NCV7710 D

NCV7710
Door-Module Driver-IC
(Lock Driver-IC)
The NCV7710 is a powerful Driver−IC for automotive body control
systems. The IC is designed to control lock motor in the door of a
vehicle. With the monolithic full−bridge driver stage, the IC is able to
control lock motor. The NCV7710 is controlled thru a 24 bit SPI
interface with in−frame response.
www.onsemi.com
Features
• Operating Range from 5.5 V to 28 V
• Two High−Side and Two Low−Side Drivers Connected as
•
•
•
•
•
•
•
•
•
•
•
•
Half−bridges
♦ 2 Half−bridges Iload = 6 A; Rdson = 150 mW @ 25°C
Programmable Soft−Start Function to Drive Loads with Higher
Inrush Currents as Current Limitation Value
Support of PWM Control Frequency Outside the Audible Noise
Support of Active Freewheeling to Reduce Power Dissipation
Multiplex Current Sense Analog Output for Advanced Load
Monitoring
Very Low Current Consumption in Standby Mode
Charge Pump Output to Control an External Reverse Polarity
Protection MOSFET
24−Bit SPI Interface for Output Control and Diagnostic
Protection Against Short Circuit, Overvoltage and Over−temperature
Downwards Pin−to−pin and SPI Registers Compatible with
NCV7707
SSOP36−EP Power Package
AEC−Q100 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
April, 2016 − Rev. 0
NCV7710
AWLYYWWG
NCV7710 = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
YY
= Year
WW
= Work Week
G
= Pb−Free Package
See detailed ordering and shipping information on page 20 of
this data sheet.
De−centralized Door Electronic Systems
Rear Door Electronic Unit
Body Control Units (BCUs)
Several H−bridge Applications
© Semiconductor Components Industries, LLC, 2016
MARKING DIAGRAM
ORDERING INFORMATION
Typical Applications
•
•
•
•
SSOP36−EP
DQ SUFFIX
CASE 940AB
1
Publication Order Number:
NCV7710/D
NCV7710
VS
CHP
NCV7710
Undervoltage
Lockout
VCC
SI
SCLK
CSB
SO
Overvoltage
Lockout
Power−on Reset
Chargepump
CONTROL_0 Register
Diagnostic
short circuit
openload
overload
overtemperature
overvoltage
undervoltage
Driver
Interface
CONTROL_2 Register
VS
OUT1
OUT1
CONTROL_3 Register
STATUS_0 Register
VS
STATUS_1 Register
OUT2
OUT2
STATUS_2 Register
CONFIG Register
Special Function Register
PWM1
ISOUT/
PWM2
MUX
GND
Figure 1. Block Diagram
www.onsemi.com
2
NCV7710
Vbat
Switches
VS
CHP
NCV7710
Charge Pump
24−bit
Serial
Data
Interface
SO
SI
SCLK
Power−on Reset
CSB
Logic Control
mC
Logic IN
PWM1
PWM
Current Sensing
ISOUT/
PWM2
Rs
LIN SBC
(NCV742x)
LIN
(NCV7321)
High−Side
Switch
(0.15 W)
High−Side
Switch
(0.15 W)
Low−Side
Switch
(0.15 W)
Low−Side
Switch
(0.15 W)
GND
VCC
OUT2
OUT1
lock
LIN
Figure 2. Application Diagram
GND
n.c.
n.c.
n.c.
n.c.
n.c.
VS
SI
ISOUT/PWM2
CSB
SO
VCC
SCLK
VS
VS
OUT1
OUT1
GND
1
36
18
19
Figure 3. Pin Connections (Top View)
www.onsemi.com
3
Protection:
short circuit
open load
over temperature
VS undervoltage
VS overvoltage
n.c.
n.c.
n.c.
n.c.
n.c.
n.c.
n.c.
n.c.
n.c.
PWM1
CHP
VS/TEST
VS
VS
n.c.
OUT2
OUT2
GND
NCV7710
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Pin Type
Description
1
GND
Ground
2
n.c.
Not connected
3
n.c.
Not connected
4
n.c.
Not connected
5
n.c.
Not connected
6
n.c.
Not connected
7
VS
Supply
8
SI
Digital Input
9
ISOUT/PWM2
Digital Input /
Analog Output
10
CSB
Digital Input
11
SO
Digital Output
12
VCC
Supply
13
SCLK
Digital Input
14
VS
Supply
Battery Supply Input (all VS pins have to be connected externally)
15
VS
Supply
Battery Supply Input (all VS pins have to be connected externally)
16
OUT1
Half bridge driver Output
Door Lock Output (has to be connected externally to pin 17)
17
OUT1
Half bridge driver Output
Door Lock Output (has to be connected externally to pin 16)
18
GND
Ground
Ground Supply (all GND pins have to be connected externally)
Ground Supply (all GND pins have to be connected externally)
Ground Supply (all GND pins have to be connected externally)
Battery Supply Input (all VS pins have to be connected externally)
SPI interface Serial Data Input
PWM control Input / Current Sense Output. This pin is a bidirectional pin.
Depending on the selected multiplexer bits, an image of the instant current
of the corresponding HS stage can be read out.
This pin can also be used as PWM control input pin for OUT2.
SPI interface Chip Select
SPI interface Serial Data Output
Logic Supply Input
SPI interface Shift Clock
19
GND
Ground
20
OUT2
Half bridge driver Output
Door Lock Output (has to be connected externally to pin 21)
21
OUT2
Half bridge driver Output
Door Lock Output (has to be connected externally to pin 20)
22
n.c.
23
VS
Supply
Battery Supply Input (all VS pins have to be connected externally)
24
VS
Supply
Battery Supply Input (all VS pins have to be connected externally)
25
VS/TEST
Supply/Test Input
26
CHP
Analog Output
27
PWM1
Digital Input
28
n.c.
Not connected
29
n.c.
Not connected
30
n.c.
Not connected
31
n.c.
Not connected
32
n.c.
Not connected
33
n.c.
Not connected
34
n.c.
Not connected
35
n.c.
Not connected
36
n.c.
