NCV7342 D

NCV7342
High Speed Low Power CAN
Transceiver
Description
The NCV7342 CAN transceiver is the interface between a
controller area network (CAN) protocol controller and the physical
bus and may be used in both 12 V and 24 V systems. The transceiver
provides differential transmit capability to the bus and differential
receive capability to the CAN controller.
The NCV7342 is an addition to the CAN high−speed transceiver
family complementing NCV734x CAN stand−alone transceivers and
previous generations such as AMIS42665, AMIS3066x, etc.
Due to the wide common−mode voltage range of the receiver inputs
and other design features, the NCV7342 is able to reach outstanding
levels of electromagnetic susceptibility (EMS). Similarly, extremely
low electromagnetic emission (EME) is achieved by the excellent
matching of the output signals.
www.onsemi.com
8
1
1
DFN8
MW SUFFIX
CASE 506DG
SOIC−8
D SUFFIX
CASE 751AZ
MARKING DIAGRAMS
8
Features
• Compatible with the ISO 11898−2, ISO 11898−5 Standards
• High Speed (up to 1 Mbps)
• VIO Pin on NCV7342−3 Version Allowing Direct Interfacing with
•
•
•
•
•
Quality
• Wettable Flank Package for Enhanced Optical Inspection
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
NV7342−x
ALYWG
G
1
NV7342−x= Specific Device Code
x = 0 or 3
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENTS
TxD
GND
VCC
RxD
8
1
2
3
4
TxD
1
GND
2
VCC
3
RxD
4
NV7342−x
ALYWG
G
•
•
•
•
•
•
•
3 V to 5 V Microcontrollers
VSPLIT Pin on NCV7342−0 Version for Bus Common Mode
Stabilization
Very Low Current Consumption in Standby Mode with Wake−up via
the Bus
Excellent Electromagnetic Susceptibility (EMS) Level Over Full
Frequency Range. Very Low Electromagnetic Emissions (EME) Low
EME Also Without Common Mode (CM) Choke
Bus Pins Protected Against >15 kV System ESD Pulses
Transmit Data (TxD) Dominant Time−out Function
Bus Dominant Time−out function in Standby Mode
Under All Supply Condition the Chip Behaves Predictably
No Disturbance of the Bus Lines with an Unpowered Node
Thermal Protection
Bus Pins Protected Against Transients in an Automotive
Environment
Bus Pins Short Circuit Proof to Supply Voltage and Ground
These are Pb−Free Devices
1
NV7342−x
ALYW G
G
7
6
5
STB
CANH
CANL
VSPLIT (−0)
VIO (−3)
8 STB
7 CANH
EP Flag
6 CANL
5 VIO
(Top Views)
Typical Applications
ORDERING INFORMATION
• Automotive
• Industrial Networks
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 4
1
Publication Order Number:
NCV7342/D
NCV7342
Table 1. KEY TECHNICAL CHARACTERISTICS AND OPERATING RANGES
Symbol
VCC
VUVVcc
Max
Unit
Power supply voltage
Parameter
Conditions
Min
4.5
Typ
5.5
V
Undervoltage detection voltage
on pin VCC (NCV7342−3 only)
3.5
4.5
V
ICC
Supply current
Dominant; VTxD = 0 V
Recessive; VTxD = VIO
75
10
mA
ICCS
Supply current in standby mode
including VIO current
TJ v 100°C, (Note 1)
15
mA
VCANH
DC voltage at pin CANH
0 < VCC < 5.5 V; no time limit
−50
+50
V
VCANL
DC voltage at pin CANL
0 < VCC < 5.5 V; no time limit
−50
+50
V
VCANH,L
DC voltage between CANH and
CANL pin
0 < VCC < 5.5 V
−50
+50
V
VESD
Electrostatic discharge voltage
IEC 61000−4−2 at pins CANH
and CANL
−15
15
kV
VO(dif)(bus_dom)
