AMIS 30663 D

AMIS-30663
High Speed CAN
Transceiver
Introduction
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PIN ASSIGNMENT
TxD
GND
VCC
1
V33
AMIS
30663
The AMIS−30663 CAN transceiver is the interface between a
controller area network (CAN) protocol controller and the physical
bus and may be used in both 12 V and 24 V systems. The digital
interface level is powered from a 3.3 V supply providing true I/O
voltage levels for 3.3 V CAN controllers.
The transceiver provides differential transmit capability to the bus
and differential receive capability to the CAN controller. Due to the
wide common−mode voltage range of the receiver inputs, the
AMIS−30663 is able to reach outstanding levels of electromagnetic
susceptibility (EMS). Similarly, extremely low electromagnetic
emission (EME) is achieved by the excellent matching of the output
signals.
CANH
CANL
VREF
RxD
(Top View)
Key Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Fully Compatible with the “ISO 11898−2” Standard
Certified “Authentication on CAN Transceiver Conformance (d1.1)”
High Speed (up to 1 Mbit/s)
Ideally Suited for 12 V and 24 V Industrial and Automotive
Applications
Low EME Common−mode−choke is No Longer Required
Differential Receiver with Wide Common−mode Range (±35 V) for
High EMS
No Disturbance of the Bus Lines with an Un−powered Node
Transmit Data (TxD) Dominant Time−out Function
Thermal Protection
Bus Pins Protected Against Transients in an Automotive
Environment
Short Circuit Proof to Supply Voltage and Ground
Logic Level Inputs Compatible with 3.3 V Devices
ESD Protection Level for CAN Bus up to ±8 kV
This is a Pb−Free Device
Table 1. Ordering Information
Container
Part Number
Shipping
Configuration†
Quantity
Temp. Range
SOIC−8
GREEN
Tube/Tray
96
−40°C to 125°C
SOIC−8
GREEN
Tape & Reel
3000
−40°C to 125°C
Description
Package
AMIS30663CANG2G
HS CAN Transc. (3.3 V)
AMIS30663CANG2RG
HS CAN Transc. (3.3 V)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 6
1
Publication Order Number:
AMIS−30663/D
AMIS−30663
Table of Contents
Page
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Key Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Technical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin List and Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Measurement Set−ups and Definitions . . . . . . . . . . . . . . . 8
Soldering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
VCC
3
Thermal
shutdown
V33
7
Timer
TxD
’S’
V33
6
Driver
control
1
CANH
CANL
8
AMIS−30663
RxD
VREF
Ri(cm)
COMP
4
VCC
VCC/2
+
Ri(cm)
5
2
GND
Figure 1. Block Diagram
Table 2. Technical Characteristics
Symbol
Parameter
Conditions
Min
Max
Unit
VCANH
DC voltage at pin CANH
0 < VCC < 5.25 V; no time limit
−45
+45
V
VCANL
DC voltage at pin CANL
0 < VCC < 5.25 V; no time limit
−45
+45
V
Vo(dif)(bus_dom)
Differential bus output voltage
in dominant state
42.5 W < RLT < 60 W
1.5
3
V
tpd(rec−dom)
Propagation delay TxD to RxD
Figure 7
100
230
ns
tpd(dom−rec)
Propagation delay TxD to RxD
Figure 7
100
245
ns
CM−range
Input common−mode range for
comparator
Guaranteed differential receiver
threshold and leakage current
−35
+35
V
VCM−peak
Common−mode peak
Figures 8 and 9 (Note 1)
−500
500
mV
VCM−step
Common−mode step
Figures 8 and 9 (Note 1)
−150
150
mV
1. The parameters VCM−peak and VCM−step guarantee low EME.
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2
AMIS−30663
Typical Application
VBAT
IN
5V−reg
60 W
OUT
60 W
47 nF
IN
3.3V−
reg
OUT
VCC
V33
RxD
VCC
8
3
7
4
CAN
BUS
CANH
AMIS−
VREF
30663 5
CAN
controller
TxD
1
6
CANL
2
GND
GND
Figure 2. Application Diagram
1
8
V33
GND
2
7
CANH
VCC
3
6
CANL
RxD
4
5
VREF
AMIS−
30663
TxD
(top view)
Figure 3. Pin Configuration
Table 3. Pin Out
Pin
Name
1
TxD
Transmit data input; low input → dominant driver; internal pull−up current
Description
2
GND
Ground
3
VCC
Supply voltage
4
RxD
Receive data output; dominant transmitter → low output
5
VREF
Reference voltage output
6
CANL
LOW−level CAN bus line (low in dominant mode)
7
CANH
HIGH−level CAN bus line (high in dominant mode)
8
V33
3.3 V supply for digital I/O
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3
60 W
60 W
47 nF
AMIS−30663
Functional Description
General
Operating Modes
The AMIS−30663 is the interface between the CAN
protocol controller and the physical bus. It is intended for
use in automotive and industrial applications requiring baud
rates up to 1 Mbaud. It provides differential transmit
capability to the bus and differential receiver capability to
the CAN protocol controller. It is fully compatible to the
“ISO 11898−2” standard.