Not connected
Heat slug
Not connected
Ground
Test Input, has to be connected to VS in application
Reverse Polarity FET Control Output
PWM control Input
Substrate; Heat slug has to be connected to all GND pins
www.onsemi.com
4
NCV7710
ABSOLUTE MAXIMUM RATINGS
Symbol
Rating
Min
Max
Unit
Vs
Power supply voltage
− Continuous supply voltage
− Transient supply voltage (t < 500 ms, “clamped load dump”)
−0.3
−0.3
28
40
V
Vcc
Logic supply
−0.3
5.5
V
Vdig
DC voltage at all logic pins (SO, SI, SCLK, CSB, PWM1)
−0.3
Vcc + 0.3
V
Current monitor output / PWM2 logic input
−0.3
Vcc + 0.3
V
−25
Vs − 25
40
Vs + 15
V
Visout/pwm2
Vchp
Charge pump output (the most stringent value is applied)
Voutx
Static output voltage (OUT1/2)
−0.3
Vs + 0.3
V
Iout1/2
OUT1/2 Output current
−10
10
A
ESD_HBM
ESD Voltage, HBM (Human Body Model); (100 pF, 1500 W) (Note 1)
− All pins
− Output pins OUT1/2 to GND (all unzapped pins grounded)
−2
−4
2
4
kV
ESD_CDM
ESD according to CDM (Charge Device Model) (Note 1)
− All pins
− Corner pins
−500
−750
500
750
V
Operating junction temperature range
−40
150
°C
Tstg
TJ
Storage temperature range
−55
150
°C
MSL
Moisture sensitivity level (Note 2)
MSL3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Charge Device Model tested per EIA/JES D22/C101, Field Induced Charge Model
2. For soldering information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
THERMAL CHARACTERISTICS
Symbol
Value
Unit
RθJA
Thermal Characteristics, SSOP36−EP, 1−layer PCB
Thermal Resistance, Junction−to−Air (Note 3)
Rating
49.4
°C/W
RθJA
Thermal Characteristics, SSOP36−EP, 4−layer PCB
Thermal Resistance, Junction−to−Air (Note 4)
24
°C/W
3. Values based on PCB of 76.2 x 114.3 mm, 72 mm copper thickness, 20 % copper area coverage and FR4 PCB substrate.
4. Values based on PCB of 76.2 x 114.3 mm, 72 / 36 mm copper thickness (signal layers / internal planes), 20 / 90 % copper area coverage
(signal layers / internal planes) and FR4 PCB substrate.
www.onsemi.com
5
NCV7710
ELECTRICAL CHARACTERISTICS
4.5 V < Vcc < 5.25 V, 8 V < Vs < 18 V, −40°C < Tj < 150°C; unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Supply voltage
Functional (see Vuv_vs / Vov_vs)
Parameter specification
5.5
8
Supply Current (VS), Standby mode
Standby mode,
VS = 16 V, 0 V v VCC v 5.25 V,
CSB = VCC, OUT1/2 = floating,
SI = SCLK = 0 V, Tj < 85°C
(TJ = 150°C)
Typ
Max
Unit
28
18
V
3
12
mA
(6)
(25)
6
20
3
6
(12)
(50)
3.3
8
mA
8
18
mA
SUPPLY
Vs
Is(standby)
Is(active)
Icc(standby)
Supply current (VS), Active mode
Active mode,
VS = 16 V,
OUT1/2 = floating
Supply Current (VCC), Standby mode
Standby mode,
VCC = 5.25 V,
SI = SCLK = 0 V, TJ < 85°C
(TJ = 150°C)
Icc(active)
Supply current (VCC), Active mode
Active mode, VS = 16 V,
OUT1/2 = floating
I(stdby)
Total Standby mode supply current
(Is + Icc)
Standby mode,
VS = 16 V, TJ < 85°C,
CSB = VCC, OUT1/2 = floating
mA
mA
OVERVOLTAGE AND UNDERVOLTAGE DETECTION
Vuv_vs(on)
Vuv_vs(off)
Vuv_vs(hys)
Vov_vs(off)
Vov_vs(on)
Vov_vs(hys)
Vuv_vcc(off)
Vuv_vcc(on)
Vuv_vcc(hys)
td_uvov
VS Undervoltage detection
VS Undervoltage hysteresis
VS increasing
5.6
6.2
V
VS decreasing
5.2
5.8
V
Vuv_vs(on) − Vuv_vs(off)
VS Overvoltage detection
VS Overvoltage hysteresis
0.65
VS increasing
20
24.5
V
VS decreasing
18
23.5
V
Vov_vs(off) − Vov_vs(on)
2
VCC increasing
VCC Undervoltage detection
V
VCC decreasing
VCC Undervoltage hysteresis
Vuv_vcc(off) − Vuv_vcc(on)
VS Undervoltage / Overvoltage filter time
Time to set the power supply
fail bit UOV_OC in the Global
Status Byte
V
2.9
2
V
V
0.11
6
V
100
ms
CHARGE PUMP OUTPUT CHP
Vchp8
Chargepump Output Voltage
Vs = 8 V, Ichp = −60 mA
Vs + 6
Vs + 9
Vs + 13
V
Vchp10
Chargepump Output Voltage
Vs = 10 V, Ichp = −80 mA
Vs + 8
Vs + 11
Vs + 13
V
Vchp12
Chargepump Output Voltage
VS > 12 V, Ichp = −100 mA
Vs + 9.5 Vs + 11
Vs + 13
V
Ichp
Chargepump Output current
VS = 13.5 V, Vchp = Vs + 10 V
−95
mA
www.onsemi.com
6
−750
NCV7710
ELECTRICAL CHARACTERISTICS
4.5 V < Vcc < 5.25 V, 8 V < Vs < 18 V, −40°C < Tj < 150°C; unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DOOR LOCK OUTPUTS OUT1, OUT2
TJ = 25°C, Iout1,2 = ± 3 A
Ron_out1,2
On−resistance HS or LS
Ioc1,2_hs
Overcurrent threshold HS
TJ > 0°C
Ioc1,2_hs_ct
Overcurrent threshold HS
TJ v 0°C
Ioc1,2_ls
Overcurrent threshold LS
Vlim1,2
0.15
TJ = 125°C, Iout1,2 = ± 3 A
Vds voltage limitation HS or LS
W
0.3
W
−10
−6
A
−10
−5.75
A
6
10
A
2
3
V
Iuld1,2_hs
Underload detection threshold HS
−300
−60
mA
Iuld1,2_ls
Underload detection threshold LS
60
300
mA
td_HS1,2(on)
Output delay time, HS Driver on
td_HS1,2(off)
Output delay time, HS Driver off
td_LS1,2(on)
Output delay time, LS Driver on
td_LS1,2(off)
Output delay time, LS Driver off
Time from CSB going high to
V(OUT1,2) = 0.9·Vs / 0.1·Vs
(on/off)
1.3
3
ms
1.5
3
ms
Time from CSB going high to
V(OUT1,2) = 0.1·Vs / 0.9·Vs
(on/off)
1
3
ms
1.5
3
ms
2
7
ms
5.5
7
ms
tdLH1,2
Cross conduction protection time, low−to−
high transition including LS slew−rate
tdHL1,2
Cross conduction protection time, high−
to−low transition including HS slew−rate
Ileak_act_hs1,2
Output HS leakage current, Active mode
V(OUT1,2) = 0 V
Ileak_act_ls1,2
Output pull−down current, Active mode
V(OUT1,2) = VS
Ileak_stdby_hs1,2
Output HS leakage current, Standby
mode
V(OUT1,2) = 0 V
Ileak_stdby_ls1,2
Output pull−down current, Standby mode
V(OUT1,2) = VS, Tj w 25°C
V(OUT1,2) = VS, Tj < 25°C
td_uld1,2
Underload blanking delay
td_old1,2
Overload shutdown blanking delay
−40
−17
150
mA
210
−5
mA
mA
120
175
mA
mA
430
3000
ms
5
8
ms
60
frec1,2L
Recovery frequency, slow recovery mode
CONTROL_3.OCRF = 0
7.4
kHz
frec1,2H
Recovery frequency, fast recovery mode
CONTROL_3.OCRF = 1
14.9
kHz
dVout1,2
Slew rate of HS driver
Vs = 13.5 V, Rload = 4 W to GND
9
Current Sense output functional voltage
range
VCC = 5 V, Vs = 8−20 V
0
Current Sense output ratio OUT1/2
K = Iout / Iis,
0 V v Vis v 4.5 V, Vcc = 5 V
Current Sense output accuracy OUT1/2
0.3 V v Vis v 4.5 V, Vcc = 5 V
Iout1/2 = 0.5−5.9 A
−7% −
4% FS
7% +
4% FS
CONTROL_2.OUTx_PWM = 0
50
65
CONTROL_2.OUTx_PWM = 1
5
10
20
30
V/ms
Vcc −
0.5
V
CURRENT SENSE MONITOR OUTPUT ISOUT/PWM2
Vis
Kis (Note 5)
Iis,acc (Notes 6, 7)
