3; note 1
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Fig.4 24
Note
1. Pulsed test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
note 1
Note
1. Refer to SOD523 (SC-79) standard mounting conditions.
2003 Apr 04
3
VALUE
UNIT
400
K/W
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
PMEG2005EB
GRAPHICAL DATA
MHC456
103
handbook, halfpage
MHC457
104
handbook, halfpage
IF
(mA)
IR
(μA)
102
(1)
103
(1)
10
(2)
(2)
(3)
102
1
10
10−1
10−2
0
0.1
0.2
0.3
0.4
1
0.5
VF (V)
(3)
0
10
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MHC458
50
handbook, halfpage
Cd
(pF)
40
30
20
10
0
5
0
10
15
VR (V)
20
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Apr 04
4
20
VR (V)
30
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
PMEG2005EB
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD523
A
c
v M A
HE
A
D
1
E
0
0.5
1 mm
scale
2
DIMENSIONS (mm are the original dimensions)
bp
(1)
UNIT
A
bp
c
D
E
HE
v
mm
0.65
0.58
0.34
0.26
0.17
0.11
1.25
1.15
0.85
0.75
1.65
1.55
0.1
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
2003 Apr 04
REFERENCES
IEC
JEDEC
JEITA
SC-79
5
EUROPEAN
PROJECTION
ISSUE DATE
98-11-25
02-12-13
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
PMEG2005EB
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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information supplied prior to the publication hereof.
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
2003 Apr 04
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/02/pp7
Date of release: 2003 Apr 04
Document order number: 9397 750 11354