ESD8472 D

ESD8472
Ultra-Low Capacitance ESD
Protection Diodes
Micro−Packaged Diodes for ESD Protection
The ESD8472 is designed to protect voltage sensitive components
that require ultra-low capacitance from ESD and transient voltage
events. Excellent clamping capability, low capacitance, high
breakdown voltage, high linearity, low leakage, and fast response time
make these parts ideal for ESD protection on designs where board
space is at a premium. It has industry leading capacitance linearity
over voltage making it ideal for RF applications. This capacitance
linearity combined with the extremely small package and low
insertion loss makes this part well suited for use in antenna line
applications for wireless handsets and terminals.
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MARKING
DIAGRAM
Features
•
•
•
•
•
•
•
•
•
•
Industry Leading Capacitance Linearity Over Voltage
Ultra−Low Capacitance: 0.2 pF
Insertion Loss: 0.030 dBm
0201DNS Package: 0.60 mm x 0.30 mm
Stand−off Voltage: 5.3 V
Low Leakage: < 1 nA
Low Dynamic Resistance: < 1 W
1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
Typical Applications
•
•
•
•
RF Signal ESD Protection
RF Switching, PA, and Antenna ESD Protection
Near Field Communications
USB 2.0, USB 3.0
PIN 1
X3DFN2
CASE 152AF
4M
4 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Package
Shipping†
ESD8472MUT5G
X3DFN2
(Pb−Free)
10000 / Tape &
Reel
SZESD8472MUT5G
X3DFN2
(Pb−Free)
15000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
IEC 61000−4−2 Level 4 (Contact) (Note 1)
IEC 61000−4−2 Level 4 (Air) (Note 1)
Maximum Peak Pulse Current
IEC 61000−4−5 8/20 ms (Lightning) (Note 2)
Total Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum
(10 Second Duration)
Symbol
Value
Unit
ESD
±20
±20
kV
IPP
3.0
A
°PD°
RqJA
300
400
mW
°C/W
TJ, Tstg
−55 to
+150
°C
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−2 waveform.
2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.
3. Mounted with recommended minimum pad size, DC board FR−4
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 9
1
Publication Order Number:
ESD8472/D
ESD8472
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
IPP
Parameter
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
IR VRWM VBR VC
IT
Working Peak Reverse Voltage
V
Maximum Reverse Leakage Current @ VRWM
VBR
IT
IT
VC VBR VRWM IR
Breakdown Voltage @ IT
IPP
Test Current
Bi−Directional TVS
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Condition
Min
Typ
Max
Unit
5.3
V
12
V
<1
50
nA
VRWM
VBR
IT = 1 mA (Note 4)
7.0
Reverse Leakage Current
IR
VRWM = 5.3 V
Clamping Voltage
VC
IPP = 1 A (Note 5)
11
15
V
Clamping Voltage
VC
IPP = 3 A (Note 5)
14
20
V
ESD Clamping Voltage
VC
Per IEC61000−4−2
See Figures 1 and 2
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
VR = 0 V, f = 1 GHz
0.20
0.15
Dynamic Resistance
RDYN
Insertion Loss
0.30
0.30
pF
TLP Pulse
1
W
f = 1 MHz
f = 8.5 GHz
0.050
0.250
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
5. Non−repetitive current pulse at 25°C, per IEC61000−4−5 waveform (Figure 9).
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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2
ESD8472
Figure 3. IV Characteristics
Figure 4. CV Characteristics
Figure 5. RF Insertion Loss
Figure 6. Capacitance over Frequency
20
0
18
−2
16
−4
14
−6
CURRENT (A)
CURRENT (A)
TYPICAL CHARACTERISTICS
12
10
8
−8
−10
−12
6
−14
4
−16
2
−18
0
0
5
10
15
20
VOLTAGE (V)
25
−20
−30
30
Figure 7. Positive TLP I−V Curve
−25
−20
−15
−10
VOLTAGE (V)
−5
Figure 8. Negative TLP I−V Curve
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3
0
ESD8472
% OF PEAK PULSE CURRENT
100
PEAK VALUE IRSM @ 8 ms
tr
90
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
20
40
t, TIME (ms)
60
80
Figure 9. IEC 61000−4−5 8/20 ms Pulse Waveform
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4
ESD8472
PACKAGE DIMENSIONS
X3DFN2, 0.62x0.32, 0.355P, (0201)
CASE 152AF
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A B
D
PIN 1
INDICATOR
(OPTIONAL)
DIM
A
A1
b
D
E
e
L2
E
TOP VIEW
0.05 C
MILLIMETERS
MIN
MAX
0.25
0.33
−−−
0.05
0.22
0.28
0.58
0.66
0.28
0.36
0.355 BSC
0.17
0.23
A
RECOMMENDED
MOUNTING FOOTPRINT*
0.05 C
2X
A1
SIDE VIEW
C
SEATING
PLANE
0.74
e
2X
1
1
b
2
2X
2X
0.05
M
2X
0.30
0.05
L2
M
0.31
C A B
DIMENSIONS: MILLIMETERS
See Application Note AND8398/D for more mounting details
C A B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
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ESD8472/D
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