EMF5XV6T5 D

EMF5XV6T5
Preferred Devices
Power Management,
Dual Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
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Features
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are Pb−Free Devices
(3)
(2)
Q1
Q2
MAXIMUM RATINGS
Rating
R2
Symbol
Value
(4)
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
ESD
VCEO
Collector-Base Voltage
Emitter-Base Voltage
HBM Class 1
MM Class B
Electrostatic Discharge
Vdc
VCBO
−15
Vdc
VEBO
−6.0
Vdc
IC
−1.0 (Note 1)
−0.5
Adc
ESD
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
1
Symbol
Characteristic
(Both Junctions Heated)
Unit
357 (Note 2)
2.9 (Note 2)
mW
mW/°C
RqJA
350 (Note 2)
°C/W
UY = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Symbol
Max
Unit
ORDERING INFORMATION
500 (Note 2)
4.0 (Note 2)
mW
mW/°C
PD
Total Device Dissipation
TA = 25°C
Derate above 25°C
RqJA
250 (Note 2)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Single pulse 1.0 ms.
2. FR−4 @ Minimum Pad.
© Semiconductor Components Industries, LLC, 2005
Package
Shipping †
EMF5XV6T5
SOT−563
(Pb−Free)
8000/Tape & Reel
EMF5XV6T5G
SOT−563
(Pb−Free)
8000/Tape & Reel
Device
PD
Thermal Resistance,
Junction-to-Ambient
November, 2005 − Rev. 2
UY M G
G
Max
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
(6)
1
−12
Collector Current − Peak
Collector Current − Continuous
(5)
6
Q2 (TA = 25°C)
Collector-Emitter Voltage
R1
Unit
Q1 (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Electrostatic Discharge
(1)
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
EMF5XV6T5/D
EMF5XV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max
Unit
Q1
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
0.1
mAdc
(IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
(VCE = 10 V, IC = 5.0 mA)
hFE
80
140
−
(IC = 10 mA, IB = 0.3 mA)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 3)
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
VCE(sat)
−
−
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
−
−
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
−
−
Vdc
Input Resistor
R1
32.9
47
61.1
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Q2
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−12
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−15
−
−
Vdc
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
−6.0
−
−
Vdc
Collector Cutoff Current
(VCB = −15 Vdc, IE = 0)
ICBO
−
−
−0.1
mAdc
(VEB = −6.0 Vdc)
IEBO
−
−
−0.1
mAdc
DC Current Gain (Note 4)
(IC = −10 mA, VCE = −2.0 V)
hFE
270
−
680
Collector −Emitter Saturation Voltage (Note 4)
(IC = −200 mA, IB = −10 mA)
VCE(sat)
−
−
−250
mV
Base −Emitter Saturation Voltage (Note 4)
(IC = −150 mA, IB = −20 mA)
VBE(sat)
−
−0.81
−0.90
V
(IC = −150 mA, VCE = −3.0 V)
VBE(on)
−
−0.81
−0.875
V
Emitter Cutoff Current
ON CHARACTERISTICS
Base −Emitter Turn−on Voltage (Note 4)
Input Capacitance
(VEB = 0 V, f = 1.0 MHz)
Cibo
−
52
−
pF
Output Capacitance
(VCB = 0 V, f = 1.0 MHz)
Cobo
−
30
−
pF
Turn−On Time
(IBI = −50 mA, IC = −500 mA, RL = 3.0 W)
ton
−
50
−
ns
Turn−Off Time
(IB1 = IB2 = −50 mA, IC = −500 mA, RL = 3.0 W)
toff
−
80
−
ns
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RqJA = 833°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
150
EMF5XV6T5
10
1000
IC/IB = 10
1
25°C
TA=−25°C
0.01
0
25°C
−25°C
10
50
20
40
IC, COLLECTOR CURRENT (mA)
TA=75°C
100
75°C
0.1
VCE = 10 V
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS
TYPICAL ELECTRICAL CHARACTERISTICS FOR Q1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
1
100
IC, COLLECTOR CURRENT (mA)
0.4
TA=−25°C
10
1
0.1
0.01
0.2
0
25°C
75°C
0.6
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
VO = 5 V
0
Figure 4. Output Capacitance
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
Figure 5. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
Figure 3. DC Current Gain
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
100
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage versus Output Current
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3
10
EMF5XV6T5
TYPICAL ELECTRICAL CHARACTERISTICS FOR Q2
0.1
1
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
1
IC/IB = 200
100
50
0.01
10
TA = 25°C
0.001
0.001
0.01
−55°C
0.1
TA = 125°C
Figure 7. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 8. Collector Emitter Saturation Voltage
vs. Collector Current
1
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
500
125°C
400
300
25°C
200
TA = −55°C
100
0.001
0.01
0.1
IC/IB = 50
25°C
0.1
−55°C
TA = 125°C
0.01
0.001
1
IC, COLLECTOR CURRENT (AMPS)
1
1.2
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
TA = 25°C
0.9
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.1
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
1
0.8
IC = 1.0 A
0.7
0.6
0.5
0.4
500 mA
50 mA
250 mA
0.2
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
Figure 9. DC Current Gain
0.3
1
IC, COLLECTOR CURRENT (AMPS)
VCE = 1.0 V
0
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
600
hFE, DC CURRENT GAIN
25°C
0.01
0.001
1
0.1
IC/IB = 100
10 mA
5.0 mA
0
0.00001
0.0001
1
−55°C
0.8
25°C
TA = 125°C
0.6
0.4
0.2
100 mA
0.001
0.01
0.1
1
0
0.001
IB, BASE CURRENT (AMPS)
0.01
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Collector Emitter Saturation Voltage
vs Base Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
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4
1
EMF5XV6T5
55
VCE = 3.0 V
Cibo, INPUT CAPACITANCE
1
−55°C
0.8
25°C
0.6
TA = 125°C
0.4
0.2
0
0.001
0.01
0.1
1
f = 1 MHz
IC = 0 A
TA = 25°C
50
45
40
35
30
25
20
0
1
2
3
4
IC, COLLECTOR CURRENT (AMPS)
VEB, EMITTER BASE VOLTAGE
Figure 13. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 14. Input Capacitance
35
Cobo, OUTPUT CAPACITANCE
VBE(on), BASE EMITTER TURN−ON
VOLTAGE (V)
1.2
f = 1 MHz
IE = 0 A
TA = 25°C
30
25
20
15
10
0
2
4
6
8
10
VCB, COLLECTOR BASE VOLTAGE
Figure 15. Output Capacitance
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5
12
14
5
6
EMF5XV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
6
5
1
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
L
4
3
E
−Y−
HE
b 65 PL
0.08 (0.003)
DIM
A
b
C
D
E
e
L
HE
C
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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EMF5XV6T5/D
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