INTERSIL EL6202

EL6202
®
Data Sheet
June 11, 2004
FN7217.1
Laser Driver Oscillator
Features
The EL6202 consists of a variable
amplitude, push only, oscillator that
also supplies the laser DC current. It is
designed to easily interface to existing ROM controllers,
reducing parts count, and power dissipation.
• Low power dissipation
The reduction of parts count and the small package allows
the oscillator to be placed closer to the laser, thus reducing
EMI. Also, the turn-on and turn-off edges are slew rate
limited to reduce higher harmonics.
• User-selectable amplitude from 15mAPK-PK to
100mAPK-PK controlled by 0.3mA to 2mA input current
The total current drawn from the power supply can be less
than the laser threshold current due to the unique push-only
modulation method. The average current is less than the
peak oscillator current, and can be less than half of the
oscillator current. The power control current supplied from
the main board is reduced to less than 2mA.
One external resistor sets the oscillator frequency. A current
applied to the IIN terminal determines the amplitude of the
oscillator and laser DC current. If the oscillator amplitude is
set very low, the output and oscillator are disabled. The part
is available in the space-saving SOT23-5 package. It is
specified for operation from 0°C to +70°C.
Pinout
VDD
2
GND
3
IOUT
1
• User-selectable frequency from 60MHz to 600MHz
controlled with a single resistor
• Auto turn-off threshold
• Soft edges for reduced EMI
• Small SOT23-5 package
Applications
• DVD players
• DVD-ROM drives
• Combo drives
• MO drives
• General purpose laser noise reduction
• Local oscillator capability
Ordering Information
EL6202
(5-PIN SOT-23)
TOP VIEW
1
• Reduced parts count from the conventional solution
PART NUMBER
RFREQ
5
IIN
4
PACKAGE
TAPE & REEL PKG. DWG. #
EL6202CW-T7
5-Pin SOT-23
7” (3K pcs)
MDP0038
EL6202CW-T7A
5-Pin SOT-23
7” (250 pcs)
MDP0038
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright © Intersil Americas Inc. 2003-2004. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc.
All other trademarks mentioned are the property of their respective owners.
EL6202
Absolute Maximum Ratings (TA = 25°C)
Voltages Applied to:
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +6.0V
IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +6.0V
RFREQ, IIN . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +6.0V
Operating Ambient Temperature . . . . . . . . . . . . . . . . . 0°C to +70°C
Maximum Die Operating Temperature . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mAPK-PK
Power Dissipation (max) . . . . . . . . . . . . . . . . . . . . . . . . See Curves
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Supply & Reference Voltage Characteristics VDD = +5V, TA = 25°C, RL = 10Ω, RFREQ = 5210Ω (FOSC = 350MHz), IIN = 1mA
(IOUT = 50mAP-P measured at 60MHz), VOUT = 2.2V
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
5.5
V
550
750
µA
30
35
mA
PSOR
Power Supply Operating Range
4.5
ISO
Supply Current Disabled
ISTYP
Supply Current Typical Conditions RFREQ = 5.21kΩ (includes laser current)
ISLO
Supply Current Low Conditions
RFREQ = 30.5kΩ, IIN = 300µA (includes laser
current)
10
mA
ISHI
Supply Current High Conditions
