2SA2012 D

Ordering number : EN6306B
2SA2012
Bipolar Transistor
–30V, –5A, Low VCE(sat) PNP Single PCP
http://onsemi.com
Applicaitons
Relay drivers, lamp drivers, motor drivers, flash
•
Features
• Large current capacity
Adoption of MBIT processes
Low collector to emitter saturation voltage
Ultrasmall-sized package permitting applied sets to be made small and slim
High allowable power dissipation
•
•
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector to Base Voltage
Conditions
Ratings
Unit
VCBO
VCEO
--30
--30
V
--5
V
Collector Current
VEBO
IC
--5
A
Collector Current (Pulse)
ICP
--8
A
Collector to Emitter Voltage
Emitter to Base Voltage
V
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SA2012-TD-E
Packing Type: TD
4.5
1.6
LOT No.
AS
2.5
2
4.0
1.0
1
Marking
1.5
TD
3
0.4
0.4
0.5
1.5
3.0
Electrical Connection
2
0.75
1
3
1 : Base
2 : Collector
3 : Emitter
Bottom View
PCP
Semiconductor Components Industries, LLC, 2013
December, 2013
D0413 TKIM TC-00003071/40710EA TKIM/21400TS (KOTO) TA-2520 No.6306-1/5
2SA2012
Continued from preceding page.
Parameter
Symbol
Base Current
Conditions
Ratings
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Unit
--600
mA
When mounted on ceramic substrate (250mm2×0.8mm)
1.3
W
Tc=25°C
3.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
VCE=--2V, IC=--500mA
VCE=--10V, IC=--500mA
VCE(sat)1
Collector to Emitter Saturation Voltage
VCE(sat)2
Base to Emitter Saturation Voltage
VBE(sat)
V(BR)CBO
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Ratings
min
typ
max
VCB=--30V, IE=0A
VEB=--4V, IC=0A
fT
Cob
Output Capacitance
Conditions
200
Unit
--0.1
μA
--0.1
μA
560
350
MHz
VCB=(--)10V, f=1MHz
IC=--1.5A, IB=--30mA
30
--140
--210
mV
pF
IC=--2.5A, IB=--125mA
IC=--1.5A, IB=--30mA
--170
--260
mV
--0.83
--1.2
V
IC=--10μA, IE=0A
--30
V
V(BR)CEO
V(BR)EBO
ton
IC=--1mA, RBE=∞
IE=--10μA, IC=0A
--30
V
tstg
tf
See specified Test Circuit.
--5
V
50
ns
270
ns
25
ns
Switching Time Test Circuit
PW=20μs
D.C.≤1%
IB1
IB2
OUTPUT
INPUT
VR
50Ω
RB
+
100μF
24Ω
+
470μF
VBE=5V
VCC= --12V
IC=20IB1= --20IB2= --500mA
Ordering Information
Device
2SA2012-TD-E
Package
Shipping
memo
PCP
1,000pcs./reel
Pb Free
No.6306-2/5
2SA2012
IC -- VCE
--40mA
--3
--30mA
--20mA
--2
--10mA
--1
--4.0
--3.5
25°C
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
IB=0mA
0
0
--0.2
--0.4
--0.6
--0.8
0
--1.0
Collector to Emitter Voltage, VCE -- V
Ta=75°C
25°C
2
--25°C
100
7
5
3
2
10
--0.01
3
5 7 --0.1
2
3
5 7 --1.0
2
3
--1.4
IT00136
5
3
2
100
7
5
3
2
7
5
3
2
10
7
5
3
2
2
3
5 7 --1.0
2
3
5 7 --10
2
Collector to Base Voltage, VCB -- V
3
5
2
--100
C
75°
Ta=
°C
--25
25°C
2
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
IT00141
3
5 7 --10
IT00148
3
2
--100
7
5
°C
75
=
Ta
3
5
--2
2
°C
25°C
--10
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
Base to Emitter
Saturation Voltage, VBE(sat) -- V
2
3
5 7 --1.0
5 7 --10
IT00140
VBE(sat) -- IC
IC / IB=50
7
3
2
3
IC / IB=20
--10
5
3
2
VCE(sat) -- IC
IT00146
VCE(sat) -- IC
5
5 7 --0.1
5
7
5
--0.01
IC / IB=50
7
3
Collector Current, IC -- A
Collector to Emitter
Saturation Voltage, VCE(sat) -- mV
100
5 7 --0.1
2
7
2
Output Capacitance, Cob -- pF
--1.2
VCE=--10V
5 7--0.01
3
Collector to Emitter
Saturation Voltage, VCE(sat) -- mV
--1.0
f T -- IC
--1000
f=1MHz
--10
--0.01
--0.8
7
5 7 --10
IT00138
Cob -- VCB
5
7
--0.6
10
2
Collector Current, IC -- A
--1000
--0.4
1000
Gain-Brandwidth Product, f T -- MHz
5
3
--0.2
Base to Emitter Voltage, VBE -- V
VCE=--2V
7
DC Current Gain, hFE
0
IT00134
hFE -- IC
1000
--25°C
--90mA
VCE=--2V
--4.5
Ta=7
5°C
Collector Current, IC -- A
mA
00
--1
--4
IC -- VBE
--5.0
--80mA
--70mA
--60mA
--50mA
Collector Current, IC -- A
--5
5
3
2
Ta=--25°C
--1.0
7
75°C
5
25°C
3
2
--0.1
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
IT00144
No.6306-3/5
2SA2012
SOA
2
10 1ms
ms
Collector Dissipation, PC -- W
s
3
2
0μ
IC= --5A
50
DC
--1.0
7
5
s
0μ
Collector Current, IC -- A
ICP= --8A
10
--10
7
5
op
era
tio
n
3
2
--0.1
7
5
3
2
Tc=25°C
Single pulse
--0.01
--0.1
2
3
PC -- Ta
2.0
100ms
1.5
W
he
1.3
nm
ou
nte
do
1.0
nc
era
mi
0.5
cs
ub
str
ate
(25
0m
m2
✕0
.8m
m)
0
5
7 --1.0
2
3
5
7 --10
Collector to Emitter Voltage, VCE -- V
2
3
5
IT00150
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT00151
PC -- Tc
4.0
Collector Dissipation, PC -- W
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT01532
No.6306-4/5
2SA2012
Outline Drawing
2SA2012-TD-E
Land Pattern Example
Mass (g) Unit
0.058 mm
* For reference
Unit: mm
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
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PS No.6306-5/5
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