NCP51400 D

NCP51400, NCV51400
3 Amp VTT Termination
Regulator DDR1, DDR2,
DDR3, LPDDR3, DDR4
The NCP51400 is a source/sink Double Data Rate (DDR)
termination regulator specifically designed for low input voltage and
low−noise systems where space is a key consideration.
The NCP51400 maintains a fast transient response and only requires
a minimum output capacitance of 20 mF. The NCP51400 supports
a remote sensing function and all power requirements for DDR VTT
bus termination. The NCP51400 can also be used in low−power
chipsets and graphics processor cores that require dynamically
adjustable output voltages.
The NCP51400 is available in the thermally−efficient DFN10
Exposed Pad package, and is rated both Green and Pb−free.
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DFN10, 3x3, 0.5P
CASE 506CL
MARKING DIAGRAM
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
For Automotive Applications
Input Voltage Rails: Supports 2.5 V, 3.3 V and 5 V Rails
PVCC Voltage Range: 1.1 V to 3.5 V
Integrated Power MOSFETs
Fast Load−Transient Response
PGOOD − Logic output pin to Monitor VTT Regulation
EN − Logic input pin for Shutdown mode
VRI − Reference Input Allows for Flexible Input Tracking Either
Directly or Through Resistor Divider
Remote Sensing (VTTS)
Built−in Soft Start, Under Voltage Lockout and Over Current Limit
Thermal Shutdown
Small, Low−Profile 10−pin, 3x3 DFN Package
NCV51400MWTXG − Wettable Flank Option for Enhanced Optical
Inspection
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable*
These Devices are Pb−Free and are RoHS Compliant
51400
ALYWG
G
51400 = Specific Device Code
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
VRI
1
PVCC
2
VTT
3
PGND
VTTS
+
10
VCC
9
PGOOD
8
GND
4
7
EN
5
6
VRO
GND
Exposed Pad
Applications
•
•
•
•
•
•
•
•
ORDERING INFORMATION
DDR Memory Termination
Desktop PC’s, Notebooks, and Workstations
Servers and Networking equipment
Telecom/Datacom, GSM Base Station
Graphics Processor Core Supplies
Set Top Boxes, LCD−TV/PDP−TV, Copier/Printers
Chipset/RAM Supplies as Low as 0.5 V
Active Bus Termination
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 3
Device
Package
Shipping†
DFN10
(Pb−Free)
3000 / Tape &
Reel
NCP51400MNTXG
NCV51400MNTXG*
NCV51400MWTXG*
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Publication Order Number:
NCP51400/D
NCP51400, NCV51400
PIN FUNCTION DESCRIPTION
Pin Number
Pin Name
1
VRI
Pin Function
2
PVCC
3
VTT
4
PGND
Power Ground. Internally connected to the output sink MOSFET.
5
VTTS
VTT Sense Input. The VTTS pin provides accurate remote feedback sensing of VTT. Connect VTTS to the
remote DDR termination bypass capacitors.
6
VRO
Independent Buffered VTT Reference Output. Sources and sinks over 5 mA. Connect to GND thru
0.1 mF ceramic capacitor.
7
EN
Shutdown Control Input. CMOS compatible input. Logic high = enable, logic low = shutdown. Connect
to VDDQ for normal operation.
8
GND
9
PGOOD
10
VCC
VTT External Reference Input ( set to VDDQ / 2 thru resistor network ).
Power input. Internally connected to the output source MOSFET.
Power Output of the Linear Regulator.
Common Ground.
Power Good (Open Drain output).
Analog power supply input. Connect to GND thru a 1 − 4.7 mF ceramic capacitor.
THERMAL
PAD
Pad for thermal connection. The exposed pad must be connected to the ground plane using multiple
vias for maximum power dissipation performance.
