STK984-190-E Advance Information 30A/40V MOSFET Module in Compact DIP package The STK984-190-E is a MOSFET module containing 6 MOSFETs in a three-phase bridge (B6) configuration and a seventh MOSFET used as a reverse battery protection switch. The compact module is 29.6mm × 18.2mm and is 4.3mm high (see package drawing for specification details). The MOSFET module uses a DBC substrate for excellent thermal performance. The module is suitable for 12V automotive and industrial applications with motors rated up to 300W. www.onsemi.com PACKAGE PICTURE Features • • • • • Three-phase MOSFET bridge with reverse battery protection switch AECQ101 qualified MOSFETs and PPAP capable. Compact 29.6mm × 18.2mm dual in-line package Motor power up to 300W for 12V systems 40V MOSFETs with 30A continuous and 85A pulse current ratings • RDS(ON) = 9.5 mohm max • QGD = 9.8 nC typical Typical Applications MARKING DIAGRAM • Automotive Pumps • Automotive Fans • 12V Industrial Motors STK984-190-E = Specific Device Code A = Year B = Month C = Production Site DD = Factory Lot Code Device marking is on package underside PIN CONNECTIONS See Package Drawing at the end of this datasheet. ORDERING INFORMATION Device STK984-190E Package MODULE SPCM24 29.6x18.2 DIP S3 Shipping Tube of 16 Figure 1: Functional Diagram This document contains information on a new product. Specifications and information herein are subject to change without notice. © Semiconductor Components Industries, LLC, 2016 February 2016- Rev. P1 1 Publication Order Number: STK984-190-E/D STK984-190-E VBAT VS CHP CP1N CP1P CP2N CP2P VGL LV8907 VCC STK984-190 V3RI COM V3RO WH VH PWMIN UH LIN_PWMIN TXD WOUT RXD VOUT CSB UOUT WL SCLK VL SI SO UL EN PWMIN Key SUL FG SVL DIAG SWL WAKE RF TEST TH TH RFSENS LGND AGND PGND V3RI Figure 2: Application Schematic Example www.onsemi.com 2 STK984-190-E Figure 3: Block Diagram www.onsemi.com 3 STK984-190-E PIN FUNCTION DESCRIPTION Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 17 18 19 20 22 26 28 32 34 38 Name W W W PG PG PG V V V U U U VB2 VB2 VB1 VB1 VB1 COM HINU LINU HINV HINW LINV LINW Description W Phase Output W Phase Output W Phase Output Power Ground Power Ground Power Ground V Phase Output V Phase Output V Phase Output U Phase Output U Phase Output U Phase Output Positive Supply for 3-phase bridge Positive Supply for 3-phase bridge Positive Supply to reverse battery protect switch Positive Supply to reverse battery protect switch Positive Supply to reverse battery protect switch Gate of reverse battery protect switch High side gate phase U Low side gate phase U High side gate phase V High side gate phase W Low side gate phase V Low side gate phase W Note: Pins 15, 16, 21, 23, 24, 25, 27, 29, 30, 31, 33, 35, 36, 37 are not present Table 1: Pin Function Description www.onsemi.com 4 STK984-190-E ABSOLUTE MAXIMUM RATINGS (Notes 1,2) Rating Symbol Conditions Value Unit 40 V +/−20 V Drain−to−Source Voltage VDSS Control Input Voltage Vin max COM to VB1; HINx to x; LINx to PG (x=U,V,W) Continuous Drain Current ID max DC 30 A Pulsed Drain Current ID pulse Pulse ( tp = 10 μs) 85 A Power Dissipation Pd max Each channel Tc=25°C 36 W Junction Temperature Tj max 175 °C Operating Temperature ESD Capability, Human Body Model ESD Capability, Machine Model Tc −40 to 150 °C ESDHBM 1000 V ESDMM 200 V Storage Temperature Tstg Package mounting torque 1. 2. −40 to 150 °C 0.6 Nm Case mounting screw. Thermal Grease Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. RECOMMENDED OPERATING RANGES (Note 3) Rating Min Typ Max Unit Supply Voltage VBmax VB1 to PG; VB2 to PG 8 13.5 18 V Control Input Voltage Vin - 10 18 V Drain Current ID COM to VB1; HINx to x; LINx to PG (x=U,V,W) Tc=125°C , VGS=10V - - 25 A Operating Substrate Temperature Tc Module Substrate Temperature −40 - 125 °C ‘M3’ type screw. Thermal Grease. 