2N4918 D

2N4918 − 2N4920* Series
Preferred Device
Medium−Power Plastic PNP
Silicon Transistors
These medium−power, high−performance plastic devices are
designed for driver circuits, switching, and amplifier applications.
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Features
• Pb−Free Package is Available**
• Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A
• Excellent Power Dissipation Due to Thermopad Construction,
3.0 A, 40−80 V, 30 W
GENERAL PURPOSE
POWER TRANSISTORS
PD = 30 W @ TC = 25C
• Excellent Safe Operating Area
• Gain Specified to IC = 1.0 A
• Complement to NPN 2N4921, 2N4922, 2N4923
MAXIMUM RATINGS
Rating
Symbol
Collector − Emitter Voltage
Value
VCEO
2N4918
2N4919
2N4920
Collector − Base Voltage
Vdc
40
60
80
3
VCBO
2N4918
2N4919
2N4920
Emitter − Base Voltage
Vdc
5.0
Vdc
IC
(Note 2)
1.0
3.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
30
0.24
W
W/°C
TJ, Tstg
−65 to +150
°C
Operating and Storage Junction
Temperature Range
2 1
MARKING DIAGRAM
40
60
80
VEBO
Collector Current − Continuous
(Note 1)
TO−225
CASE 077
STYLE 1
Unit
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. The 1.0 A max IC value is based upon JEDEC current gain requirements. The
3.0 A max value is based upon actual current−handling capability of the
device (See Figure 5).
2. Indicates JEDEC Registered Data for 2N4918 Series.
YWW
2N
49xx
xx
Y
WW
= 18, 19, 20
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*Preferred devices are recommended choices for future
use and best overall value.
THERMAL CHARACTERISTICS (Note 3)
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
Max
Unit
JC
4.16
°C/W
3. Recommend use of thermal compound for lowest thermal resistance.
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 11
1
Publication Order Number:
2N4918/D
2N4918 − 2N4920* Series
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
60
80
−
−
−
−
−
−
0.5
0.5
0.5
−
−
0.1
0.5
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 4)
(IC = 0.1 Adc, IB = 0)
VCEO(sus)
2N4918
2N4919
2N4920
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
Vdc
ICEO
2N4918
2N4919
2N4920
mAdc
Collector Cutoff Current
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125C
ICEX
mAdc
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
−
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
1.0
mAdc
40
30
10
−
150
−
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage (Note 4)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
−
0.6
Vdc
Base−Emitter Saturation Voltage (Note 4)
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
−
1.3
Vdc
Base−Emitter On Voltage (Note 4)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
−
1.3
Vdc
fT
3.0
−
MHz
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
−
100
pF
Small−Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
25
−
−
4. Pulse Test: PW 300 s, Duty Cycle 2.0%
ORDERING INFORMATION
Package
Shipping†
2N4918
TO−225
500 Unit / Bulk
2N4919
TO−225
500 Unit / Bulk
2N4920
TO−225
500 Unit / Bulk
TO−225
(Pb−Free)
500 Unit / Bulk
Device
2N4920G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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2
2N4918 − 2N4920* Series
PD, POWER DISSIPATION (WATTS)
40
30
20
10
0
25
50
75
100
TC, CASE TEMPERATURE (°C)
125
150
Figure 1. Power Derating
VBE(off)
5.0
0
APPROX
−11 V
VCC
Vin
t1
t2
Vin
RB
APPROX
−11 V
0
t1 < 15 ns
100 < t2 < 500 s
t3 < 15 ns
t3
TURN−OFF PULSE
IC/IB = 10, UNLESS NOTED
TJ = 25°C
TJ = 150°C
2.0
SCOPE
Cjd<<Ceb
APPROX 9.0 V
VCC = 30 V
IC/IB = 20
3.0
RC
t, TIME (s)
µ
Vin
+4.0 V
