KAF-1603 IMAGE SENSOR 1536 (H) X 1024 (V) FULL FRAME CCD IMAGE SENSOR JUNE 18, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0036 KAF-1603 Image Sensor TABLE OF CONTENTS Summary Specification ......................................................................................................................................................................................... 4 Description .................................................................................................................................................................................................... 4 Features ......................................................................................................................................................................................................... 4 Application .................................................................................................................................................................................................... 4 Ordering Information ............................................................................................................................................................................................ 5 Device Description ................................................................................................................................................................................................. 6 Architecture .................................................................................................................................................................................................. 6 Dark Reference Pixels ............................................................................................................................................................................ 7 Output Structure ..................................................................................................................................................................................... 7 Dummy Pixels ........................................................................................................................................................................................... 7 Image Acquisition ........................................................................................................................................................................................ 7 Charge Transport ......................................................................................................................................................................................... 7 Horizontal Register ..................................................................................................................................................................................... 8 Output Structure ..................................................................................................................................................................................... 8 Physical Description .................................................................................................................................................................................... 9 Pin Description and Device Orientation ............................................................................................................................................ 9 Imaging Performance .......................................................................................................................................................................................... 10 Typical Operational Conditions............................................................................................................................................................. 10 Specifications............................................................................................................................................................................................. 10 Typical Performance Curves ............................................................................................................................................................................ 11 Defect Definitions ................................................................................................................................................................................................ 12 Operating Conditions .............................................................................................................................................................................. 12 Specifications............................................................................................................................................................................................. 12 Operation .................................................................................................................................................................................................................. 13 Absolute Maximum Ratings ................................................................................................................................................................... 