tis_blank
Current Sense blanking time
tis
Current Sense settling time
0 V to FSR (full scale range)
5. Kis trimmed at 150°C at higher value of spec range to be more centered over temp range.
6. Current sense output accuracy = Isout−Isout_ideal relative to Isout_ideal
7. FS (Full scale) = Ioutmax/Kis
www.onsemi.com
7
13400
230
265
ms
ms
NCV7710
ELECTRICAL CHARACTERISTICS
4.5 V < Vcc < 5.25 V, 8 V < Vs < 18 V, −40°C < Tj < 150°C; unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
0.3·Vcc
V
DIGITAL INPUTS CSB, SCLK, PWM1/2, SI
Vinl
Input low level
Vinh
Input high level
0.7·Vcc
V
Vin_hyst
Input hysteresis
500
mV
Rcsb_pu
CSB pull−up resistor
Vcc = 5 V,
0 V < Vcsb < 0.7·Vcc
30
120
250
kW
Rsclk_pd
SCLK pull−down resistor
Vcc = 5 V,
Vsclk = 1.5 V
30
60
220
kW
SI pull−down resistor
Vcc = 5 V,
Vsi = 1.5 V
30
60
220
kW
Rpwm1_pd
PWM1 pull−down resistor
Vcc = 5 V
Vpwm1 = 1.5 V
30
60
220
kW
Rpwm2_pd
PWM2 pull−down resistor
Vcc = 5 V,
Vpwm2 = 1.5 V,
current sense disabled
30
60
220
kW
Ileak_isout
Output leakage current
Vpwm2 = 0 V,
current sense enabled
−1
1
mA
Pin capacitance
0 V < Vcc < 5.25 V (Note 8)
10
pF
Rsi_pd
Ccsb/sclk/pwm1/2
Vcc = 5 V
DIGITAL INPUTS CSB, SCLK, SI; TIMING
tsclk
Clock period
Vcc = 5 V
1000
ns
tsclk_h
Clock high time
115
ns
tsclk_l
Clock low time
115
ns
tset_csb
CSB setup time, CSB low before rising
edge of SCLK
400
ns
tset_sclk
SCLK setup time, SCLK low before rising
edge of CSB
400
ns
tset_si
SI setup time
200
ns
thold_si
SI hold time
200
ns
tr_in
Rise time of input signal SI, SCLK, CSB
tf_in
Fall time of input signal SI, SCLK, CSB
tcsb_hi_stdby
tcsb_hi_min
Minimum CSB high time, switching from
Standby mode
Transfer of SPI−command to
input register, valid before tsact
mode transition delay expires
Minimum CSB high time, Active mode
8. Values based on design and/or characterization.
www.onsemi.com
8
100
ns
100
ns
5
10
ms
2
4
ms
NCV7710
ELECTRICAL CHARACTERISTICS
4.5 V < Vcc < 5.25 V, 8 V < Vs < 18 V, −40°C < Tj < 150°C; unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
0.2·Vcc
V
DIGITAL OUTPUT SO
Vsol
Output low level
Iso = 5 mA
Vsoh
Output high level
Iso = −5 mA
Tristate leakage current
Vcsb = Vcc,
0 V < Vso < Vcc
Tristate input capacitance
Vcsb = Vcc,
0 V < Vcc < 5.25 V (Note 9)
Ileak_so
Cso
V
0.8·Vcc
−10
10
mA
10
pF
DIGITAL OUTPUT SO; TIMING
tr_so
SO rise time
Cso = 100 pF
80
140
ns
tf_so
SO fall time
Cso = 100 pF
50
100
ns
ten_so_tril
SO enable time from tristate to low level
Cso = 100 pF, Iload = 1 mA,
pull−up load to VCC
100
250
ns
tdis_so_ltri
SO disable time from low level to tristate
Cso = 100 pF, Iload = 4 mA,
pull−up load to VCC
380
450
ns
ten_so_trih
SO enable time from tristate to high level
Cso = 100 pF, Iload = −1 mA,
pull−down load to GND
100
250
ns
tdis_so_htri
SO disable time from high level to tristate
Cso = 100 pF, Iload = −4 mA,
pull−down load to GND
380
450
ns
SO delay time
Vso < 0.3·Vcc, or Vso > 0.7·Vcc,
Cso = 100 pF
50
250
ns
td_so
9. Values based on design and/or characterization.
0.8 • VCC
CSB
0.2 • VCC
tset_csb
tcsb_hi_min
tsclk
tri_in
tset_sclk
tf_in
0.8 • VCC
SCLK
0.2 • VCC
0.2 • VCC
tsclk_h
tset_si
thold_si
0.8 • VCC
SI
tsclk_l
td_so
ten_so_trix
SO
Valid
Valid
Valid
0.7 • VCC
0.3 • VCC
Valid
Valid
0.7 • VCC
Valid
Figure 4. SPI Signals Timing Parameters
www.onsemi.com
9
NCV7710
ELECTRICAL CHARACTERISTICS
4.5 V < Vcc < 5.25 V, 8 V < Vs < 18 V, −40°C < Tj < 150°C; unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
160
°C
THERMAL PROTECTION
Tjtw_on
Temperature warning threshold
Tjtw_hys
Thermal warning hysteresis
Tjsd_on
Thermal shutdown threshold,
TJ increasing
Junction temperature
160
Tjsd_off
Thermal shutdown threshold,
TJ decreasing
Junction temperature
160
Tjsd_hys
Thermal shutdown hysteresis
5
°C
Temperature difference between warning
and shutdown threshold
20
°C
Tjsdtw_delta
td_tx
Junction temperature
140
5
Filter time for thermal warning and
shutdown
TW / TSD Global Status bits
°C
180
°C
°C
10
100
ms
30
ms
360
ms
8
ms
OPERATING MODES TIMING
tact
Time delay for mode change from
Unpowered mode into Standby mode
SPI communication ready after
VCC reached Vuv_vcc(off)
threshold
tsact
Time delay for mode change from
Standby mode into Active mode
Time until output drivers are
enabled after CSB going to high
and CONTROL_0.MODE = 1
tacts
Time delay for mode change from Active
mode into Standby mode via SPI
Time until output drivers are
disabled after CSB going to high
and CONTROL_0.MODE = 0
www.onsemi.com
10
190
NCV7710
DETAILED OPERATING AND PIN DESCRIPTION
General
condition until the status bits have been cleared by the
microcontroller. To avoid high current oscillations in case of
output short to GND and low Vs voltage conditions, it is
recommended to disable the Vs−auto−recovery by setting
OVUVR = 1.
The NCV7710 provides two half−bridge drivers. Strict
adherence to integrated circuit die temperature is necessary,
with a static maximum die temperature of 150°C. Output