RB and RC
varied to
obtain desired
current levels
1.0
0.7
0.5
tr
VCC = 60 V
0.3
0.2
0.1
0.07
0.05
DUTY CYCLE ≈ 2.0%
VCC = 30 V
td
VCC = 60 V
VBE(off) = 2.0 V
VCC = 30 V
VBE(off) = 0
10
Figure 2. Switching Time Equivalent Test Circuit
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 3. Turn−On Time
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3
500 700 1000
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
2N4918 − 2N4920* Series
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P(pk)
JC(t) = r(t) JC
JC = 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) − TC = P(pk) JC(t)
DUTY CYCLE, D = t1/t2
0.05
0.1
0.07
0.05
0.01
0.03
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
10
TJ = 150°C
2.0
100 s
1.0 ms
5.0 ms
5.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
dc
1.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMIT @ TC = 25°C
0.5
PULSE CURVES APPLY BELOW
RATED VCEO
0.2
0.1
1.0
2.0 3.0
5.0 7.0 10
20 30
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
70 100
Figure 5. Active−Region Safe Operating Area
5.0
5.0
IC/IB = 20
3.0
1.0
IC/IB = 10
0.7
0.5
ts′ = ts − 1/8 tf
0.3
0.2
0.1
0.07
0.05
IC/IB = 20
2.0
t f , FALL TIME (s)
µ
t s′, STORAGE TIME (s)
µ
3.0
2.0
TJ = 25°C
TJ = 150°C
IB1 = IB2
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
1.0
0.7
0.5
IC/IB = 10
0.3
0.2
0.1
0.07
0.05
500 700 1000
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
Figure 6. Storage Time
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4
TJ = 25°C
TJ = 150°C
VCC = 30 V
IB1 = IB2
500 700 1000
2N4918 − 2N4920* Series
hFE, DC CURRENT GAIN
1000
700
500
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
TYPICAL DC CHARACTERISTICS
VCE = 1.0 V
TJ = 150°C
300
200
25°C
100
70
50
−55 °C
30
20
10
2.0 3.0 5.0
10
20 30 50 100 200 300 500
IC, COLLECTOR CURRENT (mA)
1000 2000
1.0
IC = 0.1 A
108
TJ = 25°C
0.4
0.2
0
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10 20 30
IB, BASE CURRENT (mA)
100
50
200
1.5
VCE = 30 V
IC = 10 ICES
107
1.2
106
VOLTAGE (VOLTS)
RBE , EXTERNAL BASE−EMITTER RESISTANCE (OHMS)
1.0 A
Figure 9. Collector Saturation Region
IC ≈ ICES
105
IC = 2x ICES
ICES VALUES
OBTAINED FROM
FIGURE 13
104
0
30
60
TJ = 25°C
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
VCE(sat) @ IC/IB = 10
90
120
0
2.0 3.0 5.0
150
10
20 30
50
100
200 300 500 1000 2000
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Figure 10. Effects of Base−Emitter Resistance
Figure 11. “On” Voltage
102
+2.5
TEMPERATURE COEFFICIENTS (mV/ °C)
IC, COLLECTOR CURRENT (A)
µ
0.5 A
0.6
Figure 8. Current Gain
103
0.25 A
0.8
101
TJ = 150°C
100
10−1
100°C
10− 2
IC = ICES
VCE = 30 V
104
REVERSE
103
−0.2
−0.1
25°C
FORWARD
0
+0.1
+0.2
+0.3
+0.4
+2.0
*APPLIES FOR IC/IB <
+1.5
+1.0
TJ = 100°C to 150°C
+0.5
*VC FOR VCE(sat)
0
TJ = −55°C to +100°C
−0.5
−1.0
−1.5
VB FOR VBE
−2.0
−2.5
2.0 3.0 5.0
+0.5
[email protected] 1.0V
2
10
20 30
50
100 200 300 500
1000 2000
VBE, BASE−EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 12. Collector Cut−Off Region
Figure 13. Temperature Coefficients
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5
2N4918 − 2N4920* Series
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
−B−
U
F
Q
−A−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
C
M
1 2 3
H
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
−−−
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
−−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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2N4918/D
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