Differential bus output voltage in
dominant state
45 W < RLT < 65 W
1.5
3
V
CM−range
Input common−mode range for
comparator
Guaranteed differential receiver
threshold and leakage current
−35
+35
V
Cload
Load capacitance on IC outputs
15
pF
tpd_dr
Propagation delay TxD to RxD
dominant to recessive transition
See Figure 8
Ci = 100 pF between CANH to
CANL, CRxD = 15 pF
50
100
230
ns
tpd_rd
Propagation delay TxD to RxD
recessive to dominant transition
See Figure 8
Ci = 100 pF between CANH to
CANL, CRxD = 15 pF
50
120
230
ns
150
°C
TJ
Junction temperature
−40
1. Not tested in production. Guaranteed by design and prototype evaluation.
www.onsemi.com
2
NCV7342
BLOCK DIAGRAMS
VCC
3
VCC
NCV7342−0
7
Thermal
TxD
VCC
Timer
5
VCC
8
STB
VSPLIT
VSPLIT
Mode &
Driver
Wake−up
Control
6
CANL
Control
4
Wake−up
RxD
CANH
Shutdown
1
COMP
Filter
2
GND
COMP
RB 20121109
Figure 1. NCV7342−0 Block Diagram
www.onsemi.com
3
NCV7342
VIO
VCC
3
5
VIO
NCV7342−3
7
Thermal
CANH
Shutdown
1
TxD
Timer
VIO
8
STB
Mode &
Driver
Wake−up
Control
6
CANL
Control
4
Wake−up
RxD
COMP
Filter
2
GND
COMP
RB 20121109
Figure 2. NCV7342−3 Block Diagram
www.onsemi.com
4
NCV7342
TYPICAL APPLICATION
VBAT
5V−reg
3V−reg
VIO
VIO
VCC
3
5
RLT = 60 W
7
CANH
STB
8
Micro
CLT = 4.7 nF CAN
BUS
NCV7342−3
RxD
Controller
4
TxD
6
1
CANL
RLT = 60 W
2
GND
GND
RB20120816
Figure 3. Application Diagram NCV7342−3
VBAT
IN
OUT
5V−reg
VCC
VCC
3
STB
8
RxD
4
TxD
NCV7342−0
Micro
Controller
7
5
1
RB20120816
6
RLT = 60 W
CANH
CANL
RLT = 60 W
2
GND
CLT = 4.7 nF
VSPLIT
GND
Figure 4. Application Diagram NCV7342−0
Table 2. PIN FUNCTION DESCRIPTION
Pin
Name
1
TxD
Description
Transmit data input; Low input Ù dominant driver; internal pull−up current
2
GND
Ground
3
VCC
Supply voltage
4
RxD
Receive data output; dominant transmitter Ù Low output
5
5
VIO
VSPLIT
Input/Output pins supply voltage. On NCV7342−3 only
Common−mode stabilization output. On NCV7342−0 only
6
CANL
Low−level CAN bus line (Low in dominant mode)
7
CANH
High−level CAN bus line (High in dominant mode)
8
STB
EP
Exposed Pad
Standby mode control input
Connect to GND or left floating
www.onsemi.com
5
CAN
BUS
NCV7342
FUNCTIONAL DESCRIPTION
monitors the bus lines for CAN bus activity. The bus lines
are terminated to ground and supply current is reduced to a
minimum, typically 10 mA. When a wake−up request is
detected by the low−power differential receiver, the signal
is first filtered and then verified as a valid wake signal after
a time period of tdwakerd. The RxD pin is driven Low by the
transceiver to inform the controller of the wake−up request.
NCV7342 has two versions which differ from each other
only by function of pin 5.
NCV7342−0: Pin 5 is common mode stabilization output
VSPLIT. (see Figure 4) This version is full replacement of
NCV7340.