13 DC Bias Operating Conditions ............................................................................................................................................................... 14 AC Operating Conditions ........................................................................................................................................................................ 14 Clock Levels ........................................................................................................................................................................................... 14 Timing ......................................................................................................................................................................................................................... 15 Requirements and Characteristics ....................................................................................................................................................... 15 Frame Timing ............................................................................................................................................................................................. 16 Line Timing (each Output) ...................................................................................................................................................................... 16 Storage and Handling .......................................................................................................................................................................................... 17 Storage Conditions................................................................................................................................................................................... 17 ESD ............................................................................................................................................................................................................... 17 Cover Glass Care and Cleanliness ......................................................................................................................................................... 17 Environmental Exposure ........................................................................................................................................................................ 17 Soldering Recommendations ................................................................................................................................................................ 17 Mechanical Information ..................................................................................................................................................................................... 18 Completed Assembly ............................................................................................................................................................................... 18 Quality Assurance and Reliability .................................................................................................................................................................. 20 Quality and Reliability ............................................................................................................................................................................. 20 Replacement .............................................................................................................................................................................................. 20 Liability of the Supplier ........................................................................................................................................................................... 20 Liability of the Customer ........................................................................................................................................................................ 20 Test Data Retention ................................................................................................................................................................................. 20 Mechanical.................................................................................................................................................................................................. 20 www.truesenseimaging.com Revision 1.1 PS-0036 Pg 2 KAF-1603 Image Sensor Life Support Applications Policy .................................................................................................................................................................... 20 Revision Changes................................................................................................................................................................................................... 21 MTD/PS-0666 ............................................................................................................................................................................................. 21 PS-0036 ....................................................................................................................................................................................................... 