AMIS−30663 only operates in high−speed mode as
illustrated in Table 4.
The transceiver is able to communicate via the bus lines.
The signals are transmitted and received to the CAN
controller via the pins TxD and RxD. The slopes on the bus
lines outputs are optimised to give extremely low EME.
Table 4. Function Table (X = don’t care)
Pin
Mode
TxD
Bus
RxD
State
CANH
CANL
0
0
Dominant
High
Low
1
1
Recessive
0.5 Vcc
0.5 Vcc
X
1
Recessive
0 < VCANH < VCC
0 < VCANL < VCC
1
Recessive
0 < VCANH < VCC
0 < VCANL < VCC
4.75 V < Vcc < 5.25 V
High
Speed
Vcc < PORL
−
PORL < Vcc < 4.75 V
−
> VIH
Over−temperature Detection
Should TxD become disconnected, this pin is pulled high
internally.
When the Vcc supply is removed, pins TxD and RxD will
be floating. This prevents the AMIS−30663 from being
supplied by the CAN controller through the I/O pins.
A thermal protection circuit protects the IC from damage
by switching off the transmitter if the junction temperature
exceeds a value of approximately 160°C. Because the
transmitter dissipates most of the power, the power
dissipation and temperature of the IC is reduced. All other
IC functions continue to operate. The transmitter off−state
resets when pin TxD goes HIGH. The thermal protection
circuit is particularly needed when a bus line short circuits.
3.3 V Interface
AMIS−30663 may be used to interface with 3.3 V or 5 V
controllers by use of the V33 pin. This pin may be supplied
with 3.3 V or 5 V to have the corresponding digital interface
voltage levels.
When the V33 pin is supplied at 2.5 V, even interfacing
with 2.5 V CAN controllers is possible. See also Digital
Output Characteristics @ V33 = 2.5 V, Table 8. In this case
a pull resistor from TxD to V33 is necessary.
TxD Dominant Time−out Function
A TxD dominant time−out timer circuit prevents the bus
lines from being driven to a permanent dominant state
(blocking all network communication) if pin TxD is forced
permanently LOW by a hardware and/or software
application failure. The timer is triggered by a negative edge
on pin TxD. If the duration of the LOW−level on pin TxD
exceeds the internal timer value tdom, the transmitter is
disabled, driving the bus into a recessive state. The timer is
reset by a positive edge on pin TxD.
Electrical Characteristics
Definitions
All voltages are referenced to GND (pin 2). Positive
currents flow into the IC. Sinking current means that the
current is flowing into the pin. Sourcing current means that
the current is flowing out of the pin.
Fail−safe Features
A current−limiting circuit protects the transmitter output
stage from damage caused by accidental short−circuit to
either positive or negative supply voltage − although power
dissipation increases during this fault condition.
The pins CANH and CANL are protected from
automotive electrical transients (according to “ISO 7637”;
see Figure 4).
Absolute Maximum Ratings
Stresses above those listed in Table 5 may cause
permanent device failure. Exposure to absolute maximum
ratings for extended periods may effect device reliability.
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4
AMIS−30663
Table 5. Absolute Maximum Ratings
Symbol
Parameter
Conditions
Min.
Max.
Unit
VCC
Supply voltage
−0.3
+7
V
V33
I/O interface voltage
−0.3
+7
V
−45
+45
V
VCANH
DC voltage at pin CANH
0 < VCC < 5.25 V; no time limit
VCANL
DC voltage at pin CANL
0 < VCC < 5.25 V; no time limit
−45
+45
V
VTxD
DC voltage at pin TxD
−0.3
VCC + 0.3
V
VRxD
DC voltage at pin RxD
−0.3
VCC + 0.3
V
VREF
DC voltage at pin VREF
−0.3
VCC + 0.3
V
Vtran(CANH)
Transient voltage at pin CANH
(Note 2)
−150
+150
V
Vtran(CANL)
Transient voltage at pin CANL
(Note 2)
−150
+150
V
Vtran(VREF)
Transient voltage at pin VREF
(Note 2)
−150
+150
V
Electrostatic discharge voltage at
CANH and CANL pin
(Note 3)
(Note 6)
−8
−500
+8
+500
kV
V
Electrostatic discharge voltage at all
other pins
(Note 4)
(Note 6)
−4
−250
+4
+250
kV
V
Static latch−up at all pins
(Note 5)
100
mA
Vesd(CANL/CANH)
Vesd
Latch−up
Tstg
Storage temperature
−55
+155
°C
Tamb
Ambient temperature
−40
+125
°C
Tjunc
Maximum junction temperature
−40
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with “ISO 7637 part 3”, test pulses 1, 2, 3a and 3b (see Figure 4).