NCV7342−3: Pin 5 is VIO pin, which is supply pin for
transceiver digital inputs/output (supplying pins TxD, RxD,
STB) The VIO pin should be connected to microcontroller
supply pin. By using VIO supply pin shared with
microcontroller, the I/O levels between microcontroller and
transceiver are properly adjusted. This adjustment allows
communication between 3 V microcontroller and the
transceiver. (See Figure 3)
VIO Supply Pin
The VIO pin (available only on NCV7342−3 version)
should be connected to microcontroller supply pin. By using
VIO supply pin shared with microcontroller the I/O levels
between microcontroller and transceiver are properly
adjusted. See Figure 3. Pin VIO also provides the internal
supply voltage for low−power differential receiver of the
transceiver. This allows detection of wake−up request even
when there is no supply voltage on Pin VCC.
Operating Modes
NCV7342 provides two modes of operation as illustrated
in Table 3. These modes are selectable through pin STB.
Split Circuit
The VSPLIT pin (available on NCV7342−0 version) is
operational only in normal mode. In standby mode this pin
is floating. The VSPLIT can be connected as shown in
Figure 4 or, if it’s not used, can be left floating. Its purpose
is to provide a stabilized DC voltage of 0.5 · VCC to the bus
reducing possible steps in the common−mode signal,
therefore reducing EME. These unwanted steps could be
caused by an unpowered node on the network with excessive
leakage current from the bus that shifts the recessive voltage
from its nominal 0.5 · VCC voltage.
Table 3. OPERATING MODES
Pin RxD
Pin
STB
Mode
Low
Normal
Bus dominant
Bus recessive
High
Standby
Wake−up
request
detected
No wake−up
request detected
Low
High
Normal Mode
In normal mode, the transceiver is able to communicate
via the bus lines. The signals are transmitted and received to
the CAN controller via the pins TxD and RxD. The slopes
on the bus lines outputs are optimized to give extremely low
EME.
Wake−up
When a valid wake−up (dominant state longer than tWake)
is received during the standby mode, the RxD pin is driven
Low after tdwakerd. The wake−up detection is not latched:
RxD returns to High state after tdwakedr when the bus signal
is released back to recessive – see Figure 5.
Standby Mode
In standby mode both the transmitter and receiver are
disabled and a very low−power differential receiver
>tWake
<tWake
CANH
CANL
STB
RxD1
tdwakerd
tdwakedr
tWake(RxD)
normal
time
standby
Figure 5. NCV7342 Wake−up behavior
www.onsemi.com
6
NCV7342
Over−temperature Detection
state. If the dominant state on the bus is kept for longer time
than tdom(bus), the RxD pin is released to High level. The
timer is reset when CAN bus changes from dominant to
recessive state. This feature prevents generating permanent
wake−up request by the bus clamped to the dominant level.
A thermal protection circuit protects the IC from damage
by switching off the transmitter if the junction temperature
exceeds a value of approximately 180°C. Because the
transmitter dissipates most of the power, the power
dissipation and temperature of the IC is reduced. All other
IC functions continue to operate. The transmitter off−state
resets when the temperature decreases below the shutdown
threshold and pin TxD goes High. The thermal protection
circuit is particularly needed in case of a bus line failure.
Fail Safe Features
A current−limiting circuit protects the transmitter output
stage from damage caused by an accidental short circuit to
either positive or negative supply voltage, although power
dissipation increases during this fault condition.
VCC supply dropping below VUVVcc undervoltage level
will force transceiver to switch into the standby mode. The
logic level on pin STB will be ignored as long as
undervoltage condition is not recovered. (NCV7342−3
version only)
VIO supply dropping below VUVDVIO undervoltage
detection level will cause the transceiver to disengage from
the bus (no bus loading) until the VIO voltage recovers.
(NCV7342−3 version only)
The pins CANH and CANL are protected against
automotive electrical transients (according to ISO 7637; see
Figure 6). Pins TxD and STB are pulled High internally
should the input become disconnected. Pins TxD, STB and
RxD will be floating, preventing reverse supply should the
VCC supply be removed.
