PANASONIC MA3S781

Schottky Barrier Diodes (SBD)
MA3S781
Silicon epitaxial planar type
Unit : mm
0.28 ± 0.05
For the switching circuit
3
Symbol
Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage
VRM
30
V
Forward current (DC)
IF
30
mA
Peak forward current
IFM
150
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
0.60 − 0.03
+ 0.05
0.12 − 0.02
+ 0.05
0.28 ± 0.05
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
1
+ 0.05
• 1608 type diode contained in the (SS-mini) package
• Surface mounting, allowing high-density mounting
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
• Low VF (forward rise voltage), with high rectification efficiency
1.60 ± 0.1
0.80 ± 0.05
0.28 ± 0.05
1.60 − 0.03
0.80
0.80
0.51
0.51
■ Features
0.80
0.44
0.44
+ 0.05
0.88 − 0.03
1 : Cathode
2 : NC
3 : Anode
SS-Mini Type Package (3-pin)
Marking Symbol: M1L
Internal Connection
1
3
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 30 V
300
nA
Forward voltage (DC)
VF1
IF = 1 mA
0.4
V
VF2
IF = 30 mA
Terminal capacitance
Ct
VR = 1 V, f = 1 MHz
1.5
1
pF
V
Reverse recovery time*
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0
ns
Detection efficiency
η
Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
MA3S781
Schottky Barrier Diodes (SBD)
IF  V F
1.4
75°C 25°C
10
1
10−1
Reverse current IR (µA)
102
− 20°C
Ta = 125°C
Forward voltage VF (V)
Forward current IF (mA)
103
1.6
102
1.2
1.0
0.8
IF = 30 mA
0.6
0.4
0
0.2
0.4
0.6
0.8
1.0
10
75°C
1
25°C
1 mA
0
−40
1.2
Ta = 125°C
10−1
3 mA
0.2
10−2
IR  VR
VF  Ta
103
Forward voltage VF (V)
10−2
0
40
80
120
160
200
0
IR  T a
5
10
20
25
30
IF(surge)  tW
Ct  VR
103
15
Reverse voltage VR (V)
Ambient temperature Ta (°C)
1 000
3.0
VR = 30 V
10 V
1V
10
1
10−1
10−2
−40
40
80
120
Ambient temperature Ta
2
2.5
2.0
1.5
1.0
0.5
0
0
160
(°C)
200
Forward surge current IF(surge) (A)
Reverse current IR (µA)
102
Terminal capacitance Ct (pF)
Ta = 25°C
0
5
10
15
20
25
Reverse voltage VR (V)
30
300
IF(surge)
tW
100
30
10
3
1
0.3
0.1
0.03
0.1
0.3
1
3
10
Pulse width tW (ms)
30