RFREQ = 3.05kΩ, IIN = 2mA (includes laser current)
53
mA
VFREQ
Voltage at RFREQ Pin
1.27
V
RIN
Input Impedance
500
Ω
IIN ≤ 100µA
25
Oscillator Characteristics VDD = +5V, TA = 25°C, RL = 10Ω, RFREQ = 5210Ω (FOSC = 350MHz), IIN = 1mA (IOUT = 50mAP-P measured
at 60MHz), VOUT = 2.2V
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
300
350
400
MHz
FOSC
Frequency Tolerance
Unit-unit frequency variation
FHIGH
Frequency Range High
RFREQ = 3.05kΩ
600
MHz
FLOW
Frequency Range Low
RFREQ = 30.5kΩ
60
MHz
TCOSC
Frequency Temperature Sensitivity
0°C to 70°C ambient
50
ppm/°C
PSRROSC
Frequency Change ∆F/F
VDD from 4.5V to 5.5V
1
%
Driver Characteristics
VDD = +5V, TA = 25°C, RL = 10Ω, RFREQ = 30.5kΩ (FOSC = 60MHz), IIN = 1mA (IOUT = 50mAP-P measured at
60MHz), VOUT = 2.2V
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
AMPHIGH
Amplitude Range High
IIN = 2mA
100
mAP-P
AMPLOW
Amplitude Range Low
IIN = 300µA
15
mAP-P
IAVG
Average Output Current @ 2.2V
RFREQ = 5210Ω
19
mA
IOUTP-P
Output Current Tolerance
Defined as one standard deviation
2
%
Duty Cycle
Output Push Time/Cycle Time
RFREQ = 5210Ω
43
%
PSRRAMP
Amplitude Change of Output ∆I/I
VDD from 4.5V to 5.5V
-54
dB
TON
Auto Turn-on Time
Input current step from 0mA to 1mA
15
µs
TOFF
Auto Turn-off Time
Input current step from 1mA to 0mA
0.5
µs
INOUT
IOUT Current Output Noise Density
RFREQ = 5490Ω, FMEASURE = 10MHz
2.5
nA/√Hz
2
EL6202
Control Table
IIN
IOUT
≤ 100µA
OFF
≥ 300µA
Normal Operation
Pin Descriptions
PIN NUMBER
PIN NAME
PIN DESCRIPTION
1
VDD
Positive power for chip and laser driver (3.3V - 5V)
2
GND
Chip ground pin (0V)
3
IOUT
Current output to laser anode
4
IIN
5
RFREQ
Set pin for output current amplitude
Set pin for oscillator frequency
Recommended Operating Conditions
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
VOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V-3V
RFREQ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3kΩ (min)
3
IIN. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mA (max)
FOSC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60-600MHz
IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15-100mAPK-PK
EL6202
Typical Performance Curves
VDD = 5V, TA = 25°C, RL = 10Ω, RFREQ = 5.21kΩ, IIN = 1mA, VOUT = 2.2V unless otherwise specified.
500
8
Typical
Production
Distortion
400
Measured from
-40°C to +85°C
7
NUMBER OF PARTS
NUMBER OF PARTS
6
300
200
5
4
3
2
100
1
FREQUENCY (MHz)
90
78
66
54
FREQUENCY TC (ppm/°C)
FIGURE 1. FREQUENCY DISTRIBUTION
FIGURE 2. FREQUENCY DRIFT WITH TEMPERATURE
700
700
Frequency=1824 * 1kΩ / RFREQ (MHz)
Frequency=1824 * 1kΩ / RFREQ (MHz)
600
600
500
500
FREQUENCY (MHz)
FREQUENCY (MHz)
42
30
18
6
390
382
374
366
358
350
342
334
326
318
0
310
0
400
300
200
100
400
300
200
100
0
0
0
5
10
15
20
25
30
35
0
0.05
0.1
0.15
RFREQ (kΩ)
0.2
0.25
0.3
0.35
1kΩ / RFREQ
FIGURE 4. FREQUENCY vs 1/RFREQ
FIGURE 3. FREQUENCY vs RFREQ
100
360
Amplitude = 50 * IIN
355
FREQUENCY (MHz)
AMPLITUDE (mAPK-PK)
80
60
40
350
345
20
0
0
1
IIN (mA)
FIGURE 5. AMPLITUDE vs IIN
4
2
340
4.4
4.6
4.8
5
5.2
5.4
SUPPLY VOLTAGE (V)
FIGURE 6. FREQUENCY vs SUPPLY VOLTAGE
5.6
EL6202
Typical Performance Curves
VDD = 5V, TA = 25°C, RL = 10Ω, RFREQ = 5.21kΩ, IIN = 1mA, VOUT = 2.2V unless otherwise specified.