21 TABLE OF FIGURES Figure 1: Block Diagram ................................................................................................................................................................................ 6 Figure 2: Microlens Cross-Section............................................................................................................................................................... 6 Figure 3: Output Schematic ......................................................................................................................................................................... 8 Figure 4: Output Structure Load Diagram ................................................................................................................................................ 8 Figure 5: Pinout Diagram .............................................................................................................................................................................. 9 Figure 6: Typical Spectral Response .........................................................................................................................................................11 Figure 7: Active Pixel Region .....................................................................................................................................................................12 Figure 8: Frame Timing ................................................................................................................................................................................16 Figure 9: Line Timing ....................................................................................................................................................................................16 Figure 10: Timing Diagrams ........................................................................................................................................................................16 Figure 11: Completed Assembly (1 of 2) .................................................................................................................................................18 Figure 12: Completed Assembly (2 of 2) .................................................................................................................................................19 www.truesenseimaging.com Revision 1.1 PS-0036 Pg 3 KAF-1603 Image Sensor Summary Specification KAF-1603 Image Sensor DESCRIPTION The KAF-1603 Image Sensor is a high performance monochrome area CCD (charge-coupled device) image sensor with 1536 H x 1024 V photoactive pixels designed for a wide range of image sensing applications. The sensor incorporates true two-phase CCD technology, simplifying the support circuits required to drive the sensor as well as reducing dark current without compromising charge capacity. The sensor also utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode. Optional microlenses focus the majority of the light through the transparent gate, increasing the optical response further. FEATURES True Two Phase Full Frame Architecture TRUESENSE Transparent Gate Electrode for high sensitivity APPLICATION Scientific Imaging Parameter Typical Value Architecture Full Frame CCD Total Number of Pixels 1552 (H) x 1032 (V) Number of Active Pixels 1536 (H) x 1024 (V) = approx. 1.6 M Pixel Size 9.0 µm (H) x 9.0 µm (V) Active Image Size 13.8 mm (H) x 9.2 mm (V) Die Size 15.5 mm (H) x 10 mm (V) Aspect Ratio 3:2 Saturation Signal 100,000 electrons Output Sensitivity 10 µV/e- Quantum Efficiency (with microlens) Peak: 400 nm: 77% 45% Quantum Efficiency (no microlens) Peak: 400 nm: 65% 30% Read Noise 15 electrons Dark Current (T = 25 °C) <10 pA/cm2 Dark Current Doubling Temperature 6.3 °C Dynamic Range 74 dB Charge Transfer Efficiency >0.99999 Blooming Suppression None Maximum Data Rate 10 MHz Package CERDIP Package (sidebrazed) Cover Glass Clear or AR coated, 2sides Parameters above are specified at 25 °C, unless otherwise noted. www.truesenseimaging.com Revision 1.1 PS-0036 Pg 4 KAF-1603 Image Sensor Ordering Information Catalog Number Product Name Description 4H0217 KAF-1603-ABA-CD-B2 Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed), Clear Cover Glass with AR coating (both sides), Grade 2 4H0219 KAF-1603-ABA-CD-AE Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed), Clear Cover Glass with AR coating (both sides), Engineering Sample 4H0222 KAF-1603-ABA-CP-B2 Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed), Taped Clear Cover Glass, no coatings, Grade 2 4H0223 KAF-1603-ABA-CP-B3 Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed), Taped Clear Cover Glass, no coatings, Grade 3 4H0224 KAF-1603-ABA-CP-AE Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed), Taped Clear Cover Glass, no coatings, Engineering Sample 4H0337 KAF-1603-AAA-CP-B2 Monochrome, No Microlens, CERDIP Package (sidebrazed), Taped Clear Cover Glass, no coatings, Grade 2 4H0339 KAF-1603-AAA-CP-AE Monochrome, No Microlens, CERDIP Package (sidebrazed), Taped Clear Cover Glass, no coatings, Engineering Sample 4H0078 KEK-4H0078-KAF-1602/1603-12-5 Evaluation