0.4 - 0.6 Nm Package mounting torque 3. Symbol Test Conditions Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 5 STK984-190-E ELECTRICAL CHARACTERISTICS (Note 4) at Tc=25°C Parameter Symbol Θj-c Chip-Case Resistance 4. 5. Test Conditions Each MOSFET die to outside of case VGS=0V, ID=250µA Min Typ Max Unit - - 4.1 °C/W 40 - - V Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VBR(DSS) VBR(DSS) /TJ IDSS Note 5 - 40.8 - mV/°C VGS=0V, VDS=40V - - 1.0 μA Gate-to-Source Leakage Current IGSS VGS=0V, VGS=±20V ±100 nA Gate Threshold Voltage VGS(TH) Negative Gate Threshold Voltage Temperature Coefficient Drain-to-source ON resistance VGS(TH)// TJ RDS(ON) 1.5 - 3.5 V Note 5 - 7 - mV/°C VGS=10V, ID=15A, Note 5 - 7.6 - mΩ VGS=5V, ID=10A, Note 5 - 10.9 - mΩ - 0.285 0.38 V - 8.54 - S - 1725 - pF Output Saturation Voltage / Each FET (incudes the wiring resistance) VDS(sat) Forward Transconductance gFS VGS=10V, ID=30A VB2 to VB1, VB2 to U/V/W; U/V/W to PG Note 4 Input Capacitance Ciss VGS=0V, VDS=25V, 10MHz, Note 5 Output Capacitance Coss - 220 - pF Reverse transfer capacitance Crss - 160 - pF Total Gate Charge QG(TOT) - 33 - nC Threshold Gate Charge QG(TH) - 2.0 - nC Gate-to-Source Charge QGS - 7.2 - nC Gate-to-Drain Charge QGD - 9.8 - nC Turn-on delay time td(on) - 10.2 - ns Rise time tr - 17.9 - ns Turn-off delay time td(off) - 22.9 - ns Fall time tf - 4.5 - ns Forward Diode Voltage VSD VGS=10V, ISD=10A, Note 5 - 0.83 - V Reverse Recovery Time tRR Charge Time tA VGS=0V, ISD=30A, dISD/dt = 100A/µs Note 5 Discharge Time Reverse Recovery Charge VGS=10V, VDS=32V, ID=30A, Note 5 VGS=10V, VDS=32V, ID=30A, RG=2.5Ω, Note 4 - 24.8 - ns - 14.6 - ns tB - 10.2 - ns QRR - 15.5 - nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Typical data taken from packaged discrete device characteristics www.onsemi.com 6 STK984-190-E TYPICAL CHARACTERISTICS Figure 5 ID versus VDS for different temperatures (VGS=10V) Figure 4 ID versus VDS for different VGS values (Tj=175°C) Figure 9 ISD versus VSD for different temperatures Figure 8 Current Rating Figure 7 Switching losses versus drain current Figure 6 Switching losses versus gate resistance Tj=175˚C, Id=30A, L=40uH Tj=175˚C, Id=30A, Rg=51Ω, L=40uH www.onsemi.com 7 STK984-190-E TYPICAL CHARACTERISTICS Figure 13 Thermal Impedance Figure 12 Safe Operating Area Figure 10 Gate Charge Characteristics Figure 11 Capacitance Characteristics www.onsemi.com 8 STK984-190-E Mounting Instructions Item Recommended Condition Pitch 26.0±0.1mm (Please refer to Package Outline Diagram) Screw Diameter : M3 Screw head types: pan head, truss head, binding head Washer Plane washer dimensions (Figure 14) D = 7mm, d = 3.2mm and t = 0.5mm JIS B 1256 Heat sink Torque Grease Material: Aluminum or Copper Warpage (the surface that contacts IPM ) : −50 to 50 μm Screw holes must be countersunk. No contamination on the heat sink surface that contacts IPM. Temporary tightening : 50 to 60 % of final tightening on first screw Temporary tightening : 50 to 60 % of final tightening on second screw Final tightening : 0.4 to 0.6Nm on first screw Final tightening : 0.4 to 0.6Nm on second screw Silicone grease. Thickness : 50 to 100 μm Uniformly apply silicon grease to whole back. Thermal foils are only recommended after careful evaluation. Thickness, stiffness and compressibility parameters have a strong influence on performance. Figure 14: Module Mounting details: components; washer drawing; need for even spreading of thermal grease www.onsemi.com 9 STK984-190-E PACKAGE DIMENSIONS unit : mm www.onsemi.com 10 STK984-190-E ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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