NGTB40N120L3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com Features • • • • • 40 A, 1200 V VCEsat = 1.55 V Eoff = 1.5 mJ Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for Low VCEsat These are Pb−Free Devices C Typical Applications • Motor Drive Inverter • Industrial Switching • Welding G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C A 160 40 ICM 160 A G C IF TO−247 CASE 340AL E A 160 40 MARKING DIAGRAM Diode pulsed current, Tpulse limited by TJmax IFM 160 A Gate−emitter voltage Transient gate−emitter voltage (tpulse = 5 ms, D < 0.10) VGE ±20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD 40N120L3 AYWWG W 454 227 Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB40N120L3WG © Semiconductor Components Industries, LLC, 2016 May, 2016 − Rev. 1 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB40N120L3W/D NGTB40N120L3WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.33 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.61 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCEsat − − 1.55 2.0 1.8 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − 0.5 0.4 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 200 nA Input capacitance Cies − 4912 − pF Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 140 − Cres − 80 − Qg − 220 − Qge − 42 − Qgc − 110 − td(on) − 18 − Gate−emitter threshold voltage Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 40 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time tr − 30 − td(off) − 150 − tf − 131 − Eon − 1.5 − Eoff − 1.5 − Total switching loss Ets − 3.0 − Turn−on delay time td(on) − 18 − tr − 31 − td(off) − 156 − tf − 220 − Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 15 V Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 175°C VCC = 600 V, IC = 40 A Rg = 10 W VGE = 15 V ns mJ ns mJ Eon − 2.0 − Turn−off switching loss Eoff − 2.3 − Total switching loss Ets − 4.3 − VF − − 3.0 2.8 3.4 − V trr − 86 − ns Qrr − 0.56 − mc Irrm − 12 − A dIrrm/dt − −210 − A/ms DIODE CHARACTERISTICS Forward voltage VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A TJ = 175°C Reverse recovery time Reverse recovery charge Reverse recovery current Diode peak rate of fall of reverse recovery current during tb TJ = 25°C IF = 40 A, VR = 600 V diF/dt = 500 A/ms www.onsemi.com 2 NGTB40N120L3WG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit trr − 136 − ns DIODE CHARACTERISTICS Reverse recovery time Reverse recovery charge Reverse recovery current Diode peak rate of fall of reverse recovery current during tb TJ = 125°C IF = 40 A, VR = 600 V diF/dt = 500 A/ms Qrr − 1.47 − mc Irrm − 20 − A dIrrm/dt − −212 − A/ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NGTB40N120L3WG TYPICAL CHARACTERISTICS 160 11 V 120 100 80 10 V 60 40 9V 20 7V 8V 0 160 1 2 3 5 4 6 7 120 11 V 100 10 V 80 60 9V 40 8V 7V 20 0 8 3 5 4 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics IC, COLLECTOR CURRENT (A) 11 V 120 100 80 10 V 60 40 9V 20 7−8 V 0 1 2 3 5 4 6 7 VGE = 20 to 13 V TJ = 175°C 140 120 11 V 100 10 V 80 60 9V 40 8V 20 7V 0 0 8 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Output Characteristics 160 140 120 100 80 60 40 TJ = 175°C 20 TJ = 25°C 0 2 4 6 8 8 160 VGE = 20 to 13 V 140 0 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = −55°C 0 1 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 140 0 0 IC, COLLECTOR CURRENT (A) VGE = 20 to 13 V TJ = 150°C 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 160 VGE = 20 to 13 V TJ = 25°C 10 12 14 2.8 2.6 IC = 75 A 2.4 2.2 2.0 IC = 40 A 1.8 1.6 IC = 20 A 1.4 1.2 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ www.onsemi.com 4 8 NGTB40N120L3WG TYPICAL CHARACTERISTICS 10,000 100 90 1000 IF, FORWARD CURRENT (A) CAPACITANCE (pF) Cies TJ = 25°C Coes 100 Cres 80 TJ = 175°C 70 TJ = 25°C 60 50 40 30 20 10 10 0 10 20 30 40 50 60 70 80 90 0 100 2.0 2.5 3.0 3.5 4.0 Figure 8. Diode Forward Characteristics 14 2.1 12 10 8 6 VCE = 600 V VGE = 15 V IC = 40 A 4 2 0 50 100 150 200 1.7 Eon 1.5 1.3 1.1 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 0.9 0.7 0 250 40 60 80 100 120 140 160 180 200 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature 6 SWITCHING LOSS (mJ) tf td(off) 100 