EN6307 D

Ordering number : EN6307C
2SA2013/2SC5566
Bipolar Transistor
http://onsemi.com
(-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCP
Applicaitons
•
Relay drivers, lamp drivers, motor drivers, flash
Features
•
•
•
•
• Large current capacity
Adoption of FBET and MBIT processes
• High-speed switching
Low collector-to-emitter saturation voltage
Ultrasmall package facilitales miniaturization in end products
High allowable power dissipation
( )2SA2013
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCES
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
VCEO
VEBO
Emitter-to-Base Voltage
Unit
(-50)100
V
(-50)100
V
(--)50
V
(--)6
V
Continued on next page.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SA2013-TD-E
2SC5566-TD-E
4.5
1.6
1
2
Packing Type: TD
4.0
1.0
2.5
1.5
TD
Marking
3
0.4
3.0
2SA2013
0.75
2SC5566
Electrical Connection
2
1 : Base
2 : Collector
3 : Emitter
Bottom View
LOT No.
AT
1.5
FC
0.5
LOT No.
0.4
PCP
Semiconductor Components Industries, LLC, 2013
September, 2013
1
2
1
3
2SA2013
3
2SC5566
72512 TKIM/62405EA MSIM TB-00001405/52501 TS KT TA-3260 No.6307-1/8
2SA2013 / 2SC5566
Continued from preceding page.
Parameter
Symbol
Collector Current
Collector Current (Pulse)
IC
ICP
Base Current
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
Ratings
Unit
(--)4
(--)7
A
A
(--)600
mA
When mounted on ceramic substrate (250mm2×0.8mm)
1.3
W
Tc=25°C
3.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
VCE=(--)2V, IC=(--)500mA
VCE(sat)2
Base-to-Emitter Saturation Voltage
VBE(sat)
V(BR)CBO
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
typ
200
VCE=(--)10V, IC=(--)500mA
VCE(sat)1
Collector-to-Emitter Saturation Voltage
Ratings
min
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
fT
Cob
Output Capacitance
Conditions
max
(--)1
μA
(--)1
μA
560
(360)400
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(--)50mA
MHz
(24)15
IC=(--)2A, IB=(--)100mA
IC=(--)2A, IB=(--)100mA
Unit
pF
(--105)85
(--180)130
mV
(--200)150
(--340)225
mV
(--)0.89
(--)1.2
V
IC=(--)10μA, IE=0A
(--50)100
V
V(BR)CES
V(BR)CEO
IC=(--)100μA, RBE=0Ω
(--50)100
V
IC=(--)1mA, RBE=∞
(--)50
V
V(BR)EBO
ton
IE=(--)10μA, IC=0A
(--)6
tstg
tf
See specified Test Circuit.
V
(30)35
ns
(230)300
ns
(15)20
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
VR10
RB
RL
25Ω
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=25V
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
Ordering Information
Package
Shipping
2SA2013-TD-E
Device
PCP
1,000pcs./reel
2SC5566-TD-E
PCP
1,000pcs./reel
memo
Pb Free
No.6307-2/8
2SA2013 / 2SC5566
IC -- VCE
0mA
--80mA
--70mA
--60mA
--50mA
--20mA
--2
--10mA
--1
IB=0mA
0
0
--0.4
--0.8
--1.2
--1.6
Collector-to-Emitter Voltage, VCE -- V
--1.5
--1.0
--0.5
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
100
7
5
2.5
2.0
1.5
1.0
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
3
2
--100
7
5
5°C
7
Ta=
3
2
5°C
2
--25°C
--10
7
5
3
2
--1.0
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
IT00158
1.0
1.2
1.4
IT00155
Ta=75°C
--25°C
25°C
100
7
5
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
VCE(sat) -- IC
2SA2013
IC / IB=20
0.8
2SC5566
VCE=2V
2
10
0.01
5 7 --10
IT00156
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
--1000
7
5
0.6
3
2
5 7 --0.1
0.4
hFE -- IC
5
3
3
0.2
7
2
2
0
Base-to-Emitter Voltage, VBE -- V
3
10
--0.01
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3.0
0
--1.4
Ta=75°C
25°C
--25°C
2.0
IT00153
