2N3771 D

2N3771, 2N3772
2N3771 is a Preferred Device
High Power NPN Silicon
Power Transistors
These devices are designed for linear amplifiers, series pass
regulators, and inductive switching applications.
Features
http://onsemi.com
• Forward Biased Second Breakdown Current Capability
•
IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771
= 2.5 Adc @ VCE = 60 Vdc − 2N3772
Pb−Free Packages are Available*
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20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS, 150 WATTS
MAXIMUM RATINGS (Note 1)
Symbol
2N3771
2N3772
Unit
Collector−Emitter Voltage
Rating
VCEO
40
60
Vdc
Collector−Emitter Voltage
VCEX
50
80
Vdc
Collector−Base Voltage
VCB
50
100
Vdc
Emitter−Base Voltage
VEB
5.0
7.0
Vdc
Collector Current − Continuous
Peak
IC
30
30
20
30
Adc
Base Current −
IB
7.5
15
5.0
15
Adc
Continuous
Peak
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
150
0.855
W
W/°C
TJ, Tstg
– 65 to + 200
°C
MARKING
DIAGRAM
TO−204AA (TO−3)
CASE 1−07
STYLE 1
2N377x
G
A
YY
WW
MEX
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
Max
Unit
qJC
1.17
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
2N377xG
AYYWW
MEX
= Device Code
x = 1 or 2
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
ORDERING INFORMATION
Device
2N3771
2N3771G
2N3772
2N3772G
Package
Shipping
TO−204
100 Units / Tray
TO−204
(Pb−Free)
100 Units / Tray
TO−204
100 Units / Tray
TO−204
(Pb−Free)
100 Units / Tray
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 11
1
Publication Order Number:
2N3771/D
2N3771, 2N3772
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2 and 3)
(IC = 0.2 Adc, IB = 0)
2N3771
2N3772
VCEO(sus)
40
60
−
−
Vdc
Collector−Emitter Sustaining Voltage
(IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 W)
2N3771
2N3772
VCEX(sus)
50
80
−
−
Vdc
Collector−Emitter Sustaining Voltage
(IC = 0.2 Adc, RBE = 100 W)
2N3771
2N3772
VCER(sus)
45
70
−
−
Vdc
Collector Cutoff Current (Note 2)
(VCE = 30 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
(VCE = 25 Vdc, IB = 0)
2N3771
2N3772
−
−
10
10
−
−
−
−
−
2.0
5.0
4.0
10
10
−
−
2.0
5.0
−
−
5.0
5.0
2N3771
2N3772
15
15
60
60
2N3771
2N3772
5.0
5.0
−
−
−
−
−
−
2.0
1.4
4.0
4.0
−
−
2.7
2.2
ICEO
Collector Cutoff Current (Note 2)
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 100 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 45 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
mAdc
ICEV
2N3771
2N3772
2N6257
2N3771
2N3772
(VCE = 45 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
Collector Cutoff Current (Note 2)
(VCB = 50 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
2N3771
2N3772
Emitter Cutoff Current (Note 2)
(VBE = 5.0 Vdc, IC = 0)
(VBE = 7.0 Vdc, IC = 0)
2N3771
2N3772
mAdc
ICBO
mAdc
IEBO
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (Note 3)
(IC = 15 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
(IC = 30 Adc, VCE = 4.0 Vdc)
(IC = 20 Adc, VCE = 4.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 15 Adc, IB = 1.5 Adc)
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 30 Adc, IB = 6.0 Adc)
(IC = 20 Adc, IB = 4.0 Adc)
2N3771
2N3772
2N3771
2N3772
Base−Emitter On Voltage
(IC = 15 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
2N3771
2N3772
−
VCE(sat)
Vdc
VBE(on)
Vdc
*DYNAMIC CHARACTERISTICS (Note 2)
Current−Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz)
fT
0.2
−
MHz
Small−Signal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
40
−
−
3.75
2.5
−
−
SECOND BREAKDOWN
Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non−repetitive)
(VCE = 40 Vdc)
2N3771
(VCE = 60 Vdc)
2N3772
2. Indicates JEDEC registered data.
3. Pulse Test: 300 ms, Rep. Rate 60 cps.
http://onsemi.com
2
IS/b
Adc
2N3771, 2N3772
PD, POWER DISSIPATION (WATTS)
200
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
175
200
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 1. Power Derating
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.02
P(pk)
qJC(t) = r(t) qJC
qJC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) − TC = P(pk) qJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.01
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
20
50
100
200
500
1000
2000
Figure 2. Thermal Response — 2N3771, 2N3772
40
IC, COLLECTOR CURRENT (AMP)
30
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I C − V CE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
Figure 3 is based on JEDEC registered Data. Second
breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) < 200_C. TJ(pk) may be calculated from the
data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, TJ(pk) will be found to be less than TJ(max)
for pulse widths of 1 ms and less. When using ON
Semiconductor transistors, it is permissible to increase the
pulse power limits until limited by T J(max).
40 ms
2N3771
20
100 ms
2N3772, (dc)
dc
200 ms
TC = 25°C
1.0 ms
BONDING WIRE LIMITED
7.0
THERMALLY LIMITED
5.0
(SINGLE PULSE)
100 ms
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
3.0 PULSE CURVES APPLY
500 ms
2N3771
FOR ALL DEVICES
2N3772
2.0
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
Figure 3. Active−Region Safe Operating Area
— 2N3771, 2N3772
http://onsemi.com
3
2N3771, 2N3772
VCC
+30 V
10
5.0
25 ms
RC
+11 V
2.0
SCOPE
0
D1
51
−9.0 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
tr
0.5
0.2
0.1
−4 V
td
0.05
RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.02
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
0.01
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 4. Switching Time Test Circuit
TJ = 25°C
10
C, CAPACITANCE (pF)
20
t, TIME (s)
μ
30
2000
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
50
5.0
ts
1.0
0.5
20
Figure 5. Turn−On Time
100
2.0
VBE(off) = 5.0 V
1.0
t, TIME (s)
μ
RB
VCC = 30
IC/IB = 10
TJ = 25°C
tf
1000
Cib
700
Cob
500
300
0.2
0.1
0.3
0.5
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
20
200
0.1
30
0.5
10 20
1.0 2.0
5.0
VR, REVERSE VOLTAGE (VOLTS)
0.2
Figure 6. Turn−Off Time
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
TJ = 150°C
VCE = 4.0 V
25°C
100
70
50
−55 °C
30
20
10
7.0
5.0
0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
100
Figure 7. Capacitance
500
300
200
50
20
30
2.0
TJ = 25°C
1.6
IC = 2.0 A
5.0 A
10 A
20 A
1.2
0.8
0.4
0
0.01 0.02
0.5
1.0 2.0
0.05 0.1 0.2
IC, COLLECTOR CURRENT (AMP)
5.0
Figure 9. Collector Saturation Region
Figure 8. DC Current Gain
http://onsemi.com
4
10
2N3771, 2N3772
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A
N
C
−T−
E
D
SEATING
PLANE
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
−Y−
L
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
−−− 1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
−−− 0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
−−− 26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
−−− 21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
M
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