TxD Dominant Time−out Function
A TxD dominant time−out timer circuit prevents the bus
lines being driven to a permanent dominant state (blocking
all network communication), if pin TxD is forced
permanently Low by a hardware and/or software application
failure. The timer is triggered by a negative edge on pin TxD.
If the duration of the low−level on pin TxD exceeds the
internal timer value tdom(TxD), the transmitter is disabled,
driving the bus into a recessive state. The timer is reset by a
positive edge on pin TxD.
This TxD dominant time−out time (tdom(TxD)) limits the
minimum possible bit rate to 8 kbps.
Bus Dominant Time−out Function
Bus dominant time−out timer is started in the standby
mode when CAN bus changes from recessive to dominant
www.onsemi.com
7
NCV7342
ELECTRICAL CHARACTERISTICS
Definitions
All voltages are referenced to GND (pin 2). Positive currents flow into the IC. Sinking current means the current is flowing
into the pin; sourcing current means the current is flowing out of the pin.
Table 4. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min
Max
Unit
−0.3
+6
V
VSUP
Supply voltage VCC, VIO
VCANH
DC voltage at pin CANH
0 < VCC < 5.5 V; no time limit
−50
+50
V
VCANL
DC voltage at pin CANL
0 < VCC < 5.5 V; no time limit
−50
+50
V
0 < VCC < 5.5 V; less than
one second
−
58
V
0 < VCC < 5.5 V; no time limit
−50
+50
V
−0.3
+6
V
−4
+4
kV
−750
+750
V
VCANH,Lmax
VSPLIT
DC voltage at pin CANH and CANL during load dump
condition
DC voltage at VSPLIT pin (On NCV7342−0 version only)
VIO
DC voltage at pin TxD, RxD, STB
Vesd
Electrostatic discharge voltage at all pins according to
EIA−JESD22
(Note 2)
Standardized charged device model ESD pulses
according to ESD−STM5.3.1−1999
Vschaff
Latch−up
Electrostatic discharge voltage at CANH,CANL, VSPLIT
pins according to EIA−JESD22
(Note 2)
−8
+8
kV
Electrostatic discharge voltage at CANH, CANL pins
According to IEC 61000−4−2
(Note 3)
−15
+15
kV
Transient voltage at CANH, CANL pins, See Figure 6
(Note 4)
−150
+100
V
Static latch−up at all pins
(Note 5)
150
mA
Tstg
Storage temperature
−55
+150
°C
Tamb
Ambient temperature
−40
+125
°C
TJ
Maximum junction temperature
−40
+170
°C
MSL
Moisture Sensitivity Level SOIC
2
−
MSL
Moisture Sensitivity Level DFN
1
−
TSLD
Lead Temperature Soldering
Reflow (SMD Styles Only), Pb−Free Versions (Note 6)
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Standardized human body model electrostatic discharge (ESD) pulses in accordance to EIA−JESD22. Equivalent to discharging a 100 pF
capacitor through a 1.5 kW resistor.
3. System human body model electrostatic discharge (ESD) pulses. Equivalent to discharging a 150 pF capacitor through a 330 W resistor
referenced to GND. Verified by external test house
4. Pulses 1, 2a,3a and 3b according to ISO 7637 part 3. Verification by external test house.
5. Static latch−up immunity: Static latch−up protection level when tested according to EIA/JESD78.
6. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
Table 5. THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Characteristics, SOIC−8 (Note 7)
Thermal Resistance, Junction−to−Air, Free air, 1S0P PCB (Note 8)
Thermal Resistance, Junction−to−Air, Free air, 2S2P PCB (Note 9)
RqJA
RqJA
125
75
°C/W
°C/W
Thermal Characteristics, DFN−8, 3x3 mm (Note 7)
Thermal Resistance, Junction−to−Air, Free air, 1S0P PCB (Note 8)
Thermal Resistance, Junction−to−Air, Free air, 2S2P PCB (Note 9)
RqJA
RqJA
140
47
°C/W
°C/W
7. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
8. Values based on test board according to EIA/JEDEC Standard JESD51−3, signal layer with 10% trace coverage.
9. Values based on test board according to EIA/JEDEC Standard JESD51−7, signal layers with 10% trace coverage for the signal layer and
4 thermal vias connected between exposed pad and first inner Cu layer.
