NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com 40 A, 650 V VCEsat = 1.8 V Eoff = 0.36 mJ Features • • • • • • Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Losses in IH Cooker Application TJmax = 175°C Soft, Fast Free Wheeling Diode This is a Pb−Free Device C G Typical Applications • Inductive Heating • Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 650 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax ICM Diode forward current @ TC = 25°C @ TC = 100°C IF Diode pulsed current, Tpulse limited by TJmax IFM 160 A Gate−emitter voltage Transient Gate Emitter Voltage (tp = 5 ms, D < 0.010) VGE $20 $30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C A 80 40 G 160 A C TO−247 CASE 340AL E A 80 40 MARKING DIAGRAM 40N65IHL2 AYWWG W 300 150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB40N65IHL2WG © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. 1 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB40N65IHL2W/D NGTB40N65IHL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.50 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.46 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 650 − − V VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 175°C VCEsat − − 1.8 2.3 2.2 − V VGE = VCE, IC = 150 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 650 V VGE = 0 V, VCE = 650 V, TJ = 175°C ICES − − − − 0.2 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 100 nA Cies − 3200 − pF Coes − 130 − Cres − 85 − Qg − 135 − Qge − 27 − Qgc − 67 − TJ = 25°C VCC = 400 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15 V td(off) − 140 − tf − 65 − Eoff − 0.36 − mJ TJ = 150°C VCC = 400 V, IC = 40 A Rg = 10 W VGE = 0 V/ 15 V td(off) − 150 − ns tf − 85 − Eoff − 0.60 − mJ VGE = 0 V, IF = 40 A VGE = 0 V, IF = 40 A, TJ = 175°C VF − − 1.2 1.16 1.4 − V trr − 465 − ns Qrr − 8700 − nc Irrm − 36 − A STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 40 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−off delay time Fall time Turn−off switching loss Turn−off delay time Fall time Turn−off switching loss ns DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current TJ = 25°C IF = 40 A, VR = 200 V diF/dt = 200 A/ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB40N65IHL2WG TYPICAL CHARACTERISTICS 160 TJ = 25°C 140 13 V VGE = 15 V to 20 V 120 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 160 11 V 100 80 10 V 60 40 9V 20 8V 7V 6 0 0 1 2 3 4 5 7 100 80 11 V 60 10 V 40 9V 8V 20 7V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 160 140 120 IC, COLLECTOR CURRENT (A) TJ = −55°C VGE = 13 V to 20 V 11 V 100 80 10 V 60 40 9V 20 8V 0 1 2 3 4 5 6 7 140 TJ = 25°C 120 100 80 TJ = 150°C 60 40 20 0 8 0 2 4 6 10 8 12 14 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.0 10,000 IC = 40 A 2.5 IC = 50 A 2.0 1.5 IC = 20 A IC = 30 A 1.0 0.5 −75 −50 −25 0 25 50 TJ = 25°C Cies CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) 13 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 160 0 VGE = 15 V to 20 V 120 0 8 TJ = 150°C 140 75 100 125 150 175 200 1000 100 Coes Cres 10 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 100 NGTB40N65IHL2WG TYPICAL CHARACTERISTICS 20 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 120 100 TJ = 25°C 80 TJ = 150°C 60 40 20 0 0 0.5 1.0 2.0 1.5 12 10 8 6 VCE = 480 V VGE = 15 V IC = 40 A 4 2 0 0 20 40 60 80 100 120 Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge 140 160 1000 SWITCHING TIME (ns) 0.8 0.6 Eoff 0.4 0.2 0 1.6 1.4 1.2 20 40 60 80 VCE = 400 V VGE = 15 V IC = 40 A Rg = 10 W 20 40 60 80 100 120 140 Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature Eoff 14 24 160 1000 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 0.6 0 4 tf TJ, JUNCTION TEMPERATURE (°C) 0.8 0.2 100 TJ, JUNCTION TEMPERATURE (°C) 1.0 0.4 td(off) 10 0 100 120 140 160 180 200 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 14 QG, GATE CHARGE (nC) VCE = 400 V VGE = 15 V IC = 40 A Rg = 10 W 1 SWITCHING LOSS (mJ) 16 VF, FORWARD VOLTAGE (V) 1.2 0 18 34 44 54 64 74 td(off) 100 10 4 84 tf VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 14 24 34 44 54 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 64 74 NGTB40N65IHL2WG TYPICAL CHARACTERISTICS 1000 VCE = 400 V VGE = 15 V IC = 40 A TJ = 150°C 1 Eoff SWITCHING TIME (ns) SWITCHING LOSS (mJ) 1.5 0.5 0 5 15 25 35 45 55 65 75 5 15 25 35 45 55 Figure 14. Switching Time vs. Rg Eoff 0.4 0.3 0.2 td(off) 100 tf VGE = 15 V IC = 40 A Rg = 10 W TJ = 150°C 0.1 275 325 375 425 475 525 10 175 575 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 575 1000 100 ms 100 1 ms IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 225 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1000 50 ms dc operation 10 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 85 1000 0.5 225 75 Figure 13. Switching Loss vs. Rg 0.6 0 175 65 Rg, GATE RESISTOR (W) SWITCHING TIME (ns) SWITCHING LOSS (mJ) 0.7 VCE = 400 V VGE = 15 V IC = 40 A TJ = 150°C Rg, GATE RESISTOR (W) VGE = 15 V IC = 40 A Rg = 10 W TJ = 150°C 0.8 tf 100 10 85 1 0.9 td(off) 1 10 100 1000 100 10 1 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB40N65IHL2WG TYPICAL CHARACTERISTICS 1 50% Duty Cycle R(t) (°C/W) 0.1 0.01 RqJC = 0.50 20% 10% 5% Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 2% Junction R1 0.001 Single Pulse 0.0001 0.000001 Rn Case Ci = ti/Ri C1 0.00001 R2 0.0001 0.001 C2 Cn 0.01 0.1 Ri (°C/W) ti (sec) 0.064185 0.060802 0.050673 0.170671 0.142159 0.009510 0.00004 0.001558 0.005201 0.019734 0.018529 0.070344 3.325233 26863.47 1 10 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance 10 R(t) (°C/W) RqJC = 1.46 1 50% Duty Cycle 20% 0.1 Junction R1 10% 5% 2% Rn C2 Cn Ci = ti/Ri C1 Single Pulse 0.01 0.000001 R2 0.00001 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.01 0.01 PULSE TIME (sec) Figure 20. Diode Transient Thermal Impedance Figure 21. Test Circuit for Switching Characteristics www.onsemi.com 6 Case Ri (°C/W) ti (sec) 0.026867 0.000237 0.034915 0.039625 0.087617 0.161215 0.336873 0.265205 0.361515 0.148056 0.000037 0.013344 0.000286 0.000798 0.001141 0.001962 0.002968 0.011924 0.027661 0.213586 0.1 1 NGTB40N65IHL2WG Figure 22. Definition of Turn On Waveform www.onsemi.com 7 NGTB40N65IHL2WG Figure 23. Definition of Turn Off Waveform www.onsemi.com 8 NGTB40N65IHL2WG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A E E2/2 B A NOTE 4 SEATING PLANE Q E2 NOTE 4 D 0.635 2 S 4 2X NOTE 5 b2 c b4 3X e b 0.25 A1 NOTE 7 M B A M DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 L B A NOTE 6 NOTE 3 1 M P A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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