NB3N502 D

NB3N502
14 MHz to 190 MHz PLL
Clock Multiplier
Description
The NB3N502 is a clock multiplier device that generates a low jitter,
TTL/CMOS level output clock which is a precise multiple of the
external input reference clock signal source. The device is a cost
efficient replacement for the crystal oscillators commonly used in
electronic systems. It accepts a standard fundamental mode crystal or
an external reference clock signal. Phase−Locked−Loop (PLL) design
techniques are used to produce an output clock up to 190 MHz with a
50% duty cycle. The NB3N502 can be programmed via two select
inputs (S0, S1) to provide an output clock (CLKOUT) at one of six
different multiples of the input frequency source, and at the same time
output the input aligned reference clock signal (REF).
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MARKING DIAGRAM
8
8
1
SOIC−8
D SUFFIX
CASE 751
3N502
A
L
Y
W
G
Features
•
•
•
•
•
•
•
•
•
•
•
Clock Output Frequency up to 190 MHz
Operating Range: VDD = 3 V to 5.5 V
Low Jitter Output of 15 ps One Sigma (rms)
Zero ppm Clock Multiplication Error
45% − 55% Duty Cycle
25 mA TTL−level Drive Outputs
Crystal Reference Input Range of 5 − 27 MHz
Input Clock Frequency Range of 2 − 50 MHz
Available in 8−pin SOIC Package or in Die Form
Full Industrial Temperature Range −40°C to 85°C
These are Pb−Free Devices
1
3N502
ALYW
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
NB3N502DG
SOIC−8
(Pb−Free)
98 Units / Rail
NB3N502DR2G
SOIC−8
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
VDD
Reference
Clock
X1/CLK
X2
Crystal
Oscillator
÷P
Charge
Pump
Phase
Detector
Multiplier
Select
÷M
VCO
TTL/
CMOS
Output
REF
TTL/
CMOS
Output
CLKOUT
Feedback
S1 S0
GND
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 1
Figure 1. NB3N502 Logic Diagram
1
Publication Order Number:
NB3N502/D
NB3N502
X1/CLK
1
8
X2
VDD
2
7
S1
GND
3
6
S0
REF
4
5
CLKOUT
Figure 2. Pin Configuration (Top View)
Table 1. CLOCK MULTIPLIER SELECT TABLE
S1*
S0**
Multiplier
L
L
2X
L
H
5X
M
L
3X
M
H
3.33X
H
L
4X
H
H
2.5X
L = GND
H = VDD
M = OPEN (unconnected)
* Pin S1 defaults to M when left open
** Pin S0 defaults to H when left open
Table 2. OUTPUT FREQUENCY EXAMPLES
Output Frequency (MHz)
20
25
33.3
48
50
54
64
66.66
75
100
108
120
135
Input Frequency (MHz)
10
10
10
16
20
13.5
16
20
15
20
27
24
27
S1, S0
0 ,0
1, 1
M, 1
M, 0
1, 1
1, 0
1, 0
M, 1
0, 1
0, 1
1, 0
0, 1
0, 1
Table 3. PIN DESCRIPTION
Pin #
Name
I/O
Description
1
X1/CLK
Input
2
VDD
Power Supply
Positive Supply Voltage (3 V to 5.5 V)
3
GND
Power Supply
0 V Ground.
4
REF
CMOS/TTL Output
Buffered Crystal Oscillator Clock Output
5
CLKOUT
CMOS/TTL Output
Clock Output
6
S0
CMOS/TTL Input
Multiplier Select Pin − Connect to VDD or GND. Internal Pull−up Resistor.
7
S1
Three−level Input
Multiplier Select Pin − Connect to VDD, GND or Float to M.
8
X2
Crystal Input
Crystal or External Reference Clock Input
Crystal Input − Do Not Connect when Providing an External Clock Reference
Table 4. ATTRIBUTES
Characteristic
ESD Protection
Value
Human Body Model
Machine Model
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
Flammability Rating
Oxygen Index: 28 to 34
Transistor Count
> 8 kV
> 600 V
Level 1
UL 94 V−0 @ 0.125 in
6700 Devices
Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test
1. For additional Moisture Sensitivity information, refer to Application Note AND8003/D.
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2
NB3N502
Table 5. MAXIMUM RATINGS
Symbol
VDD
Parameter
Condition 1
Positive Power Supply
Condition 2
Rating
Units
7
V
GND – 0.5 = VI =
VDD + 0.5
V
GND = 0 V
VI
Input Voltage
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction−to−Ambient)
qJC
Thermal Resistance (Junction−to−Case)
0 LFPM
500 LFPM
SOIC−8
SOIC−8
190
130
°C/W
°C/W
(Note 1)
SOIC−8
41 to 44
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
Table 6. DC CHARACTERISTICS (VDD = 3 V to 5.5 V unless otherwise noted, GND = 0 V, TA = −40°C to +85°C) (Note 2)
Symbol
Characteristic
Min
IDD
Power Supply Current
(unloaded CLKOUT operating at 100 MHz with 20 MHz crystal)
VOH
Output HIGH Voltage
IOH = −25 mA TTL High
VOL
Output LOW Voltage
IOL = 25 mA
VIH
Input HIGH Voltage, CLK only (pin 1)
VIL
Input LOW Voltage, CLK only (pin 1)
VIH
Input HIGH Voltage, S0, S1
VIL
Input LOW Voltage, S0, S1
VIM
Input level of S1 when open (Input Mid Point)
Cin
Input Capacitance, S0, S1
ISC
Output Short Circuit Current
Typ
Max
20
mA
2.4
V
0.4
(VDD / 2) + 1
Unit
VDD / 2
VDD / 2
V
V
(VDD / 2) −1
VDD – 0.5
V
V
0.5
V
VDD ÷ 2
V
4
pF
± 70
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Parameters are guaranteed by characterization and design, not tested in production.