tr td(on) 10 VCE = 600 V VGE = 15 V IC = 40 A Rg = 10 W 20 20 QG, GATE CHARGE (nC) 1000 40 4.5 Eoff 1.9 0.5 0.3 0 SWITCHING TIME (ns) 1.5 Figure 7. Typical Capacitance 2.3 0 1.0 VF, FORWARD VOLTAGE (V) 16 1 0.5 VCE, COLLECTOR−EMITTER VOLTAGE (V) SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 0 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 5 Eoff 4 Eon 3 2 1 0 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 5 80 90 NGTB40N120L3WG TYPICAL CHARACTERISTICS 1000 9 VCE = 600 V VGE = 15 V TJ = 175°C IC = 40 A 8 SWITCHING LOSS (mJ) SWITCHING TIME (ns) tf td(off) 100 tr td(on) 10 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 1 10 20 6 5 4 Eoff 3 2 0 30 40 50 60 70 80 90 0 20 10 30 40 50 70 60 IC, COLLECTOR CURRENT (A) Rg, GATE RESISTOR (W) Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG 3.5 td(off) SWITCHING LOSS (mJ) 3.0 tf td(on) tr 100 VCE = 600 V VGE = 15 V TJ = 175°C IC = 40 A 10 0 10 20 30 40 50 60 2.5 Eoff 2.0 1.5 Eon VGE = 15 V IC = 40 A Rg = 10 W TJ = 175°C 1.0 0.5 0 350 400 450 70 500 550 600 650 700 750 800 Rg, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE 1000 1000 VGE = 15 V IC = 40 A Rg = 10 W TJ = 175°C tf IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) Eon 1 1000 SWITCHING TIME (ns) 7 td(off) 100 tr td(on) 100 dc operation 10 50 ms 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 1 ms 0.1 10 350 400 450 500 550 600 650 700 750 1 800 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 6 10,000 NGTB40N120L3WG TYPICAL CHARACTERISTICS 350 trr, REVERSE RECOVERY TIME (ns) IC, COLLECTOR CURRENT (A) 1000 100 10 VGE = 15 V, TC = 175°C 1 TJ = 175°C, IF = 40 A 250 200 150 100 TJ = 25°C, IF = 40 A 50 0 1 10 100 1000 100 10,000 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt 3.5 3.0 TJ = 175°C, IF = 40 A 2.5 2.0 1.5 TJ = 25°C, IF = 40 A 1.0 0.5 VR = 400 V 0 100 300 500 700 900 1100 Irm, REVERSE RECOVERY CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 175°C, IF = 40 A 40 30 20 TJ = 25°C, IF = 40 A 10 VR = 400 V 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt 4.5 4.0 IF = 75 A 3.5 IF = 40 A 3.0 2.5 IF = 20 A 2.0 1.5 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 TJ, JUNCTION TEMPERATURE (°C) Figure 23. VF vs. TJ www.onsemi.com 7 1100 50 diF/dt, DIODE CURRENT SLOPE (A/ms) VF, FORWARD VOLTAGE (V) Qrr, REVERSE RECOVERY CHARGE (mC) VR = 400 V 300 1100 NGTB40N120L3WG TYPICAL CHARACTERISTICS 180 Ramp, TC = 110°C 160 140 Square, TC = 110°C Ipk (A) 120 100 Ramp, TC = 80°C Square, TC = 80°C 80 60 40 20 0 0.1 0.01 1 10 100 1000 FREQUENCY (kHz) Figure 24. Collector Current vs. Switching Frequency R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.33 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% Junction R1 R2 Rn Case Ci = ti/Ri C1 0.001 C2 Cn Ri (°C/W) Ci (J/W) 0.0065 0.0811 0.0186 0.1007 0.1115 0.0172 0.0154 0.0039 0.0539 0.0314 0.0897 1.8437 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 0.000001 0.00001 0.0001 0.001 0.01 1 0.1 ON−PULSE WIDTH (s) R(t), SQUARE−WAVE PEAK (°C/W) Figure 25. IGBT Transient Thermal Impedance 1 RqJC = 0.61 50% Duty Cycle 20% Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.1 10% Junction 5% R1 R2 Rn C1 C2 Cn Case Ci = ti/Ri 2% Single Pulse Ri (°C/W) Ci (J/W) 0.011089 0.015127 0.015703 0.048571 0.057211 0.031254 0.026926 0.077082 0.140155 0.181237 0.000090 0.000661 0.002014 0.002059 0.005527 0.031996 0.117443 0.129731 0.225628 0.551763 0.01 0.000001 0.00001 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 26. Diode Transient Thermal Impedance www.onsemi.com 8 0.1 1 NGTB40N120L3WG Figure 27. Test Circuit for Switching Characteristics Figure 28. Definition of Turn On Waveform www.onsemi.com 9 NGTB40N120L3WG Figure 29. Definition of Turn Off Waveform www.onsemi.com 10 NGTB40N120L3WG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE B B A NOTE 4 E SEATING PLANE 0.635 M P A Q E2 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 E2/2 NOTE 4 B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.80 21.34 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.81 4.32 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 11 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGTB40N120L3W/D