400
FREQUENCY (MHz)
380
360
340
320
300
-50
0
50
100
150
AMBIENT TEMPERATURE (°C)
FIGURE 7. FREQUENCY vs TEMPERATURE
Block Diagram
VDD
1
GND
2
IOUT
3
5
DRIVER
OSCILLATOR
6
RFREQ
BANDGAP
REFERENCE
AUTO
SHUT-OFF
4
IN
EL6202
Typical Application Circuit
TYPICAL
ROM LASER
DRIVER
EMI
REDUCTION
SUPPLY
FILTER
GAIN
SETTING
RESISTOR
+5V
FREQUENCY
SETTING
RESISTOR
BEAD
0.1µF
DAC
FLEX
4.7µF
1
VDD1
2
GND
3
IOUT
RFREQ
5
IIN
4
CONTROLLER
GND
LASER DIODE
PHOTO DIODE
LOOP
COMPENSATIONNOISE
REDUCTION
CAPACITOR
optional
Either the high current controller resistor can be
reduced to 2mA full scale, or the transistor and resistor
can be replaced with a resistor from the controller DAC.
~10mW
EMI
BLOCKING
RESISTOR
LASER OUTPUT
POWER
LASER OUTPUT POWER
THRESHOLD
CURRENT
0mW
0mA
~60mA
LASER CURRENT
OSCILLATOR CURRENT
Applications Information
Product Description
The EL6202 is a solid state, low-power, high-speed laser
modulation oscillator with external resistor-adjustable
operating frequency. It is designed to interface easily to laser
diodes to break up optical feedback resonant modes and
thereby reduce laser noise. The output of the EL6202 is
composed of a push current source switched at the oscillator
6
frequency. The output and oscillator are automatically
disabled for power saving when the average input current
drops to less than 100µA. The EL6202 has the operating
frequency from 60MHz to 600MHz and the output current
from 10mAP-P to 100mAP-P. The supply current is only
30mA (includes laser current) for the output current of
50mAP-P at the operating frequency of 350MHz.
EL6202
Theory of Operation
A typical semiconductor laser will emit a small amount of
incoherent light at low values of forward laser current. But
after the threshold current is reached, the laser will emit
coherent light. Further increases in the forward current will
cause rapid increases in laser output power. A typical
threshold current is 35mA and a typical slope efficiency is
0.7mW/mA.
When the laser is lasing, it will often change its mode of
operation slightly, due to changes in current, temperature, or
optical feedback into the laser. In a DVD-ROM, the optical
feedback from the moving disk forms a significant noise
factor due to feedback-induced mode hopping. In addition to
the mode hopping noise, a diode laser will roughly have a
constant noise level regardless of the power level when a
threshold current is exceeded.
The oscillator is designed to produce a low noise oscillating
current that is provided to the laser diode. The current is to
cause the laser power to change at the oscillator frequency.
This change causes the laser to go through rapid mode
hopping. The low frequency component of laser power noise
due to mode hopping is translated up to sidebands around
the oscillator frequency by this action. Since the oscillator
frequency can be filtered out of the low frequency read and
serve channels, the net result is that the laser noise seems
to be reduced. The second source of laser noise reduction is
caused by the increase in the laser power above the average
laser power during the pushing-current time. The signal-tonoise ratio (SNR) of the output power is better at higher laser
powers because of the almost constant noise power when a
threshold current is exceeded. In addition, when the laser is
off during no output current time, the noise is also very low.
Trimmer resistors can be used to adjust initial operating
points.
+
VREF
-
PIN
FIGURE 8. RFREQ PIN INTERFACE
External voltage sources can be coupled to the RFREQ pin
to effect frequency modulation or adjustment. It is
recommended that a coupling resistor be installed in series
with the control voltage and mounted directly next to the pin.
This will keep the inevitable high-frequency noise of the
EL6202's local environment from propagating to the
modulation source, and it will keep parasitic capacitance at
the pin minimized.
Supply Bypassing and Grounding
The resistance of bypass-capacitors and the inductance of
bonding wires prevent perfect bypass action, and 150mVP-P
noise on the power lines is common. There needs to be a
lossy series bead inductance and secondary bypass on the
supply side to control signals from propagating down the
wires. Figure 9 shows the typical connection.
