DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PLVA6xxA series Low-voltage avalanche regulator diodes Product data sheet Supersedes data of 1999 May 25 2004 Jan 14 NXP Semiconductors Product data sheet Low-voltage avalanche regulator diodes FEATURES PLVA6xxA series PINNING • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series PIN • Hard breakdown knee • Low noise: approximately 1⁄10 of conventional series • Total power dissipation: max. 250 mW DESCRIPTION 1 anode 2 not connected 3 cathode • Small tolerances of VZ • Working voltage range: nominal 5.00 to 6.80 V • Non-repetitive peak reverse power dissipation: maximal 30 W. handbook, halfpage 2 1 APPLICATIONS 2 n.c. • Low current, low power, low noise applications • CMOS RAM back-up circuits 1 3 • Voltage stabilizers 3 • Voltage limiters Top view MAM243 • Smoke detector relays. DESCRIPTION Fig.1 Simplified outline (SOT23) and symbol. High performance voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of PLVA650A to PLVA668A. MARKING TYPE NUMBER MARKING CODE(1) PLVA650A *9A PLVA653A *9B PLVA656A *9C PLVA659A *9D PLVA662A *9E PLVA665A *9F PLVA668A *9G Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 2004 Jan 14 2 NXP Semiconductors Product data sheet Low-voltage avalanche regulator diodes PLVA6xxA series ORDERING INFORMATION TYPE NUMBER PLVA6xxA PACKAGE NAME DESCRIPTION − VERSION plastic surface mounted package; 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. 250 mA − 250 mA continuous forward current IZRM repetitive peak working current PZSM non-repetitive peak reverse power dissipation tp = 100 μs; Tj = 150 °C − Ptot total power dissipation Tstg Tj 30 W − 250 mW storage temperature −65 +150 °C junction temperature − 150 °C Tamb = 25 °C; note 1 Note 1. Device mounted on an FR4 printed circuit-board. 2004 Jan 14 UNIT − IF tp = 100 μs; δ = 10% MAX. 3 NXP Semiconductors Product data sheet Low-voltage avalanche regulator diodes PLVA6xxA series ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS V PLVA650A 4.80 5.00 5.20 V PLVA653A 5.10 5.30 5.50 V PLVA656A 5.40 5.60 5.80 V PLVA659A 5.70 5.90 6.10 V PLVA662A 6.00 6.20 6.40 V PLVA665A 6.30 6.50 6.70 V PLVA668A 6.60 6.80 7.00 V PLVA650A − 4.30 − V PLVA653A − 5.20 − V PLVA656A − 5.51 − V PLVA659A − 5.85 − V PLVA662A − 6.19 − V PLVA665A − 6.49 − V − 6.80 − V − − 700 Ω PLVA653A − − 250 Ω PLVA656A to PLVA668A − − 100 Ω PLVA650A − 0.20 − mV/K PLVA653A − 1.60 − mV/K PLVA656A − 1.90 − mV/K PLVA659A − 2.40 − mV/K PLVA662A − 2.65 − mV/K PLVA665A − 2.90 − mV/K PLVA668A − 3.40 − mV/K PLVA650A − − 20 000 nA PLVA653A − − 5 000 nA PLVA656A − − 1 000 nA PLVA659A − − 500 nA PLVA662A − − 100 nA PLVA665A − − 50 nA PLVA668A − − 10 nA IZ = 250 μA working voltage IZ = 10 μA PLVA668A dynamic resistance PLVA650A IR 2004 Jan 14 UNIT 0.9 IF = 10 mA working voltage SZ MAX. − forward voltage VZ RZ TYP. − VF VZ MIN. temperature coefficient reverse current 1 kHz superimposed; IZAC is 10% of IZDC; IZ = 250 μA IZ = 250 μA VR = 80% VZ nominal 4 NXP Semiconductors Product data sheet Low-voltage avalanche regulator diodes SYMBOL IR IR ΔVZ Vn PARAMETER reverse current PLVA6xxA series CONDITIONS MIN. TYP. MAX. UNIT VR = 50% VZ nominal PLVA650A − 34 − nA PLVA653A − 22 − nA PLVA656A − 1.1 − nA PLVA659A − 0.9 − nA PLVA662A − 0.9 − nA PLVA665A − 0.9 − nA PLVA668A − 0.8 − nA PLVA650A − 21 − μA PLVA653A − 3.5 − μA PLVA656A − 1.3 − μA PLVA659A − 1.0 − μA PLVA662A − 0.05 − μA PLVA665A − 0.04 − μA PLVA668A − 0.006 − μA reverse current VR = 90% VZ nominal line regulation PLVA659A to PLVA668A ILO = 10 μA; IHI = 1 mA − − 0.1 V PLVA656A ILO = 50 μA; IHI = 1 mA − − 0.1 V PLVA650A ILO = 100 μA; IHI = 1 mA − − 0.4 V PLVA653A ILO = 100 μA; IHI = 1 mA − − 0.2 V f = 1 kHz; B = 1 kHz; IZ = 250 μA − − 1.0 μV -----------Hz noise voltage density THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-tp) thermal resistance from junction to tie-point Rth(j-a) thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed circuit-board. 2004 Jan 14 5 VALUE UNIT 330 K/W 500 K/W NXP Semiconductors Product data sheet Low-voltage avalanche regulator diodes PLVA6xxA series PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Jan 14 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 6 NXP Semiconductors Product data sheet Low-voltage avalanche regulator diodes PLVA6xxA series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. 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Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jan 14 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/03/pp8 Date of release: 2004 Jan 14 Document order number: 9397 750 12445