www.onsemi.com
8
NCV7342
Table 6. CHARACTERISTICS
VCC = 4.5 V to 5.5 V; VIO = 2.8V to 5.5 V (Note 10); TJ = −40 to +150°C; RLT = 60 W unless specified otherwise. On chip versions
without VIO pin reference voltage for all digital inputs and outputs is VCC instead of VIO.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
SUPPLY (Pin VCC)
Supply current
Dominant; VTxD = 0 V
Recessive; VTxD = VIO
50
6.8
75
10
mA
ICCS0
Supply current in standby mode
for NCV7342−0
TJ v 100°C (Note 11)
8
15
mA
ICCS3
Supply current in standby mode
for NCV7342−3 including current
into VIO
TJ v 100°C (Note 11)
17
mA
3.5
4.5
V
6
V
ICC
VUVVcc
Undervoltage detection voltage on
VCC pin (NCV7342−3 only)
TRANSMITTER DATA INPUT (Pin TxD)
VIH
High−level input voltage
Output recessive
2.0
VIL
Low−level input voltage
Output dominant
−0.3
+0.8
V
IIH
High−level input current
VTxD = VIO
−5
0
+5
mA
IIL
Low−level input current
VTxD = 0V
−385
−200
−45
mA
Ci
Input capacitance
Not tested
5
10
pF
TRANSMITTER MODE SELECT (Pin STB)
VIH
High−level input voltage
Standby mode
2.0
VIO+0.3
(Note 12)
V
VIL
Low−level input voltage
Normal mode
−0.3
+0.8
V
IIH
High−level input current
VSTB = VIO
−5
0
+5
mA
IIL
Low−level input current
VSTB = 0 V
−10
−4
−1
mA
Ci
Input capacitance
Not tested
5
10
pF
RECEIVER DATA OUTPUT (Pin RxD)
IOH
High−level output current
Normal mode
VRxD = VIO – 0.4 V
−1.2
−0.4
−0.1
mA
IOL
Low−level output current
VRxD = 0.4 V
1.5
6
12
mA
VOH
High−level output voltage
Standby mode
IRxD = −100 mA
VIO –
1.1
VIO
–0.7
VIO – 0.4
V
BUS LINES (Pins CANH and CANL)
Vo(reces) (norm)
Recessive bus voltage
on pins CANH and CANL
VTxD = VIO; no load; normal
mode
2.0
2.5
3.0
V
Vo(reces) (stby)
Recessive bus voltage
on pins CANH and CANL
VTxD = VIO; no load; standby
mode
−100
0
+100
mV
Io(reces) (CANH)
Recessive output current at pin
CANH
−30 V < VCANH< 35 V;
0 V < VCC < 5.5 V
−2.5
+2.5
mA
Io(reces) (CANL)
Recessive output current at pin
CANL
−30 V < VCANL < 35 V;
0 V <VCC < 5.5 V
−2.5
+2.5
mA
ILI(CANH)
Input leakage current to pin CANH
−10
0
+10
mA
ILI(CANL)
Input leakage current to pin CANL
0W < R(VCC to GND) < 1 MW
0W < R(VIO to GND) < 1 MW
VCANL = VCANH = 5 V (Note 10)
−10
0
+10
mA
VTxD = 0 V
3.0
3.6
4.25
V
Vo(dom) (CANH)