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
−0.3 to 6.0
V
EN, PGOOD (Note 1)
−0.3 to 6.0
V
PGND to GND (Note 1)
−0.3 to +0.3
V
TSTG
−55 to 150
°C
TJ
150
°C
ESDHBM
2000
V
VCC, PVCC, VTT, VTTS, VRI, VRO (Note 1)
Storage Temperature
Operating Junction Temperature Range
ESD Capability, Human Body Model (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following method:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
DISSIPATION RATINGS
Package
TA = 255C Power Rating
Derating Factor above
TA = 255C
TA = +855C Power Rating
10−Pin DFN
1.92 W
19 mW/°C
0.79 W
RECOMMENED OPERATING CONDITIONS
Rating
Symbol
Value
Unit
Supply Voltage
VCC
2.375 to 5.5
V
Voltage Range
VRO
−0.1 to 1.8
V
VRI
0.5 to 1.8
PVCC, VTT, VTTS, EN, PGOOD
−0.1 to 3.5
PGND
−0.1 to +0.1
TA
−40 to +125
Operating Free−Air Temperature
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NCP51400, NCV51400
ELECTRICAL CHARACTERISTICS
−40°C ≤ TA ≤ 125°C; VCC = 3.3 V; PVCC = 1.8 V; VRI = VTTS = 0.9 V; EN = VCC; COUT = 3 x 10 mF (Ceramic); unless otherwise noted.
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
0.7
1
mA
mA
Supply Current
VCC Supply Current
TA = +25°C, EN = 3.3 V, No Load
VCC Shutdown Current
TA = +25°C, EN = 0 V, VRI = 0 V, No Load
IVCC
IVCC SHD
TA = +25°C, EN = 0 V, VRI > 0.4 V, No Load
VCC UVLO Threshold
Wake−up, TA = +25°C
VUVLO
2.15
Hysteresis
65
80
200
400
2.3
2.375
50
PVCC Supply Current
TA = +25°C, EN = 3.3 V, No Load
PVCC Shutdown Current
TA = +25°C, EN = 0 V, No Load
V
mV
IPVCC
1
50
mA
IPVCC SHD
0.1
50
mA
VTT Output
VTT Output DC Voltage
VTT Output Voltage Tolerance to
VRO
PVCC = 1.50 V, VRO = 0.75 V, ITT = 0 A
PVCC = 1.20 V, VRO = 0.60 V, ITT = 0 A
0.60
PVCC = 1.50 V, VRO = 0.75 V,
−2 A < ITT < 2 A
±18
PVCC = 1.35 V, VRO = 0.675 V,
−2 A < ITT < 2 A
±20
PVCC = 1.20 V, VRO = 0.60 V, −2 A < ITT <
2A
±20
VTTS = 90% * VRO
Sink Current Limit
VTTS = 110% * VRO
3
VRI = 0 V, VTT = 0.3 V, EN = 0 V, TA = +25°C
mV
4.5
3.5
Soft−start Current Limit Timeout
V
0.75
0.675
Source Current Limit
Discharge MOSFET On−resistance
VOS
PVCC = 1.35 V, VRO = 0.675 V, ITT = 0 A
5.5
TSS
200
RDIS
18
A
A
ms
25
W
1.8
V
+1
mA
435
mV
mV
VRI − Input Reference
VRI Voltage Range
VRI
VRI Input−bias Current
EN = 3.3 V
VRI UVLO Voltage
VRI rising
VRI UVLO
Hysteresis
VRI HYS
0.5
IRI
360
390
60
VRO − Output Reference
VRO Voltage
VRO Voltage Tolerance to VRI
VRI
V
−10 mA < IRO < 10 mA, VRI = 1.25 V
−15
+15
−10 mA < IRO < 10 mA, VRI = 0.9 V
−15
+15
−10 mA < IRO < 10 mA, VRI = 0.75 V
−15
+15
−10 mA < IRO < 10 mA, VRI = 0.6 V
−15
+15
VRO Source Current Limit
VRO = 0 V
10
40
mA
VRO Sink Current Limit
VRO = 0 V
10
40
mA
PGOOD − Powergood Comparator
PGOOD Lower Threshold
(with respect to VRO)
−23.5
%
−20%
−17.5
%
PGOOD Upper Threshold
(with respect to VRO)
17.5%
20%
23.5%
PGOOD Hysteresis
PGOOD Start−up Delay
V/V
5%
Start−up rising edge, VTTS within 15% of
VRO
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3
2
ms
NCP51400, NCV51400
ELECTRICAL CHARACTERISTICS
−40°C ≤ TA ≤ 125°C; VCC = 3.3 V; PVCC = 1.8 V; VRI = VTTS = 0.9 V; EN = VCC; COUT = 3 x 10 mF (Ceramic); unless otherwise noted.