drive control and fault reporting are handled via the SPI
(Serial Peripheral Interface) port. A SPI−controlled mode
control provides a low quiescent sleep current mode when
the device is not being utilized. A pull down is provided on
the SI and SCLK inputs to ensure they default to a low state
in the event of a severed input signal. A pull−up is provided
on the CSB input disabling SPI communication in the event
of an open CSB input.
Chargepump
Supply Concept
Driver Outputs
Power Supply Scheme − VS and VCC
Output PWM Control
In Standby mode, the chargepump is disabled. After
enabling the device by setting bit CONTROL_0.MODE to
active (1), the internal oscillator is started and the voltage at
the CHP output pin begins to increase. The output drivers are
enabled after a delay of tsact once MODE was set to active.
For both−half bridge outputs the device features the
possibility to logically combine the SPI−setting with a PWM
signal that can be provided to the inputs PWM1 and
ISOUT/PWM2, respectively. Each of the outputs has a fixed
PWM signal assigned which is shown in Table 1. The PWM
modulation is enabled by the respective bits in the control
registers (CONTROL_2.OUTx_PWMx). In case of using
pin ISOUT/PWM2, the application design has to take care
of either disabling the current sense feature or to provide
sufficient overdrive capability to maintain proper logic input
levels for the PWM input. To improve power performances,
fast PWMing up to 30 kHz is foreseen.
By setting PWM_SWAP bit in the configurations register
CONFIG it is possible to map both outputs to PWM1.
This is useful if PWM control and current sensing is
required at OUT1 and OUT2.
The Vs power supply voltage is used to supply the half
bridges and the high−side drivers. An all−internal
chargepump is implemented to provide the gate−drive
voltage for the n−channel type high−side transistors. The
VCC voltage is used to supply the logic section of the IC,
including the SPI interface.
Due to the independent logic supply voltage the control
and status information will not be lost in case of a loss of Vs
supply voltage. The device is designed to operate inside the
specified parametric limits if the VCC supply voltage is
within the specified voltage range (4.5 V to 5.25 V).
Between the operational level and the VCC undervoltage
threshold level (Vuv_VCC) it is guaranteed that the device
remains in a safe functional state without any inadvertent
change to logic information.
Device / Module Ground Concept
The heat slug is not hard−connected to internal GND rail.
It has to be connected externally.
Table 1. PWM CONTROL SCHEME
Power Up/Down Control
Output CONFIG.PWM_SWAP = 0 CONFIG.PWM_SWAP = 1
PWM Control Input
In order to prevent uncontrolled operation of the device
during power/up down, an undervoltage lockout feature is
implemented. Both supply voltages (VCC and Vs) are
monitored for undervoltage conditions supporting a safe
power−up transition. When Vs drops below the
undervoltage threshold Vuv_vs(off) (Vs undervoltage
threshold) both output stages are switched to
high−impedance state and the global status bit UOV_OC is
set. This bit is a multi information bit in the Global Status
Byte which is set in case of overcurrent, Vs over− and
undervoltage. In case of undervoltage the status bit
STATUS_2.VSUV is set, too.
Bit CONTROL_3.OVUVR (Vs under−/overvoltage
recovery behavior) can be used to select the desired recovery
behavior after a Vs under−voltage event. In case of OVUVR
= 0, both output stages return to their programmed state as
soon as Vs recovers back to its normal operating range. If
OVUVR is set, the automatic recovery function is disabled
thus the output stages will remain in high−impedance
OUT1
PWM1
PWM1
OUT2
PWM2
PWM1
In case of using pin ISOUT/PWM2, the application
design can decide:
• To control all PWM via PWM1 by setting bit
CONFIG.PWM_SWAP to 1
• or to disable the current sense feature
• or to provide sufficient overdrive capability to maintain
proper logic input levels for the PWM input
Due to the used external network connected between
microcontroller and ISOUT/PWM2 pin, the digital input
signal cannot be guaranteed to be a clean digital high or low
level when the current output ISOUT is activated. During
Current sense the PWM2 digital input stays functional (the
input to the digital is not gated), but the internal pull down
on PWM2 is disabled when CS is activated.
www.onsemi.com
11
NCV7710
Table 2. OUT1/2 CONTROL AND FREEWHEELING SELECTION
CONTROL_2
PWM input pin
OUTx_PWM1/2
PWM1/2
0
(PWM disabled)
CONTROL_0
Output pin state
OUTx_HS
OUTx_LS
OUTx
0
0
High Impedance
0
1
L
1
0
H
1
1
High Impedance
0
0
0
1
1
0
1
1
L
0
0
High Impedance
0
1
L
1
0
H
1
1
H
X
0
1
(PWM enabled)
1
Programmable Soft−start Function to Drive Loads with
Inrush Current Behavior
High Impedance
to select the output to be multiplexed to the current sense
output.