3. Standardized human body model system ESD pulses in accordance to IEC 1000.4.2.
4. Standardized human body model ESD pulses in accordance to MIL883 method 3015. Supply pin 8 is ±4 kV.
5. Static latch−up immunity: static latch−up protection level when tested according to EIA/JESD78.
6. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993.
Table 6. Thermal Characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(vj−a)
Thermal resistance from junction to ambient in SO8 package
In free air
145
K/W
Rth(vj−s)
Thermal resistance from junction to substrate of bare die
In free air
45
K/W
Typ.
Max.
Unit
45
4
65
8
mA
V33 = 3.3 V;
CL = 20 pF; recessive
1
mA
V33 = 3.3 V;
CL = 20 pF; 1 Mbps
170
mA
Table 7. DC Characteristics
(VCC = 4.75 to 5.25 V; V33 = 2.9 V to 3.6 V; Tjunc = −40 to +150°C; RLT = 60 W unless specified otherwise.)
Parameter
Symbol
Conditions
Min.
Supply (pin VCC and pin V33)
ICC
Supply current
Dominant; VTXD = 0 V
Recessive; VTXD = VCC
I33
I/O interface current
I33
I/O interface current (Note 7)
Transmitter Data Input (pin TxD)
VIH
HIGH−level input voltage
Output recessive
2.0
−
VCC
V
VIL
LOW−level input voltage
Output dominant
−0.3
−
+0.8
V
IIH
HIGH−level input current
VTxD = V33
−1
0
+1
mA
IIL
LOW−level input current
VTxD = 0 V
−50
−200
−300
mA
7. Not tested on ATE.
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AMIS−30663
Table 7. DC Characteristics
(VCC = 4.75 to 5.25 V; V33 = 2.9 V to 3.6 V; Tjunc = −40 to +150°C; RLT = 60 W unless specified otherwise.)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
−
5
10
pF
0.7 x
V33
0.75 x
V33
Transmitter Data Input (pin TxD)
Ci
Input capacitance (Note 7)
Receiver Data Output (pin RxD)
VOH
HIGH−level output voltage
IRXD = − 10 mA
VOL
LOW−level output voltage
IRXD = 5 mA
Ioh
HIGH−level output current (Note 7)
VRxD = 0.7 x V33
Iol
LOW−level output current (Note 7)
VRxD = 0.45 V
V
0.18
0.35
V
−10
−15
−20
mA
5
10
15
mA
Reference Voltage Output (pin VREF)
VREF
Reference output voltage
−50 mA < IVREF < +50 mA
0.45 x
VCC
0.50 x
VCC
0.55 x
VCC
V
VREF_CM
Reference output voltage for full
common−mode range
−35 V < VCANH < +35 V;
0.40 x
VCC
0.50 x
VCC
0.60 x
VCC
V
−35 V < VCANL < +35 V
Bus Lines (pins CANH and CANL)
Vo(reces)(CANH)
Recessive bus voltage at pin CANH
VTxD = VCC; no load
2.0
2.5
3.0
V
Vo(reces)(CANL)
Recessive bus voltage at pin CANL
VTxD = VCC; no load
2.0
2.5
3.0
V
Io(reces) (CANH)
Recessive output current at pin CANH
−35 V < VCANH < +35 V;
0 V < VCC < 5.25 V
−2.5
−
+2.5
mA
Io(reces) (CANL)
Recessive output current at pin CANL
−35 V < VCANL < +35 V;
0 V < VCC < 5.25 V
−2.5
−
+2.5
mA
Vo(dom) (CANH)
Dominant output voltage at pin CANH
VTxD = 0 V
3.0
3.6
4.25
V
Vo(dom) (CANL)
Dominant output voltage at pin CANL
VTxD = 0 V
0. 5
1.4
1.75
V
Vo(dif) (bus)
Differential bus output voltage