Parameter
Conditions
Symbol
PGOOD Leakage Current
VTTS = VRI (PGOOD = True)
PGOOD = VCC + 0.2 V
PGOOD = False Delay
VTTS is beyond ±20% PGOOD trip thresholds
PGOOD Output Low Voltage
IGOOD = 4 mA
Min
Typ
Max
Unit
1
mA
ms
10
0.4
V
EN − Enable Logic
Logic Input Threshold
EN Logic high
VIH
EN Logic low
Hysteresis Voltage
EN pin
Logic Leakage Current
EN pin, TA = +25°C
V
1.7
VIL
0.3
VENHYS
IILEAK
0.5
−1
V
+1
mA
Thermal Shutdown
Thermal Shutdown Temperature
TSD
150
°C
Thermal Shutdown Hysteresis
TSH
25
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 1. Typical DDR−3 Application Schematic
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4
NCP51400, NCV51400
Figure 2. Block Diagram
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5
NCP51400, NCV51400
General
PGOOD − PowerGood
The NCP51400 is a sink/source tracking termination
regulator specifically designed for low input voltage and
low external component count systems where space is a key
application parameter. The NCP51400 integrates a
high−performance, low−dropout (LDO) linear regulator
that is capable of both sourcing and sinking current. The
LDO regulator employs a fast feedback loop so that small
ceramic capacitors can be used to support the fast load
transient response. To achieve tight regulation with
minimum effect of trace resistance, a remote sensing
terminal, VTTS, should be connected to the positive terminal
of the output capacitors as a separate trace from the high
current path from VTT.
The NCP51400 provides an open−drain PGOOD output
that goes high when the VTT output is within ±20% of VRO.
PGOOD de−asserts within 10 ms after the output exceeds the
limits of the PowerGood window. During initial VTT
startup, PGOOD asserts high 2 ms after the VTT enters power
good window. Because PGOOD is an open−drain output, a
100 kW, pull−up resistor between PGOOD and a stable active
supply voltage rail is required.
The LDO has a constant over−current limit (OCL). Note
that the OCL level reduces by one−half when the output
voltage is not within the power good window. This reduction
is non−latch protection. For VCC under−voltage lockout
(UVLO) protection, the NCP51400 monitors VCC voltage.
When the VCC voltage is lower than the UVLO threshold
voltage, both the VTT and VRO regulators are powered off.
This shutdown is also non−latch protection.
VRI − Generation of Internal Voltage Reference
The output voltage, VTT, is regulated to VRO. When VRI
is configured for standard DDR termination applications,
VRI can be set by an external equivalent ratio voltage divider
connected to the memory supply bus (VDDQ). The
NCP51400 supports VRI voltage from 0.5 V to 1.8 V,
making it versatile and ideal for many types of low−power
LDO applications.
Thermal Shutdown with Hysteresis
If the NCP51400 is to operate in elevated temperatures for
long durations, care should be taken to ensure that the
maximum operating junction temperature is not exceeded.
To guarantee safe operation, the NCP51400 provides
on−chip thermal shutdown protection. When the chip
junction temperature exceeds 150°C, the part will shutdown.