Board (Complete Kit) Marking Code KAF-1603-ABA [Serial Number] KAF-1603-AAA [Serial Number] N/A See Application Note Product Naming Convention for a full description of the naming convention used for image sensors. For reference documentation, including information on evaluation kits, please visit our web site at www.truesenseimaging.com. Please address all inquiries and purchase orders to: Truesense Imaging, Inc. 1964 Lake Avenue Rochester, New York 14615 Phone: (585) 784-5500 E-mail: [email protected] ON Semiconductor reserves the right to change any information contained herein without notice. All information furnished by ON Semiconductor is believed to be accurate. www.truesenseimaging.com Revision 1.1 PS-0036 Pg 5 KAF-1603 Image Sensor Device Description ARCHITECTURE 4 Dark lines V1 V2 KAF - 1603 Usable Active Image Area 1536(H) x 1024(V) 9 x 9 µm pixels Guard 3:2 aspect ratio Vrd R Vdd Vout Vss Sub 4 Dark lines 1536 Active Pixels/Line 12 Dark 4 Dark H1 H2 2 Inactive 10 Inactive Vog Figure 1: Block Diagram The sensor consists of 1552 parallel (vertical) CCD shift registers each 1032 elements long. These registers act as both the photosensitive elements and as the transport circuits that allow the image to be sequentially read out of the sensor. The parallel (vertical) CCD registers transfer the image one line at a time into a single 1564 element (horizontal) CCD shift register. The horizontal register transfers the charge to a single output amplifier. The output amplifier is a two-stage source follower that converts the photo-generated charge to a voltage for each pixel. Micro lens V1 electrode V2 electrode Silicon Figure 2: Microlens Cross-Section Micro lenses are formed along each row. They are effectively half of a cylinder centered on the transparent gates, extending continuously in the row direction. They act to direct the photons away from the polysilicon gate and through the transparent gate. This increases the response, especially at the shorter wavelengths (< 600 nm). www.truesenseimaging.com Revision 1.1 PS-0036 Pg 6 KAF-1603 Image Sensor Dark Reference Pixels There are 4 light shielded pixels at the beginning of each line, and 12 at the end. There are 4 dark lines at the start of every frame and 4 dark lines at the end of each frame. Under normal circumstances, these pixels do not respond to light. However, dark reference pixels in close proximity to an active pixel can scavenge signal depending on light intensity and wavelength and therefore will not represent the true dark signal. Output Structure Charge presented to the floating diffusion is converted into a voltage and current amplified in order to drive off-chip loads. The resulting voltage change seen at the output is linearly related to the amount of charge placed on the floating diffusion. Once the signal has been sampled by the system electronics, the reset gate (φR) is clocked to remove the signal, and the floating diffusion is reset to the potential applied by Vrd (see Figure 3). More signal at the floating diffusion reduces the voltage seen at the output pin. In order to activate the output structure, an off-chip load must be added to the Vout pin of the device such as shown in Figure 4. Dummy Pixels Within the horizontal shift register are 10 leading additional pixels that are not associated with a column of pixels within the vertical register. These pixels contain only horizontal shift register dark current signal and do not respond to light. A few leading dummy pixels may scavenge false signal depending on operating conditions. There are two more dummy pixels at the end of each line IMAGE ACQUISITION An electronic representation of an image is formed when incident photons falling on the sensor plane create electronhole pairs within the sensor. These photon-induced electrons are collected locally by the formation of potential wells at each photogate or pixel site. The number of electrons collected is linearly dependent on light level and exposure time and non-linearly dependent on wavelength. When the pixel's capacity is reached, excess electrons will leak into the adjacent pixels within the same column. This is termed blooming. During the integration period, the φV1 and φV2 register clocks are held at a constant (low) level, and the sensor is illuminated. See Figure 8. The sensor must be illuminated only during the integration period. Light must not reach the sensor during the time the image is read out. This is usually accomplished with the use of a mechanical shutter or a pulsed light source. CHARGE TRANSPORT Referring to Figure 9, the integrated charge from each photogate is transported to the output using a two-step process. During this readout time, the sensor needs to be protected from all light through the use of a shutter or pulsed light source. Each line (row) of charge is first moved from the vertical CCD to the horizontal CCD register using the φV1 and φV2 register clocks. The horizontal CCD is presented a new line on the falling edge of φV2 while φH1 is held high. The horizontal CCD then transports each line, pixel by pixel, to the output structure by alternately clocking the φH1 and φH2 pins in a complementary fashion. On each falling edge of φH2 a new charge packet is transferred onto