ESD7M5.0D D

ESD7M5.0DT5G
Transient Voltage
Suppressors
ESD Protection Diodes with Ultra−Low
Capacitance
The ESD7M5.0DT5G is designed to protect voltage sensitive
components from damage due to ESD in applications that require ultra
low capacitance to preserve signal integrity. Excellent clamping
capability, low leakage and fast response time are combined with an
ultra low diode capacitance of 2.5 pF to provide best in class
protection from IC damage due to ESD. The ultra small SOT−723
package is ideal for designs where board space is at a premium. The
ESD7M5.0DT5G can be used to protect two uni−directional lines or
one bi−directional line. When used to protect one bi−directional line,
the effective capacitance is 1.25 pF. Because of its low capacitance, it
is well suited for protecting high frequency signal lines such as
USB2.0 high speed and antenna line applications.
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PIN 1. CATHODE
2. CATHODE
3. ANODE
Specification Features:
3
2
SOT−723
CASE 631AA
• Low Capacitance 2.5 pF Max
• Low Clamping Voltage
• Small Body Outline Dimensions:
•
•
•
•
•
•
•
1
0.047” x 0.047” (1.20 mm x 1.20 mm)
Low Body Height: 0.020″ (0.5 mm)
Stand−off Voltage: 5 V
Low Leakage
Response Time is Typically < 1.0 ns
IEC61000−4−2 Level 4 ESD Protection
AEC−Q101 Qualified and PPAP Capable
This is a Pb−Free Device
MARKING DIAGRAM
L7 M
1
L7 = Specific Device Code
M = Date Code
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
ORDERING INFORMATION
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
IEC 61000−4−2 (ESD)
Symbol
Contact
Value
Unit
±10
kV
Total Power Dissipation on FR−5 Board
(Note 1) @ TA = 25°C
°PD°
150
mW
Storage Temperature Range
Tstg
−55 to +150
°C
Junction Temperature Range
TJ
−55 to +125
°C
Lead Solder Temperature − Maximum
(10 Second Duration)
TL
260
°C
Device
Package
Shipping†
ESD7M5.0DT5G
SOT−723
(Pb−Free)
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 4
1
Publication Order Number:
ESD7M5.0D/D
ESD7M5.0DT5G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
I
Parameter
IF
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
Working Peak Reverse Voltage
VBR
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Ppk
Peak Power Dissipation
V
IR VF
IT
Breakdown Voltage @ IT
IT
C
VC VBR VRWM
Maximum Reverse Leakage Current @ VRWM
IPP
Uni−Directional TVS
Capacitance @ VR = 0 and f = 1.0 MHz
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
VRWM
(V)
IR (mA)
@ VRWM
VBR (V)
@ IT
(Note 2)
C (pF),
uni−directional
(Note 3)
IT
C (pF),
bi−directional
(Note 4)
VC (V)
@ IPP = 1 A
(Note 5)
VC
Per
IEC61000−
4−2
(Note 6)
Device
Device
Marking
Max
Max
Min
mA
Max
Max
Max
ESD7M5.0DT5G
L7
5.0
1.0
5.4
1.0
2.5
1.25
10.4
2.
3.
4.
5.
6.
Figures 1
and 2
VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
Uni−directional capacitance at f = 1 MHz, VR = 0 V, TA = 25°C (pin1 to pin 3; pin 2 to pin 3).
Bi−directional capacitance at f = 1 MHz, VR = 0 V, TA = 25°C (pin1 to pin 2).
Surge current waveform per Figure 5.
For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV contact per IEC 61000−4−2
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV contact per IEC 61000−4−2
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2
ESD7M5.0DT5G
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
Ipeak
Level
Test
Voltage
(kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1
2
7.5
4
2
2
4
15
8
4
3
6
22.5
12
6
4
8
30
16
8
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
ESD Gun
Oscilloscope
TVS
50 W
Cable
50 W
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
% OF PEAK PULSE CURRENT
100
PEAK VALUE IRSM @ 8 ms
tr
90
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
20
40
t, TIME (ms)
60
Figure 5. 8 X 20 ms Pulse Waveform
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3
80
ESD7M5.0DT5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
L2
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
RECOMMENDED
SOLDERING FOOTPRINT*
BOTTOM VIEW
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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ESD7M5.0D/D
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