If the current sense feature is used in combination with
PWM control, the device will change the slew rate of the
output signal to a faster slope. Also the blanking time is
shortened to 5−10 ms.
The NCV7710 provides a sample−and−hold functionality
for the current sense output to enable precise and simple load
current diagnostics even during PWM operation of the
respective output. While in active high−side output state, the
current provided at ISOUT reflects a (low−pass−filtered)
image of the actual output current, the IS−output current is
sampled and held constant as soon as the HS output
transistor is commanded off via PWM (low−side or
high−impedant). In case no previous current information is
available in the Sample−and−hold stage (current sense
channel changed while actual channel is commanded off)
the sample stage is reset so that it reflects zero output current.
Loads with startup currents higher than the overcurrent
limits (e.g. block current of motors) can be driven using the
programmable soft−start function (Overcurrent auto−recovery
mode). Each output driver provides a corresponding
overcurrent recovery bit (CONTROL_2.OCRx) to control
the output behavior in case of a detected overcurrent event.
If auto−recovery is enabled, the device automatically
re−enables the output after a programmable recovery time.
For both half−bridge outputs, the recovery frequency can be
selected via SPI. It is recommended to only enable
auto−recovery for a minimum amount of time to drive the
connected load into a steady state condition. After turning
off the auto−recovery function, the respective channel is
automatically disabled if the overload condition still persists.
Inductive Loads
Each half bridge (OUT1/2) is built by internally
connected low−side and high−side N−MOS transistors. Due
to the built−in body diodes of the output transistors,
inductive loads can be driven at the outputs without external
free−wheeling diodes.
Diagnostic Functions
All diagnostic functions (overcurrent, underload, power
supply monitoring, thermal warning and thermal shutdown)
are internally filtered. The failure condition has to be valid
for the minimum specified filtering time (td_old, td_uld,
td_uvov and td_tx) before the corresponding status bit in the
status register is set. The filter function is used to improve
the noise immunity of the device. The undercurrent and
temperature warning functions are intended for information
purpose and do not affect the state of the output drivers. An
overcurrent condition disables the corresponding output
driver while a thermal shutdown event disables all outputs
into high impedance state. Depending on the setting of the
overcurrent recovery bits in the input register, the driver can
either perform an auto−retry or remain latched off until the
microcontroller clears the corresponding status bits.
Overtemperature shutdown is latch−off only, without
auto−retry functionality.
Current Sensing
Current Sense Output / PWM2 Input (bidirectional pin
ISOUT/PWM2)
The current sense output allows a more precise analysis of
the actual state of the load rather than the basic detection of
an under− or overload condition. The sense output provides
an image of the actual load current at the selected high side
driver transistor. The current monitor function is available
for both high current half−bridge outputs (OUT1/2).
The current sense ratio is fixed to 1/13400. To prevent
from false readouts, the signal at pin ISOUT is blanked after
switching on the driver until correct settlement of the
circuitry (max. 65 ms). Bits CONTROL_3.IS[2:0] are used
www.onsemi.com
12
NCV7710
Overvoltage / Undervoltage Shutdown
Cross−current Protection
If the supply voltage Vs rises above the switch off voltage
Vov_vs(off) or falls below Vuv_vs(off), all output
transistors are switched to high−impedance state and the
global status bit UOV_OC (multi information) is set. The
status flag STATUS_2.VSOV, resp. STATUS_2.VSUV is
set, too, to log the over−/under−voltage event. The bit
CONTROL_3.OVUVR can be used to determine the
recovery behavior once the Vs supply voltage gets back into
the specified nominal operating range. OVUVR = 0 enables
auto−recovery, with OVUVR = 1 the output stages remain
in high impedance condition until the status flags have been
cleared. Once set, STATUS2.VSOV / VSUV can only be
reset by a read&clear access to the status register STATUS_2.
The half−bridges are protected against cross−currents by
internal circuitry. If one driver is turned off (LS or HS), the
activation of the other driver of the same output will be
automatically delayed by the cross current protection
mechanism until the active driver is safely turned off.
Mode Control
Wake−up and Mode Control
Two different modes are available:
• Active mode
• Standby mode
After power−up of VCC the device starts in Standby
mode. Pulling the chip−select signal CSB to low level causes
the device to change into Active mode (analog part active).
After at least 10 ms delay, the first SPI communication is
valid and bit CONTROL_0.MODE can be used to set the
desired mode of operation. If bit MODE remains reset (0),
the device returns to the Standby mode after an internal
delay of max. 8 ms, clearing all register content and setting
all output stages into high impedance state.
Thermal Warning and Overtemperature Shutdown
The device provides a dual−stage overtemperature
protection. If the junction temperature rises above Tjtw_on,
a temperature warning flag (TW) is set in the Global Status
Byte and can be read via SPI. The control software can then
react onto this overload condition by a controlled disable of
individual outputs. If however the junction temperature
reaches the second threshold Tjsd_on, the thermal shutdown
bit TSD is set in the Global Status Byte and all output stages
are switched into high impedance state to protect the device.
The minimum shutdown delay for overtemperature is td_tx.
The output channels can be re−enabled after the device
cooled down and the TSD flag has been reset by the
microcontroller by setting CONTROL_0.MODE = 0.
VCC Power−up
Delay (tact)
Delay (tsact)
Output stages Hi−Z
Register content cleared
SPI not ready
CSB = 0
MODE = 1
CSB = 1
and
MODE = 0
Standby
Active
Output stages High−Z
Register content cleared
Openload (Underload) Detection
The openload detection monitors the load current in the
output stage while the transistor is active. If the load current
is below the openload detection threshold for at least td_uld,
the corresponding bit (ULDx) is set in the status registers
STATUS_1. The status of the output remains unchanged.
Once set, ULDx remains set regardless of the actual load
condition. It has to be reset by a read&write access to the
corresponding status register.
MODE = 1
or
CSB = 0
Output stages controlled
thru output registers
CSB = 0
MODE = 0
and
CSB = 1
Delay timer
expired
Delay (tacts)
Output stages controlled
thru output registers
Register content valid
Figure 5. Mode Transitions Diagram
Overload Detection
CSB
An overcurrent condition is indicated by the flag
(UOV_OC) in the Global Status Byte after a filter time of at
least td_old. The channel dependent overcurrent flags are set
in the status registers (STATUS_0.OCx) and the
corresponding driver is switched into high impedance state
to protect the device. Each low−side and high−side driver
stage provides its own overcurrent flag. Resetting this
overcurrent flag automatically re−enables the respective
output (provided it is still enabled thru the Control register).