a floating diffusion and sensed by the output amplifier. www.truesenseimaging.com Revision 1.1 PS-0036 Pg 7 KAF-1603 Image Sensor HORIZONTAL REGISTER Output Structure H1 HCCD Charge Transfer H2 H1 VDD H2 Vog R Vrd Floating Diffusion Vout Source Follower #1 Source Follower #2 Figure 3: Output Schematic +15V 0.1uF ~5ma Vout 2N3904 or equivalent Buffered Output 140 1k Figure 4: Output Structure Load Diagram www.truesenseimaging.com Revision 1.1 PS-0036 Pg 8 KAF-1603 Image Sensor PHYSICAL DESCRIPTION Pin Description and Device Orientation 24 N/C 23 Guard 3 22 V1 VRD 4 21 V1 R 5 20 V2 VSS 6 19 V2 H1 7 18 V2 H2 8 17 V2 N/C 9 16 V1 N/C 10 15 V1 Vsub 11 14 Vsub N/C 13 N/C VOG 1 Vout 2 VDD Pin 1 Pixel 1,1 12 Figure 5: Pinout Diagram Notes: 1. Pin The KAF-1603 is mechanically the same and electrically identical to the KAF-0402 sensor. It is also mechanically the same as the KAF-0261 and KAF-3200 sensors. There are some electrical differences since the KAF-0261 has two outputs and two additional clock inputs. The KAF-3200 requires that pin 11 be a “No connect” and be electrically floating. Refer to their specifications for details. Name Description Pin Name Description 1 Vog Output Gate 13 N/C No Connection (open pin) 2 Vout Video Output 14 Vsub Substrate (Ground) 3 Vdd Amplifier Supply 15 φV1 Vertical CCD Clock - Phase 1 4 Vrd Reset Drain 16 φV1 Vertical CCD Clock - Phase 1 5 φR Reset Clock 17 φV2 Vertical CCD Clock - Phase 2 6 Vss Amplifier Supply Return 18 φV2 Vertical CCD Clock - Phase 2 7 φH1 Horizontal CCD Clock - Phase 1 19 φV2 Vertical CCD Clock - Phase 2 8 φH2 Horizontal CCD Clock - Phase 2 20 φV2 Vertical CCD Clock - Phase 2 9 N/C No Connection (open pin) 21 φV1 Vertical CCD Clock - Phase 1 10 N/C No Connection (open pin) 22 φV1 Vertical CCD Clock - Phase 1 11 Vsub Substrate (Ground) 23 Guard Guard Ring 12 N/C No Connection (open pin) 24 N/C No Connection (open pin) www.truesenseimaging.com Revision 1.1 PS-0036 Pg 9 KAF-1603 Image Sensor Imaging Performance TYPICAL OPERATIONAL CONDITIONS All values measured at 25 °C, and nominal operating conditions. These parameters exclude defective pixels. SPECIFICATIONS Description Saturation Signal Vertical CCD capacity Horizontal CCD capacity Output Node capacity Symbol Nsat Min. Nom. 85000 170000 190000 100000 200000 220000 Quantum Efficiency (microlens) Quantum Efficiency (no microlens) Max Units Notes Verification Plan electrons/pixel 1 design9 240000 77% 65% %QE 2.0 % 2 design9 % 3 die8 4 die8 design9 Photoresponse Non-Linearity PRNL 1.0 Photoresponse Non-Uniformity PRNU 0.8 Dark Signal Jdark 10 2 50 10 electrons/pixel/sec pA/cm2 6.3 7 °C 10 50 electrons/pixel/sec 5 die8 DB 6 design9 Dark Signal Doubling Temperature Dark Signal Non-Uniformity DSNU Dynamic Range DR 72 74 Charge Transfer Efficiency CTE 0.99997 0.99999 Output Amplifier DC Offset Vodc Vrd Vrd + 0.5 Output Amplifier Sensitivity Output Amplifier Output Impedance Noise Floor Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. - design9 die8 Vrd + 1.0 die8 V - µV/e design9 design9 Vout/Ne 9 10 Zout 180 200 220 Ohms 15 20 electrons - ne 7 die8 For pixel binning applications, electron capacity up to 330000 can be achieved with modified CCD inputs. Each sensor may have to be optimized individually for these applications. Some performance parameters may be compromised to achieve the largest signals. Worst-case deviation from straight line fit, between 2% and 90% of Vsat. One Sigma deviation of a 128 x 128 sample when CCD illuminated uniformly at half of saturation. Average of all pixels with no illumination at 25 °C Average dark signal of any of 11 x 8 blocks within the sensor (each block is 128 x 128 pixels). 20log (Nsat / ne ) at nominal operating frequency and 25 °C. Noise floor is specified at the nominal pixel frequency and excludes any dark or pattern noises. It is dominated by the output amplifier power spectrum with a bandwidth = 5 * pixel rate. A parameter that is measured on every sensor during production testing. A parameter that is quantified during the design verification activity. www.truesenseimaging.com Revision 1.1 PS-0036 Pg 10 KAF-1603 Image Sensor Typical Performance Curves KAF-1603 Spectral Response 1 0.9 Absolute Quantum Efficiency 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 400 500 600 700 800 900 1000 Wavelength (nm) with microlens without microlens Figure 6: Typical Spectral Response www.truesenseimaging.com Revision 1.1 PS-0036 Pg 11 KAF-1603 Image Sensor Defect Definitions OPERATING CONDITIONS All tests performed at T = 25 °C SPECIFICATIONS Classification C2 Point Defect Cluster Defect Column Defect Total Zone A Total Zone A Total Zone A 10 5 4 2 0 0 1,1024 1536,1024 368,812 1168,812 Zone A Center 800 x 600 Pixels 368,212 1168,212 1,1 1536,1 Figure 7: Active Pixel Region Point Defects Dark: A pixel that deviates by more than 6% from neighboring pixels when illuminated to 70% of saturation. -- OR -- Bright: A pixel with a dark current greater than 5000 e /pixel/sec at 25 °C. Cluster Defect A grouping of not more than 5 adjacent point defects. Column Defect A grouping of more than 5 contiguous point defects along a single column. - A column containing a pixel with dark current greater than 12,000 e /pixel/sec (bright column). A column that does not meet the minimum vertical CCD charge capacity (low charge capacity column). - - A column which loses more than 250 e under 2 ke illumination (trap defect). Neighboring Pixels The surrounding 128 x 128 pixels or 64 column/rows. Defect Separation Column and cluster defects are separated by no less than two (2) pixels in any direction (excluding single pixel defects). www.truesenseimaging.com Revision 1.1 PS-0036 Pg 12 KAF-1603 Image Sensor Operation ABSOLUTE MAXIMUM RATINGS Description Symbol Minimum Maximum Units Notes Diode Pin Voltages Vdiode 0 20 V 1, 2 Gate Pin Voltages Vgate1 -16 Output Bias Current Output Load Capacitance Storage Temperature Humidity Notes: 1. 