2SC5658M3 D

2SC5658M3T5G,
2SC5658RM3T5G
NPN Silicon General
Purpose Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
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NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
Features
•
•
•
•
•
•
•
Reduces Board Space
High hFE, 210 −460 (typical)
Low VCE(sat), < 0.5 V
ESD Performance: Human Body Model; u 2000 V,
Machine Model; u 200 V
Available in 8 mm, 7−inch/3000 Unit Tape and Reel
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
50
Vdc
Collector-Emitter Voltage
V(BR)CEO
50
Vdc
Emitter-Base Voltage
V(BR)EBO
7.0
Vdc
IC
150
mAdc
Symbol
Max
Unit
Power Dissipation (Note 1)
PD
260
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
−55 ~ + 150
°C
Collector Current − Continuous
3
2
SOT−723
CASE 631AA
XXM
1
THERMAL CHARACTERISTICS
Rating
MARKING
DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
XX
(B9
RM
M
= Specific Device Code
= 2SC5658M3T5G
= 2SC5658RM3T5G)
= Date Code
ORDERING INFORMATION
Package
Shipping†
2SC5658M3T5G
SOT−723
(Pb−Free)
8000 / Tape &
Reel
2SC5658RM3T5G
SOT−723
(Pb−Free)
8000 / Tape &
Reel
NSV2SC5658M3T5G
SOT−723
(Pb−Free)
8000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 5
1
Publication Order Number:
2SC5658M3/D
2SC5658M3T5G, 2SC5658RM3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
−
−
Vdc
Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0)
V(BR)EBO
7.0
−
−
Vdc
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)
ICBO
−
−
0.5
mA
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)
IEBO
−
−
0.5
mA
−
−
0.4
120
215
−
−
560
375
fT
−
180
−
MHz
COB
−
2.0
−
pF
Collector-Emitter Saturation Voltage (Note 2)
(IC = 50 mAdc, IB = 5.0 mAdc)
DC Current Gain (Note 2)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
VCE(sat)
hFE
2SC5658M3T5G
2SC5658RM3T5G
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz)
Vdc
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Include NSV−prefix devices where applicable.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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2
2SC5658M3T5G, 2SC5658RM3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
1
50
140 mA
40
120 mA
100 mA
30
80 mA
60 mA
20
40 mA
10
IB = 20 mA
2
4
6
8
100
1000
hFE, DC CURRENT GAIN
0.8
TA = 25°C
0.6
TA = 150°C
VCE = 6 V
TA = 150°C
TA = 25°C
TA = −55°C
100
0.3
1
10
100
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
30 mA
Figure 4. DC Current Gain vs. Collector
Current
2.0
1.8
50 mA
1.4
30 mA
1.2
1.0
0.8
0.6
IC = 100 mA
10 mA
0.2
0
0.01
0.1
1
1
TA = 25°C
1.6
0.4
1000
VBE(ON), BASE−EMITTER ON
VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
10
1000
TA = −55°C
0.2
0.1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1
IC, COLLECTOR CURRENT (mA)
1
0.4
TA = −55°C
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
0.9
0.5
TA = 150°C
Figure 1. IC − VCE
IC/IB = 10
0.7
TA = 25°C
VCE, COLLECTOR VOLTAGE (V)
1.2
1.1
0.1
0.01
0.1
0
0
IC/IB = 10
160 mA
TA = 25°C
VCE, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
60
10
100
VCE = 2 V
0.9
TA = −55°C
0.8
0.7
TA = 25°C
0.6
0.5
0.4
TA = 150°C
0.3
0.2
0.1
1
10
100
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Saturation Region
Figure 6. Base−Emitter Turn−ON Voltage vs.
Collector Current
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3
1000
1000
2SC5658M3T5G, 2SC5658RM3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
ftau, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
1000
Cibo
10
Cobo
1
0.1
1
10
VCE = −2 V
TA = 25°C
100
10
0.1
100
1
10
100
1000
VR, REVERSE VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitance
Figure 8. Current Gain Bandwidth Product vs.
Collector Current
1000
IC, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
100
100 ms
100
10 ms
10 s
Thermal
Limit
10
1
1
10
VCE, COLLECTOR REVERSE VOLTAGE (V)
Figure 9. Safe Operating Area
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4
100
2SC5658M3T5G, 2SC5658RM3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
E
1
2X
HE
2
2X
e
b
C
0.08 X Y
SIDE VIEW
TOP VIEW
3X
1
3X
DIM
A
b
b1
C
D
E
e
HE
L
L2
L
L2
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
RECOMMENDED
SOLDERING FOOTPRINT*
BOTTOM VIEW
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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PUBLICATION ORDERING INFORMATION
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Sales Representative
2SC5658M3/D
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