When the junction temperature falls back to 125°C, the
device resumes normal operation. If the junction
temperature exceeds the thermal shutdown threshold then
the VTT and VRO regulators are both shut off, discharged by
the internal discharge MOSFETs. The shutdown is a
non−latch protection.
VRO − Reference Output
When it is configured for DDR termination applications,
VRO generates the DDR VTT reference voltage for the
memory application. It is capable of supporting both a
sourcing and sinking load of 10 mA. VRO becomes active
when VRI voltage rises to 435 mV and VCC is above the
UVLO threshold. When VRO is less than 360 mV, it is
disabled and subsequently discharges to GND through an
internal 10 kW MOSFET. VRO is independent of the EN pin
state.
Tracking Startup and Shutdown
The NCP51400 also supports tracking startup and
shutdown when EN is tied directly to the system bus and not
used to turn on or turn off the device. During tracking
startup, VTT follows VRO once VRI voltage is greater than
435 mV. VRI follows the rise of VDDQ memory supply rail
via a voltage divider. The typical soft−start time for the
VDDQ memory supply rail is approximately 3 ms, however
it may vary depending on the system configuration. The SS
time of the VTT output no longer depends on the OCL
setting, but it is a function of the SS time of the VDDQ
memory supply rail. PGOOD is asserted 2 ms after VTT is
within ±20% of VRO. During tracking shutdown, VTT falls
following VRO until VRO reaches 360 mV. Once VRO falls
below 360 mV, the internal discharge MOSFETs are turned
on and quickly discharge both VRO and VTT to GND.
PGOOD is de−asserted once VTT is beyond the ±20% range
of VRO.
Soft Start
The soft−start function of the VTT pin is achieved via a
current clamp. The current clamp allows the output
capacitors to be charged with low and constant current,
providing a linear ramp−up of the output voltage. When
VTT is outside of the power good window, the current
clamp level is one−half of the full over−current limit (OCL)
level. When VTT rises or falls within the PGOOD window, the
current clamp level switches to the full OCL level.
The soft−start function is completely symmetrical; it
works not only from GND to the VRO voltage but also from
PVCC to the VRO voltage.
EN − Enable Control
When EN is driven high, the NCP51400 VTT regulator
begins normal operation. When EN is driven low, VTT is
discharges to GND through an internal 18 W MOSFET.
VREF remains on when EN is driven low.
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NCP51400, NCV51400
PACKAGE DIMENSIONS
DFN10, 3x3, 0.5P
CASE 506CL
ISSUE O
D
L
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM THE
TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG
SIDE EDGE. MOLD FLASHING MAY NOT EXCEED 30
MICRONS ONTO BOTTOM SURFACE OF TERMINAL b.
6. FOR DEVICE OPN CONTAINING W OPTION, DETAIL B
ALTERNATE CONSTRUCTION IS NOT APPLICABLE.
L
L1
PIN ONE
REFERENCE
0.10 C
2X
ÇÇÇ
ÇÇÇ
ÇÇÇ
0.10 C
2X
0.05 C
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTIONS
E
ÉÉ
ÇÇ
EXPOSED Cu
TOP VIEW
MOLD CMPD
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
DETAIL B
ALTERNATE
CONSTRUCTIONS
DETAIL B
A
10X
0.05 C
NOTE 4
SIDE VIEW
(A3)
A1
C
SEATING
PLANE
RECOMMENDED
SOLDERING FOOTPRINT*
D2
DETAIL A
1
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.20
0.30
3.00 BSC
2.40
2.60
3.00 BSC
1.40
1.60
0.50 BSC
0.25
−−−
0.25
0.45
0.00
0.03
10X
e
10X
L
2.70
0.57
5
E2
1.70 3.30
PACKAGE
OUTLINE
K
10
6
10X
1
b
0.10 C A B
BOTTOM VIEW
0.05 C
0.50
PITCH
NOTE 3
10X
0.32
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NCP51400/D