2. 3. 4. 5. 6. 16 V 1, 3, 6 Iout -10 mA 4 Cload 15 pF 4 T -20 80 °C RH 5 90 % 5 Referenced to pin Vsub or between each pin in this group. Includes pins: Vrd, Vdd, Vss, Vout. Includes pins: φV1, φV2, φH1, φH2, Vog, Vlg, φR. Avoid shorting output pins to ground or any low impedance source during operation. T = 25 °C. Excessive humidity will degrade MTTF. This sensor contains gate protection circuits to provide some protection against ESD events. The circuits will turn on when greater than 16 volts appears between any two gate pins. Permanent damage can result if excessive current is allowed to flow under these conditions. www.truesenseimaging.com Revision 1.1 PS-0036 Pg 13 KAF-1603 Image Sensor DC BIAS OPERATING CONDITIONS Description Reset Drain Symbol Minimum Nominal Maximum Units Maximum DC Current (mA) Vrd 10.5 11.0 11.5 V 0.01 Output Amplifier Return Vss 1.5 2.0 2.5 V -0.5 Output Amplifier Supply Vdd 14.5 15 15.5 V Iout Substrate Vsub 0 0 0 V 0.01 Output Gate Vog 3.75 4 5 V 0.01 Guard Ring Vlg 8.0 9.0 12.0 V 0.01 Video Output Current Iout -5 -10 mA - Note: 1. Notes 1 An output load sink must be applied to Vout to activate output amplifier - see Figure 4. AC OPERATING CONDITIONS Clock Levels Description Symbol Level Minimum Nominal Maximum Units Effective Capacitance Vertical CCD Clock - Phase 1 φV1 Low -10.5 -10.0 -9.5 V 6 nf (all φV1 pins) Vertical CCD Clock - Phase 1 φV1 High 0 0.5 1.0 V 6 nf (all φV1 pins) Vertical CCD Clock - Phase 2 φV2 Low -10.5 -10.0 -9.5 V 6 nf (all φV2 pins) Vertical CCD Clock - Phase 2 φV2 High 0.5 1.0 V 6 nf (all φV2 pins) Horizontal CCD Clock - Phase 1 φH1 Low -4.5 -4.0 -3.5 V 50 pF Horizontal CCD Clock - Phase 1 φH1 Amplitude 9.5 10.0 10.5 V 50 pF Horizontal CCD Clock - Phase 2 φH2 Low -4.5 -4.0 -3.5 V 50 pF Horizontal CCD Clock - Phase 2 φH2 Amplitude 9.5 10.0 10.5 V 50 pF Reset Clock φR Low -3.0 -2.0 -1.75 V 50 pF Reset Clock φR Amplitude 5.0 6.0 7.0 V 50 pF Notes: 1. 2. All pins draw less than 10 µA DC current. Capacitance values relative to VSUB. www.truesenseimaging.com Revision 1.1 PS-0036 Pg 14 KAF-1603 Image Sensor Timing REQUIREMENTS AND CHARACTERISTICS Description φH1, φH2 Clock Frequency Symbol Minimum fH Nominal Maximum Units Notes 4250 10 MHz 1, 2, 3 Pixel Period (I count) te 100 1 ns φH1, φH2 Setup Time tφHS 0.5 5 µs φV1, φV2 Clock Pulse Width tφV 4 20 µs 2 Reset Clock Width tφR 10 420 ns 4 treadout 178 ms 5 Readout Time Integration Time tint Line Time tline Notes: 1. 2. 3. 4. 5. 6. 7. 407 172.4 6 µs 7 50% duty cycle values. CTE may degrade above the nominal frequency. Rise and fall times (10/90% levels) should be limited to 5-10% of clock period. Cross-over of register clocks should be between 40-60% of amplitude. φR should be clocked continuously. treadout = (1032* tline). Integration time is user specified. Longer integration times will degrade noise performance due to dark signal fixed pattern and shot noise. tline = (3* tφV) + tφHS + (1564* te) + te. www.truesenseimaging.com Revision 1.1 PS-0036 Pg 15 KAF-1603 Image Sensor FRAME TIMING Frame Timing tint tReadout 1 Frame = 1032 Lines V1 Line V2 1 2 1031 1032 H1 H2 Figure 8: Frame Timing LINE TIMING (EACH OUTPUT) Line Timing Detail Pixel Timing Detail tV V1 tR R tV H1 V2 te tHS H1 1 count te H2 Vpix H2 Vout 1564 counts Vsat Vdark Vodc R Vsub Figure 9: Line Timing Line Content 1-10 11-14 15 - 1550 Photoactive Pixels 1551-1562 1563-1564 Dummy Pixels Vsat signal Vdark Saturated pixel video output Video output signal in no light situation, (Not zero due to Jdark and Hclock feedthrough) Vpix Vodc Vsub Pixel video output signal level, more electrons =less positive* Video level offset with respect to vsub Analog Ground * See Image Aquisition section (page 4) Dark Reference Pixels Figure 10: Timing Diagrams www.truesenseimaging.com Revision 1.1 PS-0036 Pg 16 KAF-1603 Image Sensor 3. Improper cleaning of the cover glass may damage these devices. Refer to Application Note Image Sensor Handling Best Practices. Storage and Handling STORAGE CONDITIONS Description Symbol Minimum Maximum Units Notes Storage Temperature TST -20 80 °C 1 Operating Temperature TOP -60 60 °C Notes: 1. Storage toward the maximum temperature will accelerate color filter degradation. ESD 1. This device contains limited protection against Electrostatic Discharge (ESD). ESD events may cause irreparable damage to a CCD image sensor either immediately or well after the ESD event occurred. Failure to protect the sensor from electrostatic discharge may affect device performance and reliability. 