EN2007 D

Ordering number : EN2007C
2SA1419/2SC3649
Bipolar Transistor
http://onsemi.com
(–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP
Features
Adoption of FBET, MBIT processes
High breakdown voltage and large current capacity
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
•
•
•
Specifications
( ) : 2SA1419
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
Unit
VCBO
VCEO
(--)180
V
(--)160
V
(--)6
V
Collector Current
VEBO
IC
(--)1.5
A
Collector Current (Pulse)
ICP
(--)2.5
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
500
When mounted on ceramic substrate (250mm2×0.8mm)
A
mW
1.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Top View
4.5
1.0
2.5
1.5
1
2
4.0
1.6
3
0.4
2SA1419S-TD-E
2SA1419S-TD-H
2SA1419T-TD-E
2SA1419T-TD-H
2SC3649S-TD-E
2SC3649S-TD-H
2SC3649T-TD-E
2SC3649T-TD-H
Packing Type: TD
TD
Marking
3.0
RANK
RANK
2SA1419
0.75
2SC3649
Electrical Connection
2
1 : Base
2 : Collector
3 : Emitter
Bottom View
LOT No.
AE
1.5
CE
0.5
LOT No.
0.4
PCP
Semiconductor Components Industries, LLC, 2013
August, 2013
1
2
1
3
2SA1419
3
2SC3649
82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/7
2SA1419 / 2SC3649
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE1
Emitter Cutoff Current
DC Current Gain
VCE=(--)5V, IC=(--)100mA
VCE=(--)5V, IC=(--)10mA
fT
Cob
Output Capacitance
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
100*
max
Unit
(--)1
μA
(--)1
μA
400*
80
120
VCB=(--)10V, f=1MHz
IC=(--)500mA, IB=(--)50mA
V(BR)CBO
V(BR)CEO
Collector-to-Emitter Breakdown Voltage
typ
VCE=(--)10V, IC=(--)50mA
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
Ratings
min
VCB=(--)120V, IE=0A
VEB=(--)4V, IC=0A
hFE2
Gain-Bandwidth Product
Conditions
IC=(--)500mA, IB=(--)50mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
V(BR)EBO
ton
IE=(--)10μA, IC=0A
tstg
tf
See specified Test Circuit.
MHz
(22)14
pF
(--200)130
(--500)450
(--)0.85
(--)1.2
mV
V
(--)180
V
(--)160
V
(--)6
V
(40)40
ns
(0.7)1.2
μs
(40)80
ns
* : The 2SA1419 / 2SC3649 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
INPUT
RB
RL
VR
50Ω
+
100μF
+
470μF
--5V
100V
IC=10IB1=--10IB2=0.7A
(For PNP, the polarity is reversed)
Ordering Information
Package
Shipping
memo
2SA1419S-TD-E
Device
PCP
1,000pcs./reel
Pb Free
2SA1419S-TD-H
PCP
1,000pcs./reel
Pb Free and Halogen Free
2SA1419T-TD-E
PCP
1,000pcs./reel
Pb Free
2SA1419T-TD-H
PCP
1,000pcs./reel
Pb Free and Halogen Free
2SC3649S-TD-E
PCP
1,000pcs./reel
Pb Free
2SC3649S-TD-H
PCP
1,000pcs./reel
Pb Free and Halogen Free
2SC3649T-TD-E
PCP
1,000pcs./reel
Pb Free
2SC3649T-TD-H
PCP
1,000pcs./reel
Pb Free and Halogen Free
No.2007-2/7
2SA1419 / 2SC3649
IC -- VCE
--1.8
2SC3649
--1.6
1.6
--0.6
A
--80m
A
--60m
A
m
0
4
-A
--20m
A
m
--10
--5mA
--0.4
--2mA
--1.2
--1.0
--0.8
1.2
1.0
0.6
--1
--2
--3
1mA
0.2
IB=0mA
--4
0
--5
Collector-to-Emitter Voltage, VCE -- V
0
1
--2.0mA
--0.4
--1.5mA
--1.0mA
A
m
mA
2SC3649
2.5mA
2.0mA
1.5mA
0.4
1.0mA
0.2
--0.5mA
50
ITR03574
IC -- VBE
Collector Current, IC -- A
Ta=75°C
25°C
--25°C
5
Ta=
7
0.4
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
ITR03576
hFE -- IC
1000
2SC3649
VCE=5V
7
5
3
Ta=75°C
2
25°C
100
--25°C
7
5
3
3
2
2
--5 --7--0.01 --2 --3 --5 --7--0.1 --2 --3 --5 --7 --1.0 --2 --3
ITR03577
Collector Current, IC -- A
5°C
25°C
--25°C
0.8
