ENA0188 D

Ordering number : ENA0188B
2SB817C
Bipolar Transistor
–140V, –12A, Low VCE(sat) PNP TO-3P-3L
http://onsemi.com
Features
•
•
•
Large current capacitance
Wide SOA and high durability against breakdown
Adoption of MBIT process
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector to Base Voltage
Conditions
Ratings
Unit
VCBO
VCEO
-160
V
-140
V
--6
V
Collector Current
VEBO
IC
--12
A
Collector Current (Pulse)
ICP
--20
A
2.5
W
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
120
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7539-001
• Package
: TO-3P-3L
• JEITA, JEDEC
: SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./tube
2SB817C-1E
4.8
15.6
5.0
1.5
Marking
7.0
3.2
Electrical Connection
1.0
2
5.45
LOT No.
1
0.6
3
1.4
1
B817C
3
20.0
2.0
3.0
16.76
10.0
13.6
3.5
18.4
19.9
2
1 : Base
2 : Collector
3 : Emitter
5.45
TO-3P-3L
Semiconductor Components Industries, LLC, 2013
January, 2014
12214 TKIM TC-00003086/N0508 MSIM TC-00001683/13106DA MSIM TB-00001810 No.A0188-1/4
2SB817C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base to Emitter Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
min
typ
ICBO
IEBO
hFE1
VCB=--160V, IE=0A
VEB=--4V, IC=0A
VCE=--5V, IC=--1A
100
hFE2
VCE=--5V, IC=--5A
35
fT
Cob
VCE=--5V, IC=--1A
VBE
VCE(sat)
Collector to Emitter Saturation Voltage
Ratings
Conditions
max
Unit
--0.1
mA
--0.1
mA
200
10
VCB=--10V, f=1MHz
VCE=--5V, IC=--5A
280
IC=--5A, IB=--0.5A
--0.3
MHz
pF
--1.5
V
--2.0
V
V(BR)CBO
V(BR)CEO
IC=--5mA, IE=0A
--160
V
IC=--50mA, RBE=∞
--140
V
V(BR)EBO
ton
IE=--5mA, IC=0A
tstg
tf
See specified Test Circuit.
--6
V
0.45
μs
1.75
μs
0.25
μs
Switching Time Test Circuit
IB1
PW=20Ms
D.C.¾b1%
INPUT
OUTPUT
IB2
VR
RB
507
+
RL=
107
+
100MF
470MF
VBE=5V
VCC= --50V
IC= --10IB1=10IB2= --5A
Ordering Information
Device
2SB817C-1E
Package
Shipping
memo
TO-3P-3L
30pcs./tube
Pb-Free
IC -- VCE
--16
--14
VCE= --5V
--7
--400mA
--10
--300mA
--8
--200mA
--6
--100mA
--4
--40mA
--20mA
--2
IB=0mA
0
0
--1
--2
--3
--4
--5
--6
--7
--8
Collector to Emitter Voltage, VCE -- V
--9
--10
IT03410
--6
--5
12
0°
25° C
C
--40
°C
--12
--4
Ta
=
--500mA
Collector Current, IC -- A
Collector Current, IC -- A
IC -- VBE
--8
--3
--2
--1
0
0
--0.5
--1.0
Base to Emitter Voltage, VBE -- V
--1.5
IT03412
No.A0188-2/4
2SB817C
hFE -- IC
3
IC / IB=10
Collector to Emitter
Saturation Voltage, VCE(sat) -- V
Ta=120oC
2
DC Current Gain, hFE
25oC
--40oC
100
VCE(sat) -- IC
2
VCE= --5V
7
5
3
2
--1.0
7
5
3
2
--0.1
C
20o
0oC
--4
7
1
Ta=
5
3
C
25o
2
10
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT03414
Collector Current, IC -- A
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT03416
PC -- Ta
ICP=--20A
P
C =1
10m
20
s
Collector Dissipation, PC -- W
1m
IC=--12A
3
2
s
W
10
0m
s
op
--1.0
7
5
era
tio
3
2
n
--0.1
7
5
3
2
3
3.0
DC
Collector Current, IC -- A
--10
7
5
2
Collector Current, IC -- A
SOA
5
3
2
--0.01
--0.01
Single pulse
Tc=25oC
--0.01
1.0
2
2.5
2.0
No
he
at
1.5
sin
k
1.0
0.5
0
3
5
7
10
2
3
5
7 100
2
Collector to Emitter Voltage, VCE -- V
3
IT17372
0
20
40
60
80
100
120
Ambient Temperature, Ta -- oC
140
160
IT03419
PC -- Tc
140
Collector Dissipation, PC -- W
120
100
80
60
40
20
0
0
20
40
60
80
100
120
Case Temperature, Tc -- oC
140
160
IT10416
No.A0188-3/4
2SB817C
Outline Drawing
2SB817C-1E
Mass (g) Unit
1.8
mm
* For reference
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PS No.A0188-4/4
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