BD136 D

BD136G, BD138G, BD140G
Plastic Medium-Power
Silicon PNP Transistors
This series of plastic, medium−power silicon PNP transistors are
designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
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Features
• High DC Current Gain
• BD 136, 138, 140 are complementary with BD 135, 137, 139
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
1.5 A POWER TRANSISTORS
PNP SILICON
45, 60, 80 V, 12.5 W
COLLECTOR
2, 4
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD136G
BD138G
BD140G
VCEO
Collector−Base Voltage
BD136G
BD138G
BD140G
VCBO
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
1.5
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
1.25
10
Watts
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
12.5
100
Watts
mW/°C
– 55 to + 150
°C
Operating and Storage Junction
Temperature Range
Vdc
3
BASE
45
60
80
1
EMITTER
Vdc
45
60
100
TJ, Tstg
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
YWW
BD1xxG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Y
WW
BD1xx
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
10
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
100
°C/W
G
= Year
= Work Week
= Device Code
xx = 36, 38, 40
= Pb−Free Package
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 16
1
Package
Shipping
BD136G
TO−225
(Pb−Free)
500 Units/Box
BD138G
TO−225
(Pb−Free)
500 Units/Box
BD140G
TO−225
(Pb−Free)
500 Units/Box
Publication Order Number:
BD136/D
BD136G, BD138G, BD140G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.03 Adc, IB = 0)
BD136G
BD138G
BD140G
BVCEO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TC = 125 _C)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
DC Current Gain
(IC = 0.005 A, VCE = 2 V)
(IC = 0.15 A, VCE = 2 V)
(IC = 0.5 A, VCE = 2 V)
hFE*
Collector−Emitter Saturation Voltage (Note 1)
(IC = 0.5 Adc, IB = 0.05 Adc)
VCE(sat)*
Base−Emitter On Voltage (Note 1)
(IC = 0.5 Adc, VCE = 2.0 Vdc)
VBE(on)*
Min
Max
Unit
Vdc
45
60
80
−
−
−
−
−
0.1
10
−
10
25
40
25
−
250
−
−
0.5
−
1
mAdc
mAdc
−
Vdc
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
0.5
1000
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 2 V
150°C
25°C
−55°C
100
10
IC/IB = 10
−55°C
0.4
0.3
25°C
150°C
0.2
0.1
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
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2
BD136G, BD138G, BD140G
1.2
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
0.01
0.1
1
10
VBE(on), BASE−EMITTER ON VOLTAGE (V)
TYPICAL CHARACTERISTICS
VCE = 2 V
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base−Emitter Saturation Voltage
Figure 4. Base−Emitter On Voltage
10
1000
IC, COLLECTOR CURRENT (A)
f = 1 MHz
Cib
100
Cob
10
0.1 ms
5 ms
0.5 ms
1
TJ = 125°C
dc
0.1
BD136
BD138
BD140
0.01
1
0.1
1
10
1
100
10
VR, REVERSE VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Capacitance
Figure 6. Active−Region Safe Operating Area
1.50
PD, POWER DISSIPATION (W)
C, CAPACITANCE (pF)
1.2
1.25
1.00
0.75
0.50
0.25
0
0
20
40
60
80
100
120
TA, AMBIENT TEMPERATURE (°C)
Figure 7. Power Derating
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3
140
160
80
BD136G, BD138G, BD140G
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
4
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
D
P
1
2
3
L1
L
2X
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
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BD136/D
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