Small Signal Transistor Arrays UN227 Transistor array to drive the small motor ■ Features ■ Applications ● For motor drives Small motor drive circuits in general ■ Absolute Maximum Ratings 10 5 6 12° 12° 45° (Ta=25±3˚C) Symbol Ratings Unit Collector to base voltage VCBO ±10 V Collector to emitter voltage VCEO ±10 V Emitter to base voltage VEBO ±7 V IC ±1.5 A Peak collector current ICP ±2 A Total power dissipation PT* 0.5 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Note: ± marks used above: +: NPN part, –: PNP part * TC = 25˚C only when the elements are active 6° 6° Parameter Collector current 1 0 to 0.1 0.5 ● 1.5±0.1 0.8 5.5±0.3 8–0.9±0.1 ● +0.1 ● 0.2 –0.05 ● Unit: mm Small and lightweight Low power consumption Low-voltage drive With 8 elements incorporated 6.5±0.3 10–0.4±0.1 ● 0.5±0.2 7.7±0.3 SO–10C Package Internal Connection 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 1 Small Signal Transistor Arrays ■ Electrical Characteristics Parameter 2 (Ta=25˚C) Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector cutoff current ICBO Collector cutoff current ICEO Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance Cob Forward voltage VF *Pulse measurement UN227 Conditions min (NPN) IC = 10µA, IE = 0 10 (PNP) IC = –10µA, IE = 0 –10 (NPN) IC = 1mA, IB = 0 10 (PNP) IC = –1mA, IB = 0 –10 (NPN) IE = 10µA, IC = 0 7 (PNP) IE = –10µA, IC = 0 –7 typ max Unit V V V (NPN) VCB = 7V, IE = 0 1 (PNP) VCB = –7V, IE = 0 –1 (NPN) VCE = 10V, IB = 0 2 (PNP) VCE = –10V, IB = 0 –2 (NPN) VCE = 1V, IC = 400mA* 200 700 (PNP) VCE = –1V, IC = –400mA* 200 700 (NPN) IC = 1A, IB = 25mA* 0.25 (PNP) IC = –1A, IB = –25mA* – 0.35 (NPN) VCB = 6V, IE = –50mA, f = 200MHz 120 (PNP) VCB = –6V, IE = 50mA, f = 200MHz 120 (NPN) VCB = 6V, IE = 0, f = 1MHz 25 (NPN) VCB = –6V, IE = 0, f = 1MHz 35 µA µA V MHz pF (NPN) IF = 0.5A 1.3 (PNP) IF = – 0.5A –1.3 V