2N5684 D

2N5684 (PNP), 2N5686 (NPN)
High-Current
Complementary Silicon
Power Transistors
These packages are designed for use in high-power amplifier and
switching circuit applications.
Features
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50 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80 VOLTS, 300 WATTS
•High Current Capability - IC Continuous = 50 Amperes
•DC Current Gain - hFE = 15-60 @ IC = 25 Adc
•Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
•Pb-Free Packages are Available*
MARKING
DIAGRAM
MAXIMUM RATINGS (Note 1)
Rating
Collector-Emitter Voltage
Symbol
Value
Unit
VCEO
80
Vdc
Collector-Base Voltage
VCB
80
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
IC
50
Adc
Collector Current - Continuous
Base Current
IB
15
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
300
1.715
mW
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg
-65 to +200
°C
2N568xG
AYYWW
MEX
TO-204 (TO-3)
CASE 197A
STYLE 1
2N568x
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
qJC
0.584
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
PD, POWER DISSIPATION (WATTS)
300
G
A
YY
WW
MEX
ORDERING INFORMATION
Device
2N5684G
250
2N5686
200
= Device Code
x = 4 or 6
= Pb-Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
2N5686G
150
Package
Shipping
TO-3
(Pb-Free)
100 Units/Tray
TO-3
100 Units/Tray
TO-3
(Pb-Free)
100 Units/Tray
100
50
0
0
20
40
60
80 100 120 140
TEMPERATURE (°C)
160
180
200
*For additional information on our Pb-Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
© Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 12
1
Publication Order Number:
2N5684/D
2N5684 (PNP), 2N5686 (NPN)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
80
-
Vdc
ICEO
-
1.0
mAdc
-
2.0
10
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 3)
(IC = 0.2 Adc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
Collector Cutoff Current
ICEX
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
mAdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
-
2.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
-
5.0
mAdc
15
5.0
60
-
-
1.0
5.0
ON CHARACTERISTICS
DC Current Gain (Note 3)
hFE
(IC = 25 Adc, VCE = 2.0 Vdc)
(IC = 50 Adc, VCE = 5.0 Vdc)
Collector-Emitter Saturation Voltage (Note 3)
-
VCE(sat)
(IC = 25 Adc, IB = 2.5 Adc)
(IC = 50 Adc, IB = 10 Adc)
Base-Emitter Saturation Voltage (Note 2)
Base-Emitter On Voltage (Note 2)
Vdc
(IC = 25 Adc, IB = 2.5 Adc)
VBE(sat)
-
2.0
Vdc
(IC = 25 Adc, VCE = 2.0 Vdc)
VBE(on)
-
2.0
Vdc
fT
2.0
-
MHz
pF
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N5684
2N5686
Cob
-
2000
1200
(IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
15
-
Small-Signal Current Gain
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
VCC
-30 V
RL
+2.0 V
TO SCOPE
tr ≤ 20 ns
0
RB
tr ≤
20ns
1.0
0.7
0.5
-12V
DUTY CYCLE ≈ 2.0%
VCC
TO SCOPE
tr ≤ 20 ns
0
RB
tr ≤ 20ns
10 to 100 μs
-30 V
RL
+10V
-12V
t, TIME (s)
μ
10 to 100 μs
VBB
tr
0.3
0.2
td
0.1
0.07
0.05
0.03
0.02
TJ = 25°C
IC/IB = 10
VCC = 30 V
0.01
0.5 0.7 1.0
+4.0 V
2N5684 (PNP)
2N5686 (NPN)
DUTY CYCLE ≈ 2.0%
FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn-On Time
Figure 2. Switching Time Test Circuit
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2
30
50
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
2N5684 (PNP), 2N5686 (NPN)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
P(pk)
θJC(t) = r(t) θJC
θJC = 0.584°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) θJC(t)
DUTY CYCLE, D = t1/t2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
20
50
100
200
500
1000 2000
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
100
20
10
5.0
2.0
1.0
0.5
100 μs
500 μs
50
dc
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I C - V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1.0 ms
TJ = 200°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
CURVES APPLY BELOW
RATED VCEO
The data of Figure 5 is based on T J(pk) = 200_C; T C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 200_C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.2
0.1
1.0
2N5684, 2N5686
2.0 3.0
20 30
50 70 100
5.0 7.0 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active-Region Safe Operating Area
4.0
t, TIME (s)
μ
2.0
ts
5000
TJ = 25°C
IB1 = IB2
IC/IB = 10
VCE = 30 V
TJ = 25°C
3000
C, CAPACITANCE (pF)
2N5684 (PNP)
2N5686 (NPN)
3.0
1.0
0.8
0.6
0.4
tf
Cib
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
30
500
0.1
50
Figure 6. Turn-Off Time
Cob
Cib
1000
700
0.3
0.2
0.5 0.7 1.0
2000
2N5684 (PNP)
2N5686 (NPN)
0.2
Cob
0.5
1.0 2.0
5.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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3
50
100
2N5684 (PNP), 2N5686 (NPN)
PNP
2N5684
NPN
2N5686
500
500
TJ = +150°C
VCE = 2.0 V
VCE = 10 V
+25°C
100
70
+25°C
100
70
-55°C
50
30
20
10
7.0
5.0
0.5 0.7 1.0
VCE = 2.0 V
VCE = 10 V
TJ = +150°C
300
200
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
300
200
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
30
50
-55°C
30
20
10
7.0
5.0
0.5 0.7 1.0
50
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
30
50
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
2.0
2.0
TJ = 25°C
IC = 10 A
40 A
25 A
1.2
IC = 10 A
25 A
40 A
1.2
0.8
0.8
0.4
0.4
0
TJ = 25°C
1.6
1.6
0.1
0.2
0.5
1.0
2.0 3.0
IB, BASE CURRENT (AMP)
5.0
10
0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
IB, BASE CURRENT (AMP)
5.0
10
20 30
50
Figure 9. Collector Saturation Region
2.5
2.0
TJ = 25°C
TJ = 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.0
1.5
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.5
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
0
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20 30
0
0.5 0.7
50
IC, COLLECTOR CURRENT (AMP)
1.0
2.0
3.0
5.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
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4
2N5684 (PNP), 2N5686 (NPN)
PACKAGE DIMENSIONS
TO-204 (TO-3)
CASE 197A-05
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
N
C
-TE
D
U
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
K
2 PL
0.30 (0.012)
V
SEATING
PLANE
T Q
M
M
Y
M
-Y-
L
2
H
G
B
1
MILLIMETERS
MIN MAX
38.86 REF
25.15 26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
19.31 21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
-Q0.25 (0.010)
INCHES
MIN
MAX
1.530 REF
0.990 1.050
0.250 0.335
0.057 0.063
0.060 0.070
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
0.760 0.830
0.151 0.165
1.187 BSC
0.131 0.188
M
T Y
M
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2N5684/D
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