Dominant output voltage at pin
CANH
10. Only version NCV7342−3 has VIO supply pin. In NCV7342−0 this supply is provided from VCC pin.
11. Not tested in production. Guaranteed by design and prototype evaluation.
12. In case VIO > VCC, the limit is VIO + 0.3 V
www.onsemi.com
9
NCV7342
Table 6. CHARACTERISTICS
VCC = 4.5 V to 5.5 V; VIO = 2.8V to 5.5 V (Note 10); TJ = −40 to +150°C; RLT = 60 W unless specified otherwise. On chip versions
without VIO pin reference voltage for all digital inputs and outputs is VCC instead of VIO.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
BUS LINES (Pins CANH and CANL)
Vo(dom) (CANL)
Dominant output voltage at pin
CANL
VTxD = 0 V
0.5
1.4
1.75
V
Vo(dif) (bus_dom)
Differential bus output voltage
(VCANH − VCANL)
VTxD = 0 V; dominant;
45 W < RLT < 65 W
1.5
2.25
3.0
V
Vo(dif) (bus_rec)
Differential bus output voltage
(VCANH − VCANL)
VTxD = VIO; recessive;
no load
−120
0
+50
mV
Vo(sym) (bus_dom)
Bus output voltage symmetry
VCANH + VCANL
VTxD = 0 V
0.9
1.1
VCC
Io(sc) (CANH)
Short circuit output current at pin
CANH
VCANH = 0 V; VTxD = 0 V
−90
−70
−40
mA
Io(sc) (CANL)
Short circuit output current at pin
CANL
VCANL = 36 V; VTxD = 0 V
40
70
100
mA
Differential receiver threshold
voltage
−12 V < VCANL < 12 V;
−12 V < VCANH < 12 V;
VCC = 4.75 V to 5.25 V
0.5
0.7
0.9
V
Differential receiver threshold
voltage for high common−mode
−30 V < VCANL < 35 V;
−30 V < VCANH < 35 V;
VCC = 4.75 V to 5.25 V
0.40
0.7
1.0
V
Differential receiver threshold
voltage in standby mode
−12 V < VCANL < 12 V;
−12 V < VCANH < 12 V;
VCC = 4.5 V to 5.5 V
0.4
0.8
1.15
V
Vi(dif) (th)
Vihcm(dif) (th)
Vi(dif) (th)_STDBY
Ri(cm) (CANH)
Common−mode input resistance
at pin CANH
15
26
37
kW
Ri(cm) (CANL)
Common−mode input resistance
at pin CANL
15
26
37
kW
Ri(cm) (m)
Matching between pin CANH and
pin CANL common mode input
resistance
−0.8
0
+0.8
%
25
50
75
kW
Ri(dif)
VCANH = VCANL
Differential input resistance
Ci(CANH)
Input capacitance at pin CANH
VTxD = VIO; not tested
7.5
20
pF
Ci(CANL)
Input capacitance at pin CANL
VTxD = VIO; not tested
7.5
20
pF
Differential input capacitance
VTxD = VIO ; not tested
3.75
10
pF
Ci(dif)
COMMON−MODE STABILIZATION (Pin VSPLIT) Only for NCV7342−0 version
VSPLIT
Reference output voltage at pin
VSPLIT
Normal mode;
−500 mA < ISPLIT < 500 mA
0.3
0.7
VCC
VSPLITo
Reference output voltage at pin
VSPLIT
RloadVsplit > 1 MW
0.45
0.55
VCC
ISPLIT(i)
VSPLIT leakage current
Standby mode
−5
+5
mA
ISPLIT(lim)
VSPLIT limitation current
Normal mode
1.3
5
mA
2.8
5.5
V
14
mA
VIO SUPPLY VOLTAGE (Pin VIO) Only for NCV7342−3 version
VIO
Supply voltage on pin VIO
IIOS
Supply current on pin VIO in
standby mode
TJ v 100°C (Note 11)