(VCANH − VCANL)
VTxD = 0 V; dominant;
42.5 W < RLT < 60 W
1.5
2.25
3.0
V
VTxD = VCC;
recessive; no load
−120
0
+50
mV
Io(sc) (CANH)
Short circuit output current at pin CANH
VCANH = 0 V; VTxD = 0 V
−45
−70
−95
mA
Io(sc) (CANL)
Short circuit output current at pin CANL
VCANL = 36 V; VTxD = 0 V
45
70
120
mA
Vi(dif)(th)
Differential receiver threshold voltage
−5 V < VCANL < +12 V;
0.5
0.7
0.9
V
−35 V < VCANL < +35 V;
0.25
0.7
1.05
V
−35 V < VCANL < +35 V;
50
70
100
mV
−5 V < VCANH < +12 V;
see Figure 5
Vihcm(dif) (th)
Vi(dif) (hys)
Differential receiver threshold voltage
for high common−mode
−35 V < VCANH < +35 V;
see Figure 5
Differential receiver input voltage
hysteresis
−35 V < VCANH < +35 V;
see Figure 5
Bus Lines (pins CANH and CANL)
Ri(cm)(CANH)
Common−mode input resistance at pin
CANH
15
25
37
KW
Ri(cm) (CANL)
Common−mode input resistance at pin
CANL
15
25
37
KW
Ri(cm)(m)
Matching between pin CANH and pin
CANL common−mode input resistance
−3
0
+3
%
VCANH = VCANL
7. Not tested on ATE.
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AMIS−30663
Table 7. DC Characteristics
(VCC = 4.75 to 5.25 V; V33 = 2.9 V to 3.6 V; Tjunc = −40 to +150°C; RLT = 60 W unless specified otherwise.)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
25
50
75
KW
7.5
20
pF
Bus Lines (pins CANH and CANL)
Ri(dif)
Differential input resistance
Ci(CANH)
Input capacitance at pin CANH
VTxD = VCC; not tested
Ci(CANL)
Input capacitance at pin CANL
VTxD = VCC; not tested
7.5
20
pF
Ci(dif)
Differential input capacitance
VTxD = VCC; not tested
3.75
10
pF
ILI(CANH)
Input leakage current at pin CANH
VCC = 0 V; VCANH = 5 V
10
170
250
mA
ILI(CANL)
Input leakage current at pin CANL
VCC = 0 V; VCANL = 5 V
10
170
250
mA
VCM−peak
Common−mode peak during transition
from dom → rec or rec → dom
Figures 8 and 9
−500
500
mV
VCM−step
Difference in common−mode between
dominant and recessive state
Figures 8 and 9
−150
150
mV
CANH, CANL, Vref in tri−
state below POR level
2.2
3.5
4.7
V
150
160
180
°C
Power on Reset
PORL
POR level
Thermal Shutdown
Tj(sd)
shutdown junction temperature
Timing Characteristics (see Figures 6 and 7)
td(TxD−BUSon)
Delay TxD to bus active
40
85
110
ns
td(TxD−BUSoff)
Delay TxD to bus inactive
30
60
110
ns
td(BUSon−RxD)
Delay bus active to RxD
25
55
110
ns
td(BUSoff−RxD)
Delay bus inactive to RxD
65
100
135
ns
tpd(rec−dom)
Propagation delay TxD to RxD from
recessive to dominant
100
230
ns
td(dom−rec)
Propagation delay TxD to RxD from
dominant to recessive
100
245
ns
tdom(TxD)
TxD dominant time for time out
450
750
ms
Typ.
Max.
Unit
VTxD = 0 V
250
7. Not tested on ATE.
Table 8. Digital Output Characteristics @ V33 = 2.5 V
(VCC = 4.75 to 5.25 V; V33 = 2.5 V ±5%; Tjunc = −40 to +150°C; RLT = 60 W unless specified otherwise.)
Parameter
Symbol
Conditions
Min.