If the over current recovery function is enabled, the internal
chip logic automatically resets the overcurrent flag after a
fixed delay time, generating a PWM modulated current with
a programmable duty cycle. Otherwise the status bits have
to be cleared by the microcontroller by a read&clear access
to the corresponding status register.
t
SCLK
0
1
2
3
4
5
21
22
23
t
SI
D23 D22
D21 D20 D19
D18
D2
D1
D0
t
CSB = 0
CONTROL_0.MODE = 1
Mode
standby
active
active
t
Mode
CSB = 0
&
MODE = 0
standby
active
standby
t
Figure 6. Mode Timing Diagram
www.onsemi.com
13
< 8 ms
NCV7710
SPI Control
of the selected register is transferred into the output shift
register.
The NCV7710 provides three control registers
(CONTROL_0/2/3), three status registers (STATUS_0/1/2)
and one general configuration register (CONFIG). Each of
these register contains 16−bit data, together with the 8−bit
frame header (access type, register address), the SPI frame
length is therefore 24 bits. In addition to the read/write
accessible registers, the NCV7710 provides five 8−bit ID
registers (ID_HEADER, ID_VERSION, ID_CODE1/2 and
ID_SPI−FRAME) with 8−bit data length. The content of
these registers can still be read out by a 24−bit access, the
data is then transferred in the MSB section of the data frame.
General Description
The 4−wire SPI interface establishes a full duplex
synchronous serial communication link between the
NCV7710 and the application’s microcontroller. The
NCV7710 always operates in slave mode whereas the
controller provides the master function. A SPI access is
performed by applying an active−low slave select signal at
CSB. SI is the data input, SO the data output. The SPI master
provides the clock to the NCV7710 via the SCLK input. The
digital input data is sampled at the rising edge at SCLK. The
data output SO is in high impedance state (tri−state) when
CSB is high. To readout the global error flag without sending
a complete SPI frame, SO indicates the corresponding value
as soon as CSB is set to active. With the first rising edge at
SCLK after the high−to−low transition of CSB, the content
Access
Type
SPI Frame Format
Figure 7 shows the general format of the NCV7710 SPI
frame.
Register Address
Input Data
Input Data
CSB
SCLK
SI
SO
OC1 OC1
FLT
TF
A5
A4
RES TSD
A3
A2
A1
A0
DI7
DI6
TW UOV
_OC ULD NRDY DO7 DO6
Device Status Bits
DI2
DI1
DI0
DO2 DO1 DO0
X
Address−dependent Data
Figure 7. SPI Frame Format
24−bit SPI Interface
SCLK, the data at the input pin Serial IN (SI) is latched. The
data is shifted out thru the data output pin SO after the falling
edges of SCLK. The clock SCLK must be active only within
the frame time, means when CSB is low. The correct
transmission is monitored by counting the number of clock
pulses during the communication frame. If the number of
SCLK pulses does not correspond to the frame width
indicated in the SPI−frame−ID (Chip ID Register, address
3Eh) the frame will be ignored and the communication
failure bit “TF” in the global status byte will be set. Due to this
safety functionality, daisy chaining the SPI is not possible.
Instead, a parallel operation of the SPI bus by controlling the
CSB signal of the connected ICs is recommended.
Both 24−bit input and output data are MSB first. Each
SPI−input frame consists of a command byte followed by
two data bytes. The data returned on SO within the same
frame always starts with the global status byte. It provides
general status information about the device. It is then
followed by 2 data bytes (in−frame response) which content
depends on the information transmitted in the command
byte. For write access cycles, the global status byte is
followed by the previous content of the addressed register.
Chip Select Bar (CSB)
CSB is the SPI input pin which controls the data transfer
of the device. When CSB is high, no data transfer is possible
and the output pin SO is set to high impedance. If CSB goes
low, the serial data transfer is allowed and can be started. The
communication ends when CSB goes high again.
Serial Data In (SI)
During the rising edges of SCLK (CSB is low), the data
is transferred into the device thru the input pin SI in a serial
way. The device features a stuck−at−one detection, thus
upon detection of a command = FFFFFFh, the device will be
forced into the Standby mode. All output drivers are
switched off.
Serial Clock (SCLK)
If CSB is set to low, the communication starts with the
rising edge of the SCLK input pin. At each rising edge of
www.onsemi.com
14
NCV7710
Serial Data Out (SO)
the remaining bits are unused but are reserved. Both Write
and Read mode allow access to the internal registers of the
device. A “Read & Clear”−access is used to read a status
register and subsequently clear its content. The “Read
Device Information” allows to read out device related
information such as ID−Header, Product Code, Silicon
Version and Category and the SPI−frame ID. While
receiving the command byte, the global status byte is
transmitted to the microcontroller. It contains global fault
information for the device, as shown in Table 7.
The SO data output driver is activated by a logical low
level at the CSB input and will go from high impedance to
a low or high level depending on the global status bit, FLT
(Global Error Flag). The first rising edge of the SCLK input
after a high to low transition of the CSB pin will transfer the
content of the selected register into the data out shift register.
Each subsequent falling edge of the SCLK will shift the next
bit thru SO out of the device.
Command Byte / Global Status Byte
Each communication frame starts with a command byte
(Table 3). It consists of an operation code (OP[1:0], Table 4)
which specifies the type of operation (Read, Write, Read &
Clear, Readout Device Information) and a six bit address
(A[5:0], Table 5). If less than six address bits are required,
ID Register
Chip ID Information is stored in five special 8−bit ID
registers (Table 6). The content can be read out at the
beginning of the communication.