10. Only version NCV7342−3 has VIO supply pin. In NCV7342−0 this supply is provided from VCC pin.
11. Not tested in production. Guaranteed by design and prototype evaluation.
12. In case VIO > VCC, the limit is VIO + 0.3 V
www.onsemi.com
10
NCV7342
Table 6. CHARACTERISTICS
VCC = 4.5 V to 5.5 V; VIO = 2.8V to 5.5 V (Note 10); TJ = −40 to +150°C; RLT = 60 W unless specified otherwise. On chip versions
without VIO pin reference voltage for all digital inputs and outputs is VCC instead of VIO.
Symbol
Parameter
Conditions
Min
Typ
Max
Normal mode
Dominant; VTxD = 0 V
Recessive; VTxD = VIO
0.30
0.29
0.70
0.44
1.10
0.68
Unit
VIO SUPPLY VOLTAGE (Pin VIO) Only for NCV7342−3 version
IIONM
VUVDVIO
Supply current on pin VIO
Undervoltage detection voltage on
VIO pin
mA
1.3
2.7
V
200
°C
THERMAL SHUTDOWN
TJ(SD)
Shutdown junction temperature
junction temperature rising
160
180
TIMING CHARACTERISTICS (See Figure 7 and 8)
td(TxD−BUSon)
Delay TxD to bus active
Ci = 100 pF between CANH to
CANL
60
ns
td(TxD−BUSoff)
Delay TxD to bus inactive
Ci = 100 pF between CANH to
CANL
30
ns
td(BUSon−RxD)
Delay bus active to RxD
CRxD = 15 pF
60
ns
td(BUSoff−RxD)
Delay bus inactive to RxD
CRxD = 15 pF
70
ns
tpd_dr
Propagation delay TxD to RxD
dominant to recessive transition
See Figure 8
Ci = 100 pF between CANH to
CANL, CRxD = 15 pF
50
100
230
ns
tpd_rd
Propagation delay TxD to RxD
recessive to dominant transition
See Figure 8
Ci = 100 pF between CANH to
CANL, CRxD = 15 pF
50
120
230
ns
td(stb−nm)
Delay standby mode to normal
mode
47
ms
0.5
2.1
5
ms
Valid bus wake−up event,
CRxD = 15 pF
1
3.5
10
ms
Delay to flag end of wake event
(dominant to recessive transition)
See Figure 5
Valid bus wake−up event,
CRxD = 15 pF
0.5
2.6
6
ms
tWake(RxD)
Minimum pulse width on RxD
See Figure 5
5 ms tWake
CRxD = 15 pF
0.5
tdom(TxD)
TxD dominant time for time out
VTxD = 0 V
1.3
5
ms
tdom(bus)
Bus dominant time out
Standby mode
1.3
5
ms
tWake
Dominant time for wake−up via bus
tdwakerd
Delay to flag wake event
(recessive to dominant transitions)