L Series: 70Ω reactance at
300MHz (see text)
VS
EL6202
+5V
0.1µF
Chip
0.1µF
Chip
GND
Setting the IIN Current
By looking the typical application circuit, it can be seen that
the push only oscillator is more efficient at the laser than the
conventional push-pull oscillator. The significant current from
the main board is reduced to be IIN (≤2mA), while the
oscillator takes on the role of supplying the total laser
current.
The IIN current is the previous read current (reduced in
amplitude). Thus it does not need to be set, since it is within
the control loop. The current capability of the external source
for IIN should be made large enough to power the worst,
hottest old laser.
FIGURE 9. RECOMMENDED SUPPLY BYPASSING
Also important is circuit-board layout. At the EL6202's
operating frequencies, even the ground plane is not lowimpedance. High frequency current will create voltage drops
in the ground plane. Figure 10 shows the output current loop.
RFREQ
RAMP
SUPPLY
BYPASS
SOURCING CURRENT LOOP
RFREQ Pin Interfacing
LOAD
Figure 8 shows an equivalent circuit of pins associated with
the RFREQ resistor. VREF is roughly 1.27V. The resistor
RFREQ should be connected to the non-load side of the
power ground to avoid noise. This resistor should also return
to the EL6202’s ground very directly to prevent noise pickup.
They also should have minimal capacitance to ground.
7
GND
(8-PIN
PACKAGE)
FIGURE 10. OUTPUT CURRENT LOOP
EL6202
power dissipation can be found graphically, based on the
ambient temperature and JEDEC standard single layer PCB.
For flex circuits, the θJA could be higher. By using the
previous equation, it is possible to estimate if PD exceeds
the device's power derating curve. To ensure proper
operation, it is important to observe the recommended
derating curve shown in Figure 12.
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.6
0.5
POWER DISSIPATION (W)
For the current loop, the current flows through the supply
bypass-capacitor. The ground end of the bypass thus should
be connected directly to the EL6202 ground pin and laser
ground. A long ground return path will cause the bypass
capacitor currents to generate voltage drops in the ground
plane of the circuit board, and other components (such as
RFREQ) will pick this up as an interfering signal. Similarly,
the ground return of the load should be considered, as noisy
and other grounded components should not connect to this
path. Slotting the ground plane around the load's return will
reduce adjacent grounded components from seeing the
noise.
Power Dissipation
It is important to calculate the maximum junction
temperature for the application to determine if the conditions
need to be modified for the oscillator to remain in the safe
operating area.
488mW
5-
0.4
θ
JA
=
Pi
n
25
6
0.3
SO
T-2
°C
/W
3
0.2
The maximum power dissipation allowed in a package is
determined according to:
0.1
0
T JMAX - T AMAX
P DMAX = -------------------------------------------Θ JA
0
25
50
75 85
100
125
150
AMBIENT TEMPERATURE (°C)
FIGURE 11. PACKAGE POWER DISSIPATION vs
AMBIENT TEMPERATURE
where:
PDMAX = Maximum power dissipation in the package
TJMAX = Maximum junction temperature
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
θJA = Thermal resistance of the package
0.5
The supply current of the EL6202 depends on the peak-topeak output current and the operating frequency which is
determined by resistor RFREQ. The supply current can be
predicted approximately by the following equations:
× 1kΩ- + 0.5mA
--------------------------------I SUP1 = 35mA
R FREQ
POWER DISSIPATION (W)
TAMAX = Maximum ambient temperature
0.6
543mW
θ
5Pi
n
SO
T23
23
0°
C/
W
JA
=
0.4
0.3
0.2
0.1
I SUP2 = 50 × I IN × 0.5
0
The power dissipation can be calculated from the following
equation:
P D = V SUP × I SUP1 + ( V SUP - V LAS ) × I SUP2
0
25
50
75 85
100
125
150
AMBIENT TEMPERATURE (°C)
FIGURE 12. PACKAGE POWER DISSIPATION vs
AMBIENT TEMPERATURE
Here, VSUP is the supply voltage and VLAS is the average
voltage of the laser diode. Figure 11 provides a convenient
way to see if the device may overheat. The maximum safe
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