Table 3. COMMAND BYTE / GLOBAL STATUS BYTE STRUCTURE
Command Byte (IN) / Global Status Byte (OUT)
23
22
21
20
19
18
17
16
NCV7710 IN
OP1
OP0
A5
A4
A3
A2
A1
A0
NCV7710 OUT
FLT
TF
RESB
TSD
TW
UOV_OC
ULD
NRDY
1
0
0
0
0
0
0
1
Bit
Reset Value
Table 4. COMMAND BYTE, ACCESS MODE
OP1
OP0
Description
0
0
Write Access (W)
0
1
Read Access ( R)
1
0
Read and Clear Access (RC)
1
1
Read Device ID (RDID)
Table 5. COMMAND BYTE, REGISTER ADDRESS
A[5:0]
Access
Description
Content
00h
R/W
Control Register
CONTROL_0
Device mode control, Bridge outputs control
02h
R/W
Control Register
CONTROL_2
Bridge outputs recovery control, PWM enable
03h
R/W
Control Register
CONTROL_3
Current Sense selection
10h
R/RC
Status Register
STATUS_0
Bridge outputs Overcurrent diagnosis
11h
R/RC
Status Register
STATUS_1
Bridge outputs Underload diagnosis
12h
R/RC
Status Register
STATUS_2
Vs Over− and Undervoltage
3Fh
R/W
Configuration Register
CONFIG
Mask bits for global fault bits, PWM mapping
www.onsemi.com
15
NCV7710
Table 6. CHIP ID INFORMATION
A[5:0]
Access
Description
Content
00h
RDID
ID header
4300h
01h
RDID
Version
0000h
02h
RDID
Product Code 1
7700h
03h
RDID
Product Code 2
0A00h
3Eh
RDID
SPI−Frame ID
0200h
Table 7. GLOBAL STATUS BYTE CONTENT
FLT
Global Fault Bit
0
No fault Condition
1
Fault Condition
TF
Failures of the Global Status Byte, bits [6:0] are always linked to the Global Fault Bit FLT. This bit
is generated by an OR combination of all failure bits of the device (RESB inverted). It is reflected
via the SO pin while CSB is held low and NO clock signal is present (before first positive edge of
SCLK). The flag will remain valid as long as CSB is held low. This operation does not cause the
Transmission error Flag in the Global Status Byte to be set. Signals TW and ULD can be masked.
SPI Transmission Error
0
No Error
1
Error
RESB
If the number of clock pulses within the previous frame was unequal 0 (FLT polling) or 24. The
frame was ignored and this flag was set.
Reset Bar (Active low)
0
Reset
1
Normal Operation
TSD
Bit is set to “0” after a Power−on−Reset or a stuck−at−1 fault at SI (SPI−input data = FFFFFFh)
has been detected. All outputs are disabled.
Overtemperature Shutdown
0
No Thermal Shutdown
1
Thermal Shutdown
TW
Thermal Shutdown Status indication. In case of a Thermal Shutdown, all output drivers including
the charge pump output are deactivated (high impedance). The TSD bit has to be cleared thru a
SW reset to reactivate the output drivers and the chargepump output.
Thermal Warning
0
No Thermal Warning
1
Thermal Warning
UOV_OC
This bit indicates a pre−warning level of the junction temperature. It is maskable by the
Configuration Register (CONFIG.NO_TW).
VS Monitoring, Overcurrent Status
0
No Fault
1
Fault
ULD
This bit represents a logical OR combination of under−/overvoltage signals (VS) and overcurrent
signals.
Underload
0
No Underload
1
Underload
NRDY
This bit represents a logical OR combination of all underload signals. It is maskable by the
Configuration Register (CONFIG.NO_ULDx).
Not Ready
0
Device Ready
1
Device Not Ready
After transition from Standby to Active mode, an internal timer is started to allow the internal
chargepump to settle before any outputs can be activated. This bit is cleared automatically after
the startup is completed.
www.onsemi.com
16
NCV7710
SPI REGISTERS CONTENT
CONTROL_0 Register
Address: 00h
Bit
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
Access type
−
−
−
−
−
−
RW
RW
RW
RW
−
−
−
−
−
RW
Bit name
0
0
0
0
0
0
HS1
LS1
HS2
LS2
0
0
0
0
0
MODE
Reset value
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
HS/LS
Outputs
Control
HSx
LSx
Description
0
0
0
1
LSx enabled
1
0
HSx enabled
1
1
OUTx High impedance /
LS or HS enabled in PWM
default
OUTx High impedance
MODE
Mode
Control
Remark
If a driver is enabled by the control register AND the
corresponding PWM enable bit is set in CONTROL_2
register, the HS output is activated if PWM1 (PWM2)
input signal is high, LS is activated otherwise.
Since OUT1 and OUT2 are half−bridge outputs,
activating both HS and LS at the same time is prevented
by internal logic.
Description
0
default
1
Remark
If MODE is set, the device is switched to Active mode.
Resetting MODE forces the device to transition into
Standby mode, all internal memory is cleared, all output
stages are switched into their default state (off).
Standby
Active
CONTROL_2 Register
Address: 02h
Bit
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
Access type
−
−
−
RW
RW
−
−
−
−
−
−
RW
RW
−
−
−
Bit name
0
0
0
0
0
0
0
0
0
0
0
0
Reset value
0
0
0
0
0
0
0
0
0
0
0
0
OCR1 OCR2
0
OCRx
Overcurrent
Recovery
0
Description
default
OUTx PWM
PWM1/2
Selection
1
Overcurrent Recovery
disabled
Description
default
0
0
Remark
Overcurrent Recovery
enabled
1
0
0
OUT1 OUT2
PWM1 PWM2
During an overcurrent event the overcurrent status bit
STATUS_0.OCx is set and the dedicated output is
switched off. (The global multi bit UOV_OC is set, also).
When the overcurrent recovery bit is enabled, the output
will be reactivated automatically after a programmable
delay time (CONTROL_3.OCRF).
Remark
For the outputs it is possible to select the PWM input
pins PWM1 or PWM2. In this case the dedicated output
(selected in CONTROL_0 register) is on if the PWM input
signal is high. By default, OUT2 is controlled by PWM2,
OUT1 is controlled by PWM1. By setting
CONFIG.PWM_SWAP bit, both outputs are mapped to
PWM1
PWMx not selected
PWMx selected
www.onsemi.com
17
NCV7710
CONTROL_3 Register
Address: 03h
Bit
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
Access type
−
−
−
−
−
−
−
−
−
−
RW
RW
−
RW
RW
RW
Bit name
0
0
0
0
0
0
0
0
0
0
0
IS2
IS1
IS0
Reset value
0
0
0
0
0
0
0
0
0
0
0
0
0
0
OCRF
Overcurrent
Recovery
Frequency
Selection
default
0
Remark
Slow Overcurrent recovery
mode
If the overcurrent recovery bit is set, the output will be
switched on automatically after a delay time.
Fast Overcurrent recovery
mode
1
OVUVR
Description
0
default
Remark
Over− and undervoltage
recovery function enabled
If the OV/UV recovery is disabled by setting
OVUVR=1, the status register STATUS_2 bits VSOV
or VSUV have to be cleared after an OV/UV event to
reactivate the outputs.
No over− and undervoltage
recovery
1
IS2
IS1
IS0
Description
0
0
0
current sensing deactivated
0
0
1
current sensing deactivated
0
1
0
current sensing deactivated
0
1
1
OUT1
1
0
0
OUT2
1
0
1
current sensing deactivated
1
1
0
current sensing deactivated
1
1
1
current sensing deactivated
Current
Sensing
Selection
0
Description
0
Over−/Under−
voltage
Recovery
OCRF OVUVR
Remark
The current in high−side power stages can be
monitored at the bidirectional multifunctional pin
ISOUT/PWM2.
