2SB1302 D

Ordering number : EN2555C
2SB1302
Bipolar Transisitor
–20V, –5A, Low VCE(sat) PNP Single PCP
http://onsemi.com
Applicaitons
DC-DC converters, motor drivers, relay drivers, lamp drivers
•
Features
• Low collector to emitter saturation voltage
Adoption of FBET, MBIT processes
• Fast switching speed
Large current capacity
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
•
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector to Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector to Emitter Voltage
Emitter to Base Voltage
Unit
--25
V
--20
V
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
--5
V
--5
A
--8
A
Continued on next page.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
4.5
1.6
TD
1
2
Marking
BJ
Packing Type: TD
4.0
1.0
2.5
1.5
2SB1302S-TD-E
2SB1302T-TD-E
LOT No.
Top View
RANK
3
0.4
0.4
0.5
1.5
3.0
Electrical Connection
2
0.75
1
1 : Base
2 : Collector
3 : Emitter
Bottom View
3
PCP
Semiconductor Components Industries, LLC, 2013
November, 2013
N2013 TKIM TC-00003058/31710EA TKIM/10904TN (KT)/O1598HA (KT)/D2680MO/4097TA, TS No.2555-1/5
2SB1302
Continued from preceding page.
Parameter
Symbol
Collector Dissipation
Conditions
Ratings
When mounted on ceramic substrate (250mm2×0.8mm)
Junction Temperature
PC
Tj
Storage Temperature
Tstg
Unit
1.3
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Conditions
Ratings
min
typ
ICBO
IEBO
hFE1
VCE=--2V, IC=--500mA
140*
hFE2
fT
VCE=--2V, IC=--4A
VCE=--5V, IC=--200mA
60
Gain-Bandwidth Product
Output Capacitance
Cob
Collector to Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=--10V, f=1MHz
IC=--3A, IB=--60mA
Emitter Cutoff Current
DC Current Gain
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
max
Unit
VCB=--20V, IE=0A
--500
nA
VEB=--4V, IC=0A
--500
nA
400*
320
MHz
60
pF
--250
--500
--1.0
--1.3
mV
IC=--3A, IB=--60mA
IC=--10μA, IE=0A
--25
V
V
IC=--1mA, RBE=∞
--20
V(BR)EBO
ton
IE=--10μA, IC=0A
--5
tstg
tf
See specified Test Circuit.
V
V
40
ns
200
ns
10
ns
* : 2SB1302 is classified by 500mA hFE as follows :
Rank
S
T
hFE
140 to 280
200 to 400
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
OUTPUT
IB2
INPUT
VR
50Ω
RB
RL
+
+
100μF
470μF
VBE=5V
VCC= --10V
IC=10IB1= --10IB2= --2A
Ordering Information
Package
Shipping
2SB1302S-TD-E
Device
PCP
1,000pcs./reel
2SB1302T-TD-E
PCP
1,000pcs./reel
memo
Pb Free
No.2555-2/5
2SB1302
IC -- VCE
From top
--100mA
--90mA
--80mA
--70mA
--60mA
--4
--3
A
--50m
--40mA
A
--35mA
--30mA
m
--40
--30mA
--20mA
--2
--10mA
--1
--4
--25mA
--20mA
--3
--15mA
--2
--10mA
--5mA
--1
IB=0mA
0
0
--0.2
--0.4
--0.6
--0.8
Collector to Emitter Voltage, VCE -- V
IB=0mA
0
0
--1.0
--1
--2
--3
--4
--5
Collector to Emitter Voltage, VCE -- V
ITR09567
IC -- VBE
--6
VCE= --2V
7
--5
ITR09568
hFE -- IC
1000
VCE= --2V
5
--3
--2
--25°C
Ta=75
°
C
--4
DC Current Gain, hFE
25°C
Collector Current, IC -- A
IC -- VCE
--5
Collector Current, IC -- A
Collector Current, IC -- A
--5
Ta=75°C
3
25°C
--25°C
2
100
7
5
--1
3
0
0
2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base to Emitter Voltage, VBE -- V
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
7
5 7 --10
ITR09570
Cob -- VCB
3
VCE= --5V
f=1MHz
2
Output Capacitance, Cob -- pF
Gain-Brandwidth Product, f T -- MHz
7 --0.01
f T -- IC
1000
5
3
2
100
7
100
7
5
3
2
5
3
7--0.01
10
2 3
5 7 --0.1
2
3
5
7 --1.0
2
3
Collector Current, IC -- A
5
5
7 --1.0
2
3
5
7 --10
Collector to Base Voltage, VCB -- V
ITR09571
2
3
ITR09572
VBE(sat) -- IC
--10
IC / IB=50
7
IC / IB=50
Base to Emitter
Saturation Voltage, VBE(sat) -- V
7
5
3
2
--100
7
5
3
3
7 --10
VCE(sat) -- IC
--1000
Collector to Emitter
Saturation Voltage, VCE(sat) -- mV
--1.4
ITR09569
Ta= --25°C
25°C
2
75°C
5
3
2
--1.0
Ta= --25°C
7
25°C
5
75°C
3
--10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
ITR09573
7 --0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
ITR09574
No.2555-3/5
2SB1302
SOA
2
ICP= --8A
--10
1.4
Collector Dissipation, PC -- W
IC= --5A
3
s
1m
ms
10 ms
0
10
Collector Current, IC -- A
7
5
2
DC
--1.0
7
op
era
tio
5
n
3
2
Ta=25°C
Single pulse
When mounted on ceramic substrate (250mm2✕0.8mm)
--0.1
7
5
2
3
5
PC -- Ta
1.8
7 --1.0
2
3
5
7
--10
Collector to Emitter Voltage, VCE -- V
W
he
nm
1.2
ou
nt
1.0
ed
on
ce
ra
m
0.8
ic
su
bs
tra
0.6
te
(2
50
m
0.4
0.2
m2
✕0
.8
m
m
)
2
3
ITR09575
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR09576
No.2555-4/5
2SB1302
Outline Drawing
2SB1302S-TD-E, 2SB1302T-TD-E
Land Pattern Example
Mass (g) Unit
0.058 mm
* For reference
Unit: mm
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
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PS No.2555-5/5
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