2. Devices should be handled in accordance with strict ESD procedures for Class 0 (<250 V per JESD22 Human Body Model test), or Class A (<200 V JESD22 Machine Model test) devices. Devices are shipped in static-safe containers and should only be handled at static-safe workstations. 3. See Application Note Image Sensor Handling Best Practices for proper handling and grounding procedures. This application note also contains workplace recommendations to minimize electrostatic discharge. 4. Store devices in containers made of electroconductive materials. COVER GLASS CARE AND CLEANLINESS 1. The cover glass is highly susceptible to particles and other contamination. Perform all assembly operations in a clean environment. 2. Touching the cover glass must be avoided. www.truesenseimaging.com ENVIRONMENTAL EXPOSURE 1. Extremely bright light can potentially harm CCD image sensors. Do not expose to strong sunlight for long periods of time, as the color filters and/or microlenses may become discolored. In addition, long time exposures to a static high contrast scene should be avoided. Localized changes in response may occur from color filter/microlens aging. For Interline devices, refer to Application Note Using Interline CCD Image Sensors in High Intensity Visible lighting Conditions. 2. Exposure to temperatures exceeding maximum specified levels should be avoided for storage and operation, as device performance and reliability may be affected. 3. Avoid sudden temperature changes. 4. Exposure to excessive humidity may affect device characteristics and may alter device performance and reliability, and therefore should be avoided. 5. Avoid storage of the product in the presence of dust or corrosive agents or gases, as deterioration of lead solderability may occur. It is advised that the solderability of the device leads be assessed after an extended period of storage, over one year. SOLDERING RECOMMENDATIONS 1. The soldering iron tip temperature is not to exceed 370 °C. Higher temperatures may alter device performance and reliability. 2. Flow soldering method is not recommended. Solder dipping can cause damage to the glass and harm the imaging capability of the device. Recommended method is by partial heating using a grounded 30 W soldering iron. Heat each pin for less than 2 seconds duration. Revision 1.1 PS-0036 Pg 17 KAF-1603 Image Sensor Mechanical Information COMPLETED ASSEMBLY Figure 11: Completed Assembly (1 of 2) www.truesenseimaging.com Revision 1.1 PS-0036 Pg 18 KAF-1603 Image Sensor Figure 12: Completed Assembly (2 of 2) www.truesenseimaging.com Revision 1.1 PS-0036 Pg 19 KAF-1603 Image Sensor Quality Assurance and Reliability QUALITY AND RELIABILITY All image sensors conform to the specifications stated in this document. This is accomplished through a combination of statistical process control and visual inspection and electrical testing at key points of the manufacturing process, using industry standard methods. Information concerning the quality assurance and reliability testing procedures and results are available from ON Semiconductor upon request. For further information refer to Application Note Quality and Reliability. REPLACEMENT All devices are warranted against failure in accordance with the Terms of Sale. Devices that fail due to mechanical and electrical damage caused by the customer will not be replaced. LIABILITY OF THE SUPPLIER A reject is defined as an image sensor that does not meet all of the specifications in this document upon receipt by the customer. Product liability is limited to the cost of the defective item, as defined in the Terms of Sale. LIABILITY OF THE CUSTOMER Damage from mishandling (scratches or breakage), electrostatic discharge (ESD), or other electrical misuse of the device beyond the stated operating or storage limits, which occurred after receipt of the sensor by the customer, shall be the responsibility of the customer. TEST DATA RETENTION Image sensors shall have an identifying number traceable to a test data file. Test data shall be kept for a period of 2 years after date of delivery. MECHANICAL The device assembly drawing is provided as a reference. ON Semiconductor reserves the right to change any information contained herein without notice. All information furnished by ON Semiconductor is believed to be accurate. Life Support Applications Policy ON Semiconductor image sensors are not authorized for and should not be used within Life Support Systems without the specific written consent of ON Semiconductor. www.truesenseimaging.com Revision 1.1 PS-0036 Pg 20 KAF-1603 Image Sensor Revision Changes MTD/PS-0666 Revision Number Description of Changes 1.0 Initial Release. 2.0 Remove Grade 3 device option (p9). Add cover glass configurations (p15). Update ESD (p10) and Cleanliness (p14) sections. 3.0 Updated format. Removed part numbers. 3.1 Correct table headings (p.14). 3.2 Remove Class 1 parts from the defect specification table 4.0 Removed part numbers 4H0342 and 4H0344 PS-0036 Revision Number Description of Changes 1.0 Initial release with new document number, updated branding and document template Updated Storage and Handling and Quality Assurance and Reliability sections 1.1 Updated branding www.truesenseimaging.com © 2014, Semiconductor Components Industries, LLC. Revision 1.1 PS-0036 Pg 21