See Figure 5
tdwakedr
ms
10. Only version NCV7342−3 has VIO supply pin. In NCV7342−0 this supply is provided from VCC pin.
11. Not tested in production. Guaranteed by design and prototype evaluation.
12. In case VIO > VCC, the limit is VIO + 0.3 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
11
NCV7342
MEASUREMENT SET−UPS AND DEFINITIONS
+5 V
100 nF
VIO
VCC
3
5
CANH
7
TxD
1 nF
NCV7342
1
Transient
Generator
RxD
1 nF
4
6
CANL
2
8
15 pF
RB20121608
GND
STB
Figure 6. Test Circuit for Automotive Transients
+5 V
100 nF
VIO
47 uF
VCC
5
3
CANH
7
NCV7342
TxD
1
100 pF
RL
RxD
4
6
CANL
2
8
15 pF
STB
RB20120816
GND
Figure 7. Test Circuit for Timing Characteristics
www.onsemi.com
12
NCV7342
recessive
TxD
recessive
dominant
50%
50%
CANH
CANL
0.9 V
Vi(dif) = VCANH − VCANL
0.5 V
0.3 x VCC*
RxD
td(TxD−BUSon)
0.7 x VCC*
td(TxD−BUSoff)
td(BUSon−RxD)
tpd_rd
tpd_dr
*On NCV7342−3 VCC is replaced by VIO
td(BUSoff−RxD)
RB20130429
Figure 8. Transceiver Timing Diagram
DEVICE ORDERING INFORMATION
Part Number
Description
NCV7342D10R2G
High Speed CAN Transceiver
with Standby and VSPLIT pin
NCV7342D13R2G
High Speed CAN Transceiver
with Standby and VIO pin
NCV7342MW3R2G
High Speed CAN Transceiver
with Standby and VIO pin
Package
Shipping†
SOIC 150 8 GREEN (Matte Sn,
JEDEC MS−012)
(Pb−Free)
3000 / Tape & Reel
DFN 8
Wettable Flank
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
13
NCV7342
PACKAGE DIMENSIONS
SOIC−8
CASE 751AZ
ISSUE B
0.10 C D
NOTES 4&5
45 5 CHAMFER
D
h
NOTE 6
D
A
8
H
2X
5
0.10 C D
E
E1
NOTES 4&5
L2
1
0.20 C D
L
C
DETAIL A
4
8X
B
NOTE 6
TOP VIEW
b
0.25
M
C A-B D
NOTES 3&7
DETAIL A
A2
NOTE 7
0.10 C
A
e
A1
NOTE 8
SIDE VIEW
SEATING
PLANE
C
c
END VIEW
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE PROTRUSION SHALL BE 0.004 mm IN EXCESS OF
MAXIMUM MATERIAL CONDITION.
4. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS
SHALL NOT EXCEED 0.006 mm PER SIDE. DIMENSION E1 DOES
NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD
FLASH OR PROTRUSION SHALL NOT EXCEED 0.010 mm PER SIDE.
5. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOT­
TOM. DIMENSIONS D AND E1 ARE DETERMINED AT THE OUTER­
MOST EXTREMES OF THE PLASTIC BODY AT DATUM H.
6. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM H.
7. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD
BETWEEN 0.10 TO 0.25 FROM THE LEAD TIP.
8. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM THE SEATING
PLANE TO THE LOWEST POINT ON THE PACKAGE BODY.
DIM
A
A1
A2
b
c
D
E
E1
e
h
L
L2
MILLIMETERS
MIN
MAX
--1.75
0.10
0.25
1.25
--0.31
0.51
0.10
0.25
4.90 BSC
6.00 BSC
3.90 BSC
1.27 BSC
0.25
0.41
0.40
1.27
0.25 BSC
RECOMMENDED
SOLDERING FOOTPRINT*
8X
0.76
8X
1.52
7.00
1
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
14
NCV7342
PACKAGE DIMENSIONS
DFN8, 3x3, 0.65P
CASE 506DG
ISSUE A
PIN ONE
REFERENCE
2X
0.10 C
ALTERNATE TERMINAL
CONSTRUCTION
E
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
TOP VIEW
A3
0.05 C
A
SIDE VIEW
C
A1
SEATING
PLANE
2.56
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
D2
DETAIL A
1
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20 REF
0.25
0.35
3.00 BSC
2.30
2.50
3.00 BSC
1.50
1.70
0.65 BSC
0.30 TYP
0.35
0.45
RECOMMENDED
SOLDERING FOOTPRINT*
0.05 C
NOTE 4
8X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
DETAIL A
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
0.10 C
2X
L
A
B
D
4
L
8X
0.60
3.30
1.70
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
E2
1
K
8
5
e/2
e
8X
0.65
PITCH
b
0.10 C A B
0.05 C
8X
0.40
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NOTE 3
BOTTOM VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
15
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCV7342/D