This pin is a multifunctional pin and can be activated
as output by setting the current selection bits IS[2:0].
The selected high−side output will be multiplexed to
the output ISOUT.
STATUS_0 Register
Address: 10h
Bit
D15
D14
D13
D12
D11
D10
Access type
−
−
−
−
−
−
Bit name
0
0
0
0
0
Reset value
0
0
0
0
0
OCx
Overcurrent
Detection
D9
D8
D7
D5
D4
D3
D2
D1
D0
R/RC R/RC R/RC R/RC
−
−
−
−
−
−
0
OC
HS1
OC
LS1
OC
HS2
OC
LS2
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Description
0
No overcurrent detected
1
Overcurrent detected
D6
Remark
During an overcurrent event in one of the HS or LS, the belonging overcurrent
status bit STATUS_0.OCx is set and the dedicated output is switched off. (The
global multi bit UOV_OC is set, also). When the overcurrent recovery bit is
enabled, the output will be reactivated automatically after a programmable
delay time (CONTROL_3.OCRF). If the overcurrent recovery bit is not set the
microcontroller has to clear the OC failure bit and to reactivate the output stage
again.
www.onsemi.com
18
NCV7710
STATUS_1 Register
Address: 11h
Bit
D15
D14
D13
D12
D11
D10
Access type
−
−
−
−
−
−
Bit name
0
0
0
0
0
Reset value
0
0
0
0
0
ULDx
Description
0
No underload detected
1
Underload detected
Underload
Detection
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
R/RC R/RC R/RC R/RC
−
−
−
−
−
−
0
ULD
HS1
ULD
LS1
ULD
HS2
ULD
LS2
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Remark
For each output stage an underload status bit ULD is available. The underload
detection is done in “on−mode”. If the load current is below the undercurrent
detection threshold for at least td_uld , the corresponding underload bit ULDx is
set.
If an ULD event occurs the global status bit ULD will be set. With setting
CONFIG.NO_ULD_OUTn the global ULD failure bit is deactivated in general.
STATUS_2 Register
Address: 12h
Bit
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
Access type
−
−
−
−
−
−
−
−
−
−
−
−
Bit name
0
0
0
0
0
0
0
0
0
0
0
0
Reset value
0
0
0
0
0
0
0
0
0
0
0
0
VSUV
Vs Undervoltage
Vs Overvoltage
Description
No undervoltage detected
1
Undervoltage detected
Description
0
No overvoltage detected
1
Overvoltage detected
D1
D0
R/RC R/RC
−
−
VSUV VSOV
0
0
0
0
0
D2
0
Remark
0
VSOV
D3
In case of an Vs undervoltage event, the output stages will be deactivated
immediately and the corresponding failure flag will be set. By default the
output stages will be reactivated automatically after Vs is recovered unless
the control bit CONTROL_3.OVUVR is set. If this is the case (OVUVR=1)
the bit VSUV has to be cleared after an UV event.
Remark
In case of an Vs overvoltage event, the output stages will be deactivated
immediately and the corresponding failure flag will be set. By default the
output stages will be reactivated automatically after Vs is recovered unless
the control bit CONTROL_3.OVUVR is set. If this is the case (OVUVR=1)
the bit VSOV has to be cleared after an OV event.
www.onsemi.com
19
NCV7710
CONFIG Register
Address: 3Fh
Bit
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
Access type
−
−
−
−
−
−
−
−
−
−
−
−
RW
−
RW
RW
Bit name
0
0
0
0
0
0
0
0
0
0
0
0
NO_TW
0
Reset value
0
0
0
0
0
0
0
0
0
0
0
0
0
0
NO_TW
No Thermal
Warning Flag
0
Description
default
1
No thermal warning flag active
NO_ULD OUTn
Global
Undeload
Flag OUTn
0
Description
default
1
0
1
Global underload flag active
No global underload flag active
PWM_SWAP
OUT2 PWM
Mapping
Thermal warning flag active
Description
default
OUT2 mapped to PWM2
OUT2 mapped to PWM1
NO_ULD PWM
OUTn SWAP
0
0
Remark
The global thermal warning bit TW can be
deactivated.
Remark
By setting CONFIG.NO_ULD_OUTn the
global ULD failure bit is deactivated in
general.
Remark
By setting PWM_SWAP bit, both outputs are
mapped to PWM1
ORDERING INFORMATION
Device
NCV7710DQR2G
Package
Shipping†
SSOP36−EP
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
20
NCV7710
PACKAGE DIMENSIONS
SSOP36 EP
CASE 940AB
ISSUE A
0.20 C A-B
D
4X
E1
1
X = A or B
e/2
E
DETAIL B
36X
0.25 C
18
e
36X
B
b
0.25
TOP VIEW
A
H
X
19
ÉÉÉ
ÉÉÉ
PIN 1
REFERENCE
D
DETAIL B
A
36
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.13 TOTAL IN
EXCESS OF THE b DIMENSION AT MMC.
4. DIMENSION b SHALL BE MEASURED BETWEEN 0.10 AND 0.25 FROM THE TIP.
5. DIMENSIONS D AND E1 DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS OR GATE
BURRS. DIMENSIONS D AND E1 SHALL BE
DETERMINED AT DATUM H.
6. THIS CHAMFER FEATURE IS OPTIONAL. IF
IT IS NOT PRESENT, A PIN ONE IDENTIFIER
MUST BE LOACATED WITHIN THE INDICATED AREA.
M
T A
S
B
S
NOTE 6
h
A2
DETAIL A
c
h
0.10 C
36X
SIDE VIEW
A1
C
END VIEW
SEATING
PLANE
D2
M1
M
GAUGE
PLANE
E2
L2
C
SEATING
PLANE
36X
L
DETAIL A
BOTTOM VIEW
SOLDERING FOOTPRINT
5.90
36X
1.06
4.10
10.76
1
36X
0.50
PITCH
0.36
DIMENSIONS: MILLIMETERS
www.onsemi.com
21
DIM
A
A1
A2
b
c
D
D2
E
E1
E2
e
h
L
L2
M
M1
MILLIMETERS
MIN
MAX
--2.65
--0.10
2.15
2.60
0.18
0.30
0.23
0.32
10.30 BSC
5.70
5.90
10.30 BSC
7.50 BSC
3.90
4.10
0.50 BSC
0.25
0.75
0.50
0.90
0.25 BSC
0_
8_
5_
15 _
NCV7710
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
22
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCV7710/D