MC74HCT366A D

MC74HCT366A
Hex 3-State Inverting
Buffer with Common
Enables and LSTTL
Compatible Inputs
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High−Performance Silicon−Gate CMOS
The MC74HCT366A is identical in pinout to the LS366. The device
inputs are compatible with standard CMOS or LSTTL outputs.
This device is a high−speed hex buffer with 3−state outputs and two
common active−low Output Enables. When either of the enables is
high, the buffer outputs are placed into high−impedance states. The
HCT366A has inverting outputs.
MARKING
DIAGRAMS
16
SOIC−16
D SUFFIX
CASE 751B
16
1
1
Features
•
•
•
•
•
•
•
•
•
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 90 FETs or 22.5 Equivalent Gates
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−Free Devices*
HCT366AG
AWLYWW
16
16
1
TSSOP−16
DT SUFFIX
CASE 948F
HCT
366A
ALYWG
G
1
A
= Assembly Location
WL, L
= Wafer Lot
Y
= Year
WW, W = Work Week
G or G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 2
1
Publication Order Number:
MC74HCT366A/D
MC74HCT366A
OUTPUT
ENABLE 1
A0
1
16
2
15
Y0
3
14
VCC
OUTPUT
ENABLE 2
A5
A1
4
13
Y5
Y1
5
12
A4
A2
6
11
Y4
Y2
7
10
A3
GND
8
9
Y3
A0
A1
A2
A3
A4
Figure 1. Pin Assignment
A5
1
OUTPUT ENABLE 1
15
OUTPUT ENABLE 2
FUNCTION TABLE
Inputs
Output
Enable
1
Enable
2
A
Y
L
L
H
X
L
L
X
H
L
H
X
X
H
L
Z
Z
2
3
4
5
6
7
10
9
12
11
14
13
Y0
Y1
Y2
Y3
Y4
Y5
PIN 16 = VCC
PIN 8 = GND
Figure 2. Logic Diagram
X = don’t care
Z = high impedance
ORDERING INFORMATION
Package
Shipping†
SOIC−16
(Pb−Free)
48 Units / Rail
Device
MC74HCT366ADG
MC74HCT366ADR2G
MC74HCT366ADTR2G
NLVHCT366ADTRG*
TSSOP−16
(Pb−Free)
2500 Units / Reel
2500 Units / Reel
2500 Units / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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2
MC74HCT366A
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
– 0.5 to + 7.0
V
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
VCC
DC Supply Voltage (Referenced to GND)
Vin
Vout
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
SOIC Package†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC = 2.0 V
VCC = 3.0 V
VCC = 4.5 V
VCC = 6.0 V
Min
Max
Unit
2.0
6.0
V
0
VCC
V
– 55
+ 125
_C
0
0
0
0
1000
600
500
400
ns
Functional operation above the stresses listed in the Recommended Operating Ranges is not
implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may
affect device reliability.
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
v 85_C
v 125_C
Unit
VIH
Minimum High−Level Input
Voltage
Vout = VCC – 0.1 V
|Iout| v 20 μA
4.5
to
5.5
2.0
2.0
2.0
V
VIL
Maximum Low−Level Input
Voltage
Vout = 0.1 V
|Iout| v 20 μA
4.5
to
5.5
0.80
0.80
0.80
V
VOH
Minimum High−Level Output
Voltage
Vin = VIH
|Iout| v 20 μA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
6.0
± 0.1
± 1.0
± 1.0
Vin = VIH
VOL
Maximum Low−Level Output
Voltage
Vin = VIL
|Iout| v 20 μA
Vin = VIL
Iin
Maximum Input Leakage Current
|Iout| v 3.6 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
|Iout| v 3.6 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
Vin = VCC or GND
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3
V
μA
MC74HCT366A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
v 85_C
v 125_C
Unit
IOZ
Maximum Three−State
Leakage Current
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0
± 0.5
± 5.0
± 10
μA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 μA
6.0
4
40
160
μA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
VCC
V
– 55 to
25_C
v 85_C
v 125_C
Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
2.0
3.0
4.5
6.0
120
60
24
20
150
75
30
26
180
90
36
31
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
220
110
44
37
275
140
55
47
330
170
66
56
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
220
110
44
37
275
140
55
47
330
170
66
56
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
3.0
4.5
6.0
60
22
12
10
75
28
15
13
90
34
18
15
ns
Cin
Maximum Input Capacitance
—
10
10
10
pF
Cout
Maximum Three−State Output Capacitance
(Output in High−Impedance State)
—
15
15
15
pF
Typical @ 25°C, VCC = 5.0 V
CPD
60
Power Dissipation Capacitance (Per Buffer)*
* Used to determine the no−load dynamic power consumption: P D = CPD VCC2 f + ICC VCC .
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4
pF
MC74HCT366A
SWITCHING WAVEFORMS
(VI = 0 to 3 V, VM = 1.3 V)
VCC
tr
tf
INPUT A
(VI)
VCC
90%
VM
10%
OUTPUT ENABLE
(VI)
GND
tPLH
tPHL
OUTPUT Y
90%
50%
10%
OUTPUT Y
VM
GND
tPZL
HIGH
IMPEDANCE
50%
tPZH
OUTPUT Y
tPLZ
tPHZ
10%
VOL
90%
VOH
50%
HIGH
IMPEDANCE
tTHL
tTLH
Figure 1.
Figure 2.
TEST CIRCUITS
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
1 kΩ
CL*
*Includes all probe and jig capacitance
Figure 3.
Figure 4.
LOGIC DETAIL
TO OTHER
FIVE BUFFERS
ONE OF 6
BUFFERS
VCC
Y
INPUT A
OUTPUT ENABLE 1
OUTPUT ENABLE 2
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5
MC74HCT366A
PACKAGE DIMENSIONS
TSSOP−16
DT SUFFIX
CASE 948F
ISSUE B
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
K
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
ÇÇÇ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
8
1
N
0.15 (0.006) T U
S
0.25 (0.010)
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
M
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
DETAIL E
SOLDERING FOOTPRINT
7.06
1
0.65
PITCH
16X
0.36
16X
1.26
DIMENSIONS: MILLIMETERS
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6
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
MC74HCT366A
PACKAGE DIMENSIONS
SOIC−16
D SUFFIX
CASE 751B−05
ISSUE K
−A−
16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
9
−B−
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
DIM
A
B
C
D
F
G
J
K
M
P
R
F
X 45 _
C
−T−
SEATING
PLANE
J
M
D
16 PL
0.25 (0.010)
M
T B
S
A
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
S
SOLDERING FOOTPRINT
8X
6.40
16X
1
1.12
16
16X
0.58
1.27
PITCH
8
9
DIMENSIONS: MILLIMETERS
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MC74HCT366A/D