Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PMEG1020EV
Ultra low VF MEGA Schottky barrier
rectifier
Product data sheet
2003 Jul 15
NXP Semiconductors
Product data sheet
Ultra low VF MEGA Schottky barrier
rectifier
FEATURES
PMEG1020EV
PINNING
• Forward current: 2 A
PIN
DESCRIPTION
• Reverse voltage: 10 V
1
cathode
• Ultra low forward voltage
2
cathode
• Ultra small plastic SMD package.
3
anode
4
anode
APPLICATIONS
5
cathode
• Low voltage rectification
6
cathode
• High efficiency DC/DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications.
handbook, halfpage
6
5
4
DESCRIPTION
1, 2
5, 6
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection encapsulated in a SOT666 ultra small
plastic SMD package.
3, 4
MHC310
1
2
3
Marking code: F2.
Fig.1 Simplified outline (SOT666) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
10
V
IF
continuous forward current
Tsp ≤ 55 °C; note 1
−
2
A
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ ≤ 0.5; note 1
−
3.2
A
IFSM
non-repetitive peak forward current
tp = 8 ms square wave; note 1
−
9
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Only valid if pins 3 and 4 are connected in parallel.
2003 Jul 15
2
NXP Semiconductors
Product data sheet
Ultra low VF MEGA Schottky barrier
rectifier
PMEG1020EV
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
IR
Cd
PARAMETER
forward voltage
CONDITIONS
TYP.
MAX.
UNIT
see Fig.2; note 1
reverse current
IF = 0.01 A
100
130
mV
IF = 0.1 A
164
200
mV
IF = 1 A
255
350
mV
IF = 2 A
306
460
mV
VR = 5 V
0.7
2
mA
VR = 8 V
1
2.5
mA
VR = 10 V
1.2
3
mA
37
45
pF
see Fig.3 note 2
diode capacitance
VR = 5 V; f = 1 MHz; see Fig.4
Notes
1. Pulse test: tp = 300 μs; δ = 0.02.
2. For Schottky barrier rectifiers thermal runaway has to be considered, as in some applications the reverse power
losses (PR) are a significant part of the total power losses.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-s
thermal resistance from junction to solder point
VALUE
UNIT
note 1
405
K/W
note 2
215
K/W
note 3
80
K/W
Notes
1. Refer to SOT666 standard mounting conditions.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm2.
3. Solder point of cathode tabs.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Jul 15
3
NXP Semiconductors
Product data sheet
Ultra low VF MEGA Schottky barrier
rectifier
PMEG1020EV
GRAPHICAL DATA
MDB591
104
handbook, halfpage
MDB195
105
handbook, halfpage
IR
(μA)
IF
(mA)
(1)
104
103
103
(1)
102
(2)
(2)
(3)
102
10
10
(3)
1
0
100
200
300
1
400
500
VF (mV)
0
2
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
(1) Tamb = 85 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MDB196
120
handbook, halfpage
Cd
(pF)
100
80
60
40
20
2
0
4
6
8
10
VR (V)
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Jul 15
4
4
6
8
10
VR (V)
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Ultra low VF MEGA Schottky barrier
rectifier
PMEG1020EV
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2003 Jul 15
EUROPEAN
PROJECTION
5
NXP Semiconductors
Product data sheet
Ultra low VF MEGA Schottky barrier
rectifier
PMEG1020EV
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any inconsistency or conflict between information
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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use in medical, military, aircraft, space or life support
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of an NXP Semiconductors product can reasonably be
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
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described herein may be subject to export control
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Jul 15
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp7
Date of release: 2003 Jul 15
Document order number: 9397 750 11686
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