2SC5566
VCE=2V
IT00154
DC Current Gain, hFE
DC Current Gain, hFE
5
1.6
IC -- VBE
1000
7
1.2
3.5
2SA2013
VCE= --2V
2
0.8
4.0
hFE -- IC
3
0.4
0.5
Base-to-Emitter Voltage, VBE -- V
1000
IB=0mA
2SC5566
Collector-to-Emitter Voltage, VCE -- V
0
0
20mA
0
Collector Current, IC -- A
--2.0
Ta=7
5°C
25°C
--25°
C
Collector Current, IC -- A
--2.5
30mA
10mA
IT00152
--3.0
40mA
1
0
2SA2013
VCE= --2V
--3.5
2
--2.0
IC -- VBE
--4.0
3
6
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- A
A
--40m
A
--30m
50mA
0mA
100mA
--10
--90mA
--3
IC -- VCE
4
70
80
90mA mA mA
2SA2013
Collector Current, IC -- A
--4
5 7 10
IT00157
VCE(sat) -- IC
1000
7
5
2SC5566
IC / IB=20
3
2
100
7
5
5°C
7
Ta=
3
2
--25°C
10
7
5
C
25°
3
2
1.0
0.01
2
3
5 7 0.1
2
3
5 7 1.0
Collector Current, IC -- A
2
3
5 7 10
IT00160
No.6307-3/8
2SA2013 / 2SC5566
VCE(sat) -- IC
3
2
--2
5
--1000
Ta
=
7
5
3
2
--100
°C
5
Ta=7
7
5
--25°C
3
2
--10
--0.01
2
3
5 7 --0.1
25°
C
2
3
5 7 --1.0
2
3
5
3
2
Ta= --25°C
7
25°C
3
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
100
7
5
5°C
Ta=7
C
--25°
3
2
3
5 7 0.1
2
C
5°
--2
°C
25
3
5 7 1.0
2
3
5 7 10
IT00161
VBE(sat) -- IC
2SC5566
IC / IB=50
7
5
3
2
1.0
Ta= --25°C
7
75°C
5
25°C
3
0.1
0.01
5 7 --10
IT00162
Collector Current, IC -- A
2
3
5 7 0.1
2SA2013
f=1MHz
100
7
5
3
2
10
7
5
5 7 1.0
2
3
5 7 10
IT00163
2SC5566
f=1MHz
3
Output Capacitance, Cob -- pF
2
3
Cob -- VCB
5
3
2
Collector Current, IC -- A
Cob -- VCB
5
Output Capacitance, Cob -- pF
3
2
2
--0.1
--0.01
2
100
7
5
3
2
10
7
5
3
2
3
2
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
2 3
Collector-to-Base Voltage, VCB -- V
5 7 --100
5 7 0.1
3
2
100
7
5
3
2
10
5 7 1.0
2
3
5 7 10
2
3
5 7 100
IT00165
f T -- IC
2SC5566
VCE=10V
7
Gain-Bandwidth Product, f T -- MHz
5
3
1000
2SA2013
VCE= --10V
7
2
Collector-to-Base Voltage, VCB -- V
IT00164
f T -- IC
1000
Gain-Bandwidth Product, f T -- MHz
°C 25°C
75
=
Ta
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
7
75°C
1000
7
5
10
2SA2013
IC / IB=50
5
3
2
10
0.01
5 7 --10
IT00159
VBE(sat) -- IC
--1.0
2SC5566
IC / IB=50
7
5
2
Collector Current, IC -- A
--10
VCE(sat) -- IC
10000
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2SA2013
IC / IB=50
25°C
°C
75
°C
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
--10000
7
5
5
3
2
100
7
5
3
2
10
5 7 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
IT00166
5
0.01
2
3
5 7 0.1
2
3
5 7 1.0
Collector Current, IC -- A
2
3
5 7 10
IT00167
No.6307-4/8
2SA2013 / 2SC5566
2.0
ICP=7A
0.1
7
5
Collector Dissipation, PC -- W
3
2
0μ
s
s
DC
1.0
7
5
50
0μ
10 1ms
ms
IC=4A
3
2
op
era
tio
n
2SA2013 / 2SC5566
Tc=25°C
Single pulse
For PNP, the minus sign is omitted.
3
2
0.01
0.1
2
3
2SA2013 / 2SC5566
100ms
10
10
7
5
Collector Current, IC -- A
PC -- Ta
ASO
2
5 7 1.0
2
3
1.5
1.3
M
ou
nte
do
na
1.0
ce
ram
ic
bo
ard
(25
0m
0.5
m2
✕0
.8m
m)
0
5 7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
5 7 100
IT00168
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT00169
PC -- Tc
4.0
2SA2013 / 2SC5566
Collector Dissipation, PC -- W
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT01533
No.6307-5/8
2SA2013 / 2SC5566
Bag Packing Specification
2SA2013-TD-E, 2SC5566-TD-E
No.6307-6/8
2SA2013 / 2SC5566
Outline Drawing
2SA2013-TD-E, 2SC5566-TD-E
Land Pattern Example
Mass (g) Unit
0.058 mm
* For reference
Unit: mm
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
No.6307-7/8
2SA2013 / 2SC5566
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