DC Current Gain, hFE
Collector Current, IC -- A
Ta=
75°
C
25°C
--25°C
2SA1419
VCE=--5V
5
10
40
1.2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V ITR03575
7
7
30
2SC3649
VCE=5V
hFE -- IC
100
20
1.6
2SA1419
VCE=--5V
0
10
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
--0.4
2
IB=0mA
0
ITR03573
--0.8
3
0
--50
--1.2
1000
DC Current Gain, hFE
0.5mA
IB=0mA
--10
--20
--30
--40
Collector-to-Emitter Voltage, VCE -- V
0
0
0
5
ITR03572
3.0mA
0.6
--0.2
--1.6
4
4.0mA
3.5mA
4.5
0.8
Collector Current, IC -- A
Collector Current, IC -- A
2SA1419
--0.6
3
IC -- VCE
1.0
A
--5.0m
m
--4.5 A
--4.0mA
--3.5mA
--3.0mA
--2.5mA
--0.8
2
Collector-to-Emitter Voltage, VCE -- V
ITR03571
IC -- VCE
--1.0
2mA
0.4
IB=0mA
0
0
10mA
5mA
0.8
--1mA
--0.2
50mA
40mA
30mA
20mA
1.4
5.0
--1.4
Collector Current, IC -- A
Collector Current, IC -- A
IC -- VCE
1.8
2SA1419
10
7 0.01
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
7 1.0
2
3
ITR03578
No.2007-3/7
2SA1419 / 2SC3649
f T -- IC
5
Cob -- VCB
100
2SA1419 / 2SC3649
7
3
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, f T -- MHz
2SA1419 / 2SC3649
2SC3649
2
2SA1419
100
7
5
3
2
5
2SA
141
9
3
2
2SC
364
9
10
7
5
For PNP, minus sign is omitted
For PNP, minus sign is omitted
10
0.01
2
3
5
7
2
0.1
3
5
7
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
5
3
2
25°C
--100
°C
Ta=75
5
--25°C
3
7
--0.01
2
3
5
7
--0.1 2 3 5
Collector Current, IC -- A
7
7
25°C
3
5
75°C
7
2 3
5
--0.1
Collector Current, IC -- A
7
--1.0
2
DC
3
2
tio
n
For PNP, minus sign is omitted
Single pulse Ta=25°C
Mounted on a ceramic board (250mm2✕0.8mm)
2
3
5
7 10
2
--25°C
7 0.01
2
3
5
7 0.1
3
5
7 100
Collector-to-Emitter Voltage, VCE -- V
2
3
5
7 1.0
3
VBE(sat) -- IC
2SC3649
IC / IB=10
5
3
2
Ta=--25°C
1.0
7
5
25°C
7 0.01
2
3
5
7 0.1
75°C
2
3
5
7 1.0
Collector Current, IC -- A
2
3
ITR03584
PC -- Ta
M
1.4
ou
nt
1.2
ed
on
ac
er
1.0
am
ic
0.8
bo
ar
d(
25
0.6
No h
0.4
0m
m2
✕
0.8
eat s
ink
0.2
2
2
ITR03582
2SA1419 / 2SC3649
era
7 1.0
Ta=75°C
5
1.6
3
2
0.01
7
5
25°C
7
1.8
op
0.1
7
5
100
ITR03583
2SA1419 / 2SC3649
1m
10 s
m
s
10
0m
s
1.0
7
5
2
3
3
ASO
ICP=2.5A
IC=1.5A
3
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Ta=--25°C
5
5
7
--1.0
7 100
ITR03580
2SC3649
IC / IB=10
10
2
3
2
5
7
2
3
Collector Dissipation, PC -- W
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
3
5
Collector Current, IC -- A
--1.0
5
2
3
VCE(sat) -- IC
ITR03581
7
--0.01
2
10
3
2SA1419
IC / IB=10
7
7
1000
VBE(sat) -- IC
--10
3
5
2
--1000
7
3
3
2SA1419
IC / IB=10
2
2
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
3
2
3
1.0
2
1.0
ITR03579
3
ITR03585
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
m
m
)
140
160
ITR03586
No.2007-4/7
2SA1419 / 2SC3649
Bag Packing Specification
2SA1419S-TD-E, 2SA1419S-TD-H, 2SA1419T-TD-E, 2SA1419T-TD-H, 2SC3649S-TD-E, 2SC3649S-TD-H,
2SC3649T-TD-E, 2SC3649T-TD-H
No.2007-5/7
2SA1419 / 2SC3649
Outline Drawing
Land Pattern Example
2SA1419S-TD-E, 2SA1419S-TD-H, 2SA1419T-TD-E, 2SA1419T-TD-H, 2SC3649S-TD-E, 2SC3649S-TD-H,
2SC3649T-TD-E, 2SC3649T-TD-H
Mass (g) Unit
0.058 mm
Unit: mm
* For reference
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
No.2007-6/7
2SA1419 / 2SC3649
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PS No.2007-7/7
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