Receiver Data Output (pin RxD)
Ioh
HIGH−level output current
VOH > 0.9 x V33
Iol
LOW−level output current
VOL < 0.1 x V33
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−2.6
mA
4
mA
AMIS−30663
Measurement Set−ups and Definitions
+3.3 V
100 nF
+5 V
VCC
100 nF
V33
3
8
7
TxD
1
RxD
1 nF
AMIS−
30663
4
5
6
2
20 pF
CANH
VREF
Transient
Generator
1 nF
CANL
GND
Figure 4. Test Circuit for Automotive Transients
V RxD
High
Low
Hysteresis
0,9
0,5
V i(dif)(hys)
Figure 5. Hysteresis of the Receiver
+3.3 V
+5 V
100 nF
8
3
TxD
1
RxD
20 pF
V33
VCC
100 nF
4
7
CANH
AMIS−
V
30663 5 REF
60 W
6
CANL
2
GND
RLT
Figure 6. Test Circuit for Timing Characteristics
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8
CLT
100 pF
AMIS−30663
HIGH
LOW
TxD
CANH
CANL
dominant
0,9V
Vi(dif) =
VCANH − VCANL
0,5V
recessive
RxD
0,7 x V33
0,3 x V33
t d(TxD−BUSon)
t d(TxD−BUSoff)
td(BUSon−RxD)
t pd(dom−rec)
t pd(rec−dom)
td(BUSoff−RxD)
Figure 7. Timing Diagram for AC Characteristics
+3.3 V
100 nF
+5 V
V CC
V 33
3
TxD
8
7
1
AMIS−
30663
RxD
10 nF
Active Probe
6
Generator
6.2 k W
CANH
CANL
6.2 k W
4
5
2
20 pF
30 W
Spectrum Anayzer
30 W
V REF
47 nF
GND
Figure 8. Basic Test Set−up for Electromagnetic Measurement
CANH
CANL
recessive
VCM =
0.5*(VCANH+VCANL)
V CM−step
V CM−peak
V CM−peak
Figure 9. Common−mode Voltage Peaks (see measurement set−up Figure 8)
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AMIS−30663
Soldering
• Use a double−wave soldering method comprising a
Introduction to Soldering Surface Mount Packages
This text gives a very brief insight to a complex
technology. A more in−depth account of soldering ICs can
be found in the ON Semiconductor “Data Handbook IC26;
Integrated Circuit Packages” (document order number 9398
652 90011). There is no soldering method that is ideal for all
surface mount IC packages. Wave soldering is not always
suitable for surface mount ICs, or for printed−circuit boards
(PCB) with high population densities. In these situations
re−flow soldering is often used.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied to
the PCB by screen printing, stencilling or pressure−syringe
dispensing before package placement. Several methods
exist for re−flowing; for example, infrared/convection
heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling)
vary between 100 and 200 seconds depending on heating
method. Typical re−flow peak temperatures range from 215
to 250°C. The top−surface temperature of the packages
should preferably be kept below 230°C.
turbulent wave with high upward pressure followed by
a smooth laminar wave.
• For packages with leads on two sides and a pitch (e):
1. Larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the PCB;
2. Smaller than 1.27 mm, the footprint longitudinal
axis must be parallel to the transport direction of
the PCB. The footprint must incorporate solder
thieves at the downstream end.
• For packages with leads on four sides, the footprint
must be placed at a 45° angle to the transport direction
of the PCB. The footprint must incorporate solder
thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the adhesive
is cured. Typical dwell time is four seconds at 250°C. A
mildly−activated flux will eliminate the need for removal of
corrosive residues in most applications.
Wave Soldering
Manual Soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or PCBs with a high
component density, as solder bridging and non−wetting can
present major problems. To overcome these problems the
double−wave soldering method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Fix the component by first soldering two diagonally−
opposite end leads. Use a low voltage (24 V or less)
soldering iron applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300°C.
When using a dedicated tool, all other leads can be
soldered in one operation within two to five seconds
between 270 and 320°C.
Re−flow Soldering
Table 9. Soldering Process
Soldering Method
Wave
Re−flow (Note 8)
Not suitable
Suitable
Not suitable (Note 9)
Suitable
Suitable
Suitable
Not recommended (Notes 10 and 11)
Suitable
Not recommended (Note 12)
Suitable
Package
BGA, SQFP
HLQFP, HSQFP, HSOP, HTSSOP, SMS
PLCC (Note 10), SO, SOJ
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
8. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect
to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture
in them (the so called popcorn effect). For details, refer to the drypack information in the “Data Handbook IC26; Integrated Circuit Packages;
Section: Packing Methods.”
9. These packages are not suitable for wave soldering as a solder joint between the PCB and heatsink (at bottom version) can not be achieved,
and as solder may stick to the heatsink (on top version).
10. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must
incorporate solder thieves downstream and at the side corners.
11. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable
for packages with a pitch (e) equal to or smaller than 0.65 mm.
12. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable
for packages with a pitch (e) equal to or smaller than 0.5 mm.
Company or Product Inquiries
For more information about ON Semiconductor’s products or services visit our Web site at http://onsemi.com.
http://onsemi.com
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AMIS−30663
PACKAGE DIMENSIONS
SOIC 8
CASE 751AZ−01
ISSUE O
ON Semiconductor and
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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