Table 7. AC CHARACTERISTICS (VDD = 3 V to 5.5 V unless otherwise noted, GND = 0 V, TA = −40°C to +85°C) (Note 3)
Symbol
Characteristic
Min
Typ
Max
Unit
fXtal
Crystal Input Frequency
5
27
MHz
fCLK
Clock Input Frequency
2
50
MHz
fOUT
Output Frequency Range
VDD = 4.5 to 5.5 V (5.0 V ± 10%)
VDD = 3.0 to 3.6 V (3.3 V ± 10%)
14
14
190
120
MHz
MHz
Clock Output Duty Cycle at 1.5 V up to 190 MHz
45
55
%
DC
tjitter (rms)
tjitter (pk−to−pk)
tr/tf
50
Period Jitter (RMS, 1 σ)
15
ps
Total Period Jitter, (peak−to−peak)
±40
ps
Output rise/fall time (0.8 V to 2.0 V / 2.0 V to 0.8 V)
1
2
ns
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Parameters are guaranteed by characterization and design, not tested in production.
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3
NB3N502
APPLICATIONS INFORMATION
High Frequency CMOS/TTL Oscillators
Series Termination Resistor Recommendation
The NB3N502, along with a low frequency fundamental
mode crystal, can build a high frequency CMOS/TTL output
oscillator. For example, a 20 MHz crystal connected to the
NB3N502 with the 5X output selected (S1 = L, S0 = H)
produces a 100 MHz CMOS/TTL output clock.
A 33 W series terminating resistor can be used on the
CLKOUT pin.
Crystal Load Capacitors Selection Guide
The total on−chip capacitance is approximately 12 pF per
pin (CIN1 and CIN2). A parallel resonant, fundamental mode
crystal should be used.
The device crystal connections should include pads for
small capacitors from X1/CLK to ground and from X2 to
ground. These capacitors, CL1 and CL2, are used to adjust the
stray capacitance of the board to match the nominally
required crystal load capacitance (CLOAD (crystal)).
Because load capacitance can only be increased in this
trimming process, it is important to keep stray capacitance
to a minimum by using very short PCB traces (and no vias)
between the crystal and device. Crystal load capacitors, if
needed, must be connected from each of the pins X1 and X2
to ground. The load capacitance of the crystal (CLOAD
(crystal)) must be matched by total load capacitance of the
oscillator circuitry network, CINX, CSX and CLX, as seen by
the crystal (see Figure 3 and equations below).
External Components
Decoupling Instructions
In order to isolate the NB3N502 from system power
supply, noise de−coupling is required. The 0.01 mF
decoupling capacitor has to be connected between VDD and
GND on pins 2 and 3. It is recommended to place
de−coupling capacitors as close as possible to the NB3N502
device to minimize lead inductance. Control input pins can
be connected to device pins VDD or GND, or to the VDD and
GND planes on the board.
Internal
to Device
CLOAD1 = CIN1 + CS1 + CL1 [Total capacitance on X1/CLK]
CLOAD2 = CIN2 + CS2 + CL2 [Total capacitance on X2]
CIN1 [ CIN2 [ 12 pF (Typ) [Internal capacitance]
CS1 [ CS2 [ 5 pF (Typ) [External PCB stray capacitance]
CLOAD1,2 = 2 S CLOAD (Crystal)
CL2 = CLOAD2 − CIN2 − CS2 [External load capacitance on X2]
CL1 = CLOAD1 − CIN1 − CS1 [External load capacitance on X1/CLK]
R
G
CIN1
12 pF
CIN2
12 pF
X2
X1/CLK
CS1
CS2
CL1
CL2
Example 1: Equal stray capacitance on PCB
CLOAD (Crystal) = 18 pF (Specified by the crystal manufacturer)
CLOAD1 = CLOAD2 = 36 pF
CIN1 = CIN2 = 12 pF
CS1 = CS2 = 6 pF
CL1 = 36 − 12 − 6 = 18 pF
CL2 = 36 − 12 − 6 = 18 pF
Example 2: Different stray capacitance on PCB trace X1/CLK vs. X2
CLOAD (Crystal) = 18 pF
CLOAD1 = CLOAD2 = 36 pF
CIN1 = CIN2 = 12 pF
CS1 = 4 pF & CS2 = 8 pF
CL1 = 36 − 12 − 4 = 20 pF
CL2 = 36 − 12 − 8 = 16 pF
Crystal
Figure 3. Using a Crystal as Reference Clock
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NB3N502
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
−Y−
K
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
S
M
J
SOLDERING FOOTPRINT*
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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NB3N502/D