PIN Photodiodes PNZ323B PIN Photodiode Not soldered 1.5 max. 6.0±0.2 7.5±0.2 (2) 5.5±0.2 1.0 For optical control systems Unit : mm 4.6±0.2 2.3 Chip Features 22.25±1.0 High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 970 nm (typ.) 1.32 0.5 31.25±1.0 1.5±0.2 Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) 2- 0.6±0.1 0.5 (1.5) Wide detection area, wide acceptance half angle : θ = 70 deg. (typ.) Adoption of visible light cutoff resin Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit VR 30 V Reverse voltage (DC) Power dissipation PD 100 mW Operating ambient temperature Topr –30 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C 0.6±0.1 3.8±0.2 (2.3) 2.54 1 2 1: Anode 2: Cathode Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max 50 Unit Dark current ID VR = 10V 5 Photo current IL VR = 10V, L = 1000 lx*1 31 µA Sensitivity to infrared emitters SIR*2 Peak sensitivity wavelength λP *3 Response time tr, tf Response time tr, tf*3 nA 4 µA VR = 10V 970 nm VR = 10V, RL = 1kΩ 50 ns VR = 10V, RL = 100kΩ 5 µs VR = 5V, H = 0.1mW/cm2 3.2 Capacitance between pins Ct VR = 0V, f = 1MHz 70 pF Acceptance half angle θ Measured from the optical axis to the half power point 70 deg. *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Light source : λ = 940 nm *3 Switching time measurement circuit *2 Sig.IN VR = 10V (Input pulse) λP = 800nm Sig.OUT ,,,, ,,,, (Output pulse) 50Ω 90% 10% RL td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 PIN Photodiodes PNZ323B PD — Ta 60 40 ID (nA) 10 2 10 Dark current IL (µA) Photo current PD (mW) 80 10 3 VR = 10V Ta = 25˚C T = 2856K 100 Power dissipation ID — Ta IL — L 10 3 120 1 VR = 10V 10 2 10 1 20 0 – 30 0 20 40 60 80 10 –1 10 100 10 2 Ambient temperature Ta (˚C ) 80 60 40 20 40 60 80 100 Directional characteristics 100 VR = 10V Ta = 25˚C Ta = 25˚C S (%) 80 60 Relative sensitivity S (%) 100 Relative sensitivity IL (%) Relative photo current 120 0 Ambient temperature Ta (˚C ) Spectral sensitivity characteristics 100 VR = 10V L = 1000 lx T = 2856K 140 10 –1 – 40 – 20 10 4 Illuminance L (lx) IL — Ta 160 10 3 40 20 80 60 40 20 20 0 – 40 – 20 0 20 40 60 80 0 600 100 700 Ambient temperature Ta (˚C ) Ct — V R 20 10 Reverse voltage VR (V) 10 2 40 80 ID — VR VR = 10V 50Ω Sig. OUT RL tr td 90% 10% tf 1 Dark current 40 10 0 10 2 ,, 60 1 40 Angle θ (deg.) ID (nA) tr , tf (µs) 80 10 –1 80 λ (nm) tr , tf — RL Rise time, Fall time Ct (pF) Capacitance between pins 0 1000 1100 1200 10 2 Sig.IN 2 900 Wavelength 100 0 10 –2 800 10 –1 10 –2 10 –1 1 10 10 2 External load resistance RL (kΩ) 10 1 10 –1 0 8 16 24 32 40 Reverse voltage VR (V) 48