2N3773 D

2N3773
NPN Power Transistors
The 2N3773 is a PowerBaset power transistor designed for high
power audio, disk head positioners and other linear applications. This
device can also be used in power switching circuits such as relay or
solenoid drivers, DC−DC converters or inverters.
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Features
• High Safe Operating Area (100% Tested) 150 W @ 100 V
• Completely Characterized for Linear Operation
• High DC Current Gain and Low Saturation Voltage
•
•
16 A NPN
POWER TRANSISTORS
140 V, 150 W
hFE = 15 (Min) @ 8.0 A, 4.0 V
VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A
For Low Distortion Complementary Designs
This is a Pb−Free Device
MARKING
DIAGRAM
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
140
Vdc
Collector − Emitter Voltage
VCEX
160
Vdc
Collector − Base Voltage
VCBO
160
Vdc
Emitter − Base Voltage
VEBO
7
Vdc
Collector Current
− Continuous
− Peak (Note 2)
IC
Base Current
IB
− Continuous
− Peak (Note 2)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Adc
16
30
Adc
4
15
PD
TJ, Tstg
TO−204
CASE 1−07
2N3773G
MEX
AYYWW
150
0.855
−65 to +200
A
YY
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
W
W/°C
ORDERING INFORMATION
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
Max
Unit
RqJC
1.17
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
April, 2013 − Rev. 11
1
Publication Order Number:
2N3773/D
2N3773
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 4)
(IC = 0.2 Adc, IB = 0)
VCEO(sus)
140
−
Vdc
Collector−Emitter Sustaining Voltage (Note 4)
(IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms)
VCEX(sus)
160
−
Vdc
Collector−Emitter Sustaining Voltage
(IC = 0.2 Adc, RBE = 100 Ohms)
VCER(sus)
150
−
Vdc
Collector Cutoff Current (Note 4)
(VCE = 120 Vdc, IB = 0)
ICEO
−
10
mAdc
Collector Cutoff Current (Note 4)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
−
−
2
10
Collector Cutoff Current
(VCB = 140 Vdc, IE = 0)
ICBO
−
2
mAdc
Emitter Cutoff Current (Note 4)
(VBE = 7 Vdc, IC = 0)
IEBO
−
5
mAdc
15
5
60
−
−
−
1.4
4
OFF CHARACTERISTICS (Note 3)
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc) (Note 4)
(IC = 16 Adc, VCE = 4 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 800 mAdc) (Note 4)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
Vdc
Base−Emitter On Voltage (Note 4)
(IC = 8 Adc, VCE = 4 Vdc)
VBE(on)
−
2.2
Vdc
Magnitude of Common−Emitter
Small−Signal, Short−Circuit, Forward Current Transfer Ratio
(IC = 1 A, f = 50 kHz)
|hfe|
4
−
−
Small−Signal Current Gain (Note 4)
(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)
hfe
40
−
−
IS/b
1.5
−
Adc
DYNAMIC CHARACTERISTICS
SECOND BREAKDOWN CHARACTERISTICS
Second Breakdown Collector Current with Base Forward Biased
t = 1 s (non−repetitive), VCE = 100 V, See Figure 12
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
4. Indicates JEDEC Registered Data.
ORDERING INFORMATION
Device
2N3773G
Package
Shipping†
TO−204
(Pb−Free)
100 Unit / Tray
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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2
2N3773
NPN
300
200
PNP
300
200
150°C
150°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
25°C
100
-55°C
25°C
70
50
VCE = 4 V
30
20
100
50
30
20
10
10
7.0
5.0
0.2 0.3
7.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMPS)
10
-55°C
70
VCE = 4 V
5.0
0.2 0.3
20
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMPS)
2.0
1.6
IC = 4 A
1.2
IC = 8 A
IC = 16 A
0.8
0.4
TC = 25°C
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (AMPS)
2.0 3.0
2.0
1.6
IC = 4 A
IC = 16 A
1.2
IC = 8 A
0.8
0.4
TC = 25°C
0
0.05 0.07 0.1
Figure 3. Collector Saturation Region
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (AMPS)
2.0 3.0
5.0
Figure 4. Collector Saturation Region
2.0
2.0
IC/IB = 10
IC/IB = 10
1.6
V, VOLTAGE (VOLTS)
1.6
V, VOLTAGE (VOLTS)
20
Figure 2. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
10
1.2
VBE(sat)
0.8
25°C
0.4
150°C
0
0.2 0.3
150°C
VCE(sat)
1.2
VBE(sat)
0.8
25°C
150°C
150°C
0.4
25°C
25°C
VCE(sat)
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
20
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. “On” Voltage
Figure 6. “On” Voltage
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3
10
20
2N3773
TYPICAL CHARACTERISTICS
10,000
f = 1 MHz
TA = 25°C
100
10
f = 1 MHz
TA = 25°C
CIB, INPUT CAPACITANCE (pF)
COB, OUTPUT CAPACITANCE (pF)
1000
1000
0
50
100
150
100
200
0
1
2
3
4
5
6
VCB, COLLECTOR−BASE VOLTAGE (V)
VEB, EMITTER−BASE VOLTAGE (V)
Figure 7. Output Capacitance
Figure 8. Input Capacitance
IC, COLLECTOR CURRENT (AMP)
30
20
8
10 ms
40 ms
10
5.0
3.0
2.0
7
100 ms
200 ms
1.0 ms
dc
100 ms
1.0
0.5
0.3
0.2
0.1
0.05
0.03
3.0
BONDING WIRE LIMIT
THERMAL LIMIT
@ TC = 25°C, SINGLE PULSE
SECOND BREAKDOWN LIMIT
500 ms
200 300
5.0 7.0 10
20
30
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 200_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
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4
2N3773
POWER DERATING FACTOR (%)
100
80
60
THERMAL
DERATING
40
20
0
0
40
80
120
TC, CASE TEMPERATURE (°C)
160
200
Figure 10. Power Derating
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
A
N
C
E
D
−T−
K
2 PL
0.13 (0.005)
U
V
SEATING
PLANE
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
−Y−
L
2
H
G
B
M
T Y
1
−Q−
